CN101740510A - 形成厚度均匀的栅氧化层的方法 - Google Patents
形成厚度均匀的栅氧化层的方法 Download PDFInfo
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- CN101740510A CN101740510A CN200810044022A CN200810044022A CN101740510A CN 101740510 A CN101740510 A CN 101740510A CN 200810044022 A CN200810044022 A CN 200810044022A CN 200810044022 A CN200810044022 A CN 200810044022A CN 101740510 A CN101740510 A CN 101740510A
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CN101740510A true CN101740510A (zh) | 2010-06-16 |
CN101740510B CN101740510B (zh) | 2011-03-23 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102593038A (zh) * | 2011-01-17 | 2012-07-18 | 上海华虹Nec电子有限公司 | 浅沟槽隔离的制造方法 |
CN103035645A (zh) * | 2012-08-10 | 2013-04-10 | 上海华虹Nec电子有限公司 | 一种沟槽栅型mos管及其制造方法 |
CN105655284A (zh) * | 2014-11-13 | 2016-06-08 | 中芯国际集成电路制造(上海)有限公司 | 沟槽隔离结构的形成方法 |
CN106158613A (zh) * | 2015-04-15 | 2016-11-23 | 上海格易电子有限公司 | 一种提高浮栅器件电子保持性的方法及浮栅结构 |
CN113223979A (zh) * | 2021-04-28 | 2021-08-06 | 上海华虹宏力半导体制造有限公司 | 栅氧化层工艺中的厚度补偿方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1218379C (zh) * | 2002-06-20 | 2005-09-07 | 旺宏电子股份有限公司 | 浅沟槽隔离的制造方法 |
CN101075574A (zh) * | 2007-06-12 | 2007-11-21 | 上海宏力半导体制造有限公司 | 高压组件的浅沟槽隔离结构的制造方法 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102593038A (zh) * | 2011-01-17 | 2012-07-18 | 上海华虹Nec电子有限公司 | 浅沟槽隔离的制造方法 |
CN103035645A (zh) * | 2012-08-10 | 2013-04-10 | 上海华虹Nec电子有限公司 | 一种沟槽栅型mos管及其制造方法 |
CN103035645B (zh) * | 2012-08-10 | 2015-08-19 | 上海华虹宏力半导体制造有限公司 | 一种沟槽栅型mos管及其制造方法 |
CN105655284A (zh) * | 2014-11-13 | 2016-06-08 | 中芯国际集成电路制造(上海)有限公司 | 沟槽隔离结构的形成方法 |
CN105655284B (zh) * | 2014-11-13 | 2019-03-29 | 中芯国际集成电路制造(上海)有限公司 | 沟槽隔离结构的形成方法 |
CN106158613A (zh) * | 2015-04-15 | 2016-11-23 | 上海格易电子有限公司 | 一种提高浮栅器件电子保持性的方法及浮栅结构 |
CN113223979A (zh) * | 2021-04-28 | 2021-08-06 | 上海华虹宏力半导体制造有限公司 | 栅氧化层工艺中的厚度补偿方法 |
CN113223979B (zh) * | 2021-04-28 | 2023-08-22 | 上海华虹宏力半导体制造有限公司 | 栅氧化层工艺中的厚度补偿方法 |
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CN101740510B (zh) | 2011-03-23 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |