CN101903992B - 用于平面独立栅或环栅晶体管的改进的制造方法 - Google Patents

用于平面独立栅或环栅晶体管的改进的制造方法 Download PDF

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Publication number
CN101903992B
CN101903992B CN2008801218961A CN200880121896A CN101903992B CN 101903992 B CN101903992 B CN 101903992B CN 2008801218961 A CN2008801218961 A CN 2008801218961A CN 200880121896 A CN200880121896 A CN 200880121896A CN 101903992 B CN101903992 B CN 101903992B
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Expired - Fee Related
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CN2008801218961A
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English (en)
Chinese (zh)
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CN101903992A (zh
Inventor
阿诺·普罗德巴斯克
菲利普·科罗内尔
斯特凡纳·德诺尔曼
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STMicroelectronics Crolles 2 SAS
Koninklijke Philips NV
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STMicroelectronics Crolles 2 SAS
Koninklijke Philips Electronics NV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66484—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with multiple gate, at least one gate being an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
CN2008801218961A 2007-12-21 2008-12-18 用于平面独立栅或环栅晶体管的改进的制造方法 Expired - Fee Related CN101903992B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP07291587.9 2007-12-21
EP07291587 2007-12-21
PCT/IB2008/055418 WO2009081345A1 (fr) 2007-12-21 2008-12-18 Procédé de fabrication amélioré pour des transistors à grille indépendante ou à grille enveloppante

Publications (2)

Publication Number Publication Date
CN101903992A CN101903992A (zh) 2010-12-01
CN101903992B true CN101903992B (zh) 2012-06-27

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CN2008801218961A Expired - Fee Related CN101903992B (zh) 2007-12-21 2008-12-18 用于平面独立栅或环栅晶体管的改进的制造方法

Country Status (4)

Country Link
US (1) US7923315B2 (fr)
EP (1) EP2235745A1 (fr)
CN (1) CN101903992B (fr)
WO (1) WO2009081345A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2995720B1 (fr) * 2012-09-18 2014-10-24 Commissariat Energie Atomique Procede de realisation d'un dispositif a effet de champ a double grille a grilles independantes
US9136343B2 (en) * 2013-01-24 2015-09-15 Intel Corporation Deep gate-all-around semiconductor device having germanium or group III-V active layer
US9391163B2 (en) 2014-10-03 2016-07-12 International Business Machines Corporation Stacked planar double-gate lamellar field-effect transistor
US9281379B1 (en) 2014-11-19 2016-03-08 International Business Machines Corporation Gate-all-around fin device
US9496338B2 (en) * 2015-03-17 2016-11-15 International Business Machines Corporation Wire-last gate-all-around nanowire FET
KR102476143B1 (ko) * 2016-02-26 2022-12-12 삼성전자주식회사 반도체 장치
US10008497B2 (en) * 2016-11-29 2018-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
CN106847822B (zh) * 2017-03-08 2018-11-16 长江存储科技有限责任公司 3d nand存储器件、制造方法以及台阶校准方法
KR102400558B1 (ko) * 2017-04-05 2022-05-20 삼성전자주식회사 반도체 소자
US10170304B1 (en) 2017-10-25 2019-01-01 Globalfoundries Inc. Self-aligned nanotube structures
EP3731281A1 (fr) * 2019-04-24 2020-10-28 Nxp B.V. Dispositif semiconducteur latéral doté d'une source surélevée et d'un drain et procédé de fabrication correspondant
US11362096B2 (en) 2019-12-27 2022-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
DE102020110792B4 (de) * 2019-12-27 2022-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtungsstruktur mit Finnenstruktur und mehreren Nanostrukturen und Verfahren zum Bilden derselben

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
JP3460863B2 (ja) * 1993-09-17 2003-10-27 三菱電機株式会社 半導体装置の製造方法
JPH118390A (ja) * 1997-06-18 1999-01-12 Mitsubishi Electric Corp 半導体装置及びその製造方法
FR2845201B1 (fr) * 2002-09-27 2005-08-05 St Microelectronics Sa Procede de formation de portions d'un materiau compose a l'interieur d'une cavite et circuit electrique incorporant des portions de materiau compose ainsi obtenues
KR100481209B1 (ko) * 2002-10-01 2005-04-08 삼성전자주식회사 다중 채널을 갖는 모스 트랜지스터 및 그 제조방법
FR2853454B1 (fr) * 2003-04-03 2005-07-15 St Microelectronics Sa Transistor mos haute densite
KR100550343B1 (ko) * 2003-11-21 2006-02-08 삼성전자주식회사 다중 채널 모오스 트랜지스터를 포함하는 반도체 장치의제조 방법
KR100625177B1 (ko) * 2004-05-25 2006-09-20 삼성전자주식회사 멀티-브리지 채널형 모오스 트랜지스터의 제조 방법
KR100618831B1 (ko) * 2004-06-08 2006-09-08 삼성전자주식회사 게이트 올 어라운드형 반도체소자 및 그 제조방법
FR2897201B1 (fr) * 2006-02-03 2008-04-25 Stmicroelectronics Crolles Sas Dispositif de transistor a doubles grilles planaires et procede de fabrication.
FR2928029B1 (fr) * 2008-02-27 2011-04-08 St Microelectronics Crolles 2 Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant.

Also Published As

Publication number Publication date
CN101903992A (zh) 2010-12-01
US7923315B2 (en) 2011-04-12
WO2009081345A1 (fr) 2009-07-02
US20110014769A1 (en) 2011-01-20
EP2235745A1 (fr) 2010-10-06

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Granted publication date: 20120627

Termination date: 20131218