CN101681129B - 光致抗蚀剂剥离剂组合物 - Google Patents
光致抗蚀剂剥离剂组合物 Download PDFInfo
- Publication number
- CN101681129B CN101681129B CN2008800160126A CN200880016012A CN101681129B CN 101681129 B CN101681129 B CN 101681129B CN 2008800160126 A CN2008800160126 A CN 2008800160126A CN 200880016012 A CN200880016012 A CN 200880016012A CN 101681129 B CN101681129 B CN 101681129B
- Authority
- CN
- China
- Prior art keywords
- weight
- amine
- release agent
- lead wire
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP129699/2007 | 2007-05-15 | ||
JP2007129699A JP4716225B2 (ja) | 2007-05-15 | 2007-05-15 | フォトレジスト剥離剤組成物 |
PCT/JP2008/058750 WO2008140076A1 (ja) | 2007-05-15 | 2008-05-13 | フォトレジスト剥離剤組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101681129A CN101681129A (zh) | 2010-03-24 |
CN101681129B true CN101681129B (zh) | 2012-05-30 |
Family
ID=40002266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008800160126A Active CN101681129B (zh) | 2007-05-15 | 2008-05-13 | 光致抗蚀剂剥离剂组合物 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4716225B2 (ko) |
KR (1) | KR101420471B1 (ko) |
CN (1) | CN101681129B (ko) |
TW (1) | TWI434150B (ko) |
WO (1) | WO2008140076A1 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102124414B (zh) * | 2009-04-17 | 2014-04-02 | 长瀬化成株式会社 | 光致抗蚀剂剥离剂组合物以及光致抗蚀剂剥离方法 |
JP5890306B2 (ja) * | 2009-07-29 | 2016-03-22 | 東友ファインケム株式会社Dongwoo Fine−Chem Co., Ltd. | 洗浄液組成物及びこれを用いたパネルの洗浄方法 |
JP5023128B2 (ja) * | 2009-10-07 | 2012-09-12 | 東京エレクトロン株式会社 | 塗布現像装置及び塗布現像方法 |
JP5709075B2 (ja) * | 2010-09-10 | 2015-04-30 | ナガセケムテックス株式会社 | リン酸及び/又はリン酸塩の水溶液のパーティクル数経時安定化方法及びレジスト残渣剥離剤組成物 |
KR101089211B1 (ko) * | 2010-12-02 | 2011-12-02 | 엘티씨 (주) | 1차 알칸올 아민을 포함하는 lcd 제조용 포토레지스트 박리액 조성물 |
JP5885046B1 (ja) * | 2015-03-24 | 2016-03-15 | パナソニックIpマネジメント株式会社 | レジスト剥離液 |
CN111781808A (zh) * | 2015-09-16 | 2020-10-16 | 东友精细化工有限公司 | 抗蚀剂剥离液组合物、平板显示器基板及其制造方法 |
CN108139692A (zh) * | 2015-10-13 | 2018-06-08 | 长濑化成株式会社 | 光致抗蚀剂剥离液 |
CN107995960B (zh) * | 2016-09-30 | 2019-03-12 | 松下知识产权经营株式会社 | 抗蚀剂剥离液 |
WO2020018804A1 (en) | 2018-07-20 | 2020-01-23 | Entegris, Inc. | Cleaning composition with corrosion inhibitor |
JP7247038B2 (ja) | 2019-07-02 | 2023-03-28 | 株式会社カネカ | 被覆導体およびその製造方法 |
KR102334425B1 (ko) * | 2019-11-21 | 2021-12-01 | 엘티씨 (주) | 디스플레이 제조용 포토레지스트 박리액 조성물 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08262746A (ja) * | 1995-03-28 | 1996-10-11 | Mitsubishi Gas Chem Co Inc | フォトレジスト剥離剤組成物および剥離方法 |
JP2001350276A (ja) * | 2000-06-05 | 2001-12-21 | Nagase Kasei Kogyo Kk | フォトレジスト剥離剤組成物及びその使用方法 |
JP4692799B2 (ja) * | 2001-05-22 | 2011-06-01 | ナガセケムテックス株式会社 | レジスト剥離用組成物 |
JP2004287288A (ja) * | 2003-03-24 | 2004-10-14 | Nagase Chemtex Corp | レジスト剥離用組成物及びレジスト剥離方法 |
JP4628209B2 (ja) * | 2004-11-18 | 2011-02-09 | 花王株式会社 | 剥離剤組成物 |
JP4692497B2 (ja) * | 2007-02-28 | 2011-06-01 | ナガセケムテックス株式会社 | フォトレジスト剥離剤組成物 |
-
2007
- 2007-05-15 JP JP2007129699A patent/JP4716225B2/ja active Active
-
2008
- 2008-05-05 TW TW097116444A patent/TWI434150B/zh active
- 2008-05-13 KR KR1020097024223A patent/KR101420471B1/ko active IP Right Grant
- 2008-05-13 WO PCT/JP2008/058750 patent/WO2008140076A1/ja active Application Filing
- 2008-05-13 CN CN2008800160126A patent/CN101681129B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP4716225B2 (ja) | 2011-07-06 |
TWI434150B (zh) | 2014-04-11 |
CN101681129A (zh) | 2010-03-24 |
KR101420471B1 (ko) | 2014-07-16 |
JP2008286881A (ja) | 2008-11-27 |
WO2008140076A1 (ja) | 2008-11-20 |
TW200900884A (en) | 2009-01-01 |
KR20100017192A (ko) | 2010-02-16 |
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Legal Events
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PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20100324 Assignee: Wuxi Xicheng microelectronic material Co., Ltd. Assignor: Nagase Chemtex Corp. Contract record no.: 2017990000400 Denomination of invention: Photoresist remover composition Granted publication date: 20120530 License type: Common License Record date: 20171017 |
|
EE01 | Entry into force of recordation of patent licensing contract | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20100324 Assignee: Mianyang Chenghong Microelectronic Materials Co., Ltd. Assignor: Nagase Chemtex Corp. Contract record no.: 2018990000177 Denomination of invention: Positive photosensitive resist release agent compositions Granted publication date: 20120530 License type: Common License Record date: 20180705 |
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EE01 | Entry into force of recordation of patent licensing contract |