CN102005481A - 一种t型栅结构的低功耗隧穿场效应晶体管 - Google Patents
一种t型栅结构的低功耗隧穿场效应晶体管 Download PDFInfo
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102364690A (zh) * | 2011-11-02 | 2012-02-29 | 北京大学 | 一种隧穿场效应晶体管及其制备方法 |
CN102945861A (zh) * | 2012-11-26 | 2013-02-27 | 北京大学 | 条形栅调制型隧穿场效应晶体管及其制备方法 |
WO2014082451A1 (zh) * | 2012-11-29 | 2014-06-05 | 北京大学 | 带双扩散的条形栅隧穿场效应晶体管及其制备方法 |
WO2015070555A1 (zh) * | 2013-11-18 | 2015-05-21 | 北京大学 | 一种三面源隧穿场效应晶体管及其制备方法 |
CN109872989A (zh) * | 2017-12-01 | 2019-06-11 | 南亚科技股份有限公司 | 晶体管元件和半导体布局结构 |
Citations (4)
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US7135742B1 (en) * | 2000-02-08 | 2006-11-14 | Fujitsu Limited | Insulated gate type semiconductor device and method for fabricating same |
US20060292802A1 (en) * | 2005-06-24 | 2006-12-28 | Lee Woon K | Semiconductor Device and Method for Forming the Same |
US20090200605A1 (en) * | 2008-02-07 | 2009-08-13 | Bjoerk Mikael T | Metal-Oxide-Semiconductor Device Including an Energy Filter |
CN101651141A (zh) * | 2008-08-11 | 2010-02-17 | 恩益禧电子股份有限公司 | 半导体器件和制造半导体器件的方法 |
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2010
- 2010-11-03 CN CN201010530475A patent/CN102005481B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US7135742B1 (en) * | 2000-02-08 | 2006-11-14 | Fujitsu Limited | Insulated gate type semiconductor device and method for fabricating same |
US20060292802A1 (en) * | 2005-06-24 | 2006-12-28 | Lee Woon K | Semiconductor Device and Method for Forming the Same |
US20090200605A1 (en) * | 2008-02-07 | 2009-08-13 | Bjoerk Mikael T | Metal-Oxide-Semiconductor Device Including an Energy Filter |
CN101651141A (zh) * | 2008-08-11 | 2010-02-17 | 恩益禧电子股份有限公司 | 半导体器件和制造半导体器件的方法 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102364690B (zh) * | 2011-11-02 | 2013-11-06 | 北京大学 | 一种隧穿场效应晶体管及其制备方法 |
CN102364690A (zh) * | 2011-11-02 | 2012-02-29 | 北京大学 | 一种隧穿场效应晶体管及其制备方法 |
CN102945861B (zh) * | 2012-11-26 | 2015-12-23 | 北京大学 | 条形栅调制型隧穿场效应晶体管及其制备方法 |
CN102945861A (zh) * | 2012-11-26 | 2013-02-27 | 北京大学 | 条形栅调制型隧穿场效应晶体管及其制备方法 |
WO2014079218A1 (zh) * | 2012-11-26 | 2014-05-30 | 北京大学 | 条形栅调制型隧穿场效应晶体管及其制备方法 |
US8981421B2 (en) | 2012-11-26 | 2015-03-17 | Peking University | Strip-shaped gate-modulated tunneling field effect transistor and a preparation method thereof |
WO2014082451A1 (zh) * | 2012-11-29 | 2014-06-05 | 北京大学 | 带双扩散的条形栅隧穿场效应晶体管及其制备方法 |
US9054075B2 (en) | 2012-11-29 | 2015-06-09 | Peking University | Strip-shaped gate tunneling field effect transistor with double-diffusion and a preparation method thereof |
WO2015070555A1 (zh) * | 2013-11-18 | 2015-05-21 | 北京大学 | 一种三面源隧穿场效应晶体管及其制备方法 |
US9490363B2 (en) | 2013-11-18 | 2016-11-08 | Peking University | Tunneling field effect transistor having a three-side source and fabrication method thereof |
CN109872989A (zh) * | 2017-12-01 | 2019-06-11 | 南亚科技股份有限公司 | 晶体管元件和半导体布局结构 |
US10825898B2 (en) | 2017-12-01 | 2020-11-03 | Nanya Technology Corporation | Semiconductor layout structure including asymmetrical channel region |
CN109872989B (zh) * | 2017-12-01 | 2021-07-30 | 南亚科技股份有限公司 | 晶体管元件和半导体布局结构 |
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CN102005481B (zh) | 2011-12-28 |
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