CN109478562A - 隧穿场效应晶体管及其制造方法 - Google Patents

隧穿场效应晶体管及其制造方法 Download PDF

Info

Publication number
CN109478562A
CN109478562A CN201680087741.5A CN201680087741A CN109478562A CN 109478562 A CN109478562 A CN 109478562A CN 201680087741 A CN201680087741 A CN 201680087741A CN 109478562 A CN109478562 A CN 109478562A
Authority
CN
China
Prior art keywords
region
ion
sacrificial gate
layer
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201680087741.5A
Other languages
English (en)
Other versions
CN109478562B (zh
Inventor
杨喜超
张臣雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of CN109478562A publication Critical patent/CN109478562A/zh
Application granted granted Critical
Publication of CN109478562B publication Critical patent/CN109478562B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

本发明提供一种隧穿场效应晶体管及其制造方法，该制造方法包括：在半导体衬底上通过STI工艺定义有源区域，并在有源区域中间表面制作牺牲栅，在一侧进行离子注入形成线遂穿结的离子掺杂部分，然后再制作牺牲栅隔离墙以保护上述离子掺杂部分，然后制作其他的隔离墙以及再次进行离子注入形成源区和漏区，漏区的离子浓度低于或者等于离子掺杂部分的离子浓度，再移除牺牲栅，然后依次沉积栅介质层、功函数层和栅导电层，制作源电极和漏电极形成隧穿场效应晶体管，通过该种方式可以精确定义线遂穿结的面积，能够保证晶圆上器件性能一致，有效提高工艺稳定性。

Description

PCT国内申请，说明书已公开。

Claims (13)

  1. PCT国内申请，权利要求书已公开。
CN201680087741.5A 2016-11-17 2016-11-17 隧穿场效应晶体管及其制造方法 Active CN109478562B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2016/106291 WO2018090301A1 (zh) 2016-11-17 2016-11-17 隧穿场效应晶体管及其制造方法

Publications (2)

Publication Number Publication Date
CN109478562A true CN109478562A (zh) 2019-03-15
CN109478562B CN109478562B (zh) 2022-04-22

Family

ID=62145931

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680087741.5A Active CN109478562B (zh) 2016-11-17 2016-11-17 隧穿场效应晶体管及其制造方法

Country Status (2)

Country Link
CN (1) CN109478562B (zh)
WO (1) WO2018090301A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110690214A (zh) * 2019-11-11 2020-01-14 湖南静芯微电子技术有限公司 一种多叉指ldmos-scr静电防护器件

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112466951B (zh) * 2020-11-27 2022-10-21 中国科学院微电子研究所 一种mos器件及避免mos器件寄生晶体管开启的方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7777282B2 (en) * 2008-08-13 2010-08-17 Intel Corporation Self-aligned tunneling pocket in field-effect transistors and processes to form same
CN102194860A (zh) * 2010-03-05 2011-09-21 中芯国际集成电路制造(上海)有限公司 绿色晶体管
CN102237269A (zh) * 2010-04-21 2011-11-09 中国科学院微电子研究所 以氮化铝为势垒层的Mo基金属栅叠层结构的刻蚀方法
CN102983168A (zh) * 2012-11-29 2013-03-20 北京大学 带双扩散的条形栅隧穿场效应晶体管及其制备方法
US20130221407A1 (en) * 2012-02-29 2013-08-29 Hsin-Ming Hou Multi-gate transistor device
CN104347692A (zh) * 2014-09-04 2015-02-11 北京大学 抑制输出非线性开启的隧穿场效应晶体管及其制备方法
CN104576719A (zh) * 2014-12-03 2015-04-29 华为技术有限公司 隧穿场效应晶体管及其制备方法
CN104617137A (zh) * 2015-01-19 2015-05-13 华为技术有限公司 一种场效应器件及其制备方法
CN104900519A (zh) * 2014-03-04 2015-09-09 中芯国际集成电路制造(上海)有限公司 晶体管的形成方法
US9397199B1 (en) * 2016-01-11 2016-07-19 GlobalFoundries, Inc. Methods of forming multi-Vt III-V TFET devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5383732B2 (ja) * 2011-03-09 2014-01-08 株式会社東芝 半導体装置
WO2015001399A1 (en) * 2013-07-03 2015-01-08 University Of Calcutta Tunnel field-effect transistor (tfet) with supersteep sub-threshold swing

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7777282B2 (en) * 2008-08-13 2010-08-17 Intel Corporation Self-aligned tunneling pocket in field-effect transistors and processes to form same
CN102194860A (zh) * 2010-03-05 2011-09-21 中芯国际集成电路制造(上海)有限公司 绿色晶体管
CN102237269A (zh) * 2010-04-21 2011-11-09 中国科学院微电子研究所 以氮化铝为势垒层的Mo基金属栅叠层结构的刻蚀方法
US20130221407A1 (en) * 2012-02-29 2013-08-29 Hsin-Ming Hou Multi-gate transistor device
CN102983168A (zh) * 2012-11-29 2013-03-20 北京大学 带双扩散的条形栅隧穿场效应晶体管及其制备方法
CN104900519A (zh) * 2014-03-04 2015-09-09 中芯国际集成电路制造(上海)有限公司 晶体管的形成方法
CN104347692A (zh) * 2014-09-04 2015-02-11 北京大学 抑制输出非线性开启的隧穿场效应晶体管及其制备方法
CN104576719A (zh) * 2014-12-03 2015-04-29 华为技术有限公司 隧穿场效应晶体管及其制备方法
CN104617137A (zh) * 2015-01-19 2015-05-13 华为技术有限公司 一种场效应器件及其制备方法
US9397199B1 (en) * 2016-01-11 2016-07-19 GlobalFoundries, Inc. Methods of forming multi-Vt III-V TFET devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110690214A (zh) * 2019-11-11 2020-01-14 湖南静芯微电子技术有限公司 一种多叉指ldmos-scr静电防护器件

Also Published As

Publication number Publication date
WO2018090301A1 (zh) 2018-05-24
CN109478562B (zh) 2022-04-22

Similar Documents

Publication Publication Date Title
US8614468B2 (en) Mask-less and implant free formation of complementary tunnel field effect transistors
US20050139936A1 (en) Transistor with silicon and carbon layer in the channel region
US6406951B1 (en) Fabrication of fully depleted field effect transistor with raised source and drain in SOI technology
CN103579324B (zh) 一种三面源隧穿场效应晶体管及其制备方法
CN103915345A (zh) 半导体器件及其制造方法
US20120289004A1 (en) Fabrication method of germanium-based n-type schottky field effect transistor
CN103632973A (zh) 半导体器件及其制造方法
CN103594376A (zh) 一种结调制型隧穿场效应晶体管及其制备方法
CN102945861A (zh) 条形栅调制型隧穿场效应晶体管及其制备方法
CN103560144A (zh) 抑制隧穿晶体管泄漏电流的方法及相应的器件和制备方法
CN103377947B (zh) 一种半导体结构及其制造方法
CN103489779A (zh) 半导体结构及其制造方法
US9953977B1 (en) FinFET semiconductor device
US6395589B1 (en) Fabrication of fully depleted field effect transistor with high-K gate dielectric in SOI technology
CN103811349A (zh) 半导体结构及其制造方法
CN103377946B (zh) 一种半导体结构及其制造方法
CN106935505A (zh) 鳍式场效应晶体管的形成方法
CN109478562A (zh) 隧穿场效应晶体管及其制造方法
CN102364690B (zh) 一种隧穿场效应晶体管及其制备方法
CN106558493B (zh) 鳍式场效应管的形成方法
US11799018B2 (en) Semiconductor structure and method for forming the same
US11201246B2 (en) Field-effect transistor structure and fabrication method
WO2017079928A1 (zh) 隧穿场效应晶体管及其制备方法
CN113745314A (zh) 冷源mos晶体管及制作方法
KR20120050311A (ko) 반도체 소자 및 그 제조 방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant