CN101942652B - 镀覆基材 - Google Patents
镀覆基材 Download PDFInfo
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- CN101942652B CN101942652B CN2010101334459A CN201010133445A CN101942652B CN 101942652 B CN101942652 B CN 101942652B CN 2010101334459 A CN2010101334459 A CN 2010101334459A CN 201010133445 A CN201010133445 A CN 201010133445A CN 101942652 B CN101942652 B CN 101942652B
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- 239000000758 substrate Substances 0.000 title description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 67
- 238000007747 plating Methods 0.000 claims abstract description 58
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 32
- 239000010931 gold Substances 0.000 claims abstract description 27
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052737 gold Inorganic materials 0.000 claims abstract description 26
- 238000007772 electroless plating Methods 0.000 claims abstract description 23
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 20
- 210000000981 epithelium Anatomy 0.000 claims description 30
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 abstract description 8
- 238000005260 corrosion Methods 0.000 abstract description 8
- 239000010953 base metal Substances 0.000 abstract description 6
- 238000005476 soldering Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000006467 substitution reaction Methods 0.000 abstract 1
- 239000002585 base Substances 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 12
- 239000007788 liquid Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 230000002829 reductive effect Effects 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000010985 leather Substances 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000010970 precious metal Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910018104 Ni-P Inorganic materials 0.000 description 2
- 229910018536 Ni—P Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005660 chlorination reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000005844 autocatalytic reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005649 metathesis reaction Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/072—Electroless plating, e.g. finish plating or initial plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/073—Displacement plating, substitution plating or immersion plating, e.g. for finish plating
Abstract
本发明的目的是提供一种基底金属的耐蚀性优异、并且可提高焊料接合性，而且在成本方面也比现有制品有利的具有无电解镀金皮膜的基材。本发明的镀覆基材，是在基材上具有多层膜的镀覆基材，其特征在于，该多层膜包括：下层，其为无电解镀镍皮膜；中间层，其是膜厚度为0.2nm以上、小于10nm，或者重量为0.2432μg/cm2以上、小于12.160μg/cm2的置换型无电解镀钯皮膜；上层，其为无电解镀金皮膜。
Description
本申请是于2006年3月13日提交的申请号为200680009942.X、名称为“镀覆基材”的专利申请的分案申请。
技术领域
本发明涉及基材表面具有无电解镀镍皮膜、作为中间层的置换型无电解镀钯皮膜、作为上层的无电解镀金皮膜，并且基底金属的耐蚀性、软钎焊性优异的镀覆基材。
背景技术
无电解镀金层适用于印刷布线板的线路、IC组件、ITO基板、IC卡等电子工业部件的端子、线路表面。更具体地讲，无电解镀金层是为了提高基材上的铜箔或镀铜布线的耐蚀性、焊料接合性、搭接性而使用的。
在基底无电解镀镍被膜上进行所规定厚度的置换型无电解镀金的场合，尤其是刚开始反应后镍与金的置换反应快，选择性地强烈攻击无电解镍被膜中的析出粒子的晶粒边界部分，析出粒子的侵蚀较深地进行，在镀金被膜的下面形成缺陷部分。根据情况，缺陷部分连续、或集中，甚至引起镀金被膜的外观不良(表面产生点腐蚀)。此外，尽管析出的金被膜的膜厚度薄，但是侵蚀深度深，由于这样的置换型镀金液所导致的无电解镀镍被膜的脆弱化及与镀金被膜的粘附性不足，在耐久性试验时引起剥离，或进行软钎焊时不能确保充分的软钎焊强度，上述等等的问题已被指出。
为了解决该无电解镀金中的问题，希望提高基底金属的耐蚀性、提高焊料接合性。在这种状况中，提出了通过在无电解镀镍层和无电解镀金层之间设置无电解镀钯层来提高软钎焊性的方案(专利文献1)。
专利文献1：特公平8-28561号公报
发明内容
然而，上述的方案中，中间层的镀钯层为0.01～0.2μm(10～200nm)，并且镀钯液使用了含有还原剂的还原型(自催化型)镀钯液。还原型镀钯液的问题是浴稳定性低，因此浴控制非常繁杂，也容易引起浴分解。另外，如上述那样由于膜厚度厚，较多地使用贵金属钯，在成本方面产生问题。
本发明的目的在于，提供一种即使极薄地形成作为中间层的镀钯层，基底金属的耐蚀性也优异，并且可提高焊料接合性的具有无电解镀金皮膜的基材。
本发明者潜心研究的结果发现，在设于基材上的无电解镀镍层和无电解镀金层之间形成置换型无电解镀钯层的场合，即使该镀钯层为小于10nm的薄皮膜，也可以具备充分的基底金属耐蚀性及焊料接合性，从而完成了本发明。
即，本发明涉及以下方案：
[1]一种镀覆基材，是在基材上具有多层膜的镀覆基材，其特征在于，该多层膜包括：
下层，其为无电解镀镍皮膜；
中间层，其是膜厚度为0.2nm以上、小于10nm，或者重量为0.2432μg/cm2以上、小于12.160μg/cm2的置换型无电解镀钯皮膜；
上层，其为无电解镀金皮膜。
[2]如[1]所述的镀覆基材，其特征在于，无电解镀镍皮膜为无电解镀Ni-P皮膜。
[3]如[1]或[2]所述的镀覆基材，其特征在于，无电解镀镍皮膜中的磷含有率为15重量％以下。
[4]如[1]～[3]的任一项所述的镀覆基材，其特征在于，无电解镀金皮膜为亚硫酸系的无氰型(cyanide-free type)。
发明效果
根据本发明，可大大降低成本高的贵金属钯的被覆量，而且关于基底金属的耐蚀性及焊料接合性，可得到与现有技术的使用钯被覆量为多量的还原型皮膜的场合相比实质上并不逊色的结果。
具体实施方式
作为本发明所使用的基材，为印刷布线板的电路、IC组件、ITO基板、IC卡等电子工业部件的端子、电路表面等，但没有特殊限制，可适用于需要无电解镀金的基材。
本发明所使用的用于形成无电解镀镍皮膜的无电解镀镍液，并没有特殊限制，可以使用在无电解镀金时为形成基底镀镍皮膜而通常使用的无电解镀镍液。优选使用形成Ni-P镀覆皮膜的镀覆液。在该场合，形成无电解镀镍皮膜并使得该皮膜中的磷含有率为15重量％以下，优选为5-10重量％的范围。
另外，对于用于形成无电解镀金皮膜的无电解镀金液，也没有特殊限制，可以使用通常作为置换型无电解镀金液而使用的无电解镀金液，但优选亚硫酸系的无氰型。
另外，本发明中使用的、在上述基底无电解镀镍皮膜和无电解镀金皮膜之间设置的无电解镀钯皮膜，规定为置换型无电解镀钯层是重要的。通过还原型无电解镀钯来形成该皮膜的场合，需要控制皮膜厚度，并且为确保充分的焊料接合性而使该皮膜厚度为50nm左右以上，但根据本发明，采用置换型无电解镀覆的场合，可以使之极薄。在本发明中，置换型无电解镀钯皮膜的厚度也很重要。在本发明中，无电解镀钯皮膜的厚度以0.2nm以上、小于10nm的范围形成。或者，按重量计，以0.2432μg/cm2以上、小于12.160μg/cm2的范围形成。优选为0.2nm以上9nm以下，另外，按重量计优选为0.2432μg/cm2以上10.444μg/cm2以下，更优选为0.5nm以上5nm以下(0.608μg/cm2以上6.080μg/cm2以下)的范围。当小于0.2nm或小于0.2432μg/cm2时，不能呈现无电解镀钯中间层的效果，而达到10nm或12.160μg/cm2时，由于贵金属钯的使用量增大因此不仅在成本方面的优越性变小，而且也产生导致焊料接合强度降低的问题。
对于用于形成中间镀覆皮膜的置换型无电解镀钯液本身，可以使用公知的镀覆液。
另外，本发明中，上述无电解镍基底镀层的皮膜厚度优选为1-20μm，而无电解镀金皮膜厚度优选为10-500nm。
实施例
以下对本发明的实施例进行说明。
实施例1-5，比较例1-4
镀覆工艺：
实施例1-5及比较例2-3中，如下述所示，碱脱脂液、活化剂、无电解镀镍液，分别使用了日矿メタルプレ一テイング公司的制品，而置换型无电解镀钯液、无电解镀金液，使用了日矿マテリアルズ公司的制品。
将下述所示的评价用印刷布线板1)、2)使用碱脱脂液(日矿プレ一テイング公司制，P-1000)，在45℃、pH12.0的条件下进行2分钟碱脱脂。接着，按下述顺序进行各工序。再者，除了预浸渍→赋予活化剂之间以外均插入有1分钟的水洗工序。
软蚀刻(硫酸+过硫酸钠系，25℃，2分钟)
→硫酸洗涤(3％，25℃，2分钟)
→预浸渍(盐酸系，25℃，1分钟)
→赋予活化剂(日矿プレ一テイング公司制，KG-522(氯化物系，Pd浓度：0.12g/L，25℃，pH＜1.0，30秒))
→硫酸洗涤(3％，25℃，10秒)
→无电解镀镍(日矿プレ一テイング公司制，KG-530(88℃，pH4.5，25分钟，P含有率为7％))
→置换型无电解镀钯(日矿マテリアルズ公司制，CF-400(氯化物系，Pd：0.1g/L，25℃，pH2.0，1分钟))
→无电解镀金(日矿マテリアルズ公司制，CF-500SS(亚硫酸系，Au浓度：1.0g/L，80℃，pH7.5，2分钟))。
评价用基板：
1)具有500个抗蚀剂开口部为Φ0.48mm的焊盘(pad)的印刷布线板。
2)具有抗蚀剂开口部为1～10mm见方的焊盘的印刷布线板。
另外，将不进行上述置换型无电解镀钯的例子作为比较例1，将代替上述置换型无电解镀钯、进行了还原型无电解镀钯(日矿マテリアルズ公司制，CA-400(Pd：0.8g/L，43℃，pH7.5，5分钟)的例子作为比较例4。
对于如上述那样操作、形成了3层镀覆皮膜的印刷布线板进行了以下评价。
耐蚀性：
对1)的基板进行所规定的镀覆后，在20体积％的硝酸水溶液中浸渍10分钟后，进行水洗，干燥。使用50倍的光学显微镜观察全部焊盘的镀金层外观。其评价基准为：500个焊盘中，变色的焊盘数量，小于1％的评价为○，为1％以上、但小于10％的评价为△，为10％以上的评价为×。
焊料润湿性：
对2)的基板上进行所规定的镀覆处理后，对基板进行160℃×24小时热处理。然后，在10个3mm见方的焊盘上涂布助焊剂，并将Φ0.6mm的Sn-4.0Ag-0.5Cu焊料球搁置在焊盘中央，在软熔炉中、峰温度250℃下进行软熔。
焊料润湿扩展范围为Φ1.5mm以上的评价为○，为1.2mm以上、但小于1.5mm的评价为△，小于1.2mm的评价为×。
焊料接合强度：
对1)的基板上进行所规定的镀覆处理后，对基板进行160℃×24小时热处理，然后在20个Φ0.48mm的焊盘上涂布助焊剂(flux)，搭载0.6mmΦ的Sn-4.0Ag-0.5Cu焊料球，在软熔炉中、峰温度250℃下进行软熔。
使用デイジ公司制的接合试验机(bond tester)-4000，采用加热牵引法测定接合强度。
另外，钯成本，是用将使用还原型镀钯液，形成厚度50nm的镀钯层的场合(比较例4)的钯基体金属成本作为1的场合的相对成本表示的。
将上述的评价结果示于表1、2。
表1
表2
Claims (1)
1.一种镀覆基材，是在基材上具有多层膜的镀覆基材，其特征在于，该多层膜包括：
下层，其是膜厚度为1～20μm的无电解镀镍皮膜；
中间层，其是膜厚度为0.2nm以上且9nm以下，或者重量为0.2432μg/cm2以上且10.444μg/cm2以下的置换型无电解镀钯皮膜；
上层，其为无电解镀金皮膜，该无电解镀金皮膜为亚硫酸系的无氰型，且其膜厚度为10～500μm。
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| JP2007031740A (ja) * | 2005-07-22 | 2007-02-08 | Shinko Electric Ind Co Ltd | 電子部品及びその製造方法 |
| JP5288362B2 (ja) * | 2007-01-17 | 2013-09-11 | 奥野製薬工業株式会社 | 多層めっき皮膜及びプリント配線板 |
| JP5013077B2 (ja) | 2007-04-16 | 2012-08-29 | 上村工業株式会社 | 無電解金めっき方法及び電子部品 |
| EP2177646B1 (en) * | 2008-10-17 | 2011-03-23 | ATOTECH Deutschland GmbH | Stress-reduced Ni-P/Pd stacks for bondable wafer surfaces |
| JP5680342B2 (ja) | 2009-09-02 | 2015-03-04 | Tdk株式会社 | めっき膜、プリント配線板及びモジュール基板 |
| WO2011099597A1 (ja) * | 2010-02-15 | 2011-08-18 | 荏原ユージライト株式会社 | プリント配線板の製造方法 |
| CN102802364B (zh) * | 2012-09-11 | 2014-11-05 | 深圳市和美精艺科技有限公司 | 一种在印刷电路板的导电层中设置金属钯层的方法及其层状结构 |
| JP6466521B2 (ja) * | 2017-06-28 | 2019-02-06 | 小島化学薬品株式会社 | 無電解めっきプロセス |
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| JPH081980B2 (ja) * | 1993-11-25 | 1996-01-10 | 大日工業株式会社 | プリント配線板及びその製造方法 |
| JP2785102B2 (ja) * | 1994-03-31 | 1998-08-13 | 株式会社ジャパンエナジー | 無電解金めっき方法 |
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| JP特开2003-226993A 2003.08.15 |
| JP特开平10-287994A 1998.10.27 |
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| CN101151399A (zh) | 2008-03-26 |
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