CN102117834B - 一种带杂质分凝的复合源mos晶体管及其制备方法 - Google Patents
一种带杂质分凝的复合源mos晶体管及其制备方法 Download PDFInfo
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CN102117834B true CN102117834B (zh) | 2012-12-19 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102881724B (zh) * | 2011-07-15 | 2016-08-17 | 中国科学院微电子研究所 | 多栅晶体管及其制造方法 |
CN103500758A (zh) * | 2013-10-12 | 2014-01-08 | 沈阳工业大学 | 半栅极控制源极肖特基势垒型隧穿场效应晶体管 |
CN104157687B (zh) * | 2014-08-11 | 2017-06-27 | 北京大学 | 一种垂直环栅隧穿晶体管及其制备方法 |
CN109427678B (zh) | 2017-08-24 | 2021-06-08 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US5920093A (en) * | 1997-04-07 | 1999-07-06 | Motorola, Inc. | SOI FET having gate sub-regions conforming to t-shape |
CN1450655A (zh) * | 2002-04-08 | 2003-10-22 | 台湾积体电路制造股份有限公司 | Soi金氧半场效电晶体 |
CN101719517A (zh) * | 2009-11-19 | 2010-06-02 | 复旦大学 | 一种肖特基隧穿晶体管结构及其制备方法 |
Family Cites Families (1)
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US6905919B2 (en) * | 2003-07-29 | 2005-06-14 | Chartered Semiconductor Manufacturing Ltd. | Method of forming a partially depleted silicon on insulator (PDSOI) transistor with a pad lock body extension |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US5920093A (en) * | 1997-04-07 | 1999-07-06 | Motorola, Inc. | SOI FET having gate sub-regions conforming to t-shape |
CN1450655A (zh) * | 2002-04-08 | 2003-10-22 | 台湾积体电路制造股份有限公司 | Soi金氧半场效电晶体 |
CN101719517A (zh) * | 2009-11-19 | 2010-06-02 | 复旦大学 | 一种肖特基隧穿晶体管结构及其制备方法 |
Non-Patent Citations (1)
Title |
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A. Kinoshita et al.《Solution for High-Performance Schottky-Source/Drain MOSFETs:Schottky Barrier Height Engineering with Dopant Segregation Technique 》.《2004 Symposium on VLSl Technology Digest of Technical Papers》.2004, * |
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