CN101785110B - 封装的rf功率器件及其形成方法 - Google Patents
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Abstract
一种封装的RF功率器件包括:晶体管,其具有控制端子和输出端子并且被配置成以基本工作频率进行工作;RF信号输入引线,其耦合到控制端子;以及RF信号输出引线,其耦合到输出端子。谐波降低器耦合到该晶体管的控制端子和/或输出端子并且被配置成为基本工作频率的N次谐波频率处的信号提供从控制端子和/或输出端子到地的短路或低阻抗路径,其中N>1。该器件还包括容纳晶体管和谐波降低器的封装,其中输入引线和输出引线从该封装延伸。还公开了多芯片封装。
Description
技术领域
本发明通常涉及RF和微波晶体管,并且更具体地本发明涉及用于改进封装的RF功率晶体管的线性度的方法、以及具有改进的线性度的封装RF功率晶体管。
背景技术
在高频工作期间改进的线性度是RF功率晶体管工艺的目标。许多因素会影响各种RF功率晶体管工艺中器件的线性度,包括随信号电平而变化的输入和阻抗、随信号电平而变化的电容及其衍生物、击穿和衬底传导效应、工作类型、以及随偏置和信号电平而变化的跨导及其衍生物。另外,在一些应用中,可能期望的是RF功率晶体管在宽范围的工作频率和/或输出功率电平上获得期望的线性度水平。
发明内容
根据本发明一些实施例的封装的RF功率器件包括:晶体管,其包括控制端子和输出端子并且被配置成以基本工作频率进行工作;RF信号输入引线,其耦合到该晶体管的控制端子;以及RF信号输出引线,其耦合到该晶体管的输出端子。封装器件还包括谐波降低器(reducer),该谐波降低器耦合到该晶体管的控制端子和/或输出端子并且被配置成为基本工作频率的谐波频率处的信号提供从控制端子和/或输出端子到地的短路或低阻抗路径。该器件还包括容纳晶体管和谐波降低器的封装,并且RF信号输入引线和RF信号输出引线从该封装延伸。谐波频率例如可以包括二次谐波频率。
谐波降低器可以耦合到控制端子,并且封装的RF功率器件还可以包括连接到晶体管的输出端子的输出侧谐波降低器。谐波降低器可以包括具有第一电容的第一电容器,而所述输出侧谐波降低器可以包括具有与第一电容不同的第二电容的第二电容器。
封装的RF功率器件还可以包括RF信号输入引线和晶体管的控制端子之间的输入匹配电路。谐波降低器可以耦合在输入匹配电路和晶体管的控制端子之间。
谐波降低器可以包括串联谐振电路,所述串联谐振电路包括串联连接到地端子的电感元件和旁路电容器。封装的RF功率器件还可以包括基底。该晶体管在基底上,并且该旁路电容器可以在晶体管和RF输出引线之间的基底上。电感元件可以包括从晶体管延伸到旁路电容器的接合线。
封装的RF功率器件还可以包括在该旁路电容器上从晶体管延伸到RF输出引线的第二接合线。
在一些实施例中,谐波降低器可以包括开路四分之一波长传输线抽头(stub)。所述开路四分之一波长传输线抽头的长度可以被选择成为基本工作频率的谐波频率处的信号提供到地的短路或低阻抗路径。
根据本发明另外实施例的封装的RF功率器件包括:晶体管,其包括控制端子和输出端子并且被配置成以基本工作频率进行工作;RF信号输入引线,其耦合到该晶体管的控制端子;以及RF信号输出引线,其耦合到该晶体管的输出端子。谐波降低器耦合到该晶体管的控制端子和/或输出端子并且被配置成为基本工作频率的N次谐波频率处的信号提供从控制端子和/或输出端子到地的短路或低阻抗路径,其中N>1。该器件还包括容纳晶体管、地端子和谐波降低器的封装,并且输入引线和输出引线从该封装延伸。
