CN101937374A - 存储存储器重映射信息的非易失性存储器 - Google Patents
存储存储器重映射信息的非易失性存储器 Download PDFInfo
- Publication number
- CN101937374A CN101937374A CN2010102197459A CN201010219745A CN101937374A CN 101937374 A CN101937374 A CN 101937374A CN 2010102197459 A CN2010102197459 A CN 2010102197459A CN 201010219745 A CN201010219745 A CN 201010219745A CN 101937374 A CN101937374 A CN 101937374A
- Authority
- CN
- China
- Prior art keywords
- memory
- storer
- storage
- address
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0409—Online test
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0411—Online error correction
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/494,994 US8412987B2 (en) | 2009-06-30 | 2009-06-30 | Non-volatile memory to store memory remap information |
US12/494,994 | 2009-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101937374A true CN101937374A (zh) | 2011-01-05 |
CN101937374B CN101937374B (zh) | 2015-07-01 |
Family
ID=43299312
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010219745.9A Active CN101937374B (zh) | 2009-06-30 | 2010-06-29 | 存储存储器重映射信息的非易失性存储器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8412987B2 (zh) |
JP (1) | JP5996838B2 (zh) |
KR (1) | KR101647845B1 (zh) |
CN (1) | CN101937374B (zh) |
DE (1) | DE102010030745B4 (zh) |
TW (1) | TWI484330B (zh) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103076996A (zh) * | 2013-01-08 | 2013-05-01 | 深圳市硅格半导体有限公司 | Pcram控制方法及系统 |
CN105339909A (zh) * | 2013-05-29 | 2016-02-17 | 微软技术许可有限责任公司 | 存储系统和有别名的存储器 |
CN105874434A (zh) * | 2014-01-02 | 2016-08-17 | 高通股份有限公司 | 比特重映射系统 |
CN108630269A (zh) * | 2012-12-06 | 2018-10-09 | 美光科技公司 | 基于错误校正而设定默认读取信号 |
CN109767801A (zh) * | 2017-11-10 | 2019-05-17 | 爱思开海力士有限公司 | 存储器控制器、包括其的半导体存储系统以及驱动方法 |
CN110021333A (zh) * | 2017-11-23 | 2019-07-16 | 三星电子株式会社 | 存储器装置和存储器系统 |
CN110462592A (zh) * | 2017-03-29 | 2019-11-15 | 美光科技公司 | 用于多维存储器的选择性错误率信息 |
CN110910807A (zh) * | 2018-09-17 | 2020-03-24 | 苹果公司 | 用于像素内存储器显示器的有缺陷的存储器的校正 |
CN111694690A (zh) * | 2019-03-15 | 2020-09-22 | 英韧科技(上海)有限公司 | 具有内存映射的纠错码架构的系统和方法 |
CN113297014A (zh) * | 2020-02-22 | 2021-08-24 | 北京希姆计算科技有限公司 | 待测内存容量的识别方法及装置、电子设备及存储介质 |
WO2021196661A1 (zh) * | 2020-04-01 | 2021-10-07 | 长鑫存储技术有限公司 | 读写方法及存储器装置 |
WO2021196621A1 (zh) * | 2020-04-01 | 2021-10-07 | 长鑫存储技术有限公司 | 读写方法及存储器装置 |
US11527301B2 (en) | 2020-04-01 | 2022-12-13 | Changxin Memory Technologies, Inc. | Method for reading and writing and memory device |
US11881240B2 (en) | 2020-04-01 | 2024-01-23 | Changxin Memory Technologies, Inc. | Systems and methods for read/write of memory devices and error correction |
US11894088B2 (en) | 2020-04-01 | 2024-02-06 | Changxin Memory Technologies, Inc. | Method for reading and writing and memory device |
US11899971B2 (en) | 2020-04-01 | 2024-02-13 | Changxin Memory Technologies, Inc. | Method for reading and writing and memory device |
US11914479B2 (en) | 2020-04-01 | 2024-02-27 | Changxin Memory Technologies, Inc. | Method for reading and writing and memory device |
US11922023B2 (en) | 2020-04-01 | 2024-03-05 | Changxin Memory Technologies, Inc. | Read/write method and memory device |
Families Citing this family (198)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8370712B2 (en) * | 2009-07-23 | 2013-02-05 | International Business Machines Corporation | Memory management in a non-volatile solid state memory device |
WO2011159805A2 (en) * | 2010-06-15 | 2011-12-22 | Fusion-Io, Inc. | Apparatus, system, and method for providing error correction |
US8533538B2 (en) * | 2010-06-28 | 2013-09-10 | Intel Corporation | Method and apparatus for training a memory signal via an error signal of a memory |
US9003247B2 (en) * | 2011-04-28 | 2015-04-07 | Hewlett-Packard Development Company, L.P. | Remapping data with pointer |
US20120311262A1 (en) * | 2011-06-01 | 2012-12-06 | International Business Machines Corporation | Memory cell presetting for improved memory performance |
US8996955B2 (en) | 2011-11-16 | 2015-03-31 | HGST Netherlands B.V. | Techniques for storing data in stuck and unstable memory cells |
CN102567213B (zh) * | 2011-11-30 | 2014-09-24 | 华中科技大学 | 相变存储器的写均衡方法 |
US9070483B2 (en) | 2012-10-10 | 2015-06-30 | HGST Netherlands B.V. | Encoding and decoding redundant bits to accommodate memory cells having stuck-at faults |
US9274884B2 (en) | 2012-10-10 | 2016-03-01 | HGST Netherlands B.V. | Encoding and decoding data to accommodate memory cells having stuck-at faults |
US8943388B2 (en) | 2012-12-12 | 2015-01-27 | HGST Netherlands B.V. | Techniques for encoding and decoding using a combinatorial number system |
US8812934B2 (en) | 2012-12-12 | 2014-08-19 | HGST Netherlands B.V. | Techniques for storing bits in memory cells having stuck-at faults |
KR101545512B1 (ko) * | 2012-12-26 | 2015-08-24 | 성균관대학교산학협력단 | 반도체 메모리 장치, 검증 독출 방법 및 시스템 |
KR102025193B1 (ko) * | 2013-02-19 | 2019-09-25 | 삼성전자주식회사 | 메모리 컨트롤러 및 그것의 동작 방법, 메모리 컨트롤러를 포함하는 메모리 시스템 |
US9349476B2 (en) * | 2013-02-21 | 2016-05-24 | Sandisk Technologies Inc. | Methods, systems, and computer readable media for early detection of potential flash failures using an adaptive system level algorithm based on flash program verify |
US9158667B2 (en) | 2013-03-04 | 2015-10-13 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
US20140282478A1 (en) * | 2013-03-15 | 2014-09-18 | Silicon Graphics International Corp. | Tcp server bootloader |
US10198314B2 (en) * | 2013-05-23 | 2019-02-05 | Rambus Inc. | Memory device with in-system repair capability |
JP6102515B2 (ja) * | 2013-05-24 | 2017-03-29 | 富士通株式会社 | 情報処理装置、制御回路、制御プログラム、および制御方法 |
US8964496B2 (en) | 2013-07-26 | 2015-02-24 | Micron Technology, Inc. | Apparatuses and methods for performing compare operations using sensing circuitry |
US9274715B2 (en) * | 2013-08-02 | 2016-03-01 | Qualcomm Incorporated | Methods and apparatuses for in-system field repair and recovery from memory failures |
US8971124B1 (en) | 2013-08-08 | 2015-03-03 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
US9153305B2 (en) | 2013-08-30 | 2015-10-06 | Micron Technology, Inc. | Independently addressable memory array address spaces |
US9442670B2 (en) | 2013-09-03 | 2016-09-13 | Sandisk Technologies Llc | Method and system for rebalancing data stored in flash memory devices |
US9519577B2 (en) * | 2013-09-03 | 2016-12-13 | Sandisk Technologies Llc | Method and system for migrating data between flash memory devices |
US9019785B2 (en) | 2013-09-19 | 2015-04-28 | Micron Technology, Inc. | Data shifting via a number of isolation devices |
US9449675B2 (en) | 2013-10-31 | 2016-09-20 | Micron Technology, Inc. | Apparatuses and methods for identifying an extremum value stored in an array of memory cells |
US9430191B2 (en) | 2013-11-08 | 2016-08-30 | Micron Technology, Inc. | Division operations for memory |
KR20150084244A (ko) * | 2014-01-13 | 2015-07-22 | 삼성전자주식회사 | 메모리 장치, 메모리 시스템 및 메모리 장치의 동작 방법 |
US9299457B2 (en) | 2014-02-23 | 2016-03-29 | Qualcomm Incorporated | Kernel masking of DRAM defects |
US20150270015A1 (en) * | 2014-03-19 | 2015-09-24 | Micron Technology, Inc. | Memory mapping |
US9934856B2 (en) | 2014-03-31 | 2018-04-03 | Micron Technology, Inc. | Apparatuses and methods for comparing data patterns in memory |
US9292380B2 (en) | 2014-04-06 | 2016-03-22 | Freescale Semiconductor,Inc. | Memory access scheme for system on chip |
US20150286529A1 (en) * | 2014-04-08 | 2015-10-08 | Micron Technology, Inc. | Memory device having controller with local memory |
KR20150130888A (ko) * | 2014-05-14 | 2015-11-24 | 에스케이하이닉스 주식회사 | 셀프 리페어 동작을 수행하는 반도체 메모리 장치 |
KR102321501B1 (ko) * | 2014-05-14 | 2021-11-05 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것을 포함하는 스토리지 장치의 동작 방법 |
US9645749B2 (en) | 2014-05-30 | 2017-05-09 | Sandisk Technologies Llc | Method and system for recharacterizing the storage density of a memory device or a portion thereof |
US8891303B1 (en) | 2014-05-30 | 2014-11-18 | Sandisk Technologies Inc. | Method and system for dynamic word line based configuration of a three-dimensional memory device |
US9496023B2 (en) | 2014-06-05 | 2016-11-15 | Micron Technology, Inc. | Comparison operations on logical representations of values in memory |
US9830999B2 (en) | 2014-06-05 | 2017-11-28 | Micron Technology, Inc. | Comparison operations in memory |
US9711207B2 (en) | 2014-06-05 | 2017-07-18 | Micron Technology, Inc. | Performing logical operations using sensing circuitry |
US9779019B2 (en) | 2014-06-05 | 2017-10-03 | Micron Technology, Inc. | Data storage layout |
US9786335B2 (en) | 2014-06-05 | 2017-10-10 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
US9449674B2 (en) | 2014-06-05 | 2016-09-20 | Micron Technology, Inc. | Performing logical operations using sensing circuitry |
US9711206B2 (en) | 2014-06-05 | 2017-07-18 | Micron Technology, Inc. | Performing logical operations using sensing circuitry |
US9704540B2 (en) | 2014-06-05 | 2017-07-11 | Micron Technology, Inc. | Apparatuses and methods for parity determination using sensing circuitry |
US9910787B2 (en) | 2014-06-05 | 2018-03-06 | Micron Technology, Inc. | Virtual address table |
US10074407B2 (en) | 2014-06-05 | 2018-09-11 | Micron Technology, Inc. | Apparatuses and methods for performing invert operations using sensing circuitry |
US9455020B2 (en) | 2014-06-05 | 2016-09-27 | Micron Technology, Inc. | Apparatuses and methods for performing an exclusive or operation using sensing circuitry |
US9652153B2 (en) | 2014-09-02 | 2017-05-16 | Sandisk Technologies Llc | Process and apparatus to reduce declared capacity of a storage device by reducing a count of logical addresses |
US9582203B2 (en) | 2014-09-02 | 2017-02-28 | Sandisk Technologies Llc | Process and apparatus to reduce declared capacity of a storage device by reducing a range of logical addresses |
US9524105B2 (en) | 2014-09-02 | 2016-12-20 | Sandisk Technologies Llc | Process and apparatus to reduce declared capacity of a storage device by altering an encoding format |
US9582202B2 (en) | 2014-09-02 | 2017-02-28 | Sandisk Technologies Llc | Process and apparatus to reduce declared capacity of a storage device by moving data |
US9519427B2 (en) | 2014-09-02 | 2016-12-13 | Sandisk Technologies Llc | Triggering, at a host system, a process to reduce declared capacity of a storage device |
US9552166B2 (en) | 2014-09-02 | 2017-01-24 | Sandisk Technologies Llc. | Process and apparatus to reduce declared capacity of a storage device by deleting data |
US9563370B2 (en) | 2014-09-02 | 2017-02-07 | Sandisk Technologies Llc | Triggering a process to reduce declared capacity of a storage device |
US9665311B2 (en) | 2014-09-02 | 2017-05-30 | Sandisk Technologies Llc | Process and apparatus to reduce declared capacity of a storage device by making specific logical addresses unavailable |
US9158681B1 (en) | 2014-09-02 | 2015-10-13 | Sandisk Technologies Inc. | Process and apparatus to reduce declared capacity of a storage device by conditionally trimming |
US9524112B2 (en) | 2014-09-02 | 2016-12-20 | Sandisk Technologies Llc | Process and apparatus to reduce declared capacity of a storage device by trimming |
US9582193B2 (en) | 2014-09-02 | 2017-02-28 | Sandisk Technologies Llc | Triggering a process to reduce declared capacity of a storage device in a multi-storage-device storage system |
US9582212B2 (en) | 2014-09-02 | 2017-02-28 | Sandisk Technologies Llc | Notification of trigger condition to reduce declared capacity of a storage device |
US9563362B2 (en) | 2014-09-02 | 2017-02-07 | Sandisk Technologies Llc | Host system and process to reduce declared capacity of a storage device by trimming |
US9582220B2 (en) | 2014-09-02 | 2017-02-28 | Sandisk Technologies Llc | Notification of trigger condition to reduce declared capacity of a storage device in a multi-storage-device storage system |
US9740607B2 (en) | 2014-09-03 | 2017-08-22 | Micron Technology, Inc. | Swap operations in memory |
US9904515B2 (en) | 2014-09-03 | 2018-02-27 | Micron Technology, Inc. | Multiplication operations in memory |
US9589602B2 (en) | 2014-09-03 | 2017-03-07 | Micron Technology, Inc. | Comparison operations in memory |
US9747961B2 (en) | 2014-09-03 | 2017-08-29 | Micron Technology, Inc. | Division operations in memory |
US10068652B2 (en) | 2014-09-03 | 2018-09-04 | Micron Technology, Inc. | Apparatuses and methods for determining population count |
US9847110B2 (en) | 2014-09-03 | 2017-12-19 | Micron Technology, Inc. | Apparatuses and methods for storing a data value in multiple columns of an array corresponding to digits of a vector |
US9898252B2 (en) | 2014-09-03 | 2018-02-20 | Micron Technology, Inc. | Multiplication operations in memory |
US9836218B2 (en) | 2014-10-03 | 2017-12-05 | Micron Technology, Inc. | Computing reduction and prefix sum operations in memory |
US9940026B2 (en) | 2014-10-03 | 2018-04-10 | Micron Technology, Inc. | Multidimensional contiguous memory allocation |
US10163467B2 (en) | 2014-10-16 | 2018-12-25 | Micron Technology, Inc. | Multiple endianness compatibility |
US10147480B2 (en) | 2014-10-24 | 2018-12-04 | Micron Technology, Inc. | Sort operation in memory |
US9779784B2 (en) | 2014-10-29 | 2017-10-03 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
US9747960B2 (en) | 2014-12-01 | 2017-08-29 | Micron Technology, Inc. | Apparatuses and methods for converting a mask to an index |
US10073635B2 (en) | 2014-12-01 | 2018-09-11 | Micron Technology, Inc. | Multiple endianness compatibility |
US10032493B2 (en) | 2015-01-07 | 2018-07-24 | Micron Technology, Inc. | Longest element length determination in memory |
US10061590B2 (en) | 2015-01-07 | 2018-08-28 | Micron Technology, Inc. | Generating and executing a control flow |
US9558064B2 (en) * | 2015-01-28 | 2017-01-31 | Micron Technology, Inc. | Estimating an error rate associated with memory |
US9583163B2 (en) | 2015-02-03 | 2017-02-28 | Micron Technology, Inc. | Loop structure for operations in memory |
WO2016126474A1 (en) | 2015-02-06 | 2016-08-11 | Micron Technology, Inc. | Apparatuses and methods for parallel writing to multiple memory device locations |
WO2016126478A1 (en) | 2015-02-06 | 2016-08-11 | Micron Technology, Inc. | Apparatuses and methods for memory device as a store for program instructions |
WO2016126472A1 (en) | 2015-02-06 | 2016-08-11 | Micron Technology, Inc. | Apparatuses and methods for scatter and gather |
US10522212B2 (en) | 2015-03-10 | 2019-12-31 | Micron Technology, Inc. | Apparatuses and methods for shift decisions |
US9898253B2 (en) | 2015-03-11 | 2018-02-20 | Micron Technology, Inc. | Division operations on variable length elements in memory |
US9741399B2 (en) | 2015-03-11 | 2017-08-22 | Micron Technology, Inc. | Data shift by elements of a vector in memory |
CN107430874B (zh) | 2015-03-12 | 2021-02-02 | 美光科技公司 | 用于数据移动的设备及方法 |
US10146537B2 (en) | 2015-03-13 | 2018-12-04 | Micron Technology, Inc. | Vector population count determination in memory |
US10049054B2 (en) | 2015-04-01 | 2018-08-14 | Micron Technology, Inc. | Virtual register file |
US10140104B2 (en) | 2015-04-14 | 2018-11-27 | Micron Technology, Inc. | Target architecture determination |
US9959923B2 (en) | 2015-04-16 | 2018-05-01 | Micron Technology, Inc. | Apparatuses and methods to reverse data stored in memory |
US9606737B2 (en) | 2015-05-20 | 2017-03-28 | Sandisk Technologies Llc | Variable bit encoding per NAND flash cell to extend life of flash-based storage devices and preserve over-provisioning |
US9639282B2 (en) | 2015-05-20 | 2017-05-02 | Sandisk Technologies Llc | Variable bit encoding per NAND flash cell to improve device endurance and extend life of flash-based storage devices |
US10073786B2 (en) | 2015-05-28 | 2018-09-11 | Micron Technology, Inc. | Apparatuses and methods for compute enabled cache |
US9704541B2 (en) | 2015-06-12 | 2017-07-11 | Micron Technology, Inc. | Simulating access lines |
US9921777B2 (en) | 2015-06-22 | 2018-03-20 | Micron Technology, Inc. | Apparatuses and methods for data transfer from sensing circuitry to a controller |
