CN102004512B - 降压电路 - Google Patents

降压电路 Download PDF

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Publication number
CN102004512B
CN102004512B CN201010243284.9A CN201010243284A CN102004512B CN 102004512 B CN102004512 B CN 102004512B CN 201010243284 A CN201010243284 A CN 201010243284A CN 102004512 B CN102004512 B CN 102004512B
Authority
CN
China
Prior art keywords
voltage
parts
power source
nmos pass
pass transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201010243284.9A
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English (en)
Chinese (zh)
Other versions
CN102004512A (zh
Inventor
神保敏且
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of CN102004512A publication Critical patent/CN102004512A/zh
Application granted granted Critical
Publication of CN102004512B publication Critical patent/CN102004512B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Control Of Electrical Variables (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN201010243284.9A 2009-08-28 2010-07-30 降压电路 Expired - Fee Related CN102004512B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009197541A JP5361614B2 (ja) 2009-08-28 2009-08-28 降圧回路
JP2009-197541 2009-08-28

Publications (2)

Publication Number Publication Date
CN102004512A CN102004512A (zh) 2011-04-06
CN102004512B true CN102004512B (zh) 2015-01-28

Family

ID=43623875

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010243284.9A Expired - Fee Related CN102004512B (zh) 2009-08-28 2010-07-30 降压电路

Country Status (3)

Country Link
US (2) US8258859B2 (OSRAM)
JP (1) JP5361614B2 (OSRAM)
CN (1) CN102004512B (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5361614B2 (ja) * 2009-08-28 2013-12-04 ルネサスエレクトロニクス株式会社 降圧回路
EP2372485B1 (en) * 2010-04-01 2014-03-19 ST-Ericsson SA Voltage regulator
US20110298499A1 (en) * 2010-06-04 2011-12-08 Samsung Electronics Co., Ltd. Internal voltage generator and integrated circuit device including the same
US20140145695A1 (en) * 2012-11-26 2014-05-29 Nxp B.V. Startup control circuit in voltage regulators and related circuits
EP3311235B1 (en) 2015-06-18 2020-12-02 TDK Corporation Low-dropout voltage regulator apparatus
KR20170003025A (ko) * 2015-06-30 2017-01-09 에스케이하이닉스 주식회사 내부전압 생성회로
CN112421952B (zh) * 2020-11-25 2025-03-14 北京奕斯伟计算技术股份有限公司 电压生成模组和电源管理芯片
JP7536719B2 (ja) * 2021-07-15 2024-08-20 株式会社東芝 定電圧回路

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CN101470454A (zh) * 2007-12-27 2009-07-01 恩益禧电子股份有限公司 降压电路、半导体器件以及降压电路控制方法

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JP2005322152A (ja) * 2004-05-11 2005-11-17 Toshiba Corp 基準電圧回路
JP4354360B2 (ja) * 2004-07-26 2009-10-28 Ｏｋｉセミコンダクタ株式会社 降圧電源装置
EP1635239A1 (en) * 2004-09-14 2006-03-15 Dialog Semiconductor GmbH Adaptive biasing concept for current mode voltage regulators
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KR100780209B1 (ko) * 2006-05-26 2007-11-27 삼성전기주식회사 공급전압 변환 장치
EP1865397B1 (en) * 2006-06-05 2012-11-21 St Microelectronics S.A. Low drop-out voltage regulator
US8026703B1 (en) * 2006-12-08 2011-09-27 Cypress Semiconductor Corporation Voltage regulator and method having reduced wakeup-time and increased power efficiency
US7982448B1 (en) * 2006-12-22 2011-07-19 Cypress Semiconductor Corporation Circuit and method for reducing overshoots in adaptively biased voltage regulators
US7567119B2 (en) * 2007-01-10 2009-07-28 Standard Microsystems Corporation Current limiting protection circuit
US7723968B2 (en) * 2007-03-06 2010-05-25 Freescale Semiconductor, Inc. Technique for improving efficiency of a linear voltage regulator
JP5008472B2 (ja) * 2007-06-21 2012-08-22 セイコーインスツル株式会社 ボルテージレギュレータ
JP2009053783A (ja) * 2007-08-24 2009-03-12 Ricoh Co Ltd オーバーシュート抑制回路および該オーバーシュート抑制回路を用いた電圧レギュレータならびに電子機器
JP4937865B2 (ja) * 2007-09-11 2012-05-23 株式会社リコー 定電圧回路
JP5014194B2 (ja) * 2008-02-25 2012-08-29 セイコーインスツル株式会社 ボルテージレギュレータ
US20090224737A1 (en) * 2008-03-07 2009-09-10 Mediatek Inc. Voltage regulator with local feedback loop using control currents for compensating load transients
EP2151732B1 (en) * 2008-08-08 2012-10-17 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Stable low dropout voltage regulator
TWI379182B (en) * 2008-10-13 2012-12-11 Holtek Semiconductor Inc Voltage regulator having active foldback current limiting circuit
JP5361614B2 (ja) * 2009-08-28 2013-12-04 ルネサスエレクトロニクス株式会社 降圧回路
US8289009B1 (en) * 2009-11-09 2012-10-16 Texas Instruments Incorporated Low dropout (LDO) regulator with ultra-low quiescent current
JP5527056B2 (ja) * 2010-07-05 2014-06-18 ミツミ電機株式会社 差動増幅回路およびシリーズレギュレータ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6642791B1 (en) * 2002-08-09 2003-11-04 Lsi Logic Corporation Self-biased amplifier circuit and method for self-basing amplifier circuit
CN101470454A (zh) * 2007-12-27 2009-07-01 恩益禧电子股份有限公司 降压电路、半导体器件以及降压电路控制方法

Also Published As

Publication number Publication date
CN102004512A (zh) 2011-04-06
US8570098B2 (en) 2013-10-29
US8258859B2 (en) 2012-09-04
US20120293245A1 (en) 2012-11-22
JP2011048709A (ja) 2011-03-10
US20110050186A1 (en) 2011-03-03
JP5361614B2 (ja) 2013-12-04

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP02 Change in the address of a patent holder

Address after: Tokyo, Japan

Patentee after: Renesas Electronics Corporation

Address before: Kanagawa

Patentee before: Renesas Electronics Corporation

CP02 Change in the address of a patent holder
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150128

Termination date: 20180730

CF01 Termination of patent right due to non-payment of annual fee