封装的RF功率器件还可以包括容纳在该封装中且耦合到晶体管的控制端子和/或输出端子的另外的谐波降低器。所述另外的谐波降低器被配置成为基本工作频率的M次谐波频率处的信号提供从控制端子和/或第二输出端子到地的第二短路或低阻抗路径,其中M>1且M≠N。
谐波降低器和该另外的谐波降低器能够都包括串联谐振电路,所述串联谐振电路包括电感元件和电容器。在一些实施例中,谐波降低器和该另外的谐波降低器中的至少一个可以包括开路四分之一波长传输线抽头。
本发明的一些实施例提供形成封装的RF功率器件的方法。所述方法包括:将晶体管安装在基底上,该晶体管包括控制端子和输出端子并且被配置成以基本工作频率进行工作;在基底上形成谐波信号降低 器并且将该谐波信号降低器连接到该晶体管的控制端子和/或输出端子。该谐波信号降低器被配置成为基本工作频率的N次谐波频率处的信号提供从控制端子和/或第二输出端子到地的短路或低阻抗路径,其中N>1。
所述方法还包括:在基底的相对侧上提供RF信号输入引线和RF信号输出引线;将RF信号输入引线连接到控制端子并且将RF信号输出引线连接到输出端子;以及在晶体管和谐波降低器上形成封装外壳,并且RF信号输入引线和RF信号输出引线从该封装延伸。
形成谐波信号降低器可以包括在基底上提供电容器以及在电容器和晶体管之间形成线接合(wire bond)连接。
在基底上提供电容器可以包括在晶体管的输出端子和RF信号输出引线之间的基底上提供电容器,并且形成线接合连接可以包括在电容器和晶体管的输出端子之间形成线接合连接。
将RF信号输出引线连接到输出端子可以包括形成第二线接合连接,所述第二线接合连接包括在电容器上从输出端子延伸到RF信号输出引线的接合线。
附图说明
附图被包括以提供对本发明的进一步理解并且并入本申请并构成本申请的一部分,所述附图说明了本发明的(一个或多个)特定实施例。在附图中:
图1A是封装的RF功率晶体管的透视图。
图1B是常规RF功率晶体管的功能框图。
图2A-2L是根据本发明一些实施例的封装的RF功率晶体管的功能框图。
图3是根据本发明一些实施例的封装的RF功率晶体管的示意性电路图。
图4是根据本发明一些实施例的封装的RF功率晶体管的布局的平面图。
图5-8是根据本发明一些实施例的封装的RF功率晶体管的示意性电路图。
图9A-9B是根据本发明一些实施例的封装的多芯片RF功率晶体管 的功能框图。
图10是根据本发明一些实施例的封装的多芯片RF功率晶体管的示意性电路图。
具体实施方式
现在将参照附图在下文中更全面地描述本发明的实施例,在所述附图中示出了本发明的实施例。然而,本发明可以以许多不同的形式来实现并且不应当解释为限于本文所阐述的实施例。相反,提供这些实施例以便本公开将是彻底且完整的,并且将向本领域技术人员全面地传达本发明的范围。相似的数字自始至终指代相似的元件。
要理解,尽管术语第一、第二等等可以在本文中用来描述各种元件,但是这些元件不应当受这些术语限制。这些术语仅用来区分一个元件与另一个元件。例如,第一元件可以被称作第二元件,并且类似地第二元件可以被称作第一元件,而不偏离本发明的范围。如本文所用的,术语“和/或”包括相关所列项的一个或多个的任一和所有组合。
本文所用的术语是仅用于描述特定实施例的目的而不旨在限制本发明。如本文所用的,单数形式“一”、“一个”和“该”旨在还包括复数形式,除非上下文另外明确指出。还要理解,术语“包括”和/或“包含”在用于本文中时指定所述特征、整数、步骤、操作、元件和/或部件的存在,但不排除存在或添加一个或多个其他特征、整数、步骤、操作、元件、部件和/或其群组。
除非另外定义,本文所用的所有术语(包括技术和科学术语)具有与本发明所属领域的普通技术人员普遍理解的相同的意思。还要理解,本文所用的术语应当被解释为具有与其在本说明书和相关领域的上下文中的意思相一致的意思而不要以理想化或过度正式的意义进行解释,除非本文明确如此定义。
要理解,当元件被称为“在另一个元件上”或“延伸到另一个元件上”时,其能够直接位于其他元件上或直接延伸到其他元件上或者也可以存在中间元件。相比而言,当元件被称为“直接在另一个元件上”或“直接延伸到另一个元件上”时,就不存在中间元件。还要理解,当元件被称为“连接”或“耦合”到另一个元件时,其能够直接连接或耦合到其他元件或者可以存在中间元件。相比而言,当元件被 称为“直接连接”或“直接耦合”到另一个元件时,就不存在中间元件。
相对术语诸如“在…之下”或“在…之上”或“上”或“下”或“水平”或“横向”或“垂直”在本文中可以用来描述一个元件、层或区域相对另一个元件、层或区域的关系,如图中所示。要理解,这些术语旨在涵盖器件除了图中所示的定向之外的不同定向。
本发明的一些实施例提供封装的RF功率晶体管。RF功率晶体管一般包括并联操作的多个晶体管单元。根据本发明实施例能够被包括在封装中的晶体管能够包括横向扩散的MOSFETS(LDMOSFET)或其他半导体器件,诸如双极型器件、MESFET器件、HBT和HEMT器件。这些晶体管能够使用窄带隙或宽带隙半导体来制作。例如,这些晶体管能够包括硅LDMOS和/或双极型晶体管、和/或III-V器件,诸如GaAs MESFET、InGaP HBT、GaN HEMT器件、GaN双极型晶体管等等。
提供10瓦或更大功率的RF功率晶体管能够被封装为分立器件,如图1A中以10大体示出且示意性地示于图1B中。封装的晶体管15(其例如可以包括FET或双极型器件)一般包括将RF信号输入引线14连接到晶体管15的控制电极(例如,FET的栅极G或双极型晶体管的基极)的输入匹配电路12。RF信号输出引线18连接到晶体管15的输出电极(例如,FET的漏极D或者双极型晶体管的集电极或发射极)。RF信号输入引线14和RF信号输出引线18延伸到该封装10的外部,如图1A所示。FET 15的源极S可以接地。
封装的晶体管10可以被安装在印刷电路板(未示出)上。外部输出匹配电路22也可以被安装在印刷电路板上。偏置/RF双工器(diplexer)(未示出)可以连接到该外部输出匹配电路以将晶体管输出连接到RF输出。而且,DC电源(未示出)可以连接到晶体管输出引线18。
内部匹配网络已经被提供在RF功率晶体管封装内。然而,一般提供这样的内部匹配网络来匹配器件的基本工作频率而不是谐波频率。
如图1B所示,外部输出匹配电路22能够包括谐波短路(harmonicshort),所述谐波短路旨在降低晶体管15的基本工作频率的二次谐波频率处信号的输出信号中的能量。然而,在封装输出引线处可能很难获得谐波短路,至少部分原因在于添加的额外寄生谐振,这可能降 低晶体管10的带宽。
根据本发明的一些实施例,谐波降低器能够被提供在器件封装内,以便在信号到达RF信号输出引线18之前能够发生谐波降低。因而,本发明的一些实施例可以通过降低器件封装本身内的二次和/或更高次谐波来改进封装的RF功率晶体管的线性度。在该封装内放置谐波降低器可以改进在宽范围的频率和/或输出功率电平上的谐波降低器的性能。而且,外部输出匹配电路的设计可以被简化,因为来自封装的信号输出可以在谐波频率处具有较低能量。
例如,如图2A所示,在晶体管15的输出(漏极)处在包括RF功率晶体管15的封装100A内能够包括谐波降低器116。谐波降低器116被配置成降低输出信号中谐波频率(诸如二次谐波频率)处的能量。在一些实施例中,如图2B所示,包括RF功率晶体管15的封装100B能够包括输入匹配电路212,所述输入匹配电路212包括连接到晶体管15的控制电极(例如,栅极G)的谐波降低器。具有谐波降低器的输入匹配电路212中的谐波降低器被配置成降低输入信号中谐波频率(诸如二次谐波频率)处的能量。在一些实施例中,如图2C所示,包括RF功率晶体管15的封装100C能够包括输入匹配电路212以及在晶体管15的输出处的谐波降低器116,所述输入匹配电路212包括连接到晶体管15的控制电极的谐波降低器。