US9996479B2 (en) | 2015-08-17 | 2018-06-12 | Micron Technology, Inc. | Encryption of executables in computational memory |
US10228990B2 (en) * | 2015-11-12 | 2019-03-12 | Sandisk Technologies Llc | Variable-term error metrics adjustment |
US9946483B2 (en) | 2015-12-03 | 2018-04-17 | Sandisk Technologies Llc | Efficiently managing unmapped blocks to extend life of solid state drive with low over-provisioning |
US9946473B2 (en) | 2015-12-03 | 2018-04-17 | Sandisk Technologies Llc | Efficiently managing unmapped blocks to extend life of solid state drive |
US9905276B2 (en) | 2015-12-21 | 2018-02-27 | Micron Technology, Inc. | Control of sensing components in association with performing operations |
US9952925B2 (en) | 2016-01-06 | 2018-04-24 | Micron Technology, Inc. | Error code calculation on sensing circuitry |
US10048888B2 (en) | 2016-02-10 | 2018-08-14 | Micron Technology, Inc. | Apparatuses and methods for partitioned parallel data movement |
US9892767B2 (en) | 2016-02-12 | 2018-02-13 | Micron Technology, Inc. | Data gathering in memory |
US9971541B2 (en) | 2016-02-17 | 2018-05-15 | Micron Technology, Inc. | Apparatuses and methods for data movement |
US10956439B2 (en) | 2016-02-19 | 2021-03-23 | Micron Technology, Inc. | Data transfer with a bit vector operation device |
US9899070B2 (en) | 2016-02-19 | 2018-02-20 | Micron Technology, Inc. | Modified decode for corner turn |
US9697876B1 (en) | 2016-03-01 | 2017-07-04 | Micron Technology, Inc. | Vertical bit vector shift in memory |
US10732856B2 (en) | 2016-03-03 | 2020-08-04 | Sandisk Technologies Llc | Erase health metric to rank memory portions |
US10432232B2 (en) * | 2016-03-04 | 2019-10-01 | Sandisk Technologies Llc | Multi-type parity bit generation for encoding and decoding |
US10262721B2 (en) | 2016-03-10 | 2019-04-16 | Micron Technology, Inc. | Apparatuses and methods for cache invalidate |
US9997232B2 (en) | 2016-03-10 | 2018-06-12 | Micron Technology, Inc. | Processing in memory (PIM) capable memory device having sensing circuitry performing logic operations |
US10379772B2 (en) | 2016-03-16 | 2019-08-13 | Micron Technology, Inc. | Apparatuses and methods for operations using compressed and decompressed data |
US9910637B2 (en) | 2016-03-17 | 2018-03-06 | Micron Technology, Inc. | Signed division in memory |
US10388393B2 (en) | 2016-03-22 | 2019-08-20 | Micron Technology, Inc. | Apparatus and methods for debugging on a host and memory device |
US10120740B2 (en) | 2016-03-22 | 2018-11-06 | Micron Technology, Inc. | Apparatus and methods for debugging on a memory device |
US11074988B2 (en) | 2016-03-22 | 2021-07-27 | Micron Technology, Inc. | Apparatus and methods for debugging on a host and memory device |
US10977033B2 (en) | 2016-03-25 | 2021-04-13 | Micron Technology, Inc. | Mask patterns generated in memory from seed vectors |
US10474581B2 (en) | 2016-03-25 | 2019-11-12 | Micron Technology, Inc. | Apparatuses and methods for cache operations |
US10074416B2 (en) | 2016-03-28 | 2018-09-11 | Micron Technology, Inc. | Apparatuses and methods for data movement |
US10430244B2 (en) | 2016-03-28 | 2019-10-01 | Micron Technology, Inc. | Apparatuses and methods to determine timing of operations |
US10453502B2 (en) | 2016-04-04 | 2019-10-22 | Micron Technology, Inc. | Memory bank power coordination including concurrently performing a memory operation in a selected number of memory regions |
US10607665B2 (en) | 2016-04-07 | 2020-03-31 | Micron Technology, Inc. | Span mask generation |
US9818459B2 (en) | 2016-04-19 | 2017-11-14 | Micron Technology, Inc. | Invert operations using sensing circuitry |
US10153008B2 (en) | 2016-04-20 | 2018-12-11 | Micron Technology, Inc. | Apparatuses and methods for performing corner turn operations using sensing circuitry |
US9659605B1 (en) | 2016-04-20 | 2017-05-23 | Micron Technology, Inc. | Apparatuses and methods for performing corner turn operations using sensing circuitry |
US10042608B2 (en) | 2016-05-11 | 2018-08-07 | Micron Technology, Inc. | Signed division in memory |
US9659610B1 (en) | 2016-05-18 | 2017-05-23 | Micron Technology, Inc. | Apparatuses and methods for shifting data |
US10049707B2 (en) | 2016-06-03 | 2018-08-14 | Micron Technology, Inc. | Shifting data |
US10387046B2 (en) | 2016-06-22 | 2019-08-20 | Micron Technology, Inc. | Bank to bank data transfer |
US9679661B1 (en) * | 2016-06-28 | 2017-06-13 | Sandisk Technologies Llc | Non-volatile storage system with self-test for read performance enhancement feature setup |
US10037785B2 (en) | 2016-07-08 | 2018-07-31 | Micron Technology, Inc. | Scan chain operation in sensing circuitry |
US10388360B2 (en) | 2016-07-19 | 2019-08-20 | Micron Technology, Inc. | Utilization of data stored in an edge section of an array |
US10387299B2 (en) | 2016-07-20 | 2019-08-20 | Micron Technology, Inc. | Apparatuses and methods for transferring data |
US10733089B2 (en) | 2016-07-20 | 2020-08-04 | Micron Technology, Inc. | Apparatuses and methods for write address tracking |
US9767864B1 (en) | 2016-07-21 | 2017-09-19 | Micron Technology, Inc. | Apparatuses and methods for storing a data value in a sensing circuitry element |
US9972367B2 (en) | 2016-07-21 | 2018-05-15 | Micron Technology, Inc. | Shifting data in sensing circuitry |
US10303632B2 (en) | 2016-07-26 | 2019-05-28 | Micron Technology, Inc. | Accessing status information |
US10468087B2 (en) | 2016-07-28 | 2019-11-05 | Micron Technology, Inc. | Apparatuses and methods for operations in a self-refresh state |
US9990181B2 (en) | 2016-08-03 | 2018-06-05 | Micron Technology, Inc. | Apparatuses and methods for random number generation |
US11029951B2 (en) | 2016-08-15 | 2021-06-08 | Micron Technology, Inc. | Smallest or largest value element determination |
US9672940B1 (en) | 2016-08-18 | 2017-06-06 | Sandisk Technologies Llc | Non-volatile memory with fast read process |
US10606587B2 (en) | 2016-08-24 | 2020-03-31 | Micron Technology, Inc. | Apparatus and methods related to microcode instructions indicating instruction types |
US10466928B2 (en) | 2016-09-15 | 2019-11-05 | Micron Technology, Inc. | Updating a register in memory |
US10387058B2 (en) | 2016-09-29 | 2019-08-20 | Micron Technology, Inc. | Apparatuses and methods to change data category values |
US10014034B2 (en) | 2016-10-06 | 2018-07-03 | Micron Technology, Inc. | Shifting data in sensing circuitry |
US10529409B2 (en) | 2016-10-13 | 2020-01-07 | Micron Technology, Inc. | Apparatuses and methods to perform logical operations using sensing circuitry |
US9805772B1 (en) | 2016-10-20 | 2017-10-31 | Micron Technology, Inc. | Apparatuses and methods to selectively perform logical operations |
US10373666B2 (en) | 2016-11-08 | 2019-08-06 | Micron Technology, Inc. | Apparatuses and methods for compute components formed over an array of memory cells |
US10423353B2 (en) | 2016-11-11 | 2019-09-24 | Micron Technology, Inc. | Apparatuses and methods for memory alignment |
US9761300B1 (en) | 2016-11-22 | 2017-09-12 | Micron Technology, Inc. | Data shift apparatuses and methods |
US10402340B2 (en) | 2017-02-21 | 2019-09-03 | Micron Technology, Inc. | Memory array page table walk |
US10268389B2 (en) | 2017-02-22 | 2019-04-23 | Micron Technology, Inc. | Apparatuses and methods for in-memory operations |
US10403352B2 (en) | 2017-02-22 | 2019-09-03 | Micron Technology, Inc. | Apparatuses and methods for compute in data path |
US10838899B2 (en) | 2017-03-21 | 2020-11-17 | Micron Technology, Inc. | Apparatuses and methods for in-memory data switching networks |
US10185674B2 (en) | 2017-03-22 | 2019-01-22 | Micron Technology, Inc. | Apparatus and methods for in data path compute operations |
US11222260B2 (en) | 2017-03-22 | 2022-01-11 | Micron Technology, Inc. | Apparatuses and methods for operating neural networks |
US10049721B1 (en) | 2017-03-27 | 2018-08-14 | Micron Technology, Inc. | Apparatuses and methods for in-memory operations |
US10043570B1 (en) | 2017-04-17 | 2018-08-07 | Micron Technology, Inc. | Signed element compare in memory |
US10147467B2 (en) | 2017-04-17 | 2018-12-04 | Micron Technology, Inc. | Element value comparison in memory |
US9997212B1 (en) | 2017-04-24 | 2018-06-12 | Micron Technology, Inc. | Accessing data in memory |
US10942843B2 (en) | 2017-04-25 | 2021-03-09 | Micron Technology, Inc. | Storing data elements of different lengths in respective adjacent rows or columns according to memory shapes |
US10236038B2 (en) | 2017-05-15 | 2019-03-19 | Micron Technology, Inc. | Bank to bank data transfer |
US10068664B1 (en) | 2017-05-19 | 2018-09-04 | Micron Technology, Inc. | Column repair in memory |
US10013197B1 (en) | 2017-06-01 | 2018-07-03 | Micron Technology, Inc. | Shift skip |
US10152271B1 (en) | 2017-06-07 | 2018-12-11 | Micron Technology, Inc. | Data replication |
US10262701B2 (en) | 2017-06-07 | 2019-04-16 | Micron Technology, Inc. | Data transfer between subarrays in memory |
US10318168B2 (en) | 2017-06-19 | 2019-06-11 | Micron Technology, Inc. | Apparatuses and methods for simultaneous in data path compute operations |
KR20190001417A (ko) * | 2017-06-27 | 2019-01-04 | 에스케이하이닉스 주식회사 | 컨트롤러 및 그 동작 방법 |
KR102326659B1 (ko) * | 2017-07-19 | 2021-11-16 | 삼성전자주식회사 | 비휘발성 메모리의 ecc 제어 방법 및 이를 수행하는 메모리 시스템 |
US10162005B1 (en) | 2017-08-09 | 2018-12-25 | Micron Technology, Inc. | Scan chain operations |
US10534553B2 (en) | 2017-08-30 | 2020-01-14 | Micron Technology, Inc. | Memory array accessibility |
US10416927B2 (en) | 2017-08-31 | 2019-09-17 | Micron Technology, Inc. | Processing in memory |
US10346092B2 (en) | 2017-08-31 | 2019-07-09 | Micron Technology, Inc. | Apparatuses and methods for in-memory operations using timing circuitry |
US10741239B2 (en) | 2017-08-31 | 2020-08-11 | Micron Technology, Inc. | Processing in memory device including a row address strobe manager |
US10409739B2 (en) | 2017-10-24 | 2019-09-10 | Micron Technology, Inc. | Command selection policy |
US10522210B2 (en) | 2017-12-14 | 2019-12-31 | Micron Technology, Inc. | Apparatuses and methods for subarray addressing |
US10332586B1 (en) | 2017-12-19 | 2019-06-25 | Micron Technology, Inc. | Apparatuses and methods for subrow addressing |
US10614875B2 (en) | 2018-01-30 | 2020-04-07 | Micron Technology, Inc. | Logical operations using memory cells |
US11194477B2 (en) | 2018-01-31 | 2021-12-07 | Micron Technology, Inc. | Determination of a match between data values stored by three or more arrays |
US10437557B2 (en) | 2018-01-31 | 2019-10-08 | Micron Technology, Inc. | Determination of a match between data values stored by several arrays |
US10725696B2 (en) | 2018-04-12 | 2020-07-28 | Micron Technology, Inc. | Command selection policy with read priority |
US10440341B1 (en) | 2018-06-07 | 2019-10-08 | Micron Technology, Inc. | Image processor formed in an array of memory cells |
US10795810B2 (en) * | 2018-09-10 | 2020-10-06 | Micron Technology, Inc. | Wear-leveling scheme for memory subsystems |
US11175915B2 (en) | 2018-10-10 | 2021-11-16 | Micron Technology, Inc. | Vector registers implemented in memory |
US10769071B2 (en) | 2018-10-10 | 2020-09-08 | Micron Technology, Inc. | Coherent memory access |
US10483978B1 (en) | 2018-10-16 | 2019-11-19 | Micron Technology, Inc. | Memory device processing |
US11184446B2 (en) | 2018-12-05 | 2021-11-23 | Micron Technology, Inc. | Methods and apparatus for incentivizing participation in fog networks |
US10867655B1 (en) | 2019-07-08 | 2020-12-15 | Micron Technology, Inc. | Methods and apparatus for dynamically adjusting performance of partitioned memory |
US11360768B2 (en) | 2019-08-14 | 2022-06-14 | Micron Technolgy, Inc. | Bit string operations in memory |
US11436071B2 (en) * | 2019-08-28 | 2022-09-06 | Micron Technology, Inc. | Error control for content-addressable memory |
KR20210051803A (ko) | 2019-10-31 | 2021-05-10 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 컨트롤러 |
US11449577B2 (en) | 2019-11-20 | 2022-09-20 | Micron Technology, Inc. | Methods and apparatus for performing video processing matrix operations within a memory array |
US11853385B2 (en) | 2019-12-05 | 2023-12-26 | Micron Technology, Inc. | Methods and apparatus for performing diversity matrix operations within a memory array |
DE102020202632A1 (de) | 2020-03-02 | 2021-09-02 | Robert Bosch Gesellschaft mit beschränkter Haftung | Inferenzberechnung für neuronale Netzwerke mit Schutz gegen Speicherfehler |
CN113495675B (zh) | 2020-04-01 | 2023-08-11 | 长鑫存储技术有限公司 | 读写方法及存储器装置 |
US11227641B1 (en) | 2020-07-21 | 2022-01-18 | Micron Technology, Inc. | Arithmetic operations in memory |
US11656938B2 (en) * | 2020-09-28 | 2023-05-23 | Micron Technology, Inc. | Preemptive read verification after hardware write back |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5974564A (en) * | 1997-07-31 | 1999-10-26 | Micron Electronics, Inc. | Method for remapping defective memory bit sets to non-defective memory bit sets |
CN1504896A (zh) * | 2002-10-28 | 2004-06-16 | 三因迪斯克公司 | 在非易失性存储器系统中执行块高速缓冲存储的方法和装置 |
US20060149902A1 (en) * | 2005-01-06 | 2006-07-06 | Samsung Electronics Co., Ltd. | Apparatus and method for storing data in nonvolatile cache memory considering update ratio |
US20090063914A1 (en) * | 2007-08-27 | 2009-03-05 | Comtech Aha Corporation | Content-Addressable Memories and State Machines for Performing Three-Byte Matches and Secondary Matches, and for Providing Error Protection |
Family Cites Families (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4335459A (en) | 1980-05-20 | 1982-06-15 | Miller Richard L | Single chip random access memory with increased yield and reliability |
JP2617026B2 (ja) | 1989-12-22 | 1997-06-04 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 障害余裕性メモリ・システム |
JP2575557B2 (ja) | 1990-11-13 | 1997-01-29 | インターナショナル・ビジネス・マシーンズ・コーポレイション | スーパーコンピユータシステム |
US5418796A (en) | 1991-03-26 | 1995-05-23 | International Business Machines Corporation | Synergistic multiple bit error correction for memory of array chips |
KR970008188B1 (ko) | 1993-04-08 | 1997-05-21 | 가부시끼가이샤 히다찌세이사꾸쇼 | 플래시메모리의 제어방법 및 그것을 사용한 정보처리장치 |
US5465262A (en) | 1994-01-28 | 1995-11-07 | International Business Machines Corporation | Method and structure for providing error correction code and automatic parity sensing |
JPH0916479A (ja) * | 1995-06-29 | 1997-01-17 | Fuji Electric Co Ltd | 多機能保護リレー |
US5838614A (en) * | 1995-07-31 | 1998-11-17 | Lexar Microsystems, Inc. | Identification and verification of a sector within a block of mass storage flash memory |
US5867642A (en) | 1995-08-10 | 1999-02-02 | Dell Usa, L.P. | System and method to coherently and dynamically remap an at-risk memory area by simultaneously writing two memory areas |
JPH09128302A (ja) * | 1995-11-01 | 1997-05-16 | Fujitsu Ltd | 不揮発性メモリへのデータアクセス方法 |
US5764878A (en) | 1996-02-07 | 1998-06-09 | Lsi Logic Corporation | Built-in self repair system for embedded memories |
US5706292A (en) | 1996-04-25 | 1998-01-06 | Micron Technology, Inc. | Layout for a semiconductor memory device having redundant elements |
US6006306A (en) * | 1997-07-02 | 1999-12-21 | Xylan Corporation | Integrated circuit with stage-implemented content-addressable memory cell |
TW446955B (en) | 1998-10-30 | 2001-07-21 | Siemens Ag | The read/write memory with self-testing device and its associated test method |
US6067262A (en) | 1998-12-11 | 2000-05-23 | Lsi Logic Corporation | Redundancy analysis for embedded memories with built-in self test and built-in self repair |
US6651202B1 (en) | 1999-01-26 | 2003-11-18 | Lsi Logic Corporation | Built-in self repair circuitry utilizing permanent record of defects |
AU7313600A (en) | 1999-09-17 | 2001-04-24 | Hitachi Limited | Storage where the number of error corrections is recorded |
US6467048B1 (en) | 1999-10-07 | 2002-10-15 | Compaq Information Technologies Group, L.P. | Apparatus, method and system for using cache memory as fail-over memory |
US6848070B1 (en) | 1999-11-24 | 2005-01-25 | Intel Corporation | Error correcting code scheme |
