201003978 九、發明說明： 【發明所屬之技術領域】 • 本發明係關於一種發光二極體，尤係關於一種發 • 光二極體之散熱結構。 【先前技術】 發光二極體（Light Emitting Diode)係利用半導 體材料中之電子與空穴結合時能量帶位階之改變，以 發光之形式釋放出能量。由於發光二極體具有體積 小、壽命長、驅動電壓低、反映速度快、耐震性佳等 優點’已被廣泛地應用在廣告板、交通標誌、日常照 明等各種領域中。 一種習知之發光二極體包括一基座、位於該基座 上之一發光晶片及包圍該發光晶片週邊之一封膠體。 發光晶片通過導線與基座上之導電元件電連接。該基 座為一平板狀之金屬板’發光晶片所產生之熱量首先 通過基座散發。 然而，通常發光二極體發光時，其所消耗之能量 僅大約10〜20%被轉換成光能，而其餘之能量被轉換 成熱量，這些熱量必須及時疏散掉以保證發光二極體 之正常工作。 【發明内容】 有鑒於此，有必要提供一種具有較好散熱性能之 發光二極體。 6 201003978 種發光一極體’包括基座、碗杯、發光晶片、 膠體、電極以及散熱體，所述膠體填充至碗杯内，將 發光晶片固定至基座上，該電極位於基座下方，且與 發光晶片電連接，該散熱體沿軸向貫穿上述基座，將 發光晶片產生之熱量向外傳遞。 、 進一步地，該散熱體之内部形成有大量孔隙。 上述發光二極體中，該散熱體貫穿上述基座，且 其内部形成有大量孔隙，可將發光晶片產生之熱量由 發光晶片處快速地向外傳遞，提高了所述發光二極體 之散熱效率。 【實施方式】 下面參照附圖，以覆晶式發光二極體為例對本發 明作進一步之描述。 圖1為一覆晶式發光二極體10之剖面示意圖。該 發光二極體10包括一基座H、一發光晶片12、一膠 體13、二電極14、一透光體15以及一散熱體16。 該基座11由導熱材料如金屬、陶瓷等製成。本 實施例中，基座11之材料為銅、鋁等金屬。基座u 之上部形成一碗杯112，碗杯112之側面形成有金、 銀等高反射鍍層以增進光之反射率而提高發光二極體 10之亮度。 該發光晶片12被倒置於碗杯112内，通過二焊锡 凸塊17與基座11電連接。該發光晶片12具有p極 7 201003978 和N極二電極14’其中，n極之厚度大於P極之厚度， 在P極和N極之間形成一台階，在發光晶片12之中 部形成一側接觸面122。 所述膠體13填充於碗杯112内，用以將發光晶片 12固定至所述碗杯112内，防止發光晶片12受到外 2衝擊等損壞。形成該膠體13之材料可以為環氧樹 脂、聚醯亞胺、或壓克力等。該膠體13内填充有螢光 粉18,以與發光晶片12共同作用，得到所需波 光線。 所述電極14設於基座u下方，該等電極14相互 分，且均與基座n之底面相接觸。上述電極14與發 光晶片12之間通過凸塊17及貫穿基座11之電通道 19電連接。5亥電通道19之材質可> + m „ 秆貝T為金屬、金屬與樹 月曰^合物、石墨或石墨與樹脂之混合物，且其導電 率兩於基座11材料之I雷i 電率。可以理解地，由於本實 施例中之基座U為導電 Λ 可無需設置電通道19，而=材：’該基座11内也 而直接利用凸塊17鱼今Μ其 座11實現電極14與發# Β Η ^ /、金屬基 兴赞九晶片12之電連接。 該散熱體16設於其！* , .^ °又於基座11之中部，並沿軸向貫穿 基座11。該散埶體士道丸 平丨j貝牙 ^ 、、、體6由導熱之電絕緣材料如氡化鋁、 2=且出其導熱率高於基座U之導熱率，使發 ^另外::之熱量可沿散熱體16快速地向下傳 哕气孰體16二體16之内部形成有大量孔隙’以提高 遺政熱體16之導熱率。 201003978 该散熱體16具有一伸進碗杯112内之突出部 162，該突出部162之一側面163與發光晶片12之侧 接觸面122相接觸，可對發光晶片12準確定位，便於 發光晶片12對準基座η上之凸塊17。 該散熱體16沿徑向貫穿基座11之下部，將基座 11分隔為電絕緣之左、右二部分’且自下而上分別位 於電極14之間、電通道19之間及凸塊17之間，使上 述二電極14分別通過對應之電通道19及凸塊17與發 熱晶片之Ρ極和Ν極相連，避免在發光二極體之 工作過程中造成短路。 該透光體15為一上表面為弧形凸面之塑膠透鏡 或玻璃透鏡，該透光體15之下表面與膠體13之上表 面及基座11之上表面相貼合。該透光體15可適當彙 聚射出膠體13之發散光線，提高發光晶片12之光利 用率。 工作時，發光晶片12產生之熱量傳遞至散熱體 16和基座11上，並沿著所述散熱體16和基座11向 下傳遞，最後散發至周圍空氣中。由於散熱體16之導 熱率高於基座11之導熱率，可加快熱量向下傳遞之速 度，提升本實施例中發光二極體1Q之散熱效 外’散熱體16内形成之大量孔隙可大大增加散熱體 16與空氣之接觸面積，使發光晶片12工作時產生之 熱量可迅速散發’進-步提高了上述發光二極體1〇 之散熱效率。 9 201003978 本實施例中所述之基座11為金屬基座n，為將 基座Π之左右二部分分隔為電絕緣之二部分，散熱體 Μ需沿徑向貫穿所述基座u。可以理解地，當所述基 座U由陶瓷材料製成時，散熱體則無須沿徑向貫 穿上述基座11。並且，當基座U由陶瓷材料製成時， 則須在基座11内設置電通道19。 综上所述 專利申請。惟 熟悉本案技藝 或變化’皆應 、，本發明符合發明專利之要件，爰依法提出 '斤述者僅為本發明之較佳實施例，舉凡 士，/、心 ^ 美依本發明精神所作之等效修飾 申請專利範圍内。 201003978 【圖式簡單說明】 圖1為一覆晶式發光二極體之剖面示意圖。 【主要元件符號說明】 發光二極體 10 基座 11 碗杯 112 發光晶片 12 侧接觸面 122 膠體 13 電極 14 透光體 15 散熱體 16 突出部 162 側面 163 凸塊 17 螢光粉 18 電通道 19 11201003978 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a light-emitting diode, and more particularly to a heat-dissipating structure of a light-emitting diode. [Prior Art] A Light Emitting Diode emits energy in the form of luminescence by utilizing a change in the energy band level when electrons and holes in a semiconductor material are combined. The light-emitting diode has been widely used in various fields such as advertising boards, traffic signs, and daily lighting because of its small size, long life, low driving voltage, fast reflection speed, and good shock resistance. A conventional light-emitting diode includes a susceptor, a light-emitting wafer on the pedestal, and a gel surrounding the periphery of the luminescent wafer. The illuminating wafer is electrically connected to the conductive elements on the pedestal by wires. The base is a flat metal plate. The heat generated by the illuminating wafer is first dissipated through the susceptor. However, when a light-emitting diode emits light, only about 10 to 20% of the energy consumed is converted into light energy, and the rest of the energy is converted into heat, which must be evacuated in time to ensure the normality of the light-emitting diode. jobs. SUMMARY OF THE INVENTION In view of the above, it is necessary to provide a light-emitting diode having better heat dissipation performance. 