在一些实施例中,包括RF晶体管的封装可能不包括输入匹配电路。例如,如图2D所示,包括RF晶体管15的封装100D可以包括连接到晶体管15的控制电极(例如,栅极G)的谐波降低器112以及位于晶体管15的输出(漏极)处的谐波降低器116。在一些实施例中,如图2E所示,包括RF晶体管15的封装100E可以包括连接到晶体管15的控制电极的谐波降低器112,而在输出处没有谐波降低器。类似地,如图2F所示,包括RF晶体管15的封装100F可以包括连接到晶体管15的输出的谐波降低器116,而在输入处没有谐波降低器。
本发明的一些实施例可以包括连接到晶体管15的输出的输出匹配电路。例如,如图2G所示,包括RF晶体管15的封装100G包括输出匹配电路216,输出匹配电路216包括连接在晶体管15的输出处的谐波降低器。在一些实施例中,如图2H所示,包括RF晶体管15的封装100H可以包括连接到晶体管15的控制电极的谐波降低器112以及连接 在输出处的输出匹配电路16。如图2I所示,包括RF晶体管15的封装100I可以包括连接到晶体管15的输入的谐波降低器112以及具有连接在晶体管15的输出处的谐波降低器的输出匹配电路216。
本发明的一些实施例可以包括连接到晶体管15的输出的输出匹配电路以及连接到晶体管的输入的输入匹配电路。例如,如图2J所示,包括RF晶体管15的封装100J包括输入匹配电路14以及输出匹配电路216,输出匹配电路216包括连接在晶体管15的输出处的谐波降低器。在一些实施例中,如图2K所示,包括RF晶体管15的封装100K可以包括输入匹配电路212以及连接在输出处的输出匹配电路16,输入匹配电路212包括连接到晶体管15的控制电极的谐波降低器。如图2L所示,包括RF晶体管15的封装100L可以包括输入匹配电路212以及输出匹配电路216,输入匹配电路212包括连接到晶体管15的输入的谐波降低器,输出匹配电路216具有连接在晶体管15的输出处的谐波降低器。
根据本发明实施例的包括RF功率晶体管15、包括谐波降低器116的封装100A的示意性电路图示于图3中,并且根据本发明实施例的封装100的物理布局示于图4中。参照图3和4,输入匹配电路12连接在RF信号输入引线14和晶体管15的栅极G之间。输入匹配电路12可以包括:电感性线接合连接,其包括在RF信号输入引线14和电容器36之间延伸的接合线32;以及电感性线接合连接,其包括从电容器36延伸到晶体管15的栅极G的接合线34。
晶体管15的源极S接地,并且RF信号输出引线18经由包括从晶体管的漏极D延伸到RF信号输出引线18的接合线38的电感性线接合连接而连接到晶体管15的漏极D。
在封装100A内还提供连接在晶体管15的漏极D和地之间的谐波降低器116。在图3所示的实施例中,谐波降低器116包括与旁路电容器122串联的电感元件120。如图4所示,旁路电容器122可以被安装在邻近晶体管15的封装100A的基底140上,并且电感元件120可以包括从晶体管15延伸到旁路电容器122的接合线。具体而言,旁路电容器122可以形成在晶体管15和RF信号输出引线18之间的封装100A的基底140上。电感性接合线38可以越过旁路电容器122。
要明白,封装100的基底能够指代晶体管15被安装在其上的任何 结构构件,因而能够对应于衬底、法兰盘(flange)、管芯载体等等。
电感元件120的电感和电容器122的电容可以被选择成为相对于晶体管15的基本工作频率的谐波频率处的信号提供到地的短路和/或低阻抗路径。例如,对于2.5GHz的基本工作频率,电容和电感的值可以被选择成在5GHz的频率处提供短路。这种值的选择在本领域中是已知的。所用的实际值可能取决于电路的配置和/或物理布局。作为示例而不是当作限制,对于被设计成在基本工作频率f处工作的晶体管而言,电容器122的电容和电感元件120的电感可以分别被选择成满足如下等式:
作为示例而不是当作限制,假设基本工作频率为2.5GHz,为了提供在二次谐波频率处(即在5GHz处)的短路/低阻抗路径,电容器122可以具有大约4pF的电容,电感器可以具有大约0.25nH的电感。电容器122的存在可能会使封装器件100A在功率和/或效率方面的性能退化,但是根据一些实施例,这种性能降低可以通过改进在能够获得的宽频率范围上的线性度而得到补偿。
图5是包括连接到晶体管15的控制端子(栅极G)的谐波降低器216的封装RF功率器件100B的示意性电路图。在图5所示的实施例中,谐波降低器216包括与旁路电容器222串联的电感元件220。电感元件220的电感和电容器222的电容可以被选择成在晶体管15的输入处为相对于晶体管15的基本工作频率的谐波频率(诸如二次谐波频率)处的信号提供到地的短路和/或低阻抗路径。
图6是包括耦合到晶体管15的输出端子(漏极D)的谐波降低器116和连接到晶体管15的控制端子(栅极G)的谐波降低器216的封装RF功率器件100C的示意性电路图。在图6所示的实施例中,谐波降低器116包括与旁路电容器122串联的电感元件120,而谐波降低器216包括与旁路电容器222串联的电感元件220。电感元件120、220的电感和电容器122、222的电容可以被选择成在晶体管15的输入和输出两者处为相对于晶体管15的基本工作频率的谐波频率(诸如二次谐波频率)处的信号提供到地的短路和/或低阻抗路径。然而,要明白,例如为电容器122、222选择的特定值可以由于谐波降低器116、216相对于晶体管15的不同位置而不同。例如,在一些实施例中,电容器 222的电容可以大于电容器122的电容。
在其他实施例中,谐波降低器可以包括谐振结构,诸如开路四分之一波长传输线抽头,其可以形成在晶体管15所安装于其上的基底140上。四分之一波长开路传输线抽头具有等于谐波频率的波长的四分之一的长度,并且能够为谐波频率处的信号提供短路。图7是包括谐波降低器116的封装RF晶体管100A的示例性示意性电路图,所述谐波降低器116是使用连接在晶体管15的输出(漏极D)处的开路四分之一波长传输线抽头316来实施的。
图8是包括连接在晶体管15的输出端子和RF输出引线18之间的输出匹配电路16的RF晶体管的封装100J的示意性电路图。输出匹配电路16包括串联电感76、76和旁路电容器78。
本发明的一些实施例提供包括多个RF晶体管的多芯片封装。例如,图9A和9B是根据本发明一些实施例的封装的多芯片RF功率晶体管的功能框图,而图10是根据本发明一些实施例的封装的多芯片RF功率晶体管的示意性电路图。
参照图9A,根据本发明一些实施例的多芯片封装300A包括输入网络312,所述输入网络312包括连接在RF输入引线14与第一和第二晶体管15A、15B的控制电极之间的谐波降低器。晶体管15A、15B的输出连接到RF输出引线18。
其他配置是可能的。例如,如图9B所示,根据本发明一些实施例的多芯片封装300B包括连接在RF输入引线14与第一和第二晶体管15A、15B的控制电极之间的输入网络314。第一谐波降低器316A连接在第一晶体管15A的输出端子和RF输出引线18之间,而第二谐波降低器316B连接在第二晶体管15B的输出端子和RF输出引线18之间。
根据本发明一些实施例的封装的多芯片RF功率晶体管300B的示意性电路图示于图10中。如其中所示,多芯片封装300B包括连接在RF输入引线14与第一和第二晶体管15A、15B的控制电极之间的输入网络314。输入网络314包括连接在RF输入引线14与第一晶体管15A的控制端子之间的串联电感器32A、34A和旁路电容器36A以及连接在RF输入引线14与第二晶体管15B的控制端子之间的串联电感器32B、34B和旁路电容器36B。包括电感320A和电容器322A的第一谐波降低器316A连接到第一晶体管15A的输出端子,而包括电感320B和电容 器322B的第二谐波降低器316B连接到第二晶体管15B的输出端子。根据本申请,在本发明的范围内多芯片封装的其他配置将是显而易见的,包括具有输入匹配网络、输出匹配网络、输入侧谐波降低器和/或输出侧谐波降低器的封装。
根据本发明实施例的封装RF功率晶体管可以用于其中线性度是重要的各种应用中。例如,根据本发明实施例的封装功率晶体管可以应用于诸如WiMAX、WCDMA、CDMA和/或包括将来(第四代)系统的其他系统之类的系统中。一般而言,本发明的实施例可以用于其中期望功率晶体管的线性性能的任何应用中。
尽管主要结合被配置成降低在基本工作频率的二次谐波频率处的信号的谐波降低器描述了本发明的实施例,但是要明白谐波降低器可以经过电抗值的适当选择进行配置以减少在较高次谐波频率处的信号。一般而言,根据本发明一些实施例的谐波降低器可以被配置成减少N次谐波频率处的信号,其中N>1。而且,根据一些实施例可以提供多个谐波降低器以减少在各个不同谐波频率处的信号。
在附图和说明书中,已经公开了本发明的典型实施例,并且尽管采用了特定术语,但是它们仅在一般和描述性的意义上加以使用而不用于限制目的,本发明的范围在所附权利要求中阐述。
Claims (12)
1.一种封装的RF功率器件,包括:
基底;
在所述基底上的晶体管,该晶体管包括控制端子和输出端子并且被配置成以基本工作频率进行工作;
RF信号输入引线,其耦合到该晶体管的控制端子;
RF信号输出引线,其耦合到该晶体管的输出端子,该RF信号输入引线和RF信号输出引线被提供在所述基底的相对侧上;
谐波降低器,其耦合到该晶体管的输出端子并且被配置成为基本工作频率的N次谐波频率处的信号提供从控制端子和/或输出端子到地的短路或低阻抗路径,其中N>1,其中所述谐波降低器包括串联谐振电路,所述串联谐振电路包括串联连接到地端子的电感元件和旁路电容器,其中该旁路电容器在所述晶体管和所述RF信号输出引线之间的基底上,且其中所述电感元件包括从所述晶体管延伸到所述旁路电容器的接合线;以及
封装,其容纳所述晶体管和谐波降低器,并且所述RF信号输入引线和RF信号输出引线从该封装延伸。
2.权利要求1的封装的RF功率器件,其中所述谐波降低器包括输出侧谐波降低器,该器件还包括输入侧谐波降低器,其中所述输入侧谐波降低器包括具有第一电容的第一电容器,所述输出侧谐波降低器包括具有与第一电容不同的第二电容的第二电容器。
3.权利要求2的封装的RF功率器件,还包括在RF信号输入引线和晶体管的控制端子之间的输入匹配电路,其中所述输入侧谐波降低器耦合在输入匹配电路和晶体管的控制端子之间。
4.权利要求1的封装的RF功率器件,还包括在RF信号输出引线和晶体管的输出端子之间的输出匹配电路,其中所述谐波降低器耦合在输出匹配电路和晶体管的输出端子之间。
5.权利要求1的封装的RF功率器件,还包括在RF信号输出引线和晶体管的输出端子之间的输出匹配电路和/或在RF信号输入引线和晶体管的控制端子之间的输入匹配电路。
6.权利要求1的封装的RF功率器件,还包括在该旁路电容器上从晶体管延伸到RF输出引线的第二接合线。
7.权利要求1的封装的RF功率器件,其中所述谐波降低器包括开路四分之一波长传输线抽头。
8.权利要求7的封装的RF功率器件,其中所述开路四分之一波长传输线抽头的长度被选择成为基本工作频率的谐波频率处的信号提供到地的短路或低阻抗路径。