JP4165990B2 (ja) * | 1999-12-20 | 2008-10-15 | Tdk株式会社 | メモリコントローラ及びメモリコントローラを備えるフラッシュメモリシステム、並びに、フラッシュメモリへのデータの書き込み方法 |
US6236602B1 (en) * | 2000-05-25 | 2001-05-22 | Robert Patti | Dynamic configuration of storage arrays |
US6941505B2 (en) | 2000-09-12 | 2005-09-06 | Hitachi, Ltd. | Data processing system and data processing method |
US6525966B1 (en) * | 2000-12-06 | 2003-02-25 | Advanced Micro Devices, Inc. | Method and apparatus for adjusting on-chip current reference for EEPROM sensing |
JP4059472B2 (ja) * | 2001-08-09 | 2008-03-12 | 株式会社ルネサステクノロジ | メモリカード及びメモリコントローラ |
US7120068B2 (en) | 2002-07-29 | 2006-10-10 | Micron Technology, Inc. | Column/row redundancy architecture using latches programmed from a look up table |
US6907505B2 (en) * | 2002-07-31 | 2005-06-14 | Hewlett-Packard Development Company, L.P. | Immediately available, statically allocated, full-logical-unit copy with a transient, snapshot-copy-like intermediate stage |
DE60222891T2 (de) * | 2002-08-13 | 2008-07-24 | Stmicroelectronics S.R.L., Agrate Brianza | Nichtflüchtige Speichervorrichtung und Selbstreparatur-Verfahren |
US20050120265A1 (en) | 2003-12-02 | 2005-06-02 | Pline Steven L. | Data storage system with error correction code and replaceable defective memory |
DE102004027423A1 (de) | 2004-06-04 | 2006-07-20 | Infineon Technologies Ag | Speicherschaltung mit redundanten Speicherbereichen |
KR100622349B1 (ko) | 2004-08-04 | 2006-09-14 | 삼성전자주식회사 | 불량 블록 관리 기능을 가지는 플레시 메모리 장치 및플레시 메모리 장치의 불량 블록 관리 방법. |
US7519875B2 (en) | 2004-08-20 | 2009-04-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method and apparatus for enabling a user to determine whether a defective location in a memory device has been remapped to a redundant memory portion |
US7644323B2 (en) | 2004-11-30 | 2010-01-05 | Industrial Technology Research Institute | Method and apparatus of build-in self-diagnosis and repair in a memory with syndrome identification |
JP2006179101A (ja) | 2004-12-22 | 2006-07-06 | Fujitsu Ltd | 半導体記憶装置 |
US7346815B2 (en) | 2005-03-31 | 2008-03-18 | Intel Corporation | Mechanism for implementing redundancy to mask failing SRAM |
US8060774B2 (en) | 2005-06-24 | 2011-11-15 | Google Inc. | Memory systems and memory modules |
US20070006048A1 (en) | 2005-06-29 | 2007-01-04 | Intel Corporation | Method and apparatus for predicting memory failure in a memory system |
US7233054B1 (en) | 2005-11-29 | 2007-06-19 | Korea Institute Of Science And Technology | Phase change material and non-volatile memory device using the same |
EP1881505A1 (en) * | 2006-07-20 | 2008-01-23 | STMicroelectronics S.r.l. | Memory device with embedded microprocessor for autonomously searching and repairing failures |
US7757135B2 (en) | 2006-09-11 | 2010-07-13 | Mentor Graphics Corporation | Method and apparatus for storing and distributing memory repair information |
US7661004B2 (en) | 2006-10-30 | 2010-02-09 | Research In Motion Limited | Automatic power-up portable electronic device based on time-dependent event |
WO2008061558A1 (en) * | 2006-11-21 | 2008-05-29 | Freescale Semiconductor, Inc. | Memory system with ecc-unit and further processing arrangement |
JP4301301B2 (ja) * | 2007-02-05 | 2009-07-22 | ソニー株式会社 | 不揮発性半導体記憶装置およびその管理方法 |
US7515469B1 (en) * | 2007-09-27 | 2009-04-07 | Atmel Corporation | Column redundancy RAM for dynamic bit replacement in FLASH memory |
US20090132876A1 (en) | 2007-11-19 | 2009-05-21 | Ronald Ernest Freking | Maintaining Error Statistics Concurrently Across Multiple Memory Ranks |
US8195978B2 (en) | 2008-05-16 | 2012-06-05 | Fusion-IO. Inc. | Apparatus, system, and method for detecting and replacing failed data storage |
KR20100016987A (ko) * | 2008-08-05 | 2010-02-16 | 삼성전자주식회사 | 상 변화 메모리를 포함하는 컴퓨팅 시스템 |
KR101019986B1 (ko) | 2008-10-10 | 2011-03-09 | 주식회사 하이닉스반도체 | 성장 방식에 의해 형성되는 콘택 구조를 절연시키는 절연막을 포함하는 상변화 메모리 소자, 이를 포함하는 반도체 소자, 및 그들의 제조방법 |
US7996736B2 (en) | 2008-10-26 | 2011-08-09 | Sandisk 3D Llc | Bad page marking strategy for fast readout in memory |
US7908530B2 (en) | 2009-03-16 | 2011-03-15 | Faraday Technology Corp. | Memory module and on-line build-in self-test method thereof for enhancing memory system reliability |
-
2009
- 2009-06-30 US US12/494,994 patent/US8412987B2/en active Active
-
2010
- 2010-05-28 KR KR1020100050111A patent/KR101647845B1/ko active IP Right Grant
- 2010-06-15 TW TW099119459A patent/TWI484330B/zh active
- 2010-06-29 CN CN201010219745.9A patent/CN101937374B/zh active Active
- 2010-06-29 JP JP2010148353A patent/JP5996838B2/ja active Active
- 2010-06-30 DE DE102010030745.9A patent/DE102010030745B4/de active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5974564A (en) * | 1997-07-31 | 1999-10-26 | Micron Electronics, Inc. | Method for remapping defective memory bit sets to non-defective memory bit sets |
CN1504896A (zh) * | 2002-10-28 | 2004-06-16 | 三因迪斯克公司 | 在非易失性存储器系统中执行块高速缓冲存储的方法和装置 |
US20060149902A1 (en) * | 2005-01-06 | 2006-07-06 | Samsung Electronics Co., Ltd. | Apparatus and method for storing data in nonvolatile cache memory considering update ratio |
US20090063914A1 (en) * | 2007-08-27 | 2009-03-05 | Comtech Aha Corporation | Content-Addressable Memories and State Machines for Performing Three-Byte Matches and Secondary Matches, and for Providing Error Protection |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108630269A (zh) * | 2012-12-06 | 2018-10-09 | 美光科技公司 | 基于错误校正而设定默认读取信号 |
