WO2009125945A3 - 포토레지스트 스트리퍼 조성물 및 이를 이용한 포토레지스트 박리방법 - Google Patents

포토레지스트 스트리퍼 조성물 및 이를 이용한 포토레지스트 박리방법 Download PDF

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Publication number
WO2009125945A3
WO2009125945A3 PCT/KR2009/001728 KR2009001728W WO2009125945A3 WO 2009125945 A3 WO2009125945 A3 WO 2009125945A3 KR 2009001728 W KR2009001728 W KR 2009001728W WO 2009125945 A3 WO2009125945 A3 WO 2009125945A3
Authority
WO
WIPO (PCT)
Prior art keywords
photoresist
stripper composition
method employing
peeling method
same
Prior art date
Application number
PCT/KR2009/001728
Other languages
English (en)
French (fr)
Other versions
WO2009125945A2 (ko
Inventor
박민춘
민성준
김경준
한희
권혁준
Original Assignee
주식회사 엘지화학
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 엘지화학 filed Critical 주식회사 엘지화학
Priority to CN2009801115584A priority Critical patent/CN101981511A/zh
Publication of WO2009125945A2 publication Critical patent/WO2009125945A2/ko
Publication of WO2009125945A3 publication Critical patent/WO2009125945A3/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 포토레지스트용 스트리퍼 조성물에 관한 것이다. 보다 구체적으로, 본 발명은 포토레지스트 박리 능력이 우수하여 비교적 소량으로도 많은 양의 포토레지스트를 박리할 수 있고, 고온 공정 조건에도 적용 가능하며, 조성물 내 다른 성분들과 반응하지 않고, 불필요한 부산물을 발생시키지 않는 포토레지스트 스트리퍼 조성물 및 이를 이용한 포토레지스트 박리방법에 관한 것이다.
PCT/KR2009/001728 2008-04-07 2009-04-03 포토레지스트 스트리퍼 조성물 및 이를 이용한 포토레지스트 박리방법 WO2009125945A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009801115584A CN101981511A (zh) 2008-04-07 2009-04-03 光致抗蚀剂剥离组合物及使用所述组合物剥离光致抗蚀剂的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0032149 2008-04-07
KR20080032149 2008-04-07

Publications (2)

Publication Number Publication Date
WO2009125945A2 WO2009125945A2 (ko) 2009-10-15
WO2009125945A3 true WO2009125945A3 (ko) 2009-12-30

Family

ID=41162370

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/001728 WO2009125945A2 (ko) 2008-04-07 2009-04-03 포토레지스트 스트리퍼 조성물 및 이를 이용한 포토레지스트 박리방법

Country Status (4)

Country Link
KR (1) KR101082515B1 (ko)
CN (1) CN101981511A (ko)
TW (1) TWI406112B (ko)
WO (1) WO2009125945A2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2573066B1 (en) 2010-05-18 2017-05-17 LG Chem, Ltd. Method for preparing a lactate
KR101130353B1 (ko) * 2011-08-12 2012-03-27 진정복 포토레지스트용 박리 조성물 및 이를 이용한 포토레지스트 박리방법
CN103258756B (zh) * 2013-04-26 2015-09-09 京东方科技集团股份有限公司 一种剥离设备的剥离能力的评定方法及评定系统
CN103513523A (zh) * 2013-09-26 2014-01-15 杨桂望 光刻胶清洗剂
KR102392062B1 (ko) * 2014-09-11 2022-04-29 동우 화인켐 주식회사 레지스트 박리액 조성물
KR102392027B1 (ko) * 2014-09-17 2022-04-29 동우 화인켐 주식회사 레지스트 박리액 조성물, 상기 조성물을 사용하는 플랫 패널 디스플레이 기판의 제조방법, 및 상기 제조방법으로 제조된 플랫 패널 디스플레이 기판
JP6688978B1 (ja) * 2019-03-25 2020-04-28 パナソニックＩｐマネジメント株式会社 レジスト剥離液

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08202052A (ja) * 1995-01-31 1996-08-09 Tokyo Ohka Kogyo Co Ltd レジスト用剥離液組成物
KR20010018377A (ko) * 1999-08-19 2001-03-05 주식회사 동진쎄미켐 레지스트 제거용 조성물
KR20010111605A (ko) * 2000-06-12 2001-12-19 주식회사 동진쎄미켐 포토레지스트 리무버 조성물
KR20070073617A (ko) * 2006-01-03 2007-07-10 주식회사 엘지화학 포토레지스트용 스트리퍼 조성물

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004029346A (ja) * 2002-06-25 2004-01-29 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08202052A (ja) * 1995-01-31 1996-08-09 Tokyo Ohka Kogyo Co Ltd レジスト用剥離液組成物
KR20010018377A (ko) * 1999-08-19 2001-03-05 주식회사 동진쎄미켐 레지스트 제거용 조성물
KR20010111605A (ko) * 2000-06-12 2001-12-19 주식회사 동진쎄미켐 포토레지스트 리무버 조성물
KR20070073617A (ko) * 2006-01-03 2007-07-10 주식회사 엘지화학 포토레지스트용 스트리퍼 조성물

Also Published As

Publication number Publication date
WO2009125945A2 (ko) 2009-10-15
KR20090106992A (ko) 2009-10-12
TW201001098A (en) 2010-01-01
TWI406112B (zh) 2013-08-21
KR101082515B1 (ko) 2011-11-10
CN101981511A (zh) 2011-02-23

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