CN102365714A - 用于具有缩小的栅极电极间距的非对称晶体管的梯度阱注入 - Google Patents

用于具有缩小的栅极电极间距的非对称晶体管的梯度阱注入 Download PDF

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Publication number
CN102365714A
CN102365714A CN2010800141885A CN201080014188A CN102365714A CN 102365714 A CN102365714 A CN 102365714A CN 2010800141885 A CN2010800141885 A CN 2010800141885A CN 201080014188 A CN201080014188 A CN 201080014188A CN 102365714 A CN102365714 A CN 102365714A
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China
Prior art keywords
transistor
interior zone
ion barrier
mask
injecting mask
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Pending
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CN2010800141885A
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English (en)
Chinese (zh)
Inventor
R·马尔芬格
A·韦
J·亨齐尔
V·帕帕耶奥尔尤
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Priority claimed from PCT/EP2010/000491 external-priority patent/WO2010086153A1/en
Publication of CN102365714A publication Critical patent/CN102365714A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823493—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN2010800141885A 2009-01-30 2010-01-27 用于具有缩小的栅极电极间距的非对称晶体管的梯度阱注入 Pending CN102365714A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102009006885A DE102009006885B4 (de) 2009-01-30 2009-01-30 Verfahren zum Erzeugen einer abgestuften Wannenimplantation für asymmetrische Transistoren mit kleinen Gateelektrodenabständen und Halbleiterbauelemente
DE102009006885.6 2009-01-30
US12/692,886 US9449826B2 (en) 2009-01-30 2010-01-25 Graded well implantation for asymmetric transistors having reduced gate electrode pitches
US12/692,886 2010-01-25
PCT/EP2010/000491 WO2010086153A1 (en) 2009-01-30 2010-01-27 Graded well implantation for asymmetric transistors having reduced gate electrode pitches

Publications (1)

Publication Number Publication Date
CN102365714A true CN102365714A (zh) 2012-02-29

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CN2010800141885A Pending CN102365714A (zh) 2009-01-30 2010-01-27 用于具有缩小的栅极电极间距的非对称晶体管的梯度阱注入

Country Status (5)

Country Link
US (1) US9449826B2 (ja)
JP (1) JP2012516556A (ja)
KR (1) KR20110119768A (ja)
CN (1) CN102365714A (ja)
DE (1) DE102009006885B4 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106409910A (zh) * 2015-08-03 2017-02-15 英飞凌科技德累斯顿有限公司 具有横向变化掺杂分布图的半导体器件及其制造方法
CN106935502A (zh) * 2015-12-29 2017-07-07 中芯国际集成电路制造(上海)有限公司 半导体结构及其制造方法
CN106992117A (zh) * 2017-03-30 2017-07-28 北京燕东微电子有限公司 一种SiC结势垒肖特基二极管的制作方法
CN111969061A (zh) * 2020-08-12 2020-11-20 无锡先仁智芯微电子技术有限公司 一种ldmos结构及其制作方法
CN112951917A (zh) * 2021-01-29 2021-06-11 中国电子科技集团公司第十三研究所 一种氧化镓场效应晶体管及制备方法

Families Citing this family (7)

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US8664027B2 (en) * 2011-02-11 2014-03-04 Varian Semiconductor Associates, Inc. LED mesa sidewall isolation by ion implantation
FR2977071A1 (fr) * 2011-06-27 2012-12-28 St Microelectronics Crolles 2 Procede de dopage controle d'un substrat semi-conducteur
CN102903649A (zh) * 2011-07-28 2013-01-30 中芯国际集成电路制造(上海)有限公司 一种选择离子注入的光刻胶厚度方法
US8481381B2 (en) 2011-09-14 2013-07-09 Globalfoundries Inc. Superior integrity of high-k metal gate stacks by preserving a resist material above end caps of gate electrode structures
CN104779138A (zh) * 2014-01-14 2015-07-15 北大方正集团有限公司 一种横向变掺杂区的制作方法以及晶体管
JP7024626B2 (ja) * 2018-06-27 2022-02-24 三菱電機株式会社 半導体装置、半導体装置の製造方法
US11862691B2 (en) 2019-11-01 2024-01-02 Raytheon Company Field effect transistor having field plate

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US5111240A (en) * 1988-04-21 1992-05-05 International Business Machines Corporation Method for forming a photoresist pattern and apparatus applicable therewith
US5798552A (en) * 1996-03-29 1998-08-25 Intel Corporation Transistor suitable for high voltage circuit
US20060040450A1 (en) * 2004-08-20 2006-02-23 Sharp Laboratories Of America, Inc. Source/drain structure for high performance sub 0.1 micron transistors

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US5111240A (en) * 1988-04-21 1992-05-05 International Business Machines Corporation Method for forming a photoresist pattern and apparatus applicable therewith
US5798552A (en) * 1996-03-29 1998-08-25 Intel Corporation Transistor suitable for high voltage circuit
US20060040450A1 (en) * 2004-08-20 2006-02-23 Sharp Laboratories Of America, Inc. Source/drain structure for high performance sub 0.1 micron transistors

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106409910A (zh) * 2015-08-03 2017-02-15 英飞凌科技德累斯顿有限公司 具有横向变化掺杂分布图的半导体器件及其制造方法
CN106935502A (zh) * 2015-12-29 2017-07-07 中芯国际集成电路制造(上海)有限公司 半导体结构及其制造方法
CN106992117A (zh) * 2017-03-30 2017-07-28 北京燕东微电子有限公司 一种SiC结势垒肖特基二极管的制作方法
CN111969061A (zh) * 2020-08-12 2020-11-20 无锡先仁智芯微电子技术有限公司 一种ldmos结构及其制作方法
CN111969061B (zh) * 2020-08-12 2024-06-04 无锡先仁智芯微电子技术有限公司 一种ldmos结构及其制作方法
CN112951917A (zh) * 2021-01-29 2021-06-11 中国电子科技集团公司第十三研究所 一种氧化镓场效应晶体管及制备方法
CN112951917B (zh) * 2021-01-29 2022-11-15 中国电子科技集团公司第十三研究所 一种氧化镓场效应晶体管及制备方法

Also Published As

Publication number Publication date
DE102009006885A1 (de) 2010-08-12
KR20110119768A (ko) 2011-11-02
US20100193866A1 (en) 2010-08-05
US9449826B2 (en) 2016-09-20
DE102009006885B4 (de) 2011-09-22
JP2012516556A (ja) 2012-07-19

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Application publication date: 20120229