KR100595877B1 - 반도체 소자 제조 방법 - Google Patents
반도체 소자 제조 방법 Download PDFInfo
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- KR100595877B1 KR100595877B1 KR1020050024233A KR20050024233A KR100595877B1 KR 100595877 B1 KR100595877 B1 KR 100595877B1 KR 1020050024233 A KR1020050024233 A KR 1020050024233A KR 20050024233 A KR20050024233 A KR 20050024233A KR 100595877 B1 KR100595877 B1 KR 100595877B1
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- South Korea
- Prior art keywords
- trench
- oxide film
- semiconductor device
- film
- semiconductor substrate
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000002955 isolation Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 150000004767 nitrides Chemical class 0.000 claims abstract description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 8
- -1 nitrogen ions Chemical class 0.000 claims abstract description 7
- 230000003647 oxidation Effects 0.000 claims abstract description 7
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 7
- 230000004888 barrier function Effects 0.000 claims abstract description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 230000006866 deterioration Effects 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76859—After-treatment introducing at least one additional element into the layer by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76867—Barrier, adhesion or liner layers characterized by methods of formation other than PVD, CVD or deposition from a liquids
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (7)
- 반도체 기판 상에 소자 분리 영역이 오픈된 트렌치 마스크 패턴을 형성하는 단계;상기 오픈된 부위의 반도체 기판을 식각하여 트렌치를 형성하는 단계;상기 트렌치 마스크 패턴을 일부 두께 식각하여 상기 트렌치의 활성 영역의 일부를 노출시키는 단계;상기 트렌치 및 상기 노출된 활성 영역 일부 상에 절연막을 형성하는 단계;상기 패드 질화막을 제거하는 단계;상기 절연막을 베리어로 하여 질소 이온을 주입하는 단계;상기 패드 산화막을 제거하는 단계; 및열산화를 실시하여 상기 반도체 기판 전면에 게이트 산화막을 성장시키는 단계를 포함하는 반도체 소자 제조 방법.
- 제 1 항에 있어서,상기 트렌치 마스크 패턴은 패드 산화막과 패드 질화막의 적층 구조로 사용하는 반도체 소자 제조 방법.
- 제 2 항에 있어서,상기 패드 산화막은 100Å, 상기 패드 질화막은 1500Å∼2000Å의 두께로 형성하는 반도체 소자 제조 방법.
- 제 1 항에 있어서,상기 트렌치 마스크 패턴의 상기 패드 질화막을 일부 식각하여 상기 트렌치의 엣지를 노출시키는 단계는,인산 용액을 사용하여 상기 패드 질화막을 200Å∼1000Å의 두께만큼 습식 식각하고, 상기 트렌치 엣지를 노출시키는 단계를 동시에 실시하는 반도체 소자 제조 방법.
- 제 1 항에 있어서,상기 질소 이온 주입은 20keV∼100KeV, 도즈를 1E13∼1E16으로 하여 실시하는 반도체 소자 제조 방법.
- 제 1 항에 있어서,상기 절연막은 CVD 산화막을 사용하는 반도체 소자 제조 방법.
- 제 1 항에 있어서,상기 열산화는 600℃∼1100℃의 온도로 진행하는 반도체 소자 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050024233A KR100595877B1 (ko) | 2005-03-23 | 2005-03-23 | 반도체 소자 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050024233A KR100595877B1 (ko) | 2005-03-23 | 2005-03-23 | 반도체 소자 제조 방법 |
Publications (1)
Publication Number | Publication Date |
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KR100595877B1 true KR100595877B1 (ko) | 2006-07-03 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050024233A KR100595877B1 (ko) | 2005-03-23 | 2005-03-23 | 반도체 소자 제조 방법 |
Country Status (1)
Country | Link |
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KR (1) | KR100595877B1 (ko) |
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2005
- 2005-03-23 KR KR1020050024233A patent/KR100595877B1/ko active IP Right Grant
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