CN101989557B - 半导体装置的制造方法以及半导体装置 - Google Patents

半导体装置的制造方法以及半导体装置 Download PDF

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Publication number
CN101989557B
CN101989557B CN2010102435438A CN201010243543A CN101989557B CN 101989557 B CN101989557 B CN 101989557B CN 2010102435438 A CN2010102435438 A CN 2010102435438A CN 201010243543 A CN201010243543 A CN 201010243543A CN 101989557 B CN101989557 B CN 101989557B
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layer
opening
conductive layer
semiconductor device
insulating barrier
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CN101989557A (zh
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山下创一
右田达夫
饭岛匡
宫田雅弘
内田雅之
栂嵜隆
江泽弘和
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Japanese Businessman Panjaya Co ltd
Kioxia Corp
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Toshiba Corp
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Abstract

本发明一般涉及半导体装置的制造方法以及半导体装置。根据本发明，在具有作为第1导电层的电极端子的基板上使感光性树脂膜改性，形成具有到达电极端子的第1开口和第2开口的绝缘层。接着，在包含第1开口内的绝缘层上形成与电极端子电连接的第2导电层，在第2导电层上形成第3导电层，该第3导电层与第1导电层的氧化还原电位之差小于第1导电层与第2导电层的氧化还原电位之差。接着，使感光性树脂膜改性，形成具有到达第3导电层的第3开口、和经由第2开口到达电极端子的第4开口的绝缘层，并形成与第3导电层电连接的凸块。

Description

半导体装置的制造方法以及半导体装置
本申 请享有2009年7月30日申请的日本专利申请号为2009-178179和2010年6月23日申请的日本专利申请号为2010-143085的优先权的利益，这两个日本专利申请的全部内容都被引用在本申请中。 
技术领域
本发明一般涉及半导体装置的制造方法以及半导体装置。 
背景技术
近年来，为了实现半导体设备的高集成化和高功能化，要求提高设备的工作速度和储存器的大容量化。最近，代替芯片的eDRAM(嵌入式动态存取存储器：Embedded Dynamic Random Access Memory)，还开发了逻辑芯片和大容量DRAM层叠而成的COC(叠层芯片：Chip on Chip)设备。 
在COC设备中，一个芯片上有时要求有与其它的芯片连接用的端子(以下称作第1端子)和与外部连接用的端子(以下称作第2端子)这两种端子。此外，第1端子和第2端子要求以各自适合的不同的形态形成。即，第1端子要求形成凸块以获得高度。而第2端子要求利用芯片上形成的电极垫。在形成上述的两种端子时，例如在日本特开2008-84962号公报中是利用例如再布线技术来形成。 
其中，在日本特开2008-84962号公报中，将再配置布线的前端侧布图(呈图案形成，patterning)为垫形状，使其形成连接用端子部。而且，特别是通过对该连接用端子部的表面实施镍(Ni)、金(Au)的镀覆，使得该连接用端子部的电接触性或引线接合时的接合性提高。即，在日本特开2008-84962号公报中，公开了将镍(Ni)/金(Au)的层叠结构仅用于第2端子的表层。但是，对于选择性地仅在第2端子上形成该结构的具体的工艺却并没有公开。 
发明内容
本发明的目的在于提供能够以简便的工艺形成形态不同的2种端子的半导体装置的制造方法以及半导体装置。 
根据本发明的一个方面，提供一种半导体装置的制造方法，其是在设置有半导体元件的半导体基板上形成形态互不相同的2种连接端子的半导体装置的制造方法，其特征在于， 
在设置有所述半导体元件用的由第1导电层构成的电极端子的所述半导体基板的主面侧形成第1感光性树脂膜并进行曝光，使用强碱水溶液进行显影，从而形成到达所述电极端子的第1开口和第2开口， 
