CN102097471B - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
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- CN102097471B CN102097471B CN201010529217.3A CN201010529217A CN102097471B CN 102097471 B CN102097471 B CN 102097471B CN 201010529217 A CN201010529217 A CN 201010529217A CN 102097471 B CN102097471 B CN 102097471B
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- conduction type
- raceway groove
- trap
- semiconductor device
- gate electrode
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 84
- 210000000746 body region Anatomy 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000012535 impurity Substances 0.000 claims description 47
- 238000002955 isolation Methods 0.000 claims description 13
- 108091006146 Channels Proteins 0.000 description 68
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910044991 metal oxide Inorganic materials 0.000 description 10
- 150000004706 metal oxides Chemical class 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 238000009825 accumulation Methods 0.000 description 8
- 239000012212 insulator Substances 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002789 length control Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090120116A KR101175228B1 (ko) | 2009-12-04 | 2009-12-04 | 반도체 장치 |
KR10-2009-0120116 | 2009-12-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102097471A CN102097471A (zh) | 2011-06-15 |
CN102097471B true CN102097471B (zh) | 2015-08-19 |
Family
ID=44081190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010529217.3A Active CN102097471B (zh) | 2009-12-04 | 2010-10-25 | 半导体器件 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8546881B2 (zh) |
KR (1) | KR101175228B1 (zh) |
CN (1) | CN102097471B (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8575702B2 (en) * | 2009-11-27 | 2013-11-05 | Magnachip Semiconductor, Ltd. | Semiconductor device and method for fabricating semiconductor device |
CN103094317B (zh) * | 2011-11-01 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | 隔离型高耐压场效应管的版图结构 |
CN103199110B (zh) * | 2012-01-09 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | 一种nldmos器件及其制造方法 |
CN103681791B (zh) * | 2012-09-05 | 2016-12-21 | 上海华虹宏力半导体制造有限公司 | Nldmos器件及制造方法 |
CN104064596B (zh) * | 2013-03-19 | 2016-11-02 | 上海华虹宏力半导体制造有限公司 | Nldmos器件及其制造方法 |
KR102068842B1 (ko) * | 2013-04-16 | 2020-02-12 | 매그나칩 반도체 유한회사 | 반도체 전력소자 |
CN104659090B (zh) * | 2013-11-18 | 2017-08-08 | 上海华虹宏力半导体制造有限公司 | Ldmos器件及制造方法 |
KR102180554B1 (ko) | 2013-12-04 | 2020-11-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 이의 제조 방법 |
US10430556B2 (en) * | 2014-04-10 | 2019-10-01 | Walgreen Co. | Location triggering for prescription ready notifications |
KR102272382B1 (ko) | 2014-11-21 | 2021-07-05 | 삼성전자주식회사 | 반도체 소자 |
US11137870B2 (en) | 2015-08-11 | 2021-10-05 | Ebay Inc. | Adjusting an interface based on a cognitive mode |
CN108574014B (zh) * | 2017-03-13 | 2021-08-27 | 中芯国际集成电路制造(上海)有限公司 | Ldmos器件及其制造方法 |
KR102458310B1 (ko) * | 2018-06-19 | 2022-10-24 | 삼성전자주식회사 | 집적회로 소자 |
KR102233049B1 (ko) * | 2019-07-24 | 2021-03-26 | 주식회사 키 파운드리 | 채널 길이 조정이 용이한 반도체 소자 및 그 제조방법 |
KR102265031B1 (ko) * | 2019-07-25 | 2021-06-14 | 주식회사 키 파운드리 | 채널 길이 조정이 용이한 반도체 소자 및 그 제조방법 |
TWI748239B (zh) * | 2019-08-30 | 2021-12-01 | 新唐科技股份有限公司 | 高電壓積體電路及其半導體結構 |
CN115547931B (zh) * | 2022-12-05 | 2023-02-14 | 合肥晶合集成电路股份有限公司 | 半导体器件的制作方法、半导体器件以及晶体管 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101573799A (zh) * | 2007-01-04 | 2009-11-04 | 飞兆半导体公司 | 集成互补低电压射频横向双扩散金属氧化物半导体 |
CN101572271A (zh) * | 2008-04-30 | 2009-11-04 | 万国半导体股份有限公司 | 短沟槽横向金属氧化物半导体场效应晶体管及其制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
US5739061A (en) | 1993-10-26 | 1998-04-14 | Fuji Electric Co., Ltd. | Method of manufacturing a semiconductor device using gate side wall as mask for self-alignment |
JP3186421B2 (ja) | 1994-05-13 | 2001-07-11 | 富士電機株式会社 | 半導体装置の製造方法 |
JPH07176640A (ja) | 1993-10-26 | 1995-07-14 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
KR100393201B1 (ko) * | 2001-04-16 | 2003-07-31 | 페어차일드코리아반도체 주식회사 | 낮은 온 저항과 높은 브레이크다운 전압을 갖는 고전압수평형 디모스 트랜지스터 |
JP4171251B2 (ja) * | 2002-07-02 | 2008-10-22 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
KR100958421B1 (ko) * | 2002-09-14 | 2010-05-18 | 페어차일드코리아반도체 주식회사 | 전력 소자 및 그 제조방법 |
US7732863B2 (en) * | 2008-05-13 | 2010-06-08 | Texas Instruments Incorporated | Laterally diffused MOSFET |
-
2009
- 2009-12-04 KR KR1020090120116A patent/KR101175228B1/ko active IP Right Grant
-
2010
- 2010-09-02 US US12/875,021 patent/US8546881B2/en active Active
- 2010-10-25 CN CN201010529217.3A patent/CN102097471B/zh active Active
-
2013
- 2013-09-26 US US14/038,719 patent/US9099557B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101573799A (zh) * | 2007-01-04 | 2009-11-04 | 飞兆半导体公司 | 集成互补低电压射频横向双扩散金属氧化物半导体 |
CN101572271A (zh) * | 2008-04-30 | 2009-11-04 | 万国半导体股份有限公司 | 短沟槽横向金属氧化物半导体场效应晶体管及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US8546881B2 (en) | 2013-10-01 |
US20140027846A1 (en) | 2014-01-30 |
US9099557B2 (en) | 2015-08-04 |
KR101175228B1 (ko) | 2012-08-21 |
US20110133277A1 (en) | 2011-06-09 |
KR20110063161A (ko) | 2011-06-10 |
CN102097471A (zh) | 2011-06-15 |
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Effective date of registration: 20201022 Address after: Han Guozhongqingbeidao Patentee after: Key Foundry Co.,Ltd. Address before: Cheongju Chungbuk Korea Patentee before: MagnaChip Semiconductor, Ltd. |
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Address after: Republic of Korea Patentee after: Aisi Kaifang Semiconductor Co.,Ltd. Country or region after: Republic of Korea Address before: Han Guozhongqingbeidao Patentee before: Key Foundry Co.,Ltd. Country or region before: Republic of Korea |
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