CN102117833B - 一种梳状栅复合源mos晶体管及其制作方法 - Google Patents
一种梳状栅复合源mos晶体管及其制作方法 Download PDFInfo
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- CN102117833B CN102117833B CN201110021444XA CN201110021444A CN102117833B CN 102117833 B CN102117833 B CN 102117833B CN 201110021444X A CN201110021444X A CN 201110021444XA CN 201110021444 A CN201110021444 A CN 201110021444A CN 102117833 B CN102117833 B CN 102117833B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000002131 composite material Substances 0.000 title abstract 4
- 229910044991 metal oxide Inorganic materials 0.000 title abstract 2
- 150000004706 metal oxides Chemical class 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 25
- 229910021332 silicide Inorganic materials 0.000 claims description 13
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 11
- 239000002019 doping agent Substances 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- -1 hafnium nitride Chemical class 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 230000000802 nitrating effect Effects 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 238000005204 segregation Methods 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 abstract description 7
- 230000005669 field effect Effects 0.000 abstract description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- 230000001965 increasing effect Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110021444XA CN102117833B (zh) | 2011-01-19 | 2011-01-19 | 一种梳状栅复合源mos晶体管及其制作方法 |
DE112011100710.8T DE112011100710B4 (de) | 2011-01-19 | 2011-04-01 | MOS-Transistor mit kombinierter Source mit kammförmigem Gate und Verfahren zu seiner Herstellung |
PCT/CN2011/072372 WO2012097543A1 (zh) | 2011-01-19 | 2011-04-01 | 一种梳状栅复合源mos晶体管及其制作方法 |
US13/318,333 US8507959B2 (en) | 2011-01-19 | 2011-04-01 | Combined-source MOS transistor with comb-shaped gate, and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110021444XA CN102117833B (zh) | 2011-01-19 | 2011-01-19 | 一种梳状栅复合源mos晶体管及其制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN102117833A CN102117833A (zh) | 2011-07-06 |
CN102117833B true CN102117833B (zh) | 2012-07-25 |
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CN201110021444XA Active CN102117833B (zh) | 2011-01-19 | 2011-01-19 | 一种梳状栅复合源mos晶体管及其制作方法 |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN102117833B (zh) |
DE (1) | DE112011100710B4 (zh) |
WO (1) | WO2012097543A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102157559B (zh) * | 2011-03-01 | 2012-05-02 | 北京大学 | 一种叉指型栅结构的低功耗隧穿场效应晶体管 |
US9082751B2 (en) * | 2011-09-14 | 2015-07-14 | Broadcom Corporation | Half-FinFET semiconductor device and related method |
CN104157687B (zh) * | 2014-08-11 | 2017-06-27 | 北京大学 | 一种垂直环栅隧穿晶体管及其制备方法 |
CN111048588B (zh) * | 2019-11-29 | 2021-08-03 | 中国科学院微电子研究所 | 半导体器件及其制造方法及包括该半导体器件的电子设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4939557A (en) * | 1989-02-15 | 1990-07-03 | Varian Associates, Inc. | (110) GaAs microwave FET |
CN1555579A (zh) * | 2001-08-10 | 2004-12-15 | ˹ƽ�ڿ˰뵼��ɷ�����˾ | 具有高介电常数栅极绝缘层和与衬底形成肖特基接触的源极和漏极的晶体管 |
CN1794469A (zh) * | 2005-12-08 | 2006-06-28 | 北京大学 | 一种肖特基势垒mos晶体管及其制作方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06196509A (ja) * | 1992-12-25 | 1994-07-15 | Sanyo Electric Co Ltd | 電界効果トランジスタ |
JP2006269586A (ja) * | 2005-03-23 | 2006-10-05 | Toshiba Corp | 半導体素子 |
JP2010045130A (ja) * | 2008-08-11 | 2010-02-25 | Nec Electronics Corp | 半導体装置および半導体装置の製造方法 |
CN101719517B (zh) | 2009-11-19 | 2011-12-14 | 复旦大学 | 一种肖特基隧穿晶体管的制备方法 |
CN101771079A (zh) * | 2009-12-30 | 2010-07-07 | 复旦大学 | 一种源极为肖特基结的隧穿晶体管结构及其制造方法 |
-
2011
- 2011-01-19 CN CN201110021444XA patent/CN102117833B/zh active Active
- 2011-04-01 WO PCT/CN2011/072372 patent/WO2012097543A1/zh active Application Filing
- 2011-04-01 DE DE112011100710.8T patent/DE112011100710B4/de not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4939557A (en) * | 1989-02-15 | 1990-07-03 | Varian Associates, Inc. | (110) GaAs microwave FET |
CN1555579A (zh) * | 2001-08-10 | 2004-12-15 | ˹ƽ�ڿ˰뵼��ɷ�����˾ | 具有高介电常数栅极绝缘层和与衬底形成肖特基接触的源极和漏极的晶体管 |
CN1794469A (zh) * | 2005-12-08 | 2006-06-28 | 北京大学 | 一种肖特基势垒mos晶体管及其制作方法 |
Non-Patent Citations (2)
Title |
---|
JP特开2006-269586A 2006.10.05 |
JP特开平6-196509A 1994.07.15 |
Also Published As
Publication number | Publication date |
---|---|
DE112011100710B4 (de) | 2016-04-07 |
WO2012097543A1 (zh) | 2012-07-26 |
CN102117833A (zh) | 2011-07-06 |
DE112011100710T5 (de) | 2013-04-11 |
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C53 | Correction of patent for invention or patent application | ||
CB03 | Change of inventor or designer information |
Inventor after: Huang Ru Inventor after: Huang Qianqian Inventor after: Zhan Zhan Inventor after: Wang Yangyuan Inventor before: Huang Qianqian Inventor before: Zhan Zhan Inventor before: Huang Ru Inventor before: Wang Yangyuan |
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Free format text: CORRECT: INVENTOR; FROM: HUANG QIANQIAN ZHAN ZHAN HUANG RU WANG YANGYUAN TO: HUANG RU HUANG QIANQIAN ZHAN ZHAN WANG YANGYUAN |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: BEIJING UNIV. Effective date: 20130528 Owner name: BEIJING UNIV. Effective date: 20130528 |
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Effective date of registration: 20130528 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Peking University Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |