CN101675540B - 半导体发光装置 - Google Patents

半导体发光装置 Download PDF

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CN101675540B
CN101675540B CN200880014870.7A CN200880014870A CN101675540B CN 101675540 B CN101675540 B CN 101675540B CN 200880014870 A CN200880014870 A CN 200880014870A CN 101675540 B CN101675540 B CN 101675540B
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畑裕道
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Rohm Co Ltd
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract

本发明提供了一种半导体发光装置。半导体发光元件(A)包括具有发光层(22)的半导体发光元件(2)、形成有包围上述半导体发光元件(2)的反射器(11)的引线(1)、和覆盖上述半导体发光元件(2)的透光树脂(4)。上述引线(1)具有在上述反射器(11)的底面形成的凹部(12)。上述半导体发光元件(2)在使上述发光层(22)从上述凹部(12)露出的状态下，被支撑在上述凹部(12)的底面。在上述半导体发光元件(2)和上述凹部(12)之间，填充有比上述透光树脂(4)导热率大的高导热材(3)。

Description

半导体发光装置
技术领域
本发明涉及具备半导体发光元件的半导体发光装置。
背景技术
图5表示现有的半导体发光装置的一例(例如参照专利文献1)。该图所示的半导体发光装置X包括引线91、搭载在该引线上的LED芯片92。在引线91，形成收容LED芯片92的凹部。该凹部具有由平坦的底面和越向上方越宽的侧面91a规定的形状。LED芯片92对于上述凹部的底面使用银浆接合。上述侧面91a作为反射由LED芯片92射出的光的反射器发挥作用。引线91和LED芯片92被透光树脂94覆盖。在透光树脂94上，形成有位于LED芯片92的正面的透镜94a。LED芯片92具有在GaAs基板上形成的发光层92a。来自发光层92a的光直接或者被反射器91a反射后，朝向上方前进，而后，透过透镜94a向半导体发光装置X外射出。
上述半导体发光装置X在以下几点有改良的余地。第一，LED芯片92的结构上，射出的光的前进范围大致限于由发光层92a看去的前方的空间。因此，反射器91a的上述底面附近的部分对使来自LED芯片92的光面向透镜94a没有帮助，造成浪费。第二，来自发光层92a的光的一部分在透光树脂94的表面全反射，返回LED芯片92。该返回的光由于被LED芯片92的GaAs基板吸收，因此半导体发光装置X的射出效率低下。第三，为了提高来自LED芯片92的光的亮度，例如应该加大投入电力，在此情况下，LED芯片92的发热量增多。由于LED芯片92被透光树脂94覆盖，难以使产生的热适当发散。
专利文献1：日本特开2006-303184号公报
发明内容
本发明基于上述问题提出的。本发明的课题在于提供能够实现高亮度化的半导体发光装置。
本发明提供的半导体发光装置包括具有发光层的半导体发光元件、形成有包围上述半导体发光元件的反射器的引线、和覆盖上述半导体发光元件的透光树脂。上述引线具有在上述反射器的底面形成的凹部。上述半导体发光元件在使上述发光层由上述凹部露出的状态下，被支撑在上述凹部的底面。在上述半导体发光元件和上述凹部之间，填充有比上述透光树脂导热率高的高导热材料。
根据上述结构，从上述反射器的底部至上端的大致全体区域，起到反射来自上述发光元件的光的作用。除此以外，能够使从上述半导体发光元件产生的热通过上述高导热材料适当地向上述引线发散。从而，能够提高来自上述半导体发光元件的光的射出效率，并且实现上述半导体发光元件的高输出化，实现上述半导体发光装置的高亮度化。
优选上述凹部具有距离该凹部的上述底面越远截面尺寸越大的锥形状的开口端。
优选在上述凹部的上述底面，形成向上述开口端一侧隆起的凸部，上述半导体发光元件搭载在上述凸部上。
本发明的其他特征和优点，参照附图通过以下的详细说明能够更加明确。
附图说明
图1是表示基于本发明的半导体发光装置的一例的截面图。
图2是表示上述半导体发光装置的主要部分的截面图。
图3是表示上述半导体发光装置使用的引线和半导体发光元件的俯视图。
图4是说明上述半导体发光装置的变形例的截面图。
图5是表示现有的半导体发光装置的一例的截面图。
具体实施方式
图1～图3表示基于本发明的半导体发光装置的一例。图示的半导体发光装置A包括引线1、LED芯片2、透光树脂4。半导体发光装置A构成为所谓炮弹型的LED装置，但本发明不限于此。
引线1例如由Cu合金组成，用于支撑LED芯片2，并用于对LED芯片2供给电力。由图1和图3可以看出，在引线1，形成有由壁面11规定的相对直径较大的凹部和设置在该直径较大的凹部的底部中央的直径相对较小的凹部12。壁面11将LED芯片2包围(参照图3)，作为反射从LED芯片2向侧方发出的光的反射器使用。
上述直径较小的凹部12形成为比壁面11的底部更深的截面呈圆形的部分。如图3所示，凹部12的直径比LED芯片2的对角线的长度稍大。如图2所示，在凹部12的上部，形成锥形部12a，在凹部12的底部形成凸部12b。进一步具体而言，锥形部12a在凹部12的开口端形成，在图示的示例中，为环状的倒角部。凸部12b为在凹部12的底面形成比其周边边缘部分隆起的截面呈圆形的部分。
LED芯片2是半导体发光装置A的光源，如图2所示，包括基板21、发光层22、下方电极23和上方电极24。基板21在制造LED芯片2时作为基座使用，例如由GaAs构成。发光层22由例如在基板21上叠层的n型半导体层、活性层和p型半导体层构成。通过在发光层22内使空穴和电子再结合，发出规定的波长的光(例如红色)。上述两个电极23、24夹持基板21和发光层22地形成，分别由金属制的薄膜构成。
LED芯片2使用银浆3搭载在引线1上。银浆3含有较多的银(具有较高的导热率)。如图2所示，LED芯片2以凸部12b和下方电极23正对的姿势进行搭载。LED芯片2中，基板21的下方部分被收纳在凹部12内(即，图2中，位于凹部12的开口端下方的位置)。另一方面，基板21的上方部分和发光层22的整体从凹部12露出(即，位于凹部12的开口端上方的位置)。银浆3不仅填入电极23和凹部12b之间，还填入凹部12的侧壁和LED芯片2之间的间隙。银浆3的上表面为连接锥形部12a的上端边缘和基板21的表面，不到达发光层22。上方电极24经由导线连接与引线1相邻的第2引线(参照图1)。
透光树脂4由透过来自LED芯片2的光的例如透明的环氧树脂构成，如图1所示，覆盖引线1和LED芯片2。在透光树脂4上，形成有透镜4a。透镜4a位于LED芯片2的正面，起到提高来自LED芯片2的光的指向性的作用。
下面，对于半导体发光装置A的作用进行说明。
根据上述结构，能够通过射出效率的提高和高输出化实现半导体发光装置A的高亮度化。
首先，几乎不发光的基板21的大部分被收容在凹部12内。因此，发光层22位于反射器(壁面)11的底部附近。由此，从反射器11的底部至上端的大致全体区域，起到将来自LED芯片2的光面向透镜4a反射的作用。除此以外，来自LED芯片2的光中在透光树脂4的表面被全反射的光，即使返回LED芯片2，也能够抑制该光被GaAs构成的基板21吸收。从而，能够将来自LED芯片2的光有效地射出。
而后，LED芯片2的下方电极23和基板21的大部分通过银浆3与引线1接合。银浆3比透光树脂4导热率大很多。因此，能够使由于发光而从LED芯片2产生的热通过银浆3向引线1有效地散热。因此，能够实现LED芯片2的高输出化。
通过使发光层22从凹部12露出，能够防止银浆3与发光层22不当地导通。此外，通过设置锥形部12a，能够缓和银浆3的上表面的凸起(pickup)。因此，能够避免银浆3蔓延基板21的侧面到达发光层22。
此外，通过将LED芯片2配置在凹部12内，能够正确地进行LED芯片2和透镜4a的定位。特别是，夹在凸部12b和下方电极23之间的银浆3发挥所谓的定心效果，能够抑制LED芯片2的配置位置从凸部12b较大地错位。
图4表示上述半导体发光装置A的变形例。如该图所示，作为半导体发光装置A的锥形部12a，除了形成上述倒角部的形态的锥形部之外，还可以使用所谓的R加工形态的锥形部。通过这样的锥形部12a也能够防止银浆3的蔓延。
作为本发明使用的半导体发光元件不限于发出红色光的半导体发光元件，能够使用发出各种波长的光的半导体发光元件。作为半导体发光元件的结构，不限于在表面和背面设置电极的结构，还可以为例如在单面一侧配置两个电极的结构。上述的银浆只是高导热材料的一例，也可以通过使用比透光树脂导热率高的其他材质，实现促进半导体发光元件的放热。`

