JP2011124522A - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP2011124522A
JP2011124522A JP2009283449A JP2009283449A JP2011124522A JP 2011124522 A JP2011124522 A JP 2011124522A JP 2009283449 A JP2009283449 A JP 2009283449A JP 2009283449 A JP2009283449 A JP 2009283449A JP 2011124522 A JP2011124522 A JP 2011124522A
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JP
Japan
Prior art keywords
photoelectric conversion
region
insulating film
recess
conversion device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009283449A
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English (en)
Japanese (ja)
Other versions
JP2011124522A5 (enExample
Inventor
Masatoshi Kudo
正稔 工藤
Yoshiyuki Hayashi
良之 林
Kazuhiro Saito
和宏 斉藤
Taro Kato
太朗 加藤
Yoshihiko Fukumoto
嘉彦 福元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009283449A priority Critical patent/JP2011124522A/ja
Priority to EP10190863A priority patent/EP2333834A3/en
Priority to TW099142612A priority patent/TWI452682B/zh
Priority to US12/963,350 priority patent/US8471301B2/en
Priority to CN201010580456.1A priority patent/CN102104052B/zh
Publication of JP2011124522A publication Critical patent/JP2011124522A/ja
Publication of JP2011124522A5 publication Critical patent/JP2011124522A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2009283449A 2009-12-14 2009-12-14 光電変換装置 Pending JP2011124522A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009283449A JP2011124522A (ja) 2009-12-14 2009-12-14 光電変換装置
EP10190863A EP2333834A3 (en) 2009-12-14 2010-11-11 Photoelectric conversion device
TW099142612A TWI452682B (zh) 2009-12-14 2010-12-07 光電轉換裝置
US12/963,350 US8471301B2 (en) 2009-12-14 2010-12-08 Photoelectric conversion device having embedded recess regions arranged in light-receiving surface
CN201010580456.1A CN102104052B (zh) 2009-12-14 2010-12-09 光电转换器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009283449A JP2011124522A (ja) 2009-12-14 2009-12-14 光電変換装置

Publications (2)

Publication Number Publication Date
JP2011124522A true JP2011124522A (ja) 2011-06-23
JP2011124522A5 JP2011124522A5 (enExample) 2013-02-07

Family

ID=43821991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009283449A Pending JP2011124522A (ja) 2009-12-14 2009-12-14 光電変換装置

Country Status (5)

Country Link
US (1) US8471301B2 (enExample)
EP (1) EP2333834A3 (enExample)
JP (1) JP2011124522A (enExample)
CN (1) CN102104052B (enExample)
TW (1) TWI452682B (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013190864A1 (ja) 2012-06-18 2013-12-27 浜松ホトニクス株式会社 固体撮像装置
EP3249690A2 (en) 2016-05-24 2017-11-29 Canon Kabushiki Kaisha Photoelectric conversion apparatus and image reading apparatus
JP2017212303A (ja) * 2016-05-24 2017-11-30 キヤノン株式会社 光電変換装置及び画像読み取り装置
JPWO2016194654A1 (ja) * 2015-06-05 2018-03-22 ソニー株式会社 固体撮像素子
CN109073362A (zh) * 2016-04-27 2018-12-21 富士胶片株式会社 指标生成方法、测定方法及指标生成装置
JP2019004073A (ja) * 2017-06-16 2019-01-10 キヤノン株式会社 光電変換装置およびスキャナ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6650898B2 (ja) * 2017-02-28 2020-02-19 キヤノン株式会社 光電変換装置、電子機器および輸送機器

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6472557A (en) * 1987-09-11 1989-03-17 Seiko Instr & Electronics Image sensor
JPH1098176A (ja) * 1996-09-19 1998-04-14 Toshiba Corp 固体撮像装置
JPH10308507A (ja) * 1997-03-03 1998-11-17 Toshiba Corp 固体撮像装置および固体撮像装置応用システム
JP2003249639A (ja) * 2002-02-22 2003-09-05 Sony Corp 光電変換装置およびその製造方法ならびに固体撮像装置ならびにその製造方法
JP2006156545A (ja) * 2004-11-26 2006-06-15 Canon Inc 光電変換装置、マルチチップ型イメージセンサ及び密着型イメージセンサ
JP2007048903A (ja) * 2005-08-09 2007-02-22 Rohm Co Ltd フォトダイオードおよびフォトトランジスタ
JP2008507152A (ja) * 2004-07-19 2008-03-06 マイクロン テクノロジー インコーポレイテッド 格子界面を有する画素セル

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06125068A (ja) 1992-10-14 1994-05-06 Mitsubishi Electric Corp 固体撮像素子
JP3584575B2 (ja) * 1995-10-13 2004-11-04 ソニー株式会社 光学的素子
JP2001007380A (ja) * 1999-06-25 2001-01-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6806151B2 (en) * 2001-12-14 2004-10-19 Texas Instruments Incorporated Methods and apparatus for inducing stress in a semiconductor device
JP4442157B2 (ja) 2003-08-20 2010-03-31 ソニー株式会社 光電変換装置及び固体撮像装置
US7456452B2 (en) * 2005-12-15 2008-11-25 Micron Technology, Inc. Light sensor having undulating features for CMOS imager
JP5098310B2 (ja) * 2006-11-28 2012-12-12 凸版印刷株式会社 固体撮像装置の製造方法
JP2008135564A (ja) * 2006-11-28 2008-06-12 Hamamatsu Photonics Kk フォトダイオード
KR100825806B1 (ko) * 2007-02-21 2008-04-29 삼성전자주식회사 Ｃｍｏｓ 이미지 센서의 픽셀 및 그의 형성 방법
WO2009060916A1 (ja) * 2007-11-09 2009-05-14 Asahi Glass Co., Ltd. 透光性基板、その製造方法、有機ｌｅｄ素子およびその製造方法
JP5123701B2 (ja) * 2008-03-13 2013-01-23 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
JPWO2009116531A1 (ja) * 2008-03-18 2011-07-21 旭硝子株式会社 電子デバイス用基板、有機ｌｅｄ素子用積層体及びその製造方法、有機ｌｅｄ素子及びその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6472557A (en) * 1987-09-11 1989-03-17 Seiko Instr & Electronics Image sensor
JPH1098176A (ja) * 1996-09-19 1998-04-14 Toshiba Corp 固体撮像装置
JPH10308507A (ja) * 1997-03-03 1998-11-17 Toshiba Corp 固体撮像装置および固体撮像装置応用システム
JP2003249639A (ja) * 2002-02-22 2003-09-05 Sony Corp 光電変換装置およびその製造方法ならびに固体撮像装置ならびにその製造方法
JP2008507152A (ja) * 2004-07-19 2008-03-06 マイクロン テクノロジー インコーポレイテッド 格子界面を有する画素セル
JP2006156545A (ja) * 2004-11-26 2006-06-15 Canon Inc 光電変換装置、マルチチップ型イメージセンサ及び密着型イメージセンサ
JP2007048903A (ja) * 2005-08-09 2007-02-22 Rohm Co Ltd フォトダイオードおよびフォトトランジスタ

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013190864A1 (ja) 2012-06-18 2013-12-27 浜松ホトニクス株式会社 固体撮像装置
US9559132B2 (en) 2012-06-18 2017-01-31 Hamamatsu Photonics K.K. Solid-state image capture device
US11990492B2 (en) 2015-06-05 2024-05-21 Sony Group Corporation Solid-state imaging sensor
US11557621B2 (en) 2015-06-05 2023-01-17 Sony Group Corporation Solid-state imaging sensor
US11121161B2 (en) 2015-06-05 2021-09-14 Sony Corporation Solid-state imaging sensor
JPWO2016194654A1 (ja) * 2015-06-05 2018-03-22 ソニー株式会社 固体撮像素子
JP2021097238A (ja) * 2015-06-05 2021-06-24 ソニーグループ株式会社 光検出装置、および測距センサ
CN109073362B (zh) * 2016-04-27 2020-11-27 富士胶片株式会社 指标生成方法、测定方法及指标生成装置
CN109073362A (zh) * 2016-04-27 2018-12-21 富士胶片株式会社 指标生成方法、测定方法及指标生成装置
US10453878B2 (en) 2016-05-24 2019-10-22 Canon Kabushiki Kaisha Photoelectric conversion apparatus and image-reading apparatus
RU2672765C2 (ru) * 2016-05-24 2018-11-19 Кэнон Кабусики Кайся Устройство фотоэлектрического преобразования и устройство считывания изображения
US10103182B2 (en) 2016-05-24 2018-10-16 Canon Kabushiki Kaisha Photoelectric conversion apparatus and image reading apparatus
JP2017212303A (ja) * 2016-05-24 2017-11-30 キヤノン株式会社 光電変換装置及び画像読み取り装置
JP2017212304A (ja) * 2016-05-24 2017-11-30 キヤノン株式会社 光電変換装置及び画像読み取り装置
EP3249690A2 (en) 2016-05-24 2017-11-29 Canon Kabushiki Kaisha Photoelectric conversion apparatus and image reading apparatus
JP2019004073A (ja) * 2017-06-16 2019-01-10 キヤノン株式会社 光電変換装置およびスキャナ
US10297633B2 (en) 2017-06-16 2019-05-21 Canon Kabushiki Kaisha Photoelectric conversion device and scanner
JP7084700B2 (ja) 2017-06-16 2022-06-15 キヤノン株式会社 光電変換装置およびスキャナ

Also Published As

Publication number Publication date
TW201125113A (en) 2011-07-16
CN102104052A (zh) 2011-06-22
EP2333834A2 (en) 2011-06-15
CN102104052B (zh) 2012-12-19
US20110140219A1 (en) 2011-06-16
EP2333834A3 (en) 2012-06-13
TWI452682B (zh) 2014-09-11
US8471301B2 (en) 2013-06-25

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