9.权利要求1的封装的RF功率器件,其中基本工作频率的谐波频率包括基本工作频率的二次谐波频率。
10.权利要求1的封装的RF功率器件,其中所述晶体管包括第一晶体管并且所述谐波降低器包括第一谐波降低器,所述封装还包括:
第二晶体管,其包括控制端子和输出端子并且被配置成以基本工作频率进行工作,其中RF信号输入引线耦合到第二晶体管的控制端子,RF信号输出引线耦合到第二晶体管的输出端子;以及
第二谐波降低器,其耦合到第二晶体管的控制端子和/或输出端子并且被配置成为基本工作频率的谐波频率处的信号提供从第二晶体管的控制端子和/或输出端子到地的短路或低阻抗路径;
其中所述封装还容纳第二晶体管和第二谐波降低器。
11.一种形成封装的RF功率器件的方法,包括:
将晶体管安装在基底上,该晶体管包括控制端子和输出端子并且被配置成以基本工作频率进行工作;
在基底上形成谐波信号降低器并且将该谐波信号降低器连接到该晶体管的控制端子和/或输出端子,其中该谐波信号降低器被配置成为基本工作频率的N次谐波频率处的信号提供从控制端子和/或第二输出端子到地的短路或低阻抗路径,其中N>1;
在基底的相对侧上提供RF信号输入引线和RF信号输出引线;
将RF信号输入引线连接到控制端子并且将RF信号输出引线连接到输出端子;以及
在晶体管和谐波降低器上形成封装外壳,并且RF信号输入引线和RF信号输出引线从该封装延伸;
其中形成谐波信号降低器包括在基底上提供电容器以及在电容器和晶体管之间形成线接合连接;以及
其中在基底上提供电容器包括在晶体管的输出端子和RF信号输出引线之间的基底上提供电容器,且其中形成线接合连接包括在电容器和晶体管的输出端子之间形成线接合连接。
12.权利要求11的方法,其中将RF信号输出引线连接到输出端子包括形成第二线接合连接,所述第二线接合连接包括在电容器上从输出端子延伸到RF信号输出引线的接合线。
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EP0949754B1 (en) * | 1998-04-10 | 2004-10-06 | Taiyo Yuden Co., Ltd. | High-frequency power amplifier circuit and high-frequency power amplifier module |
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Publication number | Publication date |
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CN101785110A (zh) | 2010-07-21 |
EP2162914A2 (en) | 2010-03-17 |
KR20100024496A (ko) | 2010-03-05 |
JP2013141291A (ja) | 2013-07-18 |
WO2009002387A2 (en) | 2008-12-31 |
US8076994B2 (en) | 2011-12-13 |
US20080315392A1 (en) | 2008-12-25 |
JP5850868B2 (ja) | 2016-02-03 |
JP2010531060A (ja) | 2010-09-16 |
KR101487570B1 (ko) | 2015-01-29 |
WO2009002387A3 (en) | 2009-02-19 |
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