JP5098310B2 - 固体撮像装置の製造方法 - Google Patents
固体撮像装置の製造方法 Download PDFInfo
- Publication number
- JP5098310B2 JP5098310B2 JP2006320370A JP2006320370A JP5098310B2 JP 5098310 B2 JP5098310 B2 JP 5098310B2 JP 2006320370 A JP2006320370 A JP 2006320370A JP 2006320370 A JP2006320370 A JP 2006320370A JP 5098310 B2 JP5098310 B2 JP 5098310B2
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- state imaging
- imaging device
- solid
- transparent film
- light receiving
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- 238000003384 imaging method Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title description 9
- 238000000034 method Methods 0.000 title description 8
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000004925 Acrylic resin Substances 0.000 description 5
- 229920000178 Acrylic resin Polymers 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000000049 pigment Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000001444 catalytic combustion detection Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 241000226585 Antennaria plantaginifolia Species 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
- H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
- Optical Filters (AREA)
Description
Claims (1)
- 複数の光電変換素子が2次元的に配置され、表面に複数の光電変換素子に対応する矩形の受光面を有する基板上に、透明膜を形成する工程、
前記透明膜上に、前記受光面に対応する位置に平面形状が糸巻状の開口を有するレジストパターンを形成する工程、
前記レジストパターンをマスクとして前記透明膜をドライエッチングし、前記受光面に対応する位置に略矩形の凹曲面を有する平坦化層を形成する工程、及び
前記略矩形の凹曲面に、前記平坦化層よりも大きい屈折率を有する、複数色の、凸レンズの機能を有するカラーフィルタを形成する工程
を具備することを特徴とする固体撮像装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006320370A JP5098310B2 (ja) | 2006-11-28 | 2006-11-28 | 固体撮像装置の製造方法 |
PCT/JP2007/072643 WO2008065963A1 (fr) | 2006-11-28 | 2007-11-22 | Dispositif d'imagerie semi-conducteur et son procédé de fabrication |
CN2007800441248A CN101558495B (zh) | 2006-11-28 | 2007-11-22 | 固体摄像装置及其制造方法 |
KR1020097010833A KR20090085635A (ko) | 2006-11-28 | 2007-11-22 | 고체 촬상 장치 및 그 제조 방법 |
TW096144682A TWI464865B (zh) | 2006-11-28 | 2007-11-26 | 固態攝像裝置之製造方法 |
US12/454,000 US8030115B2 (en) | 2006-11-28 | 2009-05-28 | Solid-state image pickup device with color filter and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006320370A JP5098310B2 (ja) | 2006-11-28 | 2006-11-28 | 固体撮像装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008135551A JP2008135551A (ja) | 2008-06-12 |
JP5098310B2 true JP5098310B2 (ja) | 2012-12-12 |
Family
ID=39467754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006320370A Expired - Fee Related JP5098310B2 (ja) | 2006-11-28 | 2006-11-28 | 固体撮像装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8030115B2 (ja) |
JP (1) | JP5098310B2 (ja) |
KR (1) | KR20090085635A (ja) |
CN (1) | CN101558495B (ja) |
TW (1) | TWI464865B (ja) |
WO (1) | WO2008065963A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2708755A1 (en) * | 2007-12-17 | 2009-06-25 | Drexel University | Crosslinked hydrogels |
JP2010239076A (ja) * | 2009-03-31 | 2010-10-21 | Sony Corp | 固体撮像装置とその製造方法、及び電子機器 |
JP2011124522A (ja) * | 2009-12-14 | 2011-06-23 | Canon Inc | 光電変換装置 |
JP5736253B2 (ja) * | 2011-06-30 | 2015-06-17 | セイコーインスツル株式会社 | 光センサ装置 |
JP6003316B2 (ja) * | 2012-07-12 | 2016-10-05 | ソニー株式会社 | 固体撮像装置、電子機器 |
JP2016149417A (ja) * | 2015-02-10 | 2016-08-18 | キヤノン株式会社 | 固体撮像装置、固体撮像装置の製造方法及び撮像システム |
TW201740141A (zh) * | 2016-05-13 | 2017-11-16 | 原相科技股份有限公司 | 彩色濾光陣列與應用其之影像感測裝置 |
CN108565274A (zh) * | 2018-05-07 | 2018-09-21 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
CN109817653A (zh) * | 2019-02-14 | 2019-05-28 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
CN111641762B (zh) * | 2020-05-28 | 2021-11-02 | 维沃移动通信有限公司 | 摄像模组及电子设备 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0442966A (ja) * | 1990-06-06 | 1992-02-13 | Mitsubishi Electric Corp | カラー固体撮像素子 |
JPH0555536A (ja) * | 1991-08-29 | 1993-03-05 | Fuji Xerox Co Ltd | イメージセンサ |
JPH0927608A (ja) * | 1995-05-11 | 1997-01-28 | Sony Corp | 固体撮像装置とその製造方法 |
JP2841037B2 (ja) * | 1995-07-26 | 1998-12-24 | エルジイ・セミコン・カンパニイ・リミテッド | Ccd固体撮像素子の製造方法 |
JPH11284158A (ja) * | 1998-03-27 | 1999-10-15 | Sony Corp | 固体撮像素子と固体撮像素子の製造方法 |
JP2000066016A (ja) * | 1998-08-19 | 2000-03-03 | Sony Corp | 固体撮像素子用カラーフィルタの製造方法及びカラー固体撮像素子の製造方法 |
JP2002110953A (ja) * | 2000-10-04 | 2002-04-12 | Toshiba Corp | 固体撮像装置 |
US7119319B2 (en) * | 2004-04-08 | 2006-10-10 | Canon Kabushiki Kaisha | Solid-state image sensing element and its design support method, and image sensing device |
JP4830306B2 (ja) | 2004-06-23 | 2011-12-07 | 凸版印刷株式会社 | 固体撮像素子の製造方法 |
KR20060097343A (ko) | 2005-03-07 | 2006-09-14 | 삼성전자주식회사 | 이미지 센서 및 그 제조방법 |
JP2007109801A (ja) * | 2005-10-12 | 2007-04-26 | Sumitomo Electric Ind Ltd | 固体撮像装置とその製造方法 |
-
2006
- 2006-11-28 JP JP2006320370A patent/JP5098310B2/ja not_active Expired - Fee Related
-
2007
- 2007-11-22 WO PCT/JP2007/072643 patent/WO2008065963A1/ja active Application Filing
- 2007-11-22 CN CN2007800441248A patent/CN101558495B/zh not_active Expired - Fee Related
- 2007-11-22 KR KR1020097010833A patent/KR20090085635A/ko not_active Application Discontinuation
- 2007-11-26 TW TW096144682A patent/TWI464865B/zh not_active IP Right Cessation
-
2009
- 2009-05-28 US US12/454,000 patent/US8030115B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101558495A (zh) | 2009-10-14 |
WO2008065963A1 (fr) | 2008-06-05 |
US8030115B2 (en) | 2011-10-04 |
KR20090085635A (ko) | 2009-08-07 |
JP2008135551A (ja) | 2008-06-12 |
TW200834905A (en) | 2008-08-16 |
CN101558495B (zh) | 2012-05-23 |
TWI464865B (zh) | 2014-12-11 |
US20090230492A1 (en) | 2009-09-17 |
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