6 201003978 The light-emitting body 'includes a base, a cup, a light-emitting chip, a gel, an electrode, and a heat sink. The gel is filled into the cup, and the light-emitting wafer is fixed to the base, and the electrode is located under the base. And electrically connected to the light-emitting chip, the heat sink penetrates the pedestal in the axial direction, and transfers heat generated by the light-emitting chip to the outside. Further, a large amount of pores are formed inside the heat sink. In the above-mentioned light-emitting diode, the heat sink penetrates through the pedestal, and a large number of pores are formed in the light-emitting diode, so that heat generated by the light-emitting chip can be quickly transmitted outward from the light-emitting chip, thereby improving heat dissipation of the light-emitting diode. effectiveness. [Embodiment] Hereinafter, the present invention will be further described by taking a flip-chip type light-emitting diode as an example with reference to the drawings. 1 is a schematic cross-sectional view of a flip-chip light emitting diode 10. The light-emitting diode 10 includes a base H, a light-emitting chip 12, a glue 13, a second electrode 14, a light-transmitting body 15, and a heat sink 16. The susceptor 11 is made of a heat conductive material such as metal, ceramic, or the like. In this embodiment, the material of the susceptor 11 is a metal such as copper or aluminum. A bowl 112 is formed on the upper portion of the base u. The side surface of the cup 112 is formed with a highly reflective coating such as gold or silver to enhance the reflectance of light and increase the brightness of the LED 10. The luminescent wafer 12 is inverted within the bowl 112 and electrically coupled to the susceptor 11 by two solder bumps 17. The illuminating wafer 12 has a p-pole 7 201003978 and an N-pole two-electrode 14'. wherein the thickness of the n-pole is greater than the thickness of the P-pole, a step is formed between the P-pole and the N-pole, and a side contact is formed in the middle of the luminescent wafer 12. Face 122. The colloid 13 is filled in the cup 112 for fixing the luminescent wafer 12 into the cup 112 to prevent the luminescent wafer 12 from being damaged by the external impact or the like. The material forming the colloid 13 may be epoxy resin, polyimine, or acrylic. The colloid 13 is filled with a phosphor 18 for cooperating with the luminescent wafer 12 to obtain a desired wave of light. The electrodes 14 are disposed under the susceptor u, and the electrodes 14 are separated from each other and are in contact with the bottom surface of the susceptor n. The electrode 14 and the light-emitting chip 12 are electrically connected to each other through the bump 17 and the electrical path 19 penetrating the susceptor 11. The material of the 5th electric passage 19 can be > + m „ The stalk shell T is a mixture of metal, metal and sapphire compound, graphite or graphite and resin, and its conductivity is two in the material of the pedestal 11 It can be understood that, since the susceptor U in this embodiment is a conductive Λ, it is not necessary to provide the electric passage 19, and the material: 'the pedestal 11 also directly utilizes the bump 17 to realize the seat 11 The electrode 14 is electrically connected to the # Η / ^ / metal base wafer 12 . The heat sink 16 is disposed at the middle of the base 11 and penetrates the base 11 in the axial direction. The 埶 埶 士 丸 丸 丸 丸 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 体 体 体 体 体 体 体 体 体 体 体 体 体 体 体 体 体The heat can be rapidly transferred down the heat sink body 16 to form a large amount of pores inside the body of the gas body 16 to improve the thermal conductivity of the legacy heat body 16. 