TW546478B - Suspension-arm type testing card and its manufacturing method - Google Patents
Suspension-arm type testing card and its manufacturing method Download PDFInfo
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- TW546478B TW546478B TW91100120A TW91100120A TW546478B TW 546478 B TW546478 B TW 546478B TW 91100120 A TW91100120 A TW 91100120A TW 91100120 A TW91100120 A TW 91100120A TW 546478 B TW546478 B TW 546478B
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546478546478
五、發明說明(1) ^〜 --- 【發明的應用範5J】 於-種使用微機;::$測°式卡及其製造方法’特別是關 製造方法。^技術製造之一體成型懸臂式測試卡及^ 【發明的背景】 由於積體電妝一 性測試作為品質營=件產品在出廠前必須先經過嚴格的電 求。配合現今積j,以確保積體電路元件的品質符合f 傾向於直接在尚去八 另,、兀仵的測試亦V. Description of the invention (1) ^ ~ --- [Inventive application range 5J] The following uses a microcomputer: :: $ ; ° type card and its manufacturing method ', especially the manufacturing method. ^ Technical manufacturing of one-piece cantilever test card and ^ [Background of the invention] Because the integrated electrical makeup test is a quality test, a product must pass strict power requirements before it leaves the factory. Cooperate with today's product j to ensure that the quality of integrated circuit components meets f. It tends to go directly to the other.
Dr〇bin λ , ^ 刀副之晶圓上進行(on wafer ,有利於及早發現不良品以節省後續制_ β 的成本。此外,由於㈣電路元件= = ί袭 間距(Pitch)越來越窄,、/曰0線路在度越來越高而 〆 :^乍也增加測置上的困難度。 月lJ吊吏用的環氧樹脂測試卡( 而言,其製作方式菩以又 下WP〇xy Probe card) 路板上,不僅4;= 針一根一根焊接於電 力,不符合經濟效;^產方:且需耗費大量時間與人 以控制品質與提升良率的問豆ϋ =作會有難 最高探針密度亦有所阳生丨、"斤此測试的取小間距和 圍不廣,並且在洌1二難’:致f性能無法提升且應用範 造成破ϊ ☆施壓過大時探針又容㈣銲塾與凸塊 於是為改進傳統測試卡的效能, 盥技術合讀(e 1〜t ” 1 y y y牛之寬子tl件 r'nf 9 ^ EjeCtr〇nic Component and Technology 化⑼⑶)中所提出的一篇名為” New ProbeDr〇bin λ, ^ on the wafer of the knife (on wafer, which is beneficial to early detection of defective products to save the cost of subsequent manufacturing _ β. In addition, as the circuit element = = ί Pitch is getting narrower and narrower , / / 0 line is getting higher and higher: ^ At first, it also increases the difficulty of measurement. The epoxy resin test card used by the official (in terms of its production method, the next WP.) xy Probe card) Not only 4; = Pins are welded to electricity one by one, which is not economical; ^ Producer: It takes a lot of time and people to control quality and improve yield. There will be difficulties with the highest probe density. Quot; This test takes a small distance and is not wide, and it is difficult in 1: the f performance cannot be improved and the application range is broken. ☆ pressure When the probe is too large, it can accommodate solder joints and bumps. In order to improve the performance of the traditional test card, the technology is read together (e 1 ~ t) 1 yyy wide cow tl pieces r'nf 9 ^ EjeCtr〇nic Component and Technology A new article named "New Probe"
第4頁 546478Page 4 546478
^rrr"ei〇r FUU_Wafer' C —— be 的文早,其中所描述之測試卡具有一 針結構,t望透過懸臂式的探針結構之缓衝效 寺木針都能接觸到欲測量之銲墊與凸塊並減少探針對銲墊盘X 凸塊造成的破壞。但是此結構需要 ^ 以控制。一作費日寸費力’而且其可靠度與良率都難 【發明之目的與概述】 、為解決以上習知技術的問題,並製造符合低成本、言 腳數(々Mgh Pln count)、窄間距(fine pUch)以及能大= 生產等條件的測試丨,本發明提供一種懸臂式測試卡,利 2微,曲的懸臂式結構提供緩衝,使每根探針都能接觸到 欲測量之銲墊與凸塊並減少探針對銲墊與凸塊造成的破 壞,其金屬懸臂與探針為一體成型,所以可達到適當之可 靠度。 田 本發明之懸臂式測試卡及其製造方法是利用微機電 (M EMS’ micro electro-mechanical system)技術來製造 一體成型之測試卡,不需要再另外黏合或焊接探針。$本發 明應用犧牲層(sacri f icial layer)的概念製造懸臂式結 構,再配合雙金屬層(bim〇rph)之間因不同金屬所產生的 應力差異設計懸臂的微翹曲程度;此外,配合微機電技 術’探針可以製作成為矩陣(a r r a y )的形式,以符合晶片 接點(包含銲墊及凸塊)的尺寸和間距越來越小以及數目越 來越多的趨勢。^ rrr " ei〇r FUU_Wafer 'C ——be Wenzao, the test card described therein has a needle structure, and the buffer effect temple wood needles through the cantilever-type probe structure can all contact the Pads and bumps and reduce damage to the pad X bumps by the probe. But this structure requires ^ to control. It takes a lot of time and effort ”and its reliability and yield are difficult. [Objective and Overview of the Invention] In order to solve the problems of the above-mentioned conventional technology, and to produce low-cost, 言 Mgh Pln count, narrow pitch (Fine pUch) and testing that can be large = production, etc. The present invention provides a cantilevered test card, which is 2 micrometers, and a curved cantilevered structure provides cushioning so that each probe can contact the pad to be measured. With the bump and reducing the damage of the probe to the pad and the bump, the metal cantilever and the probe are integrally formed, so that the appropriate reliability can be achieved. Tian The cantilever test card and its manufacturing method of the present invention use the micro electromechanical (M EMS ’micro electro-mechanical system) technology to manufacture an integral test card, without the need for additional bonding or welding probes. The present invention applies the concept of a sacri ficcial layer to manufacture a cantilever structure, and then cooperates with the bimetal layer (bim〇rph) to design the degree of cantilever micro-warpage according to the difference in stress generated by different metals; Micro-electro-mechanical technology 'probes can be made into the form of an array (array) to meet the trend of smaller and smaller sizes and increasing numbers of wafer contacts (including solder pads and bumps).
M6478 五、發明說明(3) 根據本 卡,其包含 孔内並填入 導通;以及 針,金屬懸 成,金屬懸 連接。其中 料所形成, 微翹曲的金 保每一根探 少對晶片接 根據本 卡的測試方 牲層;於犧 層的微孔並 内填入導電 成金屬探針 犧牲層形成 不同金屬材 同種類金屬 形成一微翹 探針的厚度 制其翹曲程 為使對 發明揭 有:— 導電金 一金屬 臂與金 臂連接 金屬懸 本發明 屬懸臂 針都能 點的傷 發明揭 法,包 牲層表 覆蓋犧 金屬並 ;以及 一金屬 料所形 材料造 曲結構 和選擇 度。 本發明 式_試 孑L , 穿 之電路 金屬探 料所形 成電性 金屬材 異形成 果,確 觸並滅 式剛試 形成犧 滿犧牲 於穿孔 表面形 並去除 分別由 選用不 屬探針 與金屬 的 路的技術,本發明提供' —種懸臂 基板,此基板具有貫穿基板的穿 屬用來提供基板表面至基板底面 懸臂’金屬懸臂之頂端表面具有 屬探針分別由不同種類的金屬材 於基板之填入導電金屬的穿孔達 臂與金屬探針分別由不同種類的 利用不同金屬間所產生的應力差 ’在測試時能產生應力緩衝的效 與晶片接點(包含銲墊及凸塊)接 害0 露的技術,本發明提供一種懸臂 含有:提供一基板,於基板表面 面定義微孔,並沉積金屬層至填 牲層,形成貫穿基板的穿孔,並 連接於犧牲層的微孔;於金屬層 配合該金屬探針位置定義金屬層 懸臂。其中金屬懸臂與金屬探針 成,並利用金屬懸臂與金屬探針 成的應力差異,使金屬懸臂與金 ’其微赵曲結構可利用金屬懸臂 不同種類金屬材料所造成的應力 的目的、構造特徵及其功能有進一步 1 11 _ 1 II 1 第6頁 546478 五、發明說明(4) 了解,鉍配合圖示詳細說明如下·· 【詳細說明】 是利:::懸臂式測試卡及其製造方法的具體實施方法 micro electro-.echan.cal system)技術來製造—體成型之測試卡,以及應用 ”又、,屬層的概念製造微翹曲的縣臂έ士構.並"且太 运 本、高腳數t h t 為矩陣親’以符合低成 ^ , ^ . . S Pln Count)、窄間距(fine Pltch;)和 月b大里生產的需求。 ^ j微機電技術實施本發明的製作流程詳述如下: 制圖::為本發明之懸臂式㈣^ 程不意圖,本發明之懸臂式測試卡實施例的 衣仏 包含有下列步驟:提供一基板10,於基板10表面 形成-?牲層20(如第1圖所示);以光微影技術於犧牲層 巧表面定義一對微孔2 1,2 2 (如第2圖所示);以電鍍方法沉 積銅金屬〃形成第一金屬層3〇至填滿微孔21,22並覆蓋犧牲儿 層2 0 (如第3圖所不);以電鍍方法沉積鎳金屬形成第二金 屬層40至覆蓋第一金屬層3〇(如第4圖所示);形成一對貫 穿基板ίο的穿孔u,12,並於以電鍍方法在穿孔U,12内填 入銅金屬,且穿孔丨丨,丨2對準連接於犧牲層之微孔 、 21,22(如第5圖所示);以光微影技術定義第二金屬層4〇以 形成一對金屬探針41,42(如第6圖所示);依據金屬探針 41,4 2的位置以光微影技術定義第一金屬層3 〇形成金屬懸 臂3 1,3 2 (如第7圖所示);最後去除犧牲層2 〇即形成一具有M6478 V. Description of the invention (3) According to this card, it contains holes and is filled with continuity; and pins, metal suspension, metal suspension connection. The material is formed, each of the micro-warped gold shields is connected to the wafer according to the test layer of the card; the micro-holes in the sacrificial layer are filled with conductive metal probe sacrificial layers to form different metal materials of the same kind. The thickness of the metal forming a micro-warped probe is determined by its warpage to make the invention uncovered:-a conductive gold-metal arm is connected to the metal arm by a metal suspension The table covers sacrificial metals; and the bending structure and selectivity of a material shaped by a metal material. According to the formula of the present invention, the test L, the electrical metal material formed by the circuit metal probe that is worn, forms a different result, and the touch-and-extinguish type just tries to form the sacrificial sacrifice at the shape of the perforated surface and removes the use of non-probe and metal. The present invention provides a 'cantilever substrate, which has a penetrating through the substrate to provide the substrate surface to the substrate bottom cantilever.' The top surface of the metal cantilever has metal probes made of different types of metal materials on the substrate. The perforated arm and the metal probe filled with conductive metal are made of different kinds of stress differences between different metals, which can generate stress buffering effect during testing and contact with the wafer contacts (including solder pads and bumps). According to the disclosed technology, the present invention provides a cantilever comprising: providing a substrate, defining a micro hole on the surface of the substrate, and depositing a metal layer to the filling layer to form a perforation penetrating the substrate and connected to the micro hole of the sacrificial layer; the metal The layer fits the metal probe position to define a metal layer cantilever. Among them, the metal cantilever is formed with a metal probe, and the difference in stress between the metal cantilever and the metal probe is used to make the metal cantilever and gold 'its micro- Zhaoqu structure can use the purpose and structural characteristics of the stress caused by different kinds of metal materials And its functions are further 1 11 _ 1 II 1 Page 6 546478 V. Description of the invention (4) Understand that the detailed description of the bismuth coordination diagram is as follows: [Detailed description] is beneficial: :: cantilever test card and its manufacturing method Specific implementation method of micro electro-.echan.cal system) technology to manufacture-body forming test cards, and the application of the concept of "layers" to manufacture slightly warped county arms. And "; and Taiyun This book and the high pin count tht are matrix matrixes to meet the requirements of low production ^, ^.. S Pln Count), fine pitch (fine Pltch;), and monthly production. ^ J Micro-electro-mechanical technology implementation process of the present invention The details are as follows: Drawing: It is not intended for the cantilever type process of the present invention. The clothing of the embodiment of the cantilever test card of the present invention includes the following steps: a substrate 10 is provided and formed on the surface of the substrate 10; Layer 20 (such as (Shown in Figure 1); a pair of microholes 2 1, 2 2 are defined on the sacrificial layer surface using photolithography (as shown in Figure 2); copper metal is deposited by electroplating to form a first metal layer 3. To fill the micro holes 21, 22 and cover the sacrificial child layer 20 (as shown in FIG. 3); deposit nickel metal by electroplating to form a second metal layer 40 to cover the first metal layer 30 (as shown in FIG. 4) (Shown); forming a pair of perforations u, 12 penetrating through the substrate, and then filling the perforations U, 12 with copper metal by electroplating, and the perforations 丨, 丨 2 are aligned with the micro holes connected to the sacrificial layer, 21, 22 (as shown in FIG. 5); the second metal layer 40 is defined by photolithography technology to form a pair of metal probes 41, 42 (as shown in FIG. 6); The position is defined by the photolithography technology. The first metal layer 3 〇 forms a metal cantilever 3 1, 3 2 (as shown in FIG. 7); finally, the sacrificial layer 2 〇 is removed to form a
546478 五、發明說明(5) 雙金屬層的微翹曲金屬懸臂結構5 0 (如第8圖所示 在上述本發明實施例的製造方法中, 縣'^ 探:十分別由銅與鎳金屬所製*,本發明實施例; 懸臂與鎳金屬探針之不同種類金屬材料間的應、至 該金屬懸臂與該金屬探針形成一微翹曲結才冓,並㉒:八: 懸臂與金屬探針的厚度所造成之應力差異控制其二二 度。本發明的金屬懸臂與金屬探針可透過選擇其^ 王 類金屬材料造成應力差異來製造微輕曲結冑 人, 金屬僅為其中一例而已。 走屬和錄546478 V. Description of the invention (5) The micro-warped metal cantilever structure 50 of the bimetal layer (as shown in FIG. 8) In the manufacturing method of the embodiment of the present invention described above, the test method is made of copper and nickel respectively. Manufactured *, an embodiment of the present invention; the difference between the cantilever and the nickel metal probe of different types of metal materials, until the metal cantilever and the metal probe form a slightly warped knot, and: :: cantilever and metal The difference in stress caused by the thickness of the probe controls its second degree. The metal cantilever and the metal probe of the present invention can be used to make light and slightly curved knots by selecting the ^ king metal material to cause the difference in stress. Metal is only one example. That's it.
此外,本發明的金屬懸臂與金屬探針需選用 性質較佳以及具有適當應力差異之金屬材料製成微二 雙金屬層結構,並且需選用具有適當硬度之金屬做=金屬 採針,以利於在測試時可順利穿透銲墊或凸塊表面:=化 層,但不會造成銲墊或凸塊的破壞。因此,金屬懸^ $ 擇銅與銘金屬材料其中之一所形成,金屬探針則由錄與= 金屬材料其中之一所形成。填入基板穿孔以提供該基板^ 面至該基板底面之電路導通的導電金屬,可使用導電性質 較佳的金屬材料如銅、銘、金、鎳和銀等金屬材料,同時 可選擇與金屬懸臂部分相同之金屬以減低介面電阻。形成 金屬層以及沉積金屬的方法亦不僅限於使用電鍍法,可選 用濺鍍法、蒸鍍法、電鍍法和化學汽相沉積法其中之一方 法;本發明所使用^基板可為單晶矽(slUc〇n wafer)、 石英(quartz)、玻璃(Hass)及陶瓷(ceram 中之一;應用本發明使用的微機電技術可將探In addition, the metal cantilever and metal probe of the present invention need to be made of metal materials with better properties and appropriate stress differences to make the micro-two-bimetal layer structure, and a metal with appropriate hardness should be used as a metal picking needle to facilitate During the test, it can penetrate the surface of the pad or bump smoothly: = layer, but it will not cause damage to the pad or bump. Therefore, the metal suspension is formed of one of copper and metal, and the metal probe is formed of one of metal and metal. Fill the through hole of the substrate to provide a conductive metal for conducting the circuit from the substrate to the bottom surface of the substrate. Metal materials with better conductive properties, such as copper, metal, gold, nickel, and silver, can be used. Partially identical metals to reduce interface resistance. The method of forming a metal layer and depositing a metal is not limited to the use of electroplating, and one of sputtering, evaporation, electroplating, and chemical vapor deposition methods may be selected; the substrate used in the present invention may be single crystal silicon ( slUcon wafer), quartz (quartz), glass (Hass) and ceramic (ceram); the application of the micro-electromechanical technology used in the present invention can
546478 — ——- 、發明說明(6) 測試積體電路晶片將金屬探針製作成為 以應用貫施例更進一步闡述本發明,… 一 發明之懸臂式測試卡接合電路板的示音乐9圖所示為本 式測試卡包含有:—基板1〇,此基板=二=發明之懸臂 穿孔11,12,穿孔u,12r 1埴入導带二對貝穿基板的 面至基板底面之電路導通;以及— :“:來提供基板表 懸臂結構5〇之頂端表面具有金屬探針:二_50,金屬 32與金屬探針41,42形成雙金屬層,並利錐懸臂31, =同金屬造成的應力差異使得金屬懸臂二W層之間 ,,金屬懸臂結構5 0並對準連接於美^ 形成微翹曲 孔達成電性連接。如第9圖所示广本之填入導電金屬 喊卡可接合—提供 本發明之懸臂式測 實際測量上的需要。玉” 、u的印刷電路板60以配合 【發明之功效】 八本發明之懸臂式測試卡盥1制、止士 此二Γ合微機電技術製造出开是使用犧牲層的 此亚 >又有可靠度的問題; 版成型之懸臂式結構,因 7微翹曲懸臂結構、;2為利用雙金屬層結構製 確保每-根探針都和欲、、=:提供應力緩衝的效果,並 接觸,同時對晶片接點的片接點(包含銲墊和凸塊) :::用之微機電 ::會降低。此外,應用本發 且付合低成本、高腳數(二仏針製作成為矩陣的形式,並 Pltch)和能大量生產 13111 count)、窄間距(fine 雖然本發明之實施:"i露如上、、 所述’然其並非用以 546478 五、發明說明(7) 定本發明,任何熟習相關技藝者,在不脫離本發明之精神 和範圍内,當可作些許之更動與潤飾,因此本發明之專利 保護範圍須視本說明書所附之申請專利範圍所界定者為 準。 第10頁 546478 圖式簡單說明 第1圖至第8圖所示為本發明之懸臂式測試卡及其製造 方法的實施例製作流程示意圖;及 第9圖所示為本發明之懸臂式測試卡接合電路板的示 意圖。 【圖式符號說明】 10 基 11 穿 12 穿 20 犧 21 微 22 微 30 第 31 金 32 金 40 第 41 金 42 金 50 金 60 印 板 孔 孔 牲層 孔 孔 一金屬層 屬懸臂 屬懸臂 二金屬層 屬探針 屬探針 屬懸臂結構 刷電路板546478 — — —, Description of the invention (6) Test integrated circuit wafer The metal probe is made to further illustrate the present invention by applying the embodiments, ... A cantilevered test card of the invention is shown in Figure 9 of the circuit board Shown that this type of test card contains:-substrate 10, this substrate = two = cantilever perforations 11, 12, invention perforation u, 12r 1 into the conduction band two pairs of through the substrate to the bottom of the substrate circuit conduction; And: ":" to provide the top surface of the substrate cantilever structure 50 with metal probes: two_50, metal 32 and metal probes 41, 42 form a double metal layer, and a sharp cone cantilever 31, = caused by the same metal The difference in stress makes the metal cantilever between the two W layers, the metal cantilever structure 50 is aligned and connected to the United States ^ to form a micro warped hole to achieve electrical connection. As shown in Figure 9, Guangben's filled with conductive metal shout card can Joining—Provide the actual measurement needs of the cantilever type measurement of the present invention. The jade ", u printed circuit board 60 to cooperate with the [effect of the invention] Eight cantilever type test cards of the present invention 1 system, only two of them can be combined. Mechatronics technology This sublayer of the layer has another reliability problem; the cantilever structure of the plate forming, due to the 7 micro-warped cantilever structure, and 2 is the use of a bimetallic layer system to ensure that each probe is compatible with, and =: Provides the effect of stress buffering and contacts, and the chip contacts (including solder pads and bumps) of the wafer contacts at the same time ::: Used by MEMS :: Will be reduced. In addition, the application of the present invention is compatible with low cost, high pin count (two pin needles are made into a matrix and Pltch), and mass production can be 13111 counts), narrow pitch (fine although the implementation of the present invention: " i 露 上 上) ", But it is not used for 546478. V. Description of the invention (7) Anyone skilled in the art can make some changes and retouch without departing from the spirit and scope of the invention. Therefore, the invention The scope of patent protection shall be determined by the scope of the patent application attached to this specification. Page 546478 Brief description of the drawings Figures 1 to 8 show the cantilever test card of the present invention and its manufacturing method. A schematic diagram of the manufacturing process of the embodiment; and FIG. 9 shows a schematic diagram of a cantilevered test card bonding circuit board of the present invention. [Illustration of Symbols] 10 base 11 wear 12 wear 20 sacrifice 21 micro 22 micro 30 31 gold 32 gold 40th 41 gold 42 gold 50 gold 60 printing plate hole hole layer layer hole hole 1 metal layer belongs to the cantilever cantilever two metal layer belongs to the probe belongs to the cantilever structure brush circuit board
第11頁Page 11
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI411783B (en) * | 2008-08-05 | 2013-10-11 | Winmems Technologies Co Ltd | Mems probe and the fabricaion method thereof |
TWI564566B (en) * | 2011-12-19 | 2017-01-01 | 日本麥克隆尼股份有限公司 | Wiring and manufacturing method for probe structure unit |
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2002
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI411783B (en) * | 2008-08-05 | 2013-10-11 | Winmems Technologies Co Ltd | Mems probe and the fabricaion method thereof |
TWI564566B (en) * | 2011-12-19 | 2017-01-01 | 日本麥克隆尼股份有限公司 | Wiring and manufacturing method for probe structure unit |
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