CN102365730A - 对源极/漏极延伸区、晕环袋和栅极电介质厚度具有不同组态的类极性场效应晶体管的结构和制造 - Google Patents

对源极/漏极延伸区、晕环袋和栅极电介质厚度具有不同组态的类极性场效应晶体管的结构和制造 Download PDF

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CN102365730A
CN102365730A CN2010800138539A CN201080013853A CN102365730A CN 102365730 A CN102365730 A CN 102365730A CN 2010800138539 A CN2010800138539 A CN 2010800138539A CN 201080013853 A CN201080013853 A CN 201080013853A CN 102365730 A CN102365730 A CN 102365730A
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zone
extension
dopant
fet
type
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康斯坦丁·布卢恰
威廉·D·弗伦奇
唐纳德·M·阿谢尔
杰恩-均·杨
桑迪普·R·巴尔
D·考特尼·帕克
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National Semiconductor Corp
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National Semiconductor Corp
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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
CN2010800138539A 2009-03-27 2010-03-25 对源极/漏极延伸区、晕环袋和栅极电介质厚度具有不同组态的类极性场效应晶体管的结构和制造 Pending CN102365730A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/382,971 2009-03-27
US12/382,971 US8084827B2 (en) 2009-03-27 2009-03-27 Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses
PCT/US2010/000898 WO2010110902A1 (en) 2009-03-27 2010-03-25 Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses

Publications (1)

Publication Number Publication Date
CN102365730A true CN102365730A (zh) 2012-02-29

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CN2010800138539A Pending CN102365730A (zh) 2009-03-27 2010-03-25 对源极/漏极延伸区、晕环袋和栅极电介质厚度具有不同组态的类极性场效应晶体管的结构和制造

Country Status (7)

Country Link
US (2) US8084827B2 (https=)
EP (1) EP2412016A4 (https=)
JP (1) JP2012522369A (https=)
KR (1) KR20110133622A (https=)
CN (1) CN102365730A (https=)
TW (1) TW201101463A (https=)
WO (1) WO2010110902A1 (https=)

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CN112309982A (zh) * 2019-07-31 2021-02-02 意法半导体(鲁塞)公司 包括限定mosfet晶体管的有效沟道长度的操作的制造方法

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CN109980010B (zh) * 2017-12-28 2020-10-13 无锡华润上华科技有限公司 一种半导体器件的制造方法和集成半导体器件
US11455452B2 (en) * 2019-09-23 2022-09-27 Texas Instruments Incorporated Variable implant and wafer-level feed-forward for dopant dose optimization
CN111785777B (zh) * 2020-06-28 2023-10-20 上海华虹宏力半导体制造有限公司 高压cmos器件及其制造方法
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