CN102081986B - 用于形成太阳能电池电极的导电膏 - Google Patents
用于形成太阳能电池电极的导电膏 Download PDFInfo
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- CN102081986B CN102081986B CN201010529565.0A CN201010529565A CN102081986B CN 102081986 B CN102081986 B CN 102081986B CN 201010529565 A CN201010529565 A CN 201010529565A CN 102081986 B CN102081986 B CN 102081986B
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- oxide
- conductive paste
- electrode
- tellurium
- frit
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Classifications
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/122—Silica-free oxide glass compositions containing oxides of As, Sb, Bi, Mo, W, V, Te as glass formers
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/14—Silica-free oxide glass compositions containing boron
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/16—Silica-free oxide glass compositions containing phosphorus
- C03C3/21—Silica-free oxide glass compositions containing phosphorus containing titanium, zirconium, vanadium, tungsten or molybdenum
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1245—Inorganic substrates other than metallic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1262—Process of deposition of the inorganic material involving particles, e.g. carbon nanotubes [CNT], flakes
- C23C18/127—Preformed particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
Claims (7)
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CN201310747212.1A CN103730538B (zh) | 2009-10-28 | 2010-10-28 | 用于形成太阳能电池电极的导电膏 |
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JP2009247220A JP5559509B2 (ja) | 2009-10-28 | 2009-10-28 | 太陽電池電極形成用導電性ペースト |
JP2009-247220 | 2009-10-28 |
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CN102081986B true CN102081986B (zh) | 2014-05-14 |
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CN201310747212.1A Active CN103730538B (zh) | 2009-10-28 | 2010-10-28 | 用于形成太阳能电池电极的导电膏 |
CN201010529565.0A Active CN102081986B (zh) | 2009-10-28 | 2010-10-28 | 用于形成太阳能电池电极的导电膏 |
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US (3) | US8551368B2 (zh) |
EP (2) | EP3288040A1 (zh) |
JP (1) | JP5559509B2 (zh) |
KR (1) | KR101226861B1 (zh) |
CN (2) | CN103730538B (zh) |
CA (1) | CA2718204C (zh) |
TW (1) | TWI432539B (zh) |
Families Citing this family (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009066511A1 (ja) * | 2007-11-21 | 2009-05-28 | Zeon Corporation | 重合体組成物およびその利用 |
TWI589649B (zh) | 2010-05-04 | 2017-07-01 | 杜邦股份有限公司 | 包含鉛-碲-鋰-氧化物之厚膜膏及其在半導體裝置之製造中的用途 |
JP5011428B2 (ja) | 2010-10-07 | 2012-08-29 | 昭栄化学工業株式会社 | 太陽電池素子並びにその製造方法 |
JP6110311B2 (ja) * | 2011-01-18 | 2017-04-05 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 導電性ペースト組成物ならびにそれらから形成される太陽電池電極および接点 |
US8858842B2 (en) * | 2011-04-05 | 2014-10-14 | E I Du Pont De Nemours And Company | Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices |
KR101765986B1 (ko) | 2011-04-21 | 2017-08-07 | 소에이 가가쿠 고교 가부시키가이샤 | 도전성 페이스트 |
TW201248874A (en) * | 2011-05-16 | 2012-12-01 | Motech Ind Inc | Solar cell with back surface field structure and manufacturing method thereof |
US8790550B2 (en) * | 2011-06-06 | 2014-07-29 | E I Du Pont De Nemours And Company | Low temperature fireable thick film silver paste |
US8691119B2 (en) | 2011-08-11 | 2014-04-08 | E I Du Pont De Nemours And Company | Thick film paste containing lead-tellurium-lithium-titanium-oxide and its use in the manufacture of semiconductor devices |
US8696948B2 (en) | 2011-08-11 | 2014-04-15 | E I Du Pont De Nemours And Company | Thick film paste containing lead—tellurium—lithium—titanium—oxide and its use in the manufacture of semiconductor devices |
KR20130064659A (ko) * | 2011-12-08 | 2013-06-18 | 제일모직주식회사 | 태양전지 전극용 페이스트 조성물 및 이로부터 제조된 전극 |
DE102012221334B4 (de) | 2011-12-22 | 2018-10-25 | Schott Ag | Lötpaste und deren Verwendung zur Front- oder Rückseitenkontaktierung von siliziumbasierten Solarzellen |
JP5820278B2 (ja) * | 2012-01-10 | 2015-11-24 | シャープ株式会社 | 太陽電池及び太陽電池の製造方法 |
KR101908738B1 (ko) | 2012-04-17 | 2018-10-16 | 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 | 태양 전지 접촉용 전도성 후막 페이스트 |
EP2654087B1 (en) * | 2012-04-17 | 2018-02-14 | Heraeus Precious Metals North America Conshohocken LLC | Tellurium inorganic reaction systems for conductive thick film paste for solar cell contacts |
US8845932B2 (en) * | 2012-04-26 | 2014-09-30 | E I Du Pont De Nemours And Company | Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices |
JP5690780B2 (ja) * | 2012-07-18 | 2015-03-25 | 株式会社ノリタケカンパニーリミテド | Ag電極形成用ペースト組成物とその製造方法ならびに太陽電池 |
JP5937689B2 (ja) | 2012-09-18 | 2016-06-22 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 導電性ペースト及び太陽電池 |
JP6067726B2 (ja) * | 2012-09-26 | 2017-01-25 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 導電性ペースト及び太陽電池 |
EP2905813A4 (en) * | 2012-09-26 | 2016-04-27 | Heraeus Precious Metals North America Conshohocken Llc | CONDUCTIVE PASTE AND SOLAR CELL |
CN102898024A (zh) * | 2012-09-27 | 2013-01-30 | 广东风华高新科技股份有限公司 | 含碲玻璃材料及其制备方法和应用 |
KR101600652B1 (ko) | 2012-11-12 | 2016-03-07 | 제일모직주식회사 | 태양전지 전극용 페이스트 및 이로부터 제조된 전극 |
CN103117132B (zh) * | 2012-12-07 | 2016-08-24 | 蚌埠市智峰科技有限公司 | 一种含有顺丁烯二酸二丁酯的导电浆料的制备方法 |
WO2014104618A1 (ko) * | 2012-12-29 | 2014-07-03 | 제일모직 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
KR20140092744A (ko) | 2012-12-29 | 2014-07-24 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
KR101802546B1 (ko) * | 2012-12-29 | 2017-11-30 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
US9445519B2 (en) * | 2013-01-15 | 2016-09-13 | E I Du Pont De Nemours And Company | Method of manufacturing thick-film electrode |
JP5955791B2 (ja) * | 2013-02-12 | 2016-07-20 | 株式会社ノリタケカンパニーリミテド | ペースト組成物と太陽電池 |
KR101587683B1 (ko) | 2013-02-15 | 2016-01-21 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
KR101596548B1 (ko) * | 2013-03-27 | 2016-02-22 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
JP6170710B2 (ja) * | 2013-04-10 | 2017-07-26 | 株式会社ノリタケカンパニーリミテド | 太陽電池用導電性ペースト組成物の製造方法 |
KR101590227B1 (ko) * | 2013-06-05 | 2016-01-29 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
US9159864B2 (en) | 2013-07-25 | 2015-10-13 | First Solar, Inc. | Back contact paste with Te enrichment and copper doping control in thin film photovoltaic devices |
CN104347735A (zh) * | 2013-07-25 | 2015-02-11 | 比亚迪股份有限公司 | 一种太阳能电池片和太阳能电池组件 |
CN105409009A (zh) * | 2013-07-25 | 2016-03-16 | 纳美仕有限公司 | 导电性糊剂以及结晶系硅太阳能电池的制造方法 |
KR101693070B1 (ko) * | 2013-08-28 | 2017-01-04 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
CN104575661B (zh) * | 2013-10-25 | 2017-09-12 | 硕禾电子材料股份有限公司 | 一种导电浆及其制造方法 |
US9776911B2 (en) * | 2013-10-28 | 2017-10-03 | Ferro Corporation | Dielectric pastes for aluminum substrates |
CN103545012B (zh) * | 2013-11-11 | 2016-04-27 | 广东风华高新科技股份有限公司 | 滤波器用导电银浆及其制备方法 |
US9039937B1 (en) | 2013-12-17 | 2015-05-26 | Samsung Sdi Co., Ltd. | Composition for solar cell electrodes and electrode fabricated using the same |
KR20150072994A (ko) * | 2013-12-20 | 2015-06-30 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
US20150194546A1 (en) * | 2014-01-09 | 2015-07-09 | Heraeus Precious Metals North America Conshohocken Llc | Low-silver electroconductive paste |
KR101696968B1 (ko) * | 2014-01-09 | 2017-01-16 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
US20150206992A1 (en) | 2014-01-17 | 2015-07-23 | Heraeus Precious Metals North America Conshohocken Llc | Lead-tellurium inorganic reaction systems |
ES2694125T3 (es) * | 2014-02-26 | 2018-12-18 | Heraeus Precious Metals North America Conshohocken Llc | Un vidrio que comprende wolframio y plomo en una pasta de célula solar |
EP2913139B1 (en) * | 2014-02-26 | 2019-04-03 | Heraeus Precious Metals North America Conshohocken LLC | A glass comprising molybdenum and lead in a solar cell paste |
EP2913140B1 (en) * | 2014-02-26 | 2018-01-03 | Heraeus Precious Metals North America Conshohocken LLC | Molybdenum-containing glass frit for electroconductive paste composition |
KR101691694B1 (ko) * | 2014-03-18 | 2016-12-30 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
CN105097067B (zh) * | 2014-05-15 | 2017-11-14 | 三星Sdi株式会社 | 用于形成太阳电池电极的组合物及使用其制备的电极 |
JP5998178B2 (ja) * | 2014-06-05 | 2016-09-28 | 株式会社ノリタケカンパニーリミテド | 太陽電池受光面電極用ペースト、その製造方法、および太陽電池セルの製造方法 |
KR101768276B1 (ko) | 2014-08-20 | 2017-08-16 | 삼성에스디아이 주식회사 | 태양전지 |
DE102014014322B4 (de) | 2014-10-01 | 2017-11-23 | Ferro Gmbh | Tellurat-Fügeglas mit Verarbeitungstemperaturen ≦ 400 °C |
KR20160057583A (ko) * | 2014-11-13 | 2016-05-24 | 삼성에스디아이 주식회사 | 태양전지 전극용 페이스트 및 이로부터 제조된 전극 |
TWI521548B (zh) * | 2014-12-08 | 2016-02-11 | 碩禾電子材料股份有限公司 | 一種含無鉛玻璃熔塊之導電漿(四) |