将所述第1感光性树脂膜进行烘烤，从而使所述第1感光性树脂膜变成第1绝缘层， 
在包含所述第1开口内的所述第1绝缘层上形成与所述电极端子电连接的第2导电层， 
在所述第2导电层上形成第3导电层，所述第3导电层与所述第1导电层的氧化还原电位之差小于所述第1导电层与所述第2导电层的氧化还原电位之差， 
在所述半导体基板的主面侧形成第2感光性树脂膜并进行曝光，使用强碱水溶液进行显影，从而形成到达所述第3导电层的第3开口、和经由所述第2开口到达所述电极端子的第4开口， 
将所述第2感光性树脂膜进行烘烤，从而使所述第2感光性树脂膜变成第2绝缘层，并形成由所述电极端子从所述第2开口和第4开口露出而得到的第1连接端子， 
形成与从所述第3开口露出的所述第3导电层电连接的凸块，从而形成第2连接端子。 
根据本发明的另一个方面，提供一种半导体装置的制造方法，其是在设置有半导体元件的半导体基板上形成形态互不相同的2种连接端子的半导体装置的制造方法，其特征在于， 
在设置有所述半导体元件用的由铝层构成的电极端子的所述半导体基板的主面侧形成第1感光性树脂膜并进行曝光，使用强碱水溶液进行显影，从而形成到达所述电极端子的第1开口和第2开口， 
将所述第1感光性树脂膜进行烘烤，从而使所述第1感光性树脂膜变 成第1绝缘层， 
在包含所述第1开口和第2开口内的所述半导体基板的主面侧形成通电层， 
在所述通电层上形成掩模层，该掩模层在包含所述第1开口的区域上具有规定的图案开口， 
在所述图案开口内，通过使用了所述通电层的电解镀来形成由铜层构成的再配置布线层，进而通过使用了所述通电层的电解镀来在所述再配置布线层的最表层形成由镍层构成的导电性保护层， 
除去所述掩模层，进而除去未被所述再配置布线层覆盖的所述通电层， 
除去所述掩模层和所述通电层后，在所述半导体基板的主面侧形成第2感光性树脂膜并曝光，使用强碱水溶液进行显影，从而形成到达所述导电性保护层的第3开口、和经由所述第2开口到达所述电极端子的第4开口， 
将所述第2感光性树脂膜进行烘烤，从而使所述第2感光性树脂膜变成第2绝缘层，并形成由所述电极端子从所述第2开口和第4开口露出而得到的第1连接端子， 
形成与从所述第3开口露出的所述导电性保护层电连接的凸块，从而形成第2连接端子。 
根据本发明的又一个方面，提供一种半导体装置，其特征在于，其具有： 
半导体基板，该半导体基板上设置有半导体元件，同时在表面上设置有所述半导体元件用的由第1导电层构成的电极端子； 
第1绝缘层，其形成于所述半导体基板的设置有所述电极端子的主面上，在所述电极端子上的区域具有到达所述电极端子的第1开口和第2开口，并且该第1绝缘层是由感光性树脂变成的； 
再配置布线，其按照至少将所述第1开口内填埋的方式设置，并由与所述电极端子电连接的第2导电层构成； 
导电性保护层，其形成于所述再配置布线的最表层，由第3导电层构成，所述第3导电层与所述第1导电层的氧化还原电位之差小于所述第1导电层与所述第2导电层的氧化还原电位之差； 
第2绝缘层，其形成于所述第1绝缘层上和所述导电性保护层上，具 有到达所述导电性保护层的第3开口、和经由所述第2开口到达所述电极端子的第4开口，并且该第2绝缘层是由感光性树脂变成的；和 
凸块，其至少填埋所述第3开口并形成于所述导电性保护层上。 
根据本发明，实现了下述的效果：能够在半导体装置中以简便的工艺形成形态不同的2种端子。 
附图说明
图1A～图1N是说明第1实施形态的半导体装置的制造方法的截面图。 
图2是说明比较例的半导体装置的制造方法的截面图。 
图3是示意地说明第1实施形态的芯片层叠型半导体装置的构成的截面图。 
图4A～图4C是示意地说明第2实施形态的半导体装置的制造方法的截面图。 
具体实施方式
根据本发明，在具有作为第1导电层的电极端子的基板上使感光性树脂膜改性，形成具有到达电极端子的第1开口和第2开口的绝缘层。接着，在包含第1开口内的绝缘层上形成与电极端子电连接的第2导电层，在第2导电层上形成第3导电层，该第3导电层与第1导电层的氧化还原电位之差小于第1导电层与第2导电层的氧化还原电位之差。接着，使感光性树脂膜改性，形成具有到达第3导电层的第3开口、和经由第2开口到达电极端子的第4开口的绝缘层，并形成与第3导电层电连接的凸块。 
以下，参照附图，对实施形态的半导体装置的制造方法以及半导体装置进行详细说明。此外，本发明并不被这些实施形态所限定。另外，在以下所示的附图中，为了便于理解，各构件的尺寸缩小比例有时与实际情况不同。 
(第1实施形态) 
图1A～图1N是示意地说明第1实施形态的半导体装置的制造方法的截面图。首先，对本实施形态中使用的半导体晶片(基板)进行说明。如 图1所示，在硅等半导体上形成有LSI(大规模集成电路、未图示出来)的被称作半导体基板W1(以下仅称作“晶片W1”)的表面上，形成有作为LSI的电极端子的电极垫11。作为构成电极垫11的材料，可以列举出例如铝(Al)等。本实施形态中，是对电极垫11由铝(Al)构成的情况进行说明，但作为其中的铝(Al)，当然也可以是铝(Al)-铜(Cu)、铝(Al)-铜(Cu)-硅(Si)等通常的半导体装置中使用的以铝(Al)为主成分的铝(Al)合金。使用形成有上述的电极垫11的晶片W1进行以下的工序。 
