CN101981511A - 光致抗蚀剂剥离组合物及使用所述组合物剥离光致抗蚀剂的方法 - Google Patents

光致抗蚀剂剥离组合物及使用所述组合物剥离光致抗蚀剂的方法 Download PDF

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Publication number
CN101981511A
CN101981511A CN2009801115584A CN200980111558A CN101981511A CN 101981511 A CN101981511 A CN 101981511A CN 2009801115584 A CN2009801115584 A CN 2009801115584A CN 200980111558 A CN200980111558 A CN 200980111558A CN 101981511 A CN101981511 A CN 101981511A
Authority
CN
China
Prior art keywords
photoresist
stripping composition
photoresist stripping
composition
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2009801115584A
Other languages
English (en)
Chinese (zh)
Inventor
朴珉春
闵盛晙
金璟晙
韩�熙
权赫俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Corp
Original Assignee
LG Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Chemical Co Ltd filed Critical LG Chemical Co Ltd
Publication of CN101981511A publication Critical patent/CN101981511A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2009801115584A 2008-04-07 2009-04-03 光致抗蚀剂剥离组合物及使用所述组合物剥离光致抗蚀剂的方法 Pending CN101981511A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20080032149 2008-04-07
KR10-2008-0032149 2008-04-07
PCT/KR2009/001728 WO2009125945A2 (ko) 2008-04-07 2009-04-03 포토레지스트 스트리퍼 조성물 및 이를 이용한 포토레지스트 박리방법

Publications (1)

Publication Number Publication Date
CN101981511A true CN101981511A (zh) 2011-02-23

Family

ID=41162370

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801115584A Pending CN101981511A (zh) 2008-04-07 2009-04-03 光致抗蚀剂剥离组合物及使用所述组合物剥离光致抗蚀剂的方法

Country Status (4)

Country Link
KR (1) KR101082515B1 (ko)
CN (1) CN101981511A (ko)
TW (1) TWI406112B (ko)
WO (1) WO2009125945A2 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103258756A (zh) * 2013-04-26 2013-08-21 京东方科技集团股份有限公司 一种剥离设备的剥离能力的评定方法及评定系统
CN103513523A (zh) * 2013-09-26 2014-01-15 杨桂望 光刻胶清洗剂
CN113614648A (zh) * 2019-03-25 2021-11-05 松下知识产权经营株式会社 抗蚀剂剥离液

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102884038B (zh) 2010-05-18 2016-08-03 Lg化学株式会社 一种制备乳酸烷基酯的方法以及使用该乳酸烷基酯制备乳酰胺的方法
KR101130353B1 (ko) * 2011-08-12 2012-03-27 진정복 포토레지스트용 박리 조성물 및 이를 이용한 포토레지스트 박리방법
KR102392062B1 (ko) * 2014-09-11 2022-04-29 동우 화인켐 주식회사 레지스트 박리액 조성물
KR102392027B1 (ko) * 2014-09-17 2022-04-29 동우 화인켐 주식회사 레지스트 박리액 조성물, 상기 조성물을 사용하는 플랫 패널 디스플레이 기판의 제조방법, 및 상기 제조방법으로 제조된 플랫 패널 디스플레이 기판

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3255551B2 (ja) * 1995-01-31 2002-02-12 東京応化工業株式会社 レジスト用剥離液組成物
KR100335011B1 (ko) * 1999-08-19 2002-05-02 주식회사 동진쎄미켐 레지스트 제거용 조성물
KR100363271B1 (ko) * 2000-06-12 2002-12-05 주식회사 동진쎄미켐 포토레지스트 리무버 조성물
JP2004029346A (ja) * 2002-06-25 2004-01-29 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
KR100850163B1 (ko) * 2006-01-03 2008-08-04 주식회사 엘지화학 포토레지스트용 스트리퍼 조성물

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103258756A (zh) * 2013-04-26 2013-08-21 京东方科技集团股份有限公司 一种剥离设备的剥离能力的评定方法及评定系统
WO2014173008A1 (zh) * 2013-04-26 2014-10-30 京东方科技集团股份有限公司 剥离设备的剥离能力的评定方法和系统及评定用部件
CN103258756B (zh) * 2013-04-26 2015-09-09 京东方科技集团股份有限公司 一种剥离设备的剥离能力的评定方法及评定系统
CN103513523A (zh) * 2013-09-26 2014-01-15 杨桂望 光刻胶清洗剂
CN113614648A (zh) * 2019-03-25 2021-11-05 松下知识产权经营株式会社 抗蚀剂剥离液

Also Published As

Publication number Publication date
WO2009125945A3 (ko) 2009-12-30
KR20090106992A (ko) 2009-10-12
WO2009125945A2 (ko) 2009-10-15
TW201001098A (en) 2010-01-01
KR101082515B1 (ko) 2011-11-10
TWI406112B (zh) 2013-08-21

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Application publication date: 20110223