CN103076996B (zh) * | 2013-01-08 | 2016-08-03 | 深圳市硅格半导体有限公司 | Pcram控制方法及系统 |
CN103076996A (zh) * | 2013-01-08 | 2013-05-01 | 深圳市硅格半导体有限公司 | Pcram控制方法及系统 |
CN105339909A (zh) * | 2013-05-29 | 2016-02-17 | 微软技术许可有限责任公司 | 存储系统和有别名的存储器 |
CN105339909B (zh) * | 2013-05-29 | 2018-08-24 | 微软技术许可有限责任公司 | 存储系统和有别名的存储器 |
US10216437B2 (en) | 2013-05-29 | 2019-02-26 | Microsoft Technology Licensing, Llc | Storage systems and aliased memory |
CN105874434A (zh) * | 2014-01-02 | 2016-08-17 | 高通股份有限公司 | 比特重映射系统 |
CN110462592A (zh) * | 2017-03-29 | 2019-11-15 | 美光科技公司 | 用于多维存储器的选择性错误率信息 |
CN109767801B (zh) * | 2017-11-10 | 2023-02-24 | 爱思开海力士有限公司 | 存储器控制器、包括其的半导体存储系统以及驱动方法 |
CN109767801A (zh) * | 2017-11-10 | 2019-05-17 | 爱思开海力士有限公司 | 存储器控制器、包括其的半导体存储系统以及驱动方法 |
CN110021333B (zh) * | 2017-11-23 | 2023-07-04 | 三星电子株式会社 | 存储器装置和存储器系统 |
CN110021333A (zh) * | 2017-11-23 | 2019-07-16 | 三星电子株式会社 | 存储器装置和存储器系统 |
CN110910807B (zh) * | 2018-09-17 | 2023-05-12 | 苹果公司 | 用于像素内存储器显示器的有缺陷的存储器的校正 |
CN110910807A (zh) * | 2018-09-17 | 2020-03-24 | 苹果公司 | 用于像素内存储器显示器的有缺陷的存储器的校正 |
CN111694690A (zh) * | 2019-03-15 | 2020-09-22 | 英韧科技(上海)有限公司 | 具有内存映射的纠错码架构的系统和方法 |
CN113297014A (zh) * | 2020-02-22 | 2021-08-24 | 北京希姆计算科技有限公司 | 待测内存容量的识别方法及装置、电子设备及存储介质 |
CN113297014B (zh) * | 2020-02-22 | 2024-03-08 | 广州希姆半导体科技有限公司 | 待测内存容量的识别方法及装置、电子设备及存储介质 |
WO2021196621A1 (zh) * | 2020-04-01 | 2021-10-07 | 长鑫存储技术有限公司 | 读写方法及存储器装置 |
US11527301B2 (en) | 2020-04-01 | 2022-12-13 | Changxin Memory Technologies, Inc. | Method for reading and writing and memory device |
US11869615B2 (en) | 2020-04-01 | 2024-01-09 | Changxin Memory Technologies, Inc. | Method for reading and writing and memory device |
US11881240B2 (en) | 2020-04-01 | 2024-01-23 | Changxin Memory Technologies, Inc. | Systems and methods for read/write of memory devices and error correction |
US11894088B2 (en) | 2020-04-01 | 2024-02-06 | Changxin Memory Technologies, Inc. | Method for reading and writing and memory device |
US11899971B2 (en) | 2020-04-01 | 2024-02-13 | Changxin Memory Technologies, Inc. | Method for reading and writing and memory device |
US11914479B2 (en) | 2020-04-01 | 2024-02-27 | Changxin Memory Technologies, Inc. | Method for reading and writing and memory device |
US11922023B2 (en) | 2020-04-01 | 2024-03-05 | Changxin Memory Technologies, Inc. | Read/write method and memory device |
WO2021196661A1 (zh) * | 2020-04-01 | 2021-10-07 | 长鑫存储技术有限公司 | 读写方法及存储器装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20110001882A (ko) | 2011-01-06 |
US8412987B2 (en) | 2013-04-02 |
TW201126329A (en) | 2011-08-01 |
KR101647845B1 (ko) | 2016-08-11 |
JP5996838B2 (ja) | 2016-09-21 |
TWI484330B (zh) | 2015-05-11 |
DE102010030745A1 (de) | 2011-01-05 |
US20100332895A1 (en) | 2010-12-30 |
CN101937374B (zh) | 2015-07-01 |
JP2011040051A (ja) | 2011-02-24 |
DE102010030745B4 (de) | 2015-02-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101937374A (zh) | 存储存储器重映射信息的非易失性存储器 | |
CN101937725A (zh) | 比特错误阈值和内容可寻址存储器以寻址重映射存储装置 | |
CN101937373A (zh) | 比特错误阈值和重映射存储装置 | |
US8799717B2 (en) | Hardwired remapped memory | |
KR101343262B1 (ko) | 동시 판독 및 기록 메모리 동작을 수행하는 방법 및 장치 | |
CN103793182A (zh) | 可扩展存储保护 | |
CN102549554A (zh) | 基于条带的存储器操作 | |
JP5364807B2 (ja) | メモリコントローラ及び不揮発性記憶装置 | |
US9003153B2 (en) | Method of storing blocks of data in a plurality of memory devices in a redundant manner, a memory controller and a memory system | |
CN103853582A (zh) | 闪存更新方法以及闪存控制器 | |
US8572466B2 (en) | Apparatuses, systems, devices, and methods of replacing at least partially non-functional portions of memory | |
WO2013090520A1 (en) | Dynamic error handling using parity and redundant rows | |
US20170154656A1 (en) | Data programming method and memory storage device | |
US8161334B1 (en) | Externally maintained remap information | |
CN107515731A (zh) | 一种基于固态盘的进化存储系统及其工作方法 | |
CN103678162B (zh) | 系统数据储存方法、存储器控制器与存储器储存装置 | |
US20130036259A1 (en) | Solid state drive and data storing method thereof | |
US8533549B2 (en) | Memory system and computer system | |
US10735030B2 (en) | Re-encoding data associated with failed memory devices | |
US20130124778A1 (en) | Method of storing host data and meta data in a nand memory, a memory controller and a memory system | |
US20090138656A1 (en) | Method of skipping synchronization process for initialization of RAID1 device | |
US20220130464A1 (en) | Memory device supporting interleaved operations and memory system including the same | |
KR20110074644A (ko) | 불휘발성 반도체 메모리 장치 | |
CN103389943A (zh) | 控制装置、存储装置及存储控制方法 | |
JP2008102693A (ja) | メモリコントローラ及びフラッシュメモリシステム、並びにフラッシュメモリの制御方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: MICRON TECHNOLOGY, INC. Free format text: FORMER OWNER: NUMONYX B.V. Effective date: 20120528 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20120528 Address after: Ada van Applicant after: Micron Technology, INC. Address before: Swiss Rolle Applicant before: Numonyx B.v. |
|
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: Ada van Applicant after: Micron Technology, Inc. Address before: Ada van Applicant before: Micron Technology, INC. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: MICRON TECHNOLOGY, INC. TO: MICRON TECHNOLOGY, INC. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |