CN101644725B - 在可重复使用的基板上制造探针卡的微机电探针 - Google Patents
在可重复使用的基板上制造探针卡的微机电探针 Download PDFInfo
- Publication number
- CN101644725B CN101644725B CN200910128922XA CN200910128922A CN101644725B CN 101644725 B CN101644725 B CN 101644725B CN 200910128922X A CN200910128922X A CN 200910128922XA CN 200910128922 A CN200910128922 A CN 200910128922A CN 101644725 B CN101644725 B CN 101644725B
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- China
- Prior art keywords
- probe
- substrate
- sacrifice layer
- mems
- tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000000523 sample Substances 0.000 title claims abstract description 228
- 239000000758 substrate Substances 0.000 title claims abstract description 102
- 238000000034 method Methods 0.000 claims description 57
- 238000007639 printing Methods 0.000 claims description 31
- 238000005516 engineering process Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000010276 construction Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000013461 design Methods 0.000 description 8
- 238000000465 moulding Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000009172 bursting Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 241000270295 Serpentes Species 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06733—Geometry aspects
- G01R1/06744—Microprobes, i.e. having dimensions as IC details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06716—Elastic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06716—Elastic
- G01R1/06727—Cantilever beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/186,458 | 2008-08-05 | ||
US12/186,458 US8089294B2 (en) | 2008-08-05 | 2008-08-05 | MEMS probe fabrication on a reusable substrate for probe card application |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101644725A CN101644725A (zh) | 2010-02-10 |
CN101644725B true CN101644725B (zh) | 2013-03-13 |
Family
ID=41652326
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910128922XA Expired - Fee Related CN101644725B (zh) | 2008-08-05 | 2009-03-10 | 在可重复使用的基板上制造探针卡的微机电探针 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8089294B2 (zh) |
JP (1) | JP2010038900A (zh) |
KR (1) | KR101129624B1 (zh) |
CN (1) | CN101644725B (zh) |
TW (1) | TWI411783B (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201135239A (en) * | 2010-04-02 | 2011-10-16 | Pleader Yamaichi Co Ltd | High-frequency vertical elastic probe structure |
CN102486481B (zh) * | 2010-12-01 | 2014-08-06 | 励威电子股份有限公司 | 高频垂直式弹性探针结构 |
JP5868239B2 (ja) * | 2012-03-27 | 2016-02-24 | 株式会社日本マイクロニクス | プローブ及びプローブカード |
KR101299725B1 (ko) * | 2012-04-30 | 2013-08-28 | 디플러스(주) | 좌굴 프로브 핀 |
CN116183986A (zh) * | 2014-12-30 | 2023-05-30 | 泰克诺探头公司 | 用于测试头的接触探针的制造方法 |
KR20230019226A (ko) * | 2014-12-30 | 2023-02-07 | 테크노프로브 에스.피.에이. | 복수의 테스트 헤드용 접촉 프로브를 포함하는 반제품 및 이의 제조 방법 |
TWI750721B (zh) * | 2015-12-28 | 2021-12-21 | 美商色拉頓系統公司 | 系統與觀察及測試受測試器件(DUTs)陣列之複數個探針模組之定位方法 |
US9774117B1 (en) | 2016-03-22 | 2017-09-26 | Northrop Grumman Systems Corporation | Resilient miniature mechanical support that can also serve as an electrical connector |
US9801269B1 (en) | 2016-05-10 | 2017-10-24 | Northrop Grumman Systems Corporation | Resilient miniature integrated electrical connector |
TWI598595B (zh) * | 2016-10-31 | 2017-09-11 | 穩懋半導體股份有限公司 | 改良式同軸探針結構 |
US10782342B2 (en) * | 2016-11-21 | 2020-09-22 | Si-Ware Systems | Integrated optical probe card and system for batch testing of optical MEMS structures with in-plane optical axis using micro-optical bench components |
CN108663553B (zh) * | 2017-03-29 | 2022-01-25 | 上海中船电气有限公司 | 一种接触式半导体材料测试头 |
KR101958351B1 (ko) * | 2017-08-04 | 2019-03-15 | 리노공업주식회사 | 검사프로브 및 이를 사용한 검사장치 |
JP2019160937A (ja) * | 2018-03-09 | 2019-09-19 | 東京エレクトロン株式会社 | 位置補正方法、検査装置及びプローブカード |
KR102068699B1 (ko) * | 2018-08-24 | 2020-01-21 | 주식회사 에스디에이 | 레이저를 이용한 반도체 검사용 멤스 프로브의 제조방법 |
EP3651479B1 (de) | 2018-11-08 | 2022-06-01 | Usound GmbH | Herstellungsverfahren für zumindest eine membraneinheit eines mems-wandlers |
JP1646397S (zh) * | 2019-05-21 | 2019-11-25 | ||
KR102388030B1 (ko) * | 2020-07-15 | 2022-04-20 | (주)엠투엔 | 프로브 핀, 이를 제조하는 방법 및 이를 구비하는 프로브 카드 |
CN111983272B (zh) * | 2020-08-14 | 2021-02-12 | 强一半导体(苏州)有限公司 | 一种导引板mems探针结构制作方法 |
CN116223866B (zh) * | 2023-05-10 | 2023-08-01 | 上海泽丰半导体科技有限公司 | 一种模块化探针卡及探针卡制造方法 |
CN116430088B (zh) * | 2023-06-13 | 2023-11-24 | 南方科技大学 | 探针及其制备方法 |
Citations (4)
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CN1735810A (zh) * | 2002-11-25 | 2006-02-15 | 佛姆费克托公司 | 探针阵列及其制造方法 |
CN1837830A (zh) * | 2005-03-22 | 2006-09-27 | 旺矽科技股份有限公司 | 弹性微接触元件及其制造方法 |
CN1866407A (zh) * | 2006-05-31 | 2006-11-22 | 北京大学 | Mems力学微探针及其制备方法 |
CN101131400A (zh) * | 2006-08-21 | 2008-02-27 | 南茂科技股份有限公司 | 合金探针的微机电制造方法 |
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- 2009-03-04 TW TW098107009A patent/TWI411783B/zh not_active IP Right Cessation
- 2009-03-10 CN CN200910128922XA patent/CN101644725B/zh not_active Expired - Fee Related
- 2009-03-19 JP JP2009068075A patent/JP2010038900A/ja active Pending
- 2009-03-31 KR KR1020090027205A patent/KR101129624B1/ko not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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US20100033201A1 (en) | 2010-02-11 |
TWI411783B (zh) | 2013-10-11 |
KR101129624B1 (ko) | 2012-03-27 |
KR20100017042A (ko) | 2010-02-16 |
JP2010038900A (ja) | 2010-02-18 |
TW201007169A (en) | 2010-02-16 |
CN101644725A (zh) | 2010-02-10 |
US8089294B2 (en) | 2012-01-03 |
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