TWI521545B (zh) * | 2014-12-08 | 2016-02-11 | 碩禾電子材料股份有限公司 | 一種含無鉛玻璃熔塊之導電漿(二) |
TWI576863B (zh) * | 2014-12-08 | 2017-04-01 | 碩禾電子材料股份有限公司 | 一種含無鉛玻璃熔塊之導電漿(一) |
TWI591652B (zh) * | 2014-12-08 | 2017-07-11 | 碩禾電子材料股份有限公司 | 一種含無鉛玻璃熔塊之導電漿(五) |
TWI505294B (zh) * | 2014-12-08 | 2015-10-21 | Giga Solar Materials Corp | 一種含無鉛玻璃熔塊之導電漿(六) |
TWI521546B (zh) * | 2014-12-08 | 2016-02-11 | 碩禾電子材料股份有限公司 | 一種含無鉛玻璃熔塊之導電漿(三) |
JP6531421B2 (ja) * | 2015-02-19 | 2019-06-19 | セントラル硝子株式会社 | Bi2O3−TeO2−SiO2−WO3−RO系ガラス |
WO2016147867A1 (ja) * | 2015-03-13 | 2016-09-22 | 昭栄化学工業株式会社 | 太陽電池電極形成用導電性ペースト |
KR101976661B1 (ko) * | 2015-04-28 | 2019-05-09 | 삼성에스디아이 주식회사 | 전극 형성용 조성물 및 이로부터 제조된 전극과 태양전지 |
WO2016193209A1 (en) * | 2015-06-02 | 2016-12-08 | Basf Se | Conductive paste and process for forming an electrode on a p-type emitter on an n-type base semiconductor substrate |
JP6580383B2 (ja) | 2015-06-17 | 2019-09-25 | ナミックス株式会社 | 導電性ペースト、太陽電池及び太陽電池の製造方法 |
CN106504814B (zh) * | 2015-09-06 | 2017-10-03 | 上海匡宇科技股份有限公司 | 玻璃粉、正银浆料及其制备方法 |
JP6236557B1 (ja) * | 2016-03-18 | 2017-11-22 | Dowaエレクトロニクス株式会社 | 銀テルル被覆ガラス粉およびその製造方法、ならびに導電性ペーストおよびその製造方法 |
WO2017158865A1 (ja) * | 2016-03-18 | 2017-09-21 | Dowaエレクトロニクス株式会社 | 銀テルル被覆ガラス粉およびその製造方法、ならびに導電性ペーストおよびその製造方法 |
WO2017159762A1 (ja) * | 2016-03-18 | 2017-09-21 | Dowaエレクトロニクス株式会社 | 銀テルル被覆ガラス粉およびその製造方法、ならびに導電性ペーストおよびその製造方法 |
DE102016109414A1 (de) | 2016-05-23 | 2017-11-23 | Ferro Gmbh | Niedertemperatur-Telluritglasmischungen für Vakuumverdichtung bei Temperaturen ≤450 °C |
JP6246877B1 (ja) | 2016-09-08 | 2017-12-13 | Dowaエレクトロニクス株式会社 | 導電性ペーストおよびその製造方法、ならびに太陽電池の製造方法 |
EP3333901B1 (en) * | 2016-10-05 | 2020-12-30 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing a high photoelectric conversion efficiency solar cell |
KR20180046809A (ko) * | 2016-10-28 | 2018-05-09 | 삼성에스디아이 주식회사 | 태양전지용 핑거 전극의 제조방법 |
TWI745562B (zh) | 2017-04-18 | 2021-11-11 | 美商太陽帕斯特有限責任公司 | 導電糊料組成物及用其製成的半導體裝置 |
KR20190005464A (ko) * | 2017-07-06 | 2019-01-16 | 삼성에스디아이 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
KR20190005463A (ko) * | 2017-07-06 | 2019-01-16 | 삼성에스디아이 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
US10804003B2 (en) | 2017-10-03 | 2020-10-13 | Shoei Chemical Inc. | Conductive paste for forming solar cell electrode |
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CN108492910A (zh) * | 2018-03-15 | 2018-09-04 | 山东建邦胶体材料有限公司 | 一种含有低熔点盐的晶硅太阳能电池浆料制备方法 |
JP2020040848A (ja) * | 2018-09-07 | 2020-03-19 | 日本電気硝子株式会社 | ガラス組成物及び封着材料 |
KR20200075682A (ko) * | 2018-12-18 | 2020-06-26 | 삼성에스디아이 주식회사 | Dsw 기반의 태양전지 전극 형성용 조성물 및 이로부터 제조된 dsw 기반의 태양전지 전극 |
JP7172650B2 (ja) * | 2019-01-25 | 2022-11-16 | 日本電気硝子株式会社 | ガラス粉末及びそれを用いた封着材料 |
US11508862B2 (en) | 2019-05-29 | 2022-11-22 | Changzhou Fusion New Material Co., Ltd. | Thick-film conductive paste, and their use in the manufacture of solar cells |