201003978 The heat sink body 16 has a protrusion into the cup 112. The protruding portion 162 of the protrusion 162 is in contact with the side contact surface 122 of the light-emitting chip 12, so that the light-emitting chip 12 can be accurately positioned for easy positioning. The illuminating wafer 12 is aligned with the bump 17 on the pedestal η. The heat radiating body 16 penetrates the lower portion of the susceptor 11 in the radial direction, and divides the susceptor 11 into two parts of the left and right sides of the electrical insulation and is located from the bottom to the top. Between the electrodes 14, between the electrical channels 19 and between the bumps 17, the two electrodes 14 are respectively connected to the drain and the drain of the heat generating wafer through the corresponding electrical channels 19 and the bumps 17, thereby avoiding the LEDs. The light-transmissive body 15 is a plastic lens or a glass lens whose upper surface is a curved convex surface, and the lower surface of the light-transmitting body 15 is attached to the upper surface of the colloid 13 and the upper surface of the base 11. The light-transmitting body 15 can appropriately condense the divergent light emitted from the colloid 13 to improve the light utilization efficiency of the light-emitting chip 12. During operation, the heat generated by the light-emitting chip 12 is transferred to the heat sink 16 and the susceptor 11, and The heat dissipating body 16 and the pedestal 11 are transmitted downward and finally radiated into the surrounding air. Since the thermal conductivity of the heat dissipating body 16 is higher than the thermal conductivity of the susceptor 11, the speed of heat transfer downward can be accelerated, and the illuminating in the embodiment is improved. Diode 1Q's heat dissipation effect 'heat radiator 16 inner shape The large number of apertures can greatly increase the contact area of the heat sink 16 with the air, so that the heat generated by the operation of the light-emitting chip 12 can be quickly dissipated, and the heat dissipation efficiency of the light-emitting diode 1 is improved. 9 201003978 In this embodiment, The pedestal 11 is a metal pedestal n, which is a part that divides the left and right portions of the susceptor 为 into two parts, and the heat dissipating body is not required to penetrate the susceptor u in the radial direction. It is understood that when When the base U is made of a ceramic material, the heat sink does not need to penetrate the base 11 in the radial direction. Moreover, when the base U is made of a ceramic material, an electric passage 19 must be provided in the base 11. In summary, the patent application. However, if the invention is in accordance with the requirements of the invention patent, the invention is in accordance with the requirements of the invention patent, and it is only a preferred embodiment of the invention, which is based on the spirit of the invention. The equivalent modification is within the scope of the patent application. 201003978 [Simple description of the drawing] Fig. 1 is a schematic cross-sectional view of a flip-chip emitting diode. [Description of main components] Light-emitting diode 10 Base 11 Cup 112 Photovoltaic wafer 12 Side contact surface 122 Colloid 13 Electrode 14 Transmissive body 15 Heat sink 16 Projection 162 Side 163 Bump 17 Fluorescent powder 18 Electrical channel 19 11