FR2845201B1 - Procede de formation de portions d'un materiau compose a l'interieur d'une cavite et circuit electrique incorporant des portions de materiau compose ainsi obtenues - Google Patents

Procede de formation de portions d'un materiau compose a l'interieur d'une cavite et circuit electrique incorporant des portions de materiau compose ainsi obtenues

Info

Publication number
FR2845201B1
FR2845201B1 FR0211989A FR0211989A FR2845201B1 FR 2845201 B1 FR2845201 B1 FR 2845201B1 FR 0211989 A FR0211989 A FR 0211989A FR 0211989 A FR0211989 A FR 0211989A FR 2845201 B1 FR2845201 B1 FR 2845201B1
Authority
FR
France
Prior art keywords
portions
compound
cavity
formation
electric circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0211989A
Other languages
English (en)
Other versions
FR2845201A1 (fr
Inventor
Philippe Coronel
Christophe Regnier
Francois Wacquant
Thomas Skotnicki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0211989A priority Critical patent/FR2845201B1/fr
Priority to US10/657,514 priority patent/US7188411B2/en
Publication of FR2845201A1 publication Critical patent/FR2845201A1/fr
Application granted granted Critical
Publication of FR2845201B1 publication Critical patent/FR2845201B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49158—Manufacturing circuit on or in base with molding of insulated base
    • Y10T29/4916—Simultaneous circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base
    • Y10T29/49167—Manufacturing circuit on or in base by forming conductive walled aperture in base with deforming of conductive path
FR0211989A 2002-09-27 2002-09-27 Procede de formation de portions d'un materiau compose a l'interieur d'une cavite et circuit electrique incorporant des portions de materiau compose ainsi obtenues Expired - Fee Related FR2845201B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0211989A FR2845201B1 (fr) 2002-09-27 2002-09-27 Procede de formation de portions d'un materiau compose a l'interieur d'une cavite et circuit electrique incorporant des portions de materiau compose ainsi obtenues
US10/657,514 US7188411B2 (en) 2002-09-27 2003-09-08 Process for forming portions of a compound material inside a cavity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0211989A FR2845201B1 (fr) 2002-09-27 2002-09-27 Procede de formation de portions d'un materiau compose a l'interieur d'une cavite et circuit electrique incorporant des portions de materiau compose ainsi obtenues

Publications (2)

Publication Number Publication Date
FR2845201A1 FR2845201A1 (fr) 2004-04-02
FR2845201B1 true FR2845201B1 (fr) 2005-08-05

Family

ID=31985291

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0211989A Expired - Fee Related FR2845201B1 (fr) 2002-09-27 2002-09-27 Procede de formation de portions d'un materiau compose a l'interieur d'une cavite et circuit electrique incorporant des portions de materiau compose ainsi obtenues

Country Status (2)

Country Link
US (1) US7188411B2 (fr)
FR (1) FR2845201B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1480266A3 (fr) * 2003-05-20 2006-03-15 STMicroelectronics S.A. Procédé de réalisation d'un circuit électronique intégré comprenant des composants superposés et circuit électronique intégré ainsi obtenu
WO2009081345A1 (fr) * 2007-12-21 2009-07-02 Nxp B.V. Procédé de fabrication amélioré pour des transistors à grille indépendante ou à grille enveloppante
FR2928028B1 (fr) * 2008-02-27 2011-07-15 St Microelectronics Crolles 2 Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant.
FR2928029B1 (fr) * 2008-02-27 2011-04-08 St Microelectronics Crolles 2 Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant.

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3256A (en) * 1843-09-09 Improvement in disti lling alcohol
JPH02302044A (ja) * 1989-05-16 1990-12-14 Fujitsu Ltd 半導体装置の製造方法
JP3460863B2 (ja) * 1993-09-17 2003-10-27 三菱電機株式会社 半導体装置の製造方法
US5497019A (en) * 1994-09-22 1996-03-05 The Aerospace Corporation Silicon-on-insulator gate-all-around MOSFET devices and fabrication methods
US5736435A (en) * 1995-07-03 1998-04-07 Motorola, Inc. Process for fabricating a fully self-aligned soi mosfet
KR100230418B1 (ko) * 1997-04-17 1999-11-15 윤종용 백금족 금속층 형성방법 및 이를 이용한 커패시터 제조방법
FR2799305B1 (fr) * 1999-10-05 2004-06-18 St Microelectronics Sa Procede de fabrication d'un dispositif semi-conducteur a grille enveloppante et dispositif obtenu
JP2002151688A (ja) * 2000-08-28 2002-05-24 Mitsubishi Electric Corp Ｍｏｓ型半導体装置およびその製造方法

Also Published As

Publication number Publication date
US7188411B2 (en) 2007-03-13
US20040124468A1 (en) 2004-07-01
FR2845201A1 (fr) 2004-04-02

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100531