TWI452682B - 光電轉換裝置 - Google Patents

光電轉換裝置 Download PDF

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Publication number
TWI452682B
TWI452682B TW099142612A TW99142612A TWI452682B TW I452682 B TWI452682 B TW I452682B TW 099142612 A TW099142612 A TW 099142612A TW 99142612 A TW99142612 A TW 99142612A TW I452682 B TWI452682 B TW I452682B
Authority
TW
Taiwan
Prior art keywords
photoelectric conversion
insulating film
semiconductor region
recess
region
Prior art date
Application number
TW099142612A
Other languages
English (en)
Chinese (zh)
Other versions
TW201125113A (en
Inventor
工藤正稔
林良之
齊藤和宏
加藤太朗
福元嘉彥
Original Assignee
佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 佳能股份有限公司 filed Critical 佳能股份有限公司
Publication of TW201125113A publication Critical patent/TW201125113A/zh
Application granted granted Critical
Publication of TWI452682B publication Critical patent/TWI452682B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
TW099142612A 2009-12-14 2010-12-07 光電轉換裝置 TWI452682B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009283449A JP2011124522A (ja) 2009-12-14 2009-12-14 光電変換装置

Publications (2)

Publication Number Publication Date
TW201125113A TW201125113A (en) 2011-07-16
TWI452682B true TWI452682B (zh) 2014-09-11

Family

ID=43821991

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099142612A TWI452682B (zh) 2009-12-14 2010-12-07 光電轉換裝置

Country Status (5)

Country Link
US (1) US8471301B2 (enExample)
EP (1) EP2333834A3 (enExample)
JP (1) JP2011124522A (enExample)
CN (1) CN102104052B (enExample)
TW (1) TWI452682B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6054069B2 (ja) 2012-06-18 2016-12-27 浜松ホトニクス株式会社 固体撮像装置
JP7023109B2 (ja) 2015-06-05 2022-02-21 ソニーグループ株式会社 固体撮像装置
JP6636620B2 (ja) * 2016-04-27 2020-01-29 富士フイルム株式会社 指標生成方法、測定方法、及び指標生成装置
JP6800610B2 (ja) * 2016-05-24 2020-12-16 キヤノン株式会社 光電変換装置及び画像読み取り装置
JP6711692B2 (ja) * 2016-05-24 2020-06-17 キヤノン株式会社 光電変換装置及び画像読み取り装置
JP6650898B2 (ja) * 2017-02-28 2020-02-19 キヤノン株式会社 光電変換装置、電子機器および輸送機器
JP7084700B2 (ja) * 2017-06-16 2022-06-15 キヤノン株式会社 光電変換装置およびスキャナ

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010042864A1 (en) * 1999-06-25 2001-11-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US20060011955A1 (en) * 2004-07-19 2006-01-19 Baggenstoss William J Pixel cell having a grated interface
JP2008135564A (ja) * 2006-11-28 2008-06-12 Hamamatsu Photonics Kk フォトダイオード
US20080197388A1 (en) * 2007-02-21 2008-08-21 Samsung Electronics Co., Ltd. Pixel structure of CMOS image sensor and method of forming the pixel structure
US20090230491A1 (en) * 2008-03-13 2009-09-17 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, and photoelectric conversion device manufacturing method

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JPS6472557A (en) * 1987-09-11 1989-03-17 Seiko Instr & Electronics Image sensor
JPH06125068A (ja) 1992-10-14 1994-05-06 Mitsubishi Electric Corp 固体撮像素子
JP3584575B2 (ja) * 1995-10-13 2004-11-04 ソニー株式会社 光学的素子
JPH1098176A (ja) * 1996-09-19 1998-04-14 Toshiba Corp 固体撮像装置
JP3455655B2 (ja) * 1997-03-03 2003-10-14 株式会社東芝 固体撮像装置および固体撮像装置応用システム
US6806151B2 (en) * 2001-12-14 2004-10-19 Texas Instruments Incorporated Methods and apparatus for inducing stress in a semiconductor device
JP2003249639A (ja) * 2002-02-22 2003-09-05 Sony Corp 光電変換装置およびその製造方法ならびに固体撮像装置ならびにその製造方法
JP4442157B2 (ja) 2003-08-20 2010-03-31 ソニー株式会社 光電変換装置及び固体撮像装置
JP5116209B2 (ja) * 2004-11-26 2013-01-09 キヤノン株式会社 光電変換装置、マルチチップ型イメージセンサ、密着型イメージセンサおよび画像読取装置
JP4658732B2 (ja) * 2005-08-09 2011-03-23 ローム株式会社 フォトダイオードおよびフォトトランジスタ
US7456452B2 (en) * 2005-12-15 2008-11-25 Micron Technology, Inc. Light sensor having undulating features for CMOS imager
JP5098310B2 (ja) * 2006-11-28 2012-12-12 凸版印刷株式会社 固体撮像装置の製造方法
WO2009060916A1 (ja) * 2007-11-09 2009-05-14 Asahi Glass Co., Ltd. 透光性基板、その製造方法、有機ｌｅｄ素子およびその製造方法
JPWO2009116531A1 (ja) * 2008-03-18 2011-07-21 旭硝子株式会社 電子デバイス用基板、有機ｌｅｄ素子用積層体及びその製造方法、有機ｌｅｄ素子及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010042864A1 (en) * 1999-06-25 2001-11-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US20060011955A1 (en) * 2004-07-19 2006-01-19 Baggenstoss William J Pixel cell having a grated interface
JP2008135564A (ja) * 2006-11-28 2008-06-12 Hamamatsu Photonics Kk フォトダイオード
US20080197388A1 (en) * 2007-02-21 2008-08-21 Samsung Electronics Co., Ltd. Pixel structure of CMOS image sensor and method of forming the pixel structure
US20090230491A1 (en) * 2008-03-13 2009-09-17 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, and photoelectric conversion device manufacturing method

Also Published As

Publication number Publication date
TW201125113A (en) 2011-07-16
CN102104052A (zh) 2011-06-22
EP2333834A2 (en) 2011-06-15
CN102104052B (zh) 2012-12-19
US20110140219A1 (en) 2011-06-16
JP2011124522A (ja) 2011-06-23
EP2333834A3 (en) 2012-06-13
US8471301B2 (en) 2013-06-25

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