CN102104052B - 光电转换器件 - Google Patents

光电转换器件 Download PDF

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Publication number
CN102104052B
CN102104052B CN201010580456.1A CN201010580456A CN102104052B CN 102104052 B CN102104052 B CN 102104052B CN 201010580456 A CN201010580456 A CN 201010580456A CN 102104052 B CN102104052 B CN 102104052B
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China
Prior art keywords
photoelectric conversion
regions
insulating film
depression
conversion device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201010580456.1A
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English (en)
Chinese (zh)
Other versions
CN102104052A (zh
Inventor
工藤正稔
林良之
齐藤和宏
加藤太朗
福元嘉彦
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN102104052A publication Critical patent/CN102104052A/zh
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Publication of CN102104052B publication Critical patent/CN102104052B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CN201010580456.1A 2009-12-14 2010-12-09 光电转换器件 Expired - Fee Related CN102104052B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009283449A JP2011124522A (ja) 2009-12-14 2009-12-14 光電変換装置
JP2009-283449 2009-12-14

Publications (2)

Publication Number Publication Date
CN102104052A CN102104052A (zh) 2011-06-22
CN102104052B true CN102104052B (zh) 2012-12-19

Family

ID=43821991

Family Applications (1)

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CN201010580456.1A Expired - Fee Related CN102104052B (zh) 2009-12-14 2010-12-09 光电转换器件

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US (1) US8471301B2 (enExample)
EP (1) EP2333834A3 (enExample)
JP (1) JP2011124522A (enExample)
CN (1) CN102104052B (enExample)
TW (1) TWI452682B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6054069B2 (ja) 2012-06-18 2016-12-27 浜松ホトニクス株式会社 固体撮像装置
JP7023109B2 (ja) 2015-06-05 2022-02-21 ソニーグループ株式会社 固体撮像装置
JP6636620B2 (ja) * 2016-04-27 2020-01-29 富士フイルム株式会社 指標生成方法、測定方法、及び指標生成装置
JP6800610B2 (ja) * 2016-05-24 2020-12-16 キヤノン株式会社 光電変換装置及び画像読み取り装置
JP6711692B2 (ja) * 2016-05-24 2020-06-17 キヤノン株式会社 光電変換装置及び画像読み取り装置
JP6650898B2 (ja) * 2017-02-28 2020-02-19 キヤノン株式会社 光電変換装置、電子機器および輸送機器
JP7084700B2 (ja) * 2017-06-16 2022-06-15 キヤノン株式会社 光電変換装置およびスキャナ

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JPS6472557A (en) * 1987-09-11 1989-03-17 Seiko Instr & Electronics Image sensor
JPH06125068A (ja) 1992-10-14 1994-05-06 Mitsubishi Electric Corp 固体撮像素子
JP3584575B2 (ja) * 1995-10-13 2004-11-04 ソニー株式会社 光学的素子
JPH1098176A (ja) * 1996-09-19 1998-04-14 Toshiba Corp 固体撮像装置
JP3455655B2 (ja) * 1997-03-03 2003-10-14 株式会社東芝 固体撮像装置および固体撮像装置応用システム
JP2001007380A (ja) * 1999-06-25 2001-01-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6806151B2 (en) * 2001-12-14 2004-10-19 Texas Instruments Incorporated Methods and apparatus for inducing stress in a semiconductor device
JP2003249639A (ja) * 2002-02-22 2003-09-05 Sony Corp 光電変換装置およびその製造方法ならびに固体撮像装置ならびにその製造方法
JP4442157B2 (ja) 2003-08-20 2010-03-31 ソニー株式会社 光電変換装置及び固体撮像装置
US7880255B2 (en) * 2004-07-19 2011-02-01 Micron Technology, Inc. Pixel cell having a grated interface
JP5116209B2 (ja) * 2004-11-26 2013-01-09 キヤノン株式会社 光電変換装置、マルチチップ型イメージセンサ、密着型イメージセンサおよび画像読取装置
JP4658732B2 (ja) * 2005-08-09 2011-03-23 ローム株式会社 フォトダイオードおよびフォトトランジスタ
US7456452B2 (en) * 2005-12-15 2008-11-25 Micron Technology, Inc. Light sensor having undulating features for CMOS imager
JP5098310B2 (ja) * 2006-11-28 2012-12-12 凸版印刷株式会社 固体撮像装置の製造方法
JP2008135564A (ja) * 2006-11-28 2008-06-12 Hamamatsu Photonics Kk フォトダイオード
KR100825806B1 (ko) * 2007-02-21 2008-04-29 삼성전자주식회사 Ｃｍｏｓ 이미지 센서의 픽셀 및 그의 형성 방법
WO2009060916A1 (ja) * 2007-11-09 2009-05-14 Asahi Glass Co., Ltd. 透光性基板、その製造方法、有機ｌｅｄ素子およびその製造方法
JP5123701B2 (ja) * 2008-03-13 2013-01-23 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
JPWO2009116531A1 (ja) * 2008-03-18 2011-07-21 旭硝子株式会社 電子デバイス用基板、有機ｌｅｄ素子用積層体及びその製造方法、有機ｌｅｄ素子及びその製造方法

Non-Patent Citations (1)

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Title
JP特开平9-115667A 1997.05.02

Also Published As

Publication number Publication date
TW201125113A (en) 2011-07-16
CN102104052A (zh) 2011-06-22
EP2333834A2 (en) 2011-06-15
US20110140219A1 (en) 2011-06-16
JP2011124522A (ja) 2011-06-23
EP2333834A3 (en) 2012-06-13
TWI452682B (zh) 2014-09-11
US8471301B2 (en) 2013-06-25

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