TWI406112B - 光阻清除組成物及清除光阻之方法 - Google Patents

光阻清除組成物及清除光阻之方法 Download PDF

Info

Publication number
TWI406112B
TWI406112B TW098111480A TW98111480A TWI406112B TW I406112 B TWI406112 B TW I406112B TW 098111480 A TW098111480 A TW 098111480A TW 98111480 A TW98111480 A TW 98111480A TW I406112 B TWI406112 B TW I406112B
Authority
TW
Taiwan
Prior art keywords
photoresist
group
photoresist removal
removal composition
compound
Prior art date
Application number
TW098111480A
Other languages
English (en)
Chinese (zh)
Other versions
TW201001098A (en
Inventor
Min-Choon Park
Sung-Joon Min
Kyung-Jun Kim
Hee Han
Hyok-Joon Kwon
Original Assignee
Lg Chemical Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Chemical Ltd filed Critical Lg Chemical Ltd
Publication of TW201001098A publication Critical patent/TW201001098A/zh
Application granted granted Critical
Publication of TWI406112B publication Critical patent/TWI406112B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW098111480A 2008-04-07 2009-04-07 光阻清除組成物及清除光阻之方法 TWI406112B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20080032149 2008-04-07

Publications (2)

Publication Number Publication Date
TW201001098A TW201001098A (en) 2010-01-01
TWI406112B true TWI406112B (zh) 2013-08-21

Family

ID=41162370

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098111480A TWI406112B (zh) 2008-04-07 2009-04-07 光阻清除組成物及清除光阻之方法

Country Status (4)

Country Link
KR (1) KR101082515B1 (ko)
CN (1) CN101981511A (ko)
TW (1) TWI406112B (ko)
WO (1) WO2009125945A2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2637989T3 (es) 2010-05-18 2017-10-18 Lg Chem, Ltd. Método para preparar un lactato
KR101130353B1 (ko) * 2011-08-12 2012-03-27 진정복 포토레지스트용 박리 조성물 및 이를 이용한 포토레지스트 박리방법
CN103258756B (zh) * 2013-04-26 2015-09-09 京东方科技集团股份有限公司 一种剥离设备的剥离能力的评定方法及评定系统
CN103513523A (zh) * 2013-09-26 2014-01-15 杨桂望 光刻胶清洗剂
KR102392062B1 (ko) * 2014-09-11 2022-04-29 동우 화인켐 주식회사 레지스트 박리액 조성물
KR102392027B1 (ko) * 2014-09-17 2022-04-29 동우 화인켐 주식회사 레지스트 박리액 조성물, 상기 조성물을 사용하는 플랫 패널 디스플레이 기판의 제조방법, 및 상기 제조방법으로 제조된 플랫 패널 디스플레이 기판
CN113614648A (zh) * 2019-03-25 2021-11-05 松下知识产权经营株式会社 抗蚀剂剥离液

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08202052A (ja) * 1995-01-31 1996-08-09 Tokyo Ohka Kogyo Co Ltd レジスト用剥離液組成物
WO2001096964A1 (en) * 2000-06-12 2001-12-20 Dongjin Semichem Co., Ltd. Photoresist remover composition

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100335011B1 (ko) * 1999-08-19 2002-05-02 주식회사 동진쎄미켐 레지스트 제거용 조성물
JP2004029346A (ja) * 2002-06-25 2004-01-29 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
KR100850163B1 (ko) * 2006-01-03 2008-08-04 주식회사 엘지화학 포토레지스트용 스트리퍼 조성물

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08202052A (ja) * 1995-01-31 1996-08-09 Tokyo Ohka Kogyo Co Ltd レジスト用剥離液組成物
WO2001096964A1 (en) * 2000-06-12 2001-12-20 Dongjin Semichem Co., Ltd. Photoresist remover composition

Also Published As

Publication number Publication date
TW201001098A (en) 2010-01-01
WO2009125945A2 (ko) 2009-10-15
KR20090106992A (ko) 2009-10-12
CN101981511A (zh) 2011-02-23
WO2009125945A3 (ko) 2009-12-30
KR101082515B1 (ko) 2011-11-10

Similar Documents

Publication Publication Date Title
JP4773562B2 (ja) フォトレジスト用ストリッパー組成物
JP4208924B2 (ja) 非水性、非腐食性マイクロエレクトロニクス洗浄組成物
KR100846057B1 (ko) 포토레지스트용 스트리퍼 조성물
TWI406112B (zh) 光阻清除組成物及清除光阻之方法
KR20020012141A (ko) 스트리핑 조성물
KR101691850B1 (ko) 포토레지스트 스트리퍼 조성물
KR101051438B1 (ko) 포토레지스트 스트리퍼 조성물 및 이를 이용한포토레지스트 박리방법
KR100794465B1 (ko) 포토레지스트용 스트리퍼 조성물
KR100544889B1 (ko) 포토레지스트용 스트리퍼 조성물
JP5279921B2 (ja) フォトレジストストリッパー組成物及びこれを利用したフォトレジストの剥離方法
KR100850163B1 (ko) 포토레지스트용 스트리퍼 조성물
KR102572751B1 (ko) 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
KR20080076535A (ko) Ｎ-메틸아세트아마이드를 포함하는 포토레지스트용 박리액조성물
KR101292497B1 (ko) 레지스트 박리액 조성물 및 이를 이용한 레지스트의박리방법
TWI405053B (zh) 光阻剝離組成物及剝離光阻之方法
TWI516879B (zh) 形成銅系配線用光阻剝離劑組成物、使用其來製造半導體裝置及平板顯示器之方法
JP2024531941A (ja) レジスト剥離液組成物及びそれを用いたパターン形成方法
CN118244593A (zh) 光刻胶剥离用组合物
KR20100011472A (ko) 구리용 레지스트 제거용 조성물
KR20040098750A (ko) 구리 배선용 포토레지스트 스트리퍼 조성물
KR20110026976A (ko) 구리계 배선의 형성을 위한 레지스트 제거용 조성물
JP2015068845A (ja) レジスト剥離剤及びそれを用いたレジスト剥離方法
KR20100041296A (ko) 구리용 레지스트 제거용 조성물
KR20080044420A (ko) 포토레지스트용 스트리퍼 조성물
KR20110026977A (ko) 구리계 배선의 형성을 위한 레지스트 제거용 조성물