首先，如图1B所示，在晶片W1上的整面上形成钝化膜12，该钝化膜12在电极垫11上的规定位置具有开口13a、13b。作为构成钝化膜12的材料，可以列举出例如氮化硅(SiN)等。本实施形态中，是对钝化膜12由氮化硅(SiN)构成的情况进行说明。 
下面对钝化膜12的形成方法进行说明。首先，在晶片W1的整面上形成将成为钝化膜12的氮化硅膜(SiN膜)。然后，在氮化硅膜(SiN膜)上形成在电极垫11上的规定位置(对应于开口13a、13b的位置)具有开口的抗蚀剂图案，将该抗蚀剂图案用作掩模，通过蚀刻技术形成在电极垫11上的规定位置具有开口13a、13b的钝化膜12，然后除去抗蚀剂图案。 
接着，如图1C所示，在晶片W1上的整面上形成第1绝缘层14，该第1绝缘层14在电极垫11上的规定位置具有开口13a、13b。作为构成第1绝缘层14的材料，使用例如对聚酰亚胺树脂或环氧树脂、硅酮树脂赋予了感光性而得到的树脂等感光性树脂。本实施形态中，是对第1绝缘层14由感光性聚酰亚胺构成的情况进行说明。 
下面对第1绝缘层14的形成方法进行说明。首先，在晶片W1的整面上形成感光性聚酰亚胺膜。然后，使用光刻法技术将电极垫11上的规定位置(对应于开口13a、13b的位置)进行曝光。然后使用例如强碱水溶液作为显影液进行显影，从而在电极垫11上的规定位置形成到达该电极垫11的开口13a、13b。 
然后，通过进行烘烤使感光性聚酰亚胺膜变成第1绝缘层14。由此，形成在电极垫11上的规定位置具有到达该电极垫11的开口13a、13b的第1绝缘层14。其中，第1绝缘层14通过实施烘烤而成为不能进一步布图的状态。此外，感光性聚酰亚胺膜也可以使用正型、负型中的任一种。 
接着，如图1D所示，在晶片W1的整面上，使用溅射法、CVD法、ALD法等形成凸块下部金属(Under Bump Metal、以下称作UBM)层15。UBM层15在作为后述的工序即铜的电解镀工序中起着通电层的作用。其中，钝化膜12和第1绝缘层14在电极垫11上的一部分处形成了到达该电极垫11的开口13a、13b。因此，UBM层15在电极垫11上的一部分处与电极垫11接触。 
作为构成UBM层15的材料，可以列举出例如铜(Cu)系材料。此外，UBM层15也可以是多层结构，本实施形态中，是对UBM层15由钛(Ti)/铜(Cu)的层叠结构构成的情况进行说明。其中，UBM层15中的钛(Ti)被用于在抑制电极垫11和后述的再配置布线层17的扩散，同时提高它们的附着性。 
形成UBM层15后，通过抗蚀剂涂布、曝光和显影的通常的光刻法工序，如图1D所示那样在UBM层15上形成具有开口13c的作为掩模层的抗蚀剂图案16。将该开口13c是再配置布线和所期望的电路的位置，其在包含开口13a的位置以布线图案状形成。即，抗蚀剂图案16是按照具有用于形成再配置布线和所期望的电路的规定的图案开口的方式来形成。 
在UBM层15上形成抗蚀剂图案16后，通过电解镀法使例如铜(Cu)析出(沉积)于开口13c内的UBM层15上，如图1E所示那样在开口13c内形成由铜(Cu)构成的再配置布线层17。该再配置布线层17经由UBM层15与电极垫11电连接。接着，如图1E所示，通过电解镀法使例如镍(Ni)析出(沉积)于再配置布线层17上作为导电性保护层18，从而在铜(Cu)构成的再配置布线层17上的最表层上形成镍(Ni)构成的导电性保护层18。 
然后，如图1F所示，使用抗蚀剂剥离液等药液除去抗蚀剂图案16。然后，如图1G所示，将导电性保护层18和再配置布线层17作为蚀刻掩模进行湿式蚀刻，除去被再配置布线层17和导电性保护层18覆盖的部分以外的UBM层15。该工序中除去UBM层15的理由是，因为在后续的工序中，要将第1绝缘层14上形成的感光性树脂进行改性，然后直接与第1绝缘层14一起作为绝缘层使用。即，如果不在此时预先除去不需要的UBM层15，则在第1绝缘层14上形成感光性树脂后，就无法除去第1绝缘层14和感光性树脂之间的UBM层15。 
接着，如图1H所示，在晶片W1的整面上形成第2绝缘层19，该第2绝缘层19在导电性保护层18上的规定位置具有开口13d，并在电极垫11上的规定位置(与开口13b相同的位置)具有开口13e。即，第2绝缘层19以具有开口13d和开口13e的状态形成于第1绝缘层14上和导电性保护层18上。 
作为构成第2绝缘层19的材料，使用例如对聚酰亚胺树脂或环氧树脂、硅酮树脂赋予了感光性而得到的树脂等感光性树脂。本实施形态中，是对第2绝缘层19由感光性聚酰亚胺构成的情况进行说明。此外，其中，第1绝缘层14和第2绝缘层19使用相同的材料，但第1绝缘层14和第2绝缘层19也可以使用不同的材料。 
下面对第2绝缘层19的形成方法进行说明。首先，在晶片W1的整面上形成感光性聚酰亚胺膜。接着，使用光刻法技术将导电性保护层18上的规定位置和电极垫11上的规定位置(对应于开口13b的位置)进行曝光。然后使用例如强碱水溶液作为显影液进行显影，从而在导电性保护膜18上的规定位置形成到达该导电性保护膜18的开口13d。此外，通过进行显影，形成经由开口13b到达电极垫11的开口13e。 
然后，通过进行烘烤使感光性聚酰亚胺膜变成第2绝缘层19。由此，形成第2绝缘层19，该第2绝缘层19在将成为内部连接端子20的导电性保护层18上的规定位置具有到达该导电性保护膜18的开口13d，并在与外部连接端子21对应的位置具有经由开口13b到达电极垫11的开口13e。其中，第2绝缘层19通过实施烘烤而成为不能进一步布图的状态。此外，感光性聚酰亚胺膜也可以使用正型、负型中的任一种。 
其中的内部连接端子20是从第2绝缘层19露出导电性保护层18而形成的端子。在该内部连接端子20上将形成后述的钎焊凸块。另外，外部连接端子21是从第2绝缘层19和第1绝缘层14露出电极垫11而形成的端子。该外部连接端子21是用于与外部连接的引线接合用的接合垫，是被实施由金(Au)引线等进行的接合后用于进行来自半导体装置的外部的电源或信号等的供给的端子。 
其中，本实施形态中，在由镍(Ni)构成的导电性保护层18层叠于由铜(Cu)构成的再配置布线层17上的状态下，使用强碱水溶液作为显影液， 进行将成为第2绝缘层19的感光性聚酰亚胺膜的显影。即，显影时，在由铜(Cu)构成的再配置布线层17被由镍(Ni)构成的导电性保护层18覆盖而未露出、而导电性保护层18露出表面的状态下用强碱水溶液进行感光性聚酰亚胺膜的显影。 
另一方面，图2是示意地说明比较例的半导体装置的制造方法的截面图。图2中，表示出了在由铜(Cu)构成的再配置布线层17上未层叠由镍(Ni)构成的导电性保护层18，由铜(Cu)构成的再配置布线层17露出的状态。在该状态下，用强碱水溶液进行感光性聚酰亚胺膜的显影时，从开口13d露出的由铜(Cu)构成的再配置布线层17和从开口13e露出的由铝(Al)构成的电极垫11成为存在于强碱水溶液中的状态。即成为下述状态：离子化倾向不同且氧化还原电位大大不同的铜(Cu)和铝(Al)这两种不同金属(相当于阳极、阴极)存在于水溶液中。其中，铝(Al)的氧化还原电位为-1.676V，铜(Cu)的氧化还原电位为0.340V，两者间的氧化还原电位之差大致为2V。 
于是，在感光性聚酰亚胺膜的显影时，显影液中产生电池效果(电解)，由于铜(Cu)与铝(Al)的电位差而在显影液中产生氢气(H2)和氧气(O2)等气体。该气体在露出再配置布线层17和电极垫11的开口13d、13e的周边部产生。因此，有可能发生第1绝缘层14上的感光性聚酰亚胺膜因为该气体的发生而从第1绝缘层14上剥离的不利情况。这是例如在用由铜(Cu)系材料构成的通电层覆盖由铝(Al)构成的电极垫11上的状态下、于再配置布线层17上进行抗蚀剂涂布、曝光和显影以形成开口时不会发生的不利情况，该感光性聚酰亚胺膜的剥离状态在该感光性聚酰亚胺膜变成第2绝缘层19后仍保留存在，会导致半导体装置的可靠性下降。 
但是，本实施形态中，在由铜(Cu)构成的再配置布线层17上层叠有由镍(Ni)构成的导电性保护层18，在导电性保护层18的镍(Ni)和电极垫11的铝(Al)这两种不同金属(相当于阳极、阴极)存在于强碱水溶液的状态下进行感光性聚酰亚胺膜的显影。其中，铝(Al)的氧化还原电位为-1.676V，镍(Ni)的氧化还原电位为-0.257V，两者间的氧化还原电位之差大致为1.4V。即，强碱水溶液中存在的两种不同金属间的电位差与图2所示的构成的情况相比，大大降低。 
由此，显影液中存在的两种不同金属间的电位差所引起的感光性聚酰亚胺膜的显影时的电池效果(电解)被大幅抑制，氢气(H2)等气体的发生量大幅减少。由此，可以防止由该气体的发生引起感光性聚酰亚胺膜(第2绝缘层19)从第1绝缘层14等上剥离，防止半导体装置的可靠性下降。 
本实施形态中，导电性保护层18使用镍(Ni)。但是，用于导电性保护层18的材料不限于镍(Ni)。作为导电性保护层18，可以使用氧化还原电位与铝(Al)的氧化还原电位之差小于铝(Al)与铜(Cu)的氧化还原电位之差的金属材料。通过使用满足上述条件的金属材料作为导电性保护层18，使得显影液中存在的两种不同金属间的电位差所引起的感光性聚酰亚胺膜的显影时的电池效果(电解)与不设置导电性保护层18的情况相比被大幅抑制，氢气(H2)等气体的发生量大幅减少。由此，可以防止由该气体的发生引起第1绝缘层14上的感光性聚酰亚胺膜从第1绝缘层14等上剥离，防止半导体装置的可靠性下降。 
作为上述的金属材料，除了镍(Ni)以外，还可以列举出例如锰(Mn)、钽(Ta)、锌(Zn)、铬(Cr)、钴(Co)、锡(Sn)、铅(Pb)。 
另外，在日本特开2008-84962号公报所记载的半导体装置中，公开了在连接用端子部的表层设置了镍(Ni)/金(Au)的层叠结构的构成。但是，该构成中由于连接用端子部的表层有金(Au)，所以即使镍(Ni)处在金(Au)的下层，对于由上述的显影液中存在的两种不同金属间的电位差所引起的感光性聚酰亚胺膜的显影时的气体发生的抑制也没有意义。 
接着，如图1I所示，在晶片W1的整面上，使用溅射法、CVD法、ALD法等形成凸块下部金属(UBM)层22。UBM层22在后述的工序即钎焊凸块的镀覆工序中起着通电层的作用。其中，第2绝缘层19在导电性保护层18上的一部分处形成了到达该导电性保护层18的开口13d。因此，UBM层22在导电性保护层18上的一部分处与导电性保护层18接触。另外，第1绝缘层14和第2绝缘层19在电极垫11上的一部分处形成了开口13e，所以在电极垫11上的一部分处，UBM层22与电极垫11接触。 
作为构成UBM层22的材料，可以列举出例如钛(Ti)和钛钨(TiW)等Ti系材料等。本实施形态中，是对UBM层22由钛(Ti)膜构成的情况进行说明。此外，UBM层22也可以是多层结构。 
形成UBM层22后，通过抗蚀剂涂布、曝光和显影的通常的光刻法工序，如图1J所示那样在UBM层22上形成具有开口13f的作为掩模层的抗蚀剂图案23。该开口13f是形成钎焊凸块的位置，其在包含开口13d的位置形成。该开口13f用作形成钎焊凸块的开口部。 
在UBM层22上形成抗蚀剂图案23后，如图1K所示，通过镀覆法在开口13f内形成例如镍(Ni)膜作为钎焊凸块用的阻挡金属层24，然后分别通过镀覆法在开口13f内依次形成例如(Cu)膜25和锡(Sn)膜26作为钎焊凸块用的钎焊镀覆膜27。阻挡金属层24可抑制后述的钎焊凸块28中所含的锡(Sn)的扩散。 
然后，如图1L所示，使用抗蚀剂剥离液等药液除去抗蚀剂图案23。然后，如图1M所示，将钎焊镀覆膜27作为蚀刻掩模进行湿式蚀刻，除去被钎焊镀覆膜27覆盖的部分以外的UBM层22。 
然后，使用熔剂实施回流工序，使钎焊镀覆膜27熔融并凝固，从而圆滑地成型。此时，阻挡金属层24也可以熔解于钎焊镀覆膜27中。由此，如图1N所示，钎焊凸块28形成于再配置布线层17上(阻挡金属层24上)，得到形成有外部连接端子29的第1半导体芯片10。通过实施以上的工序，可以防止由在制造工序中的气体的发生引起第2绝缘层19从第1绝缘层14上剥离，制作可靠性优良的半导体装置。 
图3是示意地说明使用了本实施形态的半导体装置的芯片层叠型半导体装置(COC设备)的构成的截面图。图3中，示意地表示了使用COC方法将上述的第1半导体芯片10和作为其它电子部件的第2半导体芯片40进行芯片层叠而得到的芯片层叠型半导体装置的构成。第2半导体芯片40中，在将LSI(大规模集成电路、未图示出来)形成于例如硅等半导体上而得到的半导体基板W2的表面上，具有作为LSI的电极端子的电极垫41。电极垫41例如由铝(Al)构成。此外，作为与上述的第1半导体芯片10进行芯片层叠的其它电子部件，不限于半导体芯片，也可以是无源元件的芯片等。 
电极垫41在一部分连接区域为开口的状态下被绝缘层42覆盖，该连接区域成为外部连接端子。而且，如图3所示，钎焊凸块28经由阻挡金属层43与该外部连接端子连接，由此使第1半导体芯片10与第2半导体芯 片40电连接。作为阻挡金属层43，例如使用镍(Ni)膜。此外，在第1半导体芯片10与第2半导体芯片40之间，用密封树脂51密封。另外，第2半导体芯片40的外部连接端子也可以是具有钎焊凸块的构成。 
第1半导体芯片10与第2半导体芯片40之间的电源和信号等的供给是通过第1半导体芯片10上设置的再配置布线层17、钎焊凸块28、第2半导体芯片40上设置的电极垫41来进行。 
另外，对第1半导体芯片10上设置的外部连接端子21上实施由金(Au)引线等进行的接合(未图示出来)。于是，从半导体装置的外部向第1半导体芯片10进行的电源和信号等的供给可以通过外部连接端子21上连接的金(Au)引线等来进行。 
在上述的芯片层叠型半导体装置中，可以防止由第1半导体芯片10的制造工序中的气体的发生引起第2绝缘层19从第1绝缘层14上剥离，实现可靠性优良的芯片层叠型半导体装置。 
如上所述，本实施形态的半导体装置中，在由铜(Cu)构成的再配置布线层17上具有由镍(Ni)构成的导电性保护层18。因此，可以防止第2绝缘层19的形成时该第2绝缘层19从第1绝缘层14上剥离，实现可靠性优良的半导体装置。 
另外，如上所述，本实施形态的半导体装置的制造方法中，在由铜(Cu)构成的再配置布线层17上层叠由镍(Ni)构成的导电性保护层18。即，在将成为第2绝缘层19的感光性聚酰亚胺膜的显影时，显影液中存在的两种不同金属间的氧化还原电位之差小于电极垫11的铝(Al)与再配置布线层17的铜(Cu)的氧化还原电位之差。因此，显影液中存在的两种不同金属间的电位差所引起的电池效果(电解)被大幅抑制，在感光性聚酰亚胺膜的显影时的氢气(H2)和氧气(O2)等气体的发生量大幅减少。由此，可以防止由气体的发生引起成为第2绝缘层19的感光性聚酰亚胺膜从第1绝缘层14上剥离，可以制作可靠性优良的半导体装置。 
另外，上述的实施形态中，以第1半导体芯片10的电极垫11由铝(Al)构成，再配置布线层17由铜(Cu)构成的情况为例进行了说明，但本发明并不限定于该组合。即，第1半导体芯片10的电极垫11的构成材料和再配置布线层17的构成材料可以适当变更。而且，通过选择在再配置布线层 17上层叠的导电性保护层18的金属材料，使其与电极垫11的氧化还原电位之差较小，例如小于铝(Al)与铜(Cu)的氧化还原电位之差，则与上述同样，可以防止由制造工序中的气体的发生引起第2绝缘层19从第1绝缘层14上剥离，制作可靠性优良的半导体装置。 
(第2实施形态) 
第2实施形态是就第1实施形态的变形例参照图4A～图4C来进行说明。图4A～图4C是示意地说明第2实施形态的半导体装置的制造方法的截面图。首先，实施与第1实施形态中的图1A～图1G对应的工序，如图4A所示，在再配置布线层17上形成由镍(Ni)构成的导电性保护层18。 
接着，使用醇、丙酮、己烷、甲苯、乙基胺、乙腈、四氢呋喃(THF)、丙二醇单甲基醚(PGME)、丙二醇单甲基醚醋酸酯(PGMEA)、N-甲基-2-吡咯烷酮(NMP)、二甲基亚砜(DMSO)、N，N-二甲基甲酰胺(DMF)等有机溶液、铵系水溶液、钠系水溶液、钾系水溶液等碱溶液、或这些溶液的混合液之中的任一种对导电性保护层18的表面进行表面处理。用于表面处理的这些溶液也可以多种混合使用。 
通过进行该表面处理而在导电性保护层18的最表面形成氧化镍(II)(NiO)，导电性保护层18的最表面的氧化镍(II)(NiO)的含量增加。由此，如图4B所示，在再配置布线层17上形成2层结构的导电性保护层18’，该2层结构的导电性保护层18’从再配置布线层17侧开始具有以镍(Ni)为主成分的第1导电性保护层18a和氧化镍(II)(NiO)的含量比第1导电性保护层18a多并以氧化镍(II)(NiO)为主成分的第2导电性保护层18b。未进行表面处理的第1导电性保护层18a具有与导电性保护层18相同的成分构成。此外，主成分是指含量最多的成分。 
氧化镍(III)或氢氧化镍(Ni(OH)x)等成分与其它成分的键合状态不稳定。因此，从与保护再配置布线层17的第2绝缘层19的附着性的观点出发，在导电性保护层18的表面，这些成分为主成分是不优选的。另外，镍金属成分(金属单质)中不存在键合的各向异性。因此，镍金属成分(金属单质)处于不能与有机膜等键合的状态。所以，通过在镍金属成分(金属单质)上形成金属氧化物，可以造成与有机膜等的共价键，即造成容易 给出电子的状态，由此可以提高与有机膜等的附着性。 
另一方面，氧化镍(II)(NiO)与其它成分的键合状态稳定，而且与作为第2绝缘层19使用的树脂之间的附着性比镍金属成分(金属单质)高。 
因此，本实施形态中，在与第2绝缘层19的接合面上有意地形成以氧化镍(II)(NiO)为主成分的第2导电性保护层18b，提高第2绝缘层19与导电性保护层18’的附着性。即，通过将以稳定的氧化状态的成分即氧化镍(II)(NiO)为主成分的第2导电性保护层18b配置在导电性保护层的最表面，可以在导电性保护层18’与第2绝缘层19之间获得更高的附着性。作为此时的第2绝缘层19，可以使用例如对酚醛系树脂、聚酰亚胺树脂或环氧树脂、硅酮树脂赋予了感光性而得到的树脂等感光性树脂等。其中，使用酚醛系树脂作为第2绝缘层19时，可以获得显著的效果。 
另外，通过导电性保护层18的表面的自然氧化也可使镍金属成分(金属单质)氧化而形成氧化物(自然氧化膜)。但是，通过上述的表面处理来有意地形成氧化镍(II)(NiO)，则氧化镍(II)(NiO)与作为第2绝缘层19的有机膜等中所含的羟基(OH基)等的键合数大幅增加。因此，与最表层是自然氧化膜的情况相比，导电性保护层18’与第2绝缘层19的粘附力提高。 
导电性保护层18’的厚度例如为1nm～10μm，优选为1nm～5μm。当导电性保护层18’的厚度小于1nm时，尽管也取决于成膜方法等，但导电性保护层18’成为岛状，无法起到导电性保护层的作用。当导电性保护层18’的厚度大于10μm时，形成镀覆膜需要花费时间，对生产量有影响。因此，导电性保护层18’优选是连续膜并且尽量薄。 
形成导电性保护层18’后，实施与第1实施形态的图1H～图1N对应的工序。由此，如图4C所示，钎焊凸块28形成于再配置布线层17上(阻挡金属层24上)，得到形成有外部连接端子29的第1半导体芯片10’。第1半导体芯片10’与第1半导体芯片10的不同点是，具有导电性保护层18’代替导电性保护层18。通过实施以上的工序，可以防止由制造工序中的气体的发生引起第2绝缘层19从再配置布线层17上剥离，进而可以防止从第1绝缘层14上剥离，可以制作可靠性优良的半导体装置。 
另外，以上对由镍(Ni)形成导电性保护层18的情况进行了说明，但 作为导电性保护层18的金属材料，除了镍(Ni)以外，还可以列举出例如锰(Mn)、钽(Ta)、锌(Zn)、铬(Cr)、钴(Co)、锡(Sn)、铅(Pb)。此时，也对导电性保护层18的表面进行表面处理，使导电性保护层18的最表面的稳定的金属氧化物的成分的含量增加。由此，在再配置布线层17上形成2层结构的导电性保护层18’，该2层结构的导电性保护层18’具有以金属成分为主成分的第1导电性保护层18a和以金属氧化物为主成分的第2导电性保护层18b。 
另外，与第1实施形态同样，通过使用COC方法将第1半导体芯片10’和作为其它电子部件的第2半导体芯片40进行芯片层叠，从而可以构成与图3所示的芯片层叠型半导体装置同样的芯片层叠型半导体装置。这样的芯片层叠型半导体装置中，可以更可靠地防止由在第1半导体芯片10’的制造工序中的气体的发生引起第2绝缘层19从再配置布线层17上剥离，进而可以防止从第1绝缘层14上剥离，实现可靠性优良的芯片层叠型半导体装置。 
如上所述，本实施形态的半导体装置中，在由铜(Cu)构成的再配置布线层17上具有2层结构的导电性保护层18’，该2层结构的导电性保护层18’从再配置布线层17侧开始具有以镍(Ni)为主成分的第1导电性保护层18a和氧化镍(II)(NiO)的含量比第1导电性保护层18a多并以氧化镍(II)(NiO)为主成分的第2导电性保护层18b。因此，可以防止在第2绝缘层19的形成时该第2绝缘层19从再配置布线层17上剥离，而且可以防止第2绝缘层19从第1绝缘层14上剥离，实现可靠性更加优良的半导体装置。 
另外，如上所述，本实施形态的半导体装置的制造方法中，在由铜(Cu)构成的再配置布线层17上层叠2层结构的导电性保护层18’，该2层结构的导电性保护层18’具有以镍(Ni)为主成分的第1导电性保护层18a和氧化镍(II)(NiO)的含量比第1导电性保护层18a多并以氧化镍(II)(NiO)为主成分的第2导电性保护层18b。因此，与第1实施形态的情况同样，显影液中存在的两种不同金属间的电位差所引起的电池效果(电解)被大幅抑制，感光性聚酰亚胺膜的显影时的氢气(H2)和氧气(O2)等气体的发生量大幅减少。由此，可以防止由气体的发生引起将成为第2绝缘层19的 感光性聚酰亚胺膜从再配置布线层17上剥离，进而可以防止从第1绝缘层14上剥离，可以制作可靠性优良的半导体装置。 
另外，在导电性保护层18’的表层配置氧化镍(II)(NiO)的含量比第1导电性保护层18a多并以氧化镍(II)(NiO)为主成分的第2导电性保护层18b。由此，可以在导电性保护层18’与第2绝缘层19之间获得更高的附着性，可以更可靠地防止由气体的发生引起将成为第2绝缘层19的感光性聚酰亚胺膜从再配置布线层17上剥离，进而可以更可靠地防止从第1绝缘层14上剥离，可以制作可靠性优良的半导体装置。 
此外，本实施形态中也可以根据与第1实施形态的情况同样的宗旨，适当变更第1半导体芯片10’的电极垫11的构成材料和再配置布线层17的构成材料。 
进一步的效果或变形例可以由本领域技术人员容易地导出。因此，本发明的更宽泛的形态并不限于以上表示并记载的特定的详细内容和代表性的实施形态。因此，在不超出权利要求及其等同物所定义的总的发明的概念的精神或范围的情况下，可进行各种变更。 

Claims (16)

1.一种半导体装置的制造方法，其是在设置有半导体元件的半导体基板上形成形态互不相同的2种连接端子的半导体装置的制造方法，其特征在于，
在设置有所述半导体元件用的由第1导电层构成的电极端子的所述半导体基板的主面侧形成第1感光性树脂膜并进行曝光，使用强碱水溶液进行显影，从而形成到达所述电极端子的第1开口和第2开口，
将所述第1感光性树脂膜进行烘烤，从而使所述第1感光性树脂膜变成第1绝缘层，
在包含所述第1开口内的所述第1绝缘层上形成与所述电极端子电连接的第2导电层，
在所述第2导电层上形成第3导电层，所述第3导电层与所述第1导电层的氧化还原电位之差小于所述第1导电层与所述第2导电层的氧化还原电位之差，
在所述半导体基板的主面侧形成第2感光性树脂膜并进行曝光，使用强碱水溶液进行显影，从而形成到达所述第3导电层的第3开口、和经由所述第2开口到达所述电极端子的第4开口，
将所述第2感光性树脂膜进行烘烤，从而使所述第2感光性树脂膜变成第2绝缘层，并形成由所述电极端子从所述第2开口和第4开口露出而得到的第1连接端子，
形成与从所述第3开口露出的所述第3导电层电连接的凸块，从而形成第2连接端子。
2.根据权利要求1所述的半导体装置的制造方法，其特征在于，所述第1导电层由铝构成，所述第2导电层由铜构成，所述第3导电层由选自锰、钽、锌、铬、钴、镍、锡和铅之中的至少一种金属构成。
3.根据权利要求1所述的半导体装置的制造方法，其特征在于，在形成所述第2感光性树脂膜之前，使用有机溶液、碱溶液或所述有机溶液和所述碱溶液的混合液之中的任一种以上对所述第3导电层的表面进行表面处理，从而使所述第3导电层的表面氧化。
4.根据权利要求3所述的半导体装置的制造方法，其特征在于，所述有机溶液是选自醇、丙酮、己烷、甲苯、乙基胺、乙腈、四氢呋喃、丙二醇单甲基醚、丙二醇单甲基醚醋酸酯、N-甲基-2-吡咯烷酮、二甲基亚砜、N，N-二甲基甲酰胺之中的至少一种的溶液。
5.根据权利要求3所述的半导体装置的制造方法，其特征在于，所述碱溶液是选自铵系水溶液、钠系水溶液和钾系水溶液之中的至少一种溶液。
6.根据权利要求1所述的半导体装置的制造方法，其特征在于，所述第1连接端子是经由接合线与外部连接用的端子，所述第2连接端子是与其它电子部件连接用的端子。
7.一种半导体装置的制造方法，其是在设置有半导体元件的半导体基板上形成形态互不相同的2种连接端子的半导体装置的制造方法，其特征在于，
在设置有所述半导体元件用的由铝层构成的电极端子的所述半导体基板的主面侧形成第1感光性树脂膜并进行曝光，使用强碱水溶液进行显影，从而形成到达所述电极端子的第1开口和第2开口，
将所述第1感光性树脂膜进行烘烤，从而使所述第1感光性树脂膜变成第1绝缘层，
在包含所述第1开口和第2开口内的所述半导体基板的主面侧形成通电层，
在所述通电层上形成掩模层，该掩模层在包含所述第1开口的区域上具有规定的图案开口，
在所述图案开口内，通过使用了所述通电层的电解镀来形成由铜层构成的再配置布线层，进而通过使用了所述通电层的电解镀来在所述再配置布线层的最表层形成由镍层构成的导电性保护层，
除去所述掩模层，进而除去未被所述再配置布线层覆盖的所述通电层，
除去所述掩模层和所述通电层后，在所述半导体基板的主面侧形成第2感光性树脂膜并曝光，使用强碱水溶液进行显影，从而形成到达所述导电性保护层的第3开口、和经由所述第2开口到达所述电极端子的第4开口，
将所述第2感光性树脂膜进行烘烤，从而使所述第2感光性树脂膜变成第2绝缘层，并形成由所述电极端子从所述第2开口和第4开口露出而得到的第1连接端子，
形成与从所述第3开口露出的所述导电性保护层电连接的凸块，从而形成第2连接端子。
8.根据权利要求7所述的半导体装置的制造方法，其特征在于，在形成所述第2感光性树脂膜之前，使用有机溶液、碱溶液或所述有机溶液和所述碱溶液的混合液之中的任一种以上对所述镍层的表面进行表面处理，从而使所述镍层的表面氧化而在所述导电性保护层的表面形成氧化镍(II)。
9.根据权利要求8所述的半导体装置的制造方法，其特征在于，所述有机溶液是选自醇、丙酮、己烷、甲苯、乙基胺、乙腈、四氢呋喃、丙二醇单甲基醚、丙二醇单甲基醚醋酸酯、N-甲基-2-吡咯烷酮、二甲基亚砜、N，N-二甲基甲酰胺之中的至少一种的溶液。
10.根据权利要求8所述的半导体装置的制造方法，其特征在于，所述碱溶液是选自铵系水溶液、钠系水溶液和钾系水溶液之中的至少一种溶液。
11.根据权利要求7所述的半导体装置的制造方法，其特征在于，所述第1连接端子是经由接合线与外部连接用的端子，所述第2连接端子是与其它电子部件连接用的端子。
12.一种半导体装置，其特征在于，其具有：
半导体基板，该半导体基板上设置有半导体元件，同时在表面上设置有所述半导体元件用的由第1导电层构成的电极端子；
第1绝缘层，其形成于所述半导体基板的设置有所述电极端子的主面上，在所述电极端子上的区域具有到达所述电极端子的第1开口和第2开口，并且该第1绝缘层是由感光性树脂变成的；
再配置布线，其按照至少将所述第1开口内填埋的方式设置，并由与所述电极端子电连接的第2导电层构成；
导电性保护层，其形成于所述再配置布线的最表层，由第3导电层构成，所述第3导电层与所述第1导电层的氧化还原电位之差小于所述第1导电层与所述第2导电层的氧化还原电位之差；
第2绝缘层，其形成于所述第1绝缘层上和所述导电性保护层上，具有到达所述导电性保护层的第3开口、和经由所述第2开口到达所述电极端子的第4开口，并且该第2绝缘层是由感光性树脂变成的；和
凸块，其至少填埋所述第3开口并形成于所述导电性保护层上。
13.根据权利要求12所述的半导体装置，其特征在于，所述第1导电层由铝构成，所述第2导电层由铜构成，所述第3导电层由选自锰、钽、锌、铬、钴、镍、锡和铅之中的至少一种金属构成。
14.根据权利要求12所述的半导体装置，其特征在于，所述导电性保护层具有第1导电性保护层和第2导电性保护层，所述第1导电性保护层由形成于所述再配置布线上的所述第3导电层构成，所述第2导电性保护层比所述第1导电性保护层含有更多的所述第3导电层的金属氧化物，并形成于所述第1导电性保护层上。
15.根据权利要求14所述的半导体装置，其特征在于，所述第1导电层由铝构成，所述第2导电层由铜构成，所述第3导电层由选自锰、钽、锌、铬、钴、镍、锡和铅之中的至少一种金属构成。
16.根据权利要求15所述的半导体装置，其特征在于，所述第3导电层是镍，所述金属氧化物是氧化镍(II)。
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