CN110143760A (zh) * | 2019-06-20 | 2019-08-20 | 苏州晶银新材料股份有限公司 | 一种玻璃粉组合物及含有其的银浆和电池 |
CN114409262B (zh) * | 2022-02-09 | 2023-05-16 | 广州市儒兴科技股份有限公司 | 一种导电玻璃粉及其制备方法、导电浆料及其制备方法与应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4945071A (en) * | 1989-04-19 | 1990-07-31 | National Starch And Chemical Investment Holding Company | Low softening point metallic oxide glasses suitable for use in electronic applications |
US5066621A (en) * | 1990-06-21 | 1991-11-19 | Johnson Matthey Inc. | Sealing glass composition and electrically conductive formulation containing same |
US6071437A (en) * | 1998-02-26 | 2000-06-06 | Murata Manufacturing Co., Ltd. | Electrically conductive composition for a solar cell |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62128946A (ja) | 1985-11-26 | 1987-06-11 | Hoya Corp | テルライトガラス |
JPH04270140A (ja) * | 1990-06-21 | 1992-09-25 | Johnson Matthey Inc | シーリングガラス組成物および導電性成分を含む同組成物 |
GB9015072D0 (en) * | 1990-07-09 | 1990-08-29 | Cookson Group Plc | Glass composition |
US5240884A (en) * | 1991-09-05 | 1993-08-31 | Johnson Matthey, Inc. | Silver-glass die attach paste |
JPH05128910A (ja) | 1991-11-07 | 1993-05-25 | Sumitomo Metal Mining Co Ltd | 導体ペースト |
US5188990A (en) * | 1991-11-21 | 1993-02-23 | Vlsi Packaging Materials | Low temperature sealing glass compositions |
JP3209089B2 (ja) | 1996-05-09 | 2001-09-17 | 昭栄化学工業株式会社 | 導電性ペースト |
JPH1029834A (ja) * | 1996-07-16 | 1998-02-03 | Asahi Glass Co Ltd | 無アルカリガラス組成物 |
JP3760361B2 (ja) | 1997-03-24 | 2006-03-29 | 株式会社村田製作所 | 太陽電池用導電性組成物 |
JP3707715B2 (ja) | 1998-01-30 | 2005-10-19 | シャープ株式会社 | 導電性ペースト |
JP4153628B2 (ja) | 1999-09-27 | 2008-09-24 | ナミックス株式会社 | 導電性組成物 |
JP2001118425A (ja) | 1999-10-21 | 2001-04-27 | Murata Mfg Co Ltd | 導電性ペースト |
JP2001284754A (ja) * | 2000-03-30 | 2001-10-12 | Kyocera Corp | ガラスセラミック回路基板 |
JP2004207493A (ja) | 2002-12-25 | 2004-07-22 | Mitsubishi Electric Corp | 半導体装置、その製造方法および太陽電池 |
JP4299021B2 (ja) | 2003-02-19 | 2009-07-22 | ヤマト電子株式会社 | 封着加工材及び封着加工用ペースト |
JP4482873B2 (ja) * | 2003-06-06 | 2010-06-16 | 昭栄化学工業株式会社 | 導電性ペースト、回路基板、太陽電池、及びチップ型セラミック電子部品 |
US7556748B2 (en) * | 2005-04-14 | 2009-07-07 | E. I. Du Pont De Nemours And Company | Method of manufacture of semiconductor device and conductive compositions used therein |
JP5041323B2 (ja) | 2005-05-09 | 2012-10-03 | 日本電気硝子株式会社 | 粉末材料及びペースト材料 |
US8093491B2 (en) | 2005-06-03 | 2012-01-10 | Ferro Corporation | Lead free solar cell contacts |
KR100772501B1 (ko) | 2005-06-30 | 2007-11-01 | 한국전자통신연구원 | 텔루라이트 유리 조성물, 이를 이용한 광도파로 및광증폭기 |
JP4556886B2 (ja) | 2006-03-09 | 2010-10-06 | 昭栄化学工業株式会社 | 導電性ペースト及び太陽電池素子 |
JP5528653B2 (ja) | 2006-08-09 | 2014-06-25 | 信越半導体株式会社 | 半導体基板並びに電極の形成方法及び太陽電池の製造方法 |
CN101164943A (zh) | 2006-10-19 | 2008-04-23 | 北京印刷学院 | 一种用作电子浆料组成中粘接相的无铅碲酸盐低熔玻璃 |
JP2008147154A (ja) | 2006-11-17 | 2008-06-26 | Sumitomo Chemical Co Ltd | 光電気化学電池 |
