KR20110133622A - 소스/드레인 확장부들, 할로 포켓들, 및 게이트 유전체 두께의 상이한 구성들을 갖는 유사-극성 전계-효과 트랜지스터들의 구조 및 제조 - Google Patents

소스/드레인 확장부들, 할로 포켓들, 및 게이트 유전체 두께의 상이한 구성들을 갖는 유사-극성 전계-효과 트랜지스터들의 구조 및 제조 Download PDF

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KR20110133622A
KR20110133622A KR1020117025429A KR20117025429A KR20110133622A KR 20110133622 A KR20110133622 A KR 20110133622A KR 1020117025429 A KR1020117025429 A KR 1020117025429A KR 20117025429 A KR20117025429 A KR 20117025429A KR 20110133622 A KR20110133622 A KR 20110133622A
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fet
dopant
extension
type
zone
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콘스탄틴 브루케아
윌리엄 디 프렌치
도날드 엠 아처
정-쥔 양 (사망)
산딥 알 바흘
디 코트니 파커
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내셔널 세미콘덕터 코포레이션
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    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
KR1020117025429A 2009-03-27 2010-03-25 소스/드레인 확장부들, 할로 포켓들, 및 게이트 유전체 두께의 상이한 구성들을 갖는 유사-극성 전계-효과 트랜지스터들의 구조 및 제조 Withdrawn KR20110133622A (ko)

Applications Claiming Priority (2)

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US12/382,971 2009-03-27
US12/382,971 US8084827B2 (en) 2009-03-27 2009-03-27 Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses

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KR20110133622A true KR20110133622A (ko) 2011-12-13

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KR1020117025429A Withdrawn KR20110133622A (ko) 2009-03-27 2010-03-25 소스/드레인 확장부들, 할로 포켓들, 및 게이트 유전체 두께의 상이한 구성들을 갖는 유사-극성 전계-효과 트랜지스터들의 구조 및 제조

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US (2) US8084827B2 (https=)
EP (1) EP2412016A4 (https=)
JP (1) JP2012522369A (https=)
KR (1) KR20110133622A (https=)
CN (1) CN102365730A (https=)
TW (1) TW201101463A (https=)
WO (1) WO2010110902A1 (https=)

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KR20200095541A (ko) * 2017-12-28 2020-08-10 씨에스엠씨 테크놀로지스 에프에이비2 코., 엘티디. 반도체 디바이스의 제조 방법 및 집적 반도체 디바이스
KR20200095539A (ko) * 2017-12-28 2020-08-10 씨에스엠씨 테크놀로지스 에프에이비2 코., 엘티디. 반도체 디바이스의 제조 방법 및 집적 반도체 디바이스
WO2026064765A1 (en) * 2024-09-23 2026-03-26 Apple Inc. Low noise stacked field effect transistor design

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JP6043193B2 (ja) * 2013-01-28 2016-12-14 株式会社東芝 トンネルトランジスタ
US9324783B2 (en) * 2014-09-30 2016-04-26 Infineon Technologies Ag Soft switching semiconductor device and method for producing thereof
FR3099638A1 (fr) * 2019-07-31 2021-02-05 Stmicroelectronics (Rousset) Sas Procédé de fabrication comprenant une définition d’une longueur effective de canal de transistors MOSFET
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US8084827B2 (en) 2011-12-27
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US8377768B2 (en) 2013-02-19
TW201101463A (en) 2011-01-01
US20100244149A1 (en) 2010-09-30
JP2012522369A (ja) 2012-09-20
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US20120264263A1 (en) 2012-10-18
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