Claims (2)

1.一种半导体发光装置，其特征在于，包括：
具有发光层的半导体发光元件；
包围所述半导体发光元件的反射器；和
覆盖所述半导体发光元件的透光树脂，
所述反射器具有在底面形成的凹部，
所述半导体发光元件，在所述发光层从所述凹部露出的状态下，被支撑在所述凹部的底面，在所述半导体发光元件和所述凹部之间，填充有比所述透光树脂的导热率大的高导热材，
在所述凹部的所述底面，形成有向所述凹部的开口端一侧隆起的凸部，
所述半导体发光元件，按照所述半导体发光元件的底面的各角部位于所述凸部的外侧的方式搭载在所述凸部。
2.如权利要求1所述的半导体发光装置，其特征在于：
所述凹部具有距离该凹部的所述底面越远截面尺寸越大的锥形状的开口端。
CN200880014870.7A 2007-04-05 2008-03-28 半导体发光装置 Expired - Fee Related CN101675540B (zh)

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JP2010161139A (ja) * 2009-01-07 2010-07-22 Toshiba Corp 発光装置
EP2447595B1 (en) 2010-10-27 2017-08-02 LG Innotek Co., Ltd. Light emitting module
KR101172203B1 (ko) 2010-10-27 2012-08-16 엘지이노텍 주식회사 발광모듈
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CN101675540A (zh) 2010-03-17

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