JP5127207B2 (ja) | 2006-11-28 | 2013-01-23 | 京セラ株式会社 | 太陽電池素子、及びそれを用いた太陽電池モジュール |
JP4885781B2 (ja) | 2007-03-30 | 2012-02-29 | 日立粉末冶金株式会社 | 導電性ペースト |
US8383011B2 (en) | 2008-01-30 | 2013-02-26 | Basf Se | Conductive inks with metallo-organic modifiers |
US7736546B2 (en) * | 2008-01-30 | 2010-06-15 | Basf Se | Glass frits |
JP5525714B2 (ja) * | 2008-02-08 | 2014-06-18 | 日立粉末冶金株式会社 | ガラス組成物 |
JP2009194121A (ja) | 2008-02-14 | 2009-08-27 | Namics Corp | 結晶系シリコン太陽電池電極形成用導電性ペースト |
KR101135337B1 (ko) | 2008-08-07 | 2012-04-17 | 교토 에렉스 가부시키가이샤 | 태양전지소자의 전극형성용 도전성 페이스트, 태양전지소자 및 그 태양전지소자의 제조방법 |
US20100037941A1 (en) * | 2008-08-13 | 2010-02-18 | E. I. Du Pont De Nemours And Company | Compositions and processes for forming photovoltaic devices |
JP5414409B2 (ja) * | 2009-01-16 | 2014-02-12 | 日立粉末冶金株式会社 | 低融点ガラス組成物、それを用いた低温封着材料及び電子部品 |
JP5559510B2 (ja) * | 2009-10-28 | 2014-07-23 | 昭栄化学工業株式会社 | 太陽電池素子及びその製造方法 |
-
2009
- 2009-10-28 JP JP2009247220A patent/JP5559509B2/ja active Active
-
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- 2010-10-20 EP EP17189214.4A patent/EP3288040A1/en not_active Withdrawn
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- 2010-10-20 EP EP10188127.4A patent/EP2317523B1/en active Active
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- 2010-10-27 KR KR1020100105335A patent/KR101226861B1/ko active IP Right Grant
- 2010-10-27 TW TW099136640A patent/TWI432539B/zh active
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-
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- 2017-08-24 US US15/685,756 patent/US10347787B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4945071A (en) * | 1989-04-19 | 1990-07-31 | National Starch And Chemical Investment Holding Company | Low softening point metallic oxide glasses suitable for use in electronic applications |
US5066621A (en) * | 1990-06-21 | 1991-11-19 | Johnson Matthey Inc. | Sealing glass composition and electrically conductive formulation containing same |
US6071437A (en) * | 1998-02-26 | 2000-06-06 | Murata Manufacturing Co., Ltd. | Electrically conductive composition for a solar cell |
Non-Patent Citations (1)
Title |
---|
JP平5-128910A 1993.05.25 |
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JP2011096747A (ja) | 2011-05-12 |
CA2718204A1 (en) | 2011-04-28 |
TWI432539B (zh) | 2014-04-01 |
US8551368B2 (en) | 2013-10-08 |
US20110095240A1 (en) | 2011-04-28 |
US10347787B2 (en) | 2019-07-09 |
CN103730538B (zh) | 2017-11-14 |
US20140004649A1 (en) | 2014-01-02 |
CN103730538A (zh) | 2014-04-16 |
KR101226861B1 (ko) | 2013-01-25 |
TW201120163A (en) | 2011-06-16 |
CN102081986A (zh) | 2011-06-01 |
EP2317523B1 (en) | 2017-12-20 |
KR20110046358A (ko) | 2011-05-04 |
US20170352773A1 (en) | 2017-12-07 |
JP5559509B2 (ja) | 2014-07-23 |
CA2718204C (en) | 2014-06-03 |
EP3288040A1 (en) | 2018-02-28 |
EP2317523A1 (en) | 2011-05-04 |
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