CN102364690B - 一种隧穿场效应晶体管及其制备方法 - Google Patents
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CN102664165B (zh) * | 2012-05-18 | 2014-06-04 | 北京大学 | 基于标准cmos ic工艺制备互补隧穿场效应晶体管的方法 |
CN103594376B (zh) * | 2013-11-08 | 2016-02-17 | 北京大学 | 一种结调制型隧穿场效应晶体管及其制备方法 |
CN105390538A (zh) * | 2015-12-04 | 2016-03-09 | 哈尔滨工业大学深圳研究生院 | 一种隧穿场效应晶体管数字标准单元的版图结构设计方法 |
WO2018195830A1 (zh) * | 2017-04-26 | 2018-11-01 | 华为技术有限公司 | 场效应器件及其制造方法、芯片 |
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CN101777499A (zh) * | 2010-01-22 | 2010-07-14 | 北京大学 | 一种基于平面工艺自对准制备隧穿场效应晶体管的方法 |
CN102005481A (zh) * | 2010-11-03 | 2011-04-06 | 北京大学 | 一种t型栅结构的低功耗隧穿场效应晶体管 |
CN102194884A (zh) * | 2011-04-26 | 2011-09-21 | 北京大学 | 一种混合导通机制的场效应晶体管 |
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US8441000B2 (en) * | 2006-02-01 | 2013-05-14 | International Business Machines Corporation | Heterojunction tunneling field effect transistors, and methods for fabricating the same |
US8405121B2 (en) * | 2009-02-12 | 2013-03-26 | Infineon Technologies Ag | Semiconductor devices |
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CN101777499A (zh) * | 2010-01-22 | 2010-07-14 | 北京大学 | 一种基于平面工艺自对准制备隧穿场效应晶体管的方法 |
CN102005481A (zh) * | 2010-11-03 | 2011-04-06 | 北京大学 | 一种t型栅结构的低功耗隧穿场效应晶体管 |
CN102194884A (zh) * | 2011-04-26 | 2011-09-21 | 北京大学 | 一种混合导通机制的场效应晶体管 |
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