CN101630532B - 用于电可擦除可编程只读存储器的灵敏放大器及实现方法 - Google Patents
用于电可擦除可编程只读存储器的灵敏放大器及实现方法 Download PDFInfo
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- CN101630532B CN101630532B CN200810043634XA CN200810043634A CN101630532B CN 101630532 B CN101630532 B CN 101630532B CN 200810043634X A CN200810043634X A CN 200810043634XA CN 200810043634 A CN200810043634 A CN 200810043634A CN 101630532 B CN101630532 B CN 101630532B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/06—Sense amplifier related aspects
- G11C2207/063—Current sense amplifiers
Abstract
Description
Claims (11)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN200810043634XA CN101630532B (zh) | 2008-07-17 | 2008-07-17 | 用于电可擦除可编程只读存储器的灵敏放大器及实现方法 |
US12/501,435 US8169834B2 (en) | 2008-07-17 | 2009-07-12 | Sense amplifier used in electrically erasable programmable read-only memory and the implementing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN200810043634XA CN101630532B (zh) | 2008-07-17 | 2008-07-17 | 用于电可擦除可编程只读存储器的灵敏放大器及实现方法 |
Publications (2)
Publication Number | Publication Date |
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CN101630532A CN101630532A (zh) | 2010-01-20 |
CN101630532B true CN101630532B (zh) | 2012-07-11 |
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Family Applications (1)
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CN200810043634XA Active CN101630532B (zh) | 2008-07-17 | 2008-07-17 | 用于电可擦除可编程只读存储器的灵敏放大器及实现方法 |
Country Status (2)
Country | Link |
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US (1) | US8169834B2 (zh) |
CN (1) | CN101630532B (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101807422B (zh) * | 2010-03-26 | 2013-03-20 | 上海宏力半导体制造有限公司 | 读出放大电路 |
CN101916583B (zh) * | 2010-07-30 | 2015-12-09 | 上海华虹宏力半导体制造有限公司 | 灵敏放大器以及存储器 |
CN102243704B (zh) * | 2011-07-21 | 2014-04-02 | 我查查信息技术(上海)有限公司 | 用于二维码的定位系统、二维码的识别方法及设备 |
CN103093821B (zh) * | 2011-11-04 | 2016-11-09 | 上海华虹宏力半导体制造有限公司 | 一种嵌位电压产生电路 |
KR20130124749A (ko) * | 2012-05-07 | 2013-11-15 | 에스케이하이닉스 주식회사 | 감지 증폭 회로 및 이를 이용하는 반도체 장치 |
CN103177756B (zh) * | 2013-03-25 | 2016-03-23 | 西安紫光国芯半导体有限公司 | 动态存储器读操作下的省电方法及其列选择信号驱动电路 |
US9000846B2 (en) | 2013-06-11 | 2015-04-07 | Via Technologies, Inc. | Current mirror |
CN106601290B (zh) * | 2016-11-01 | 2018-10-26 | 中国科学院上海微系统与信息技术研究所 | 具有温度跟随特性的相变存储器读电路 |
CN108109660A (zh) * | 2016-11-24 | 2018-06-01 | 北京兆易创新科技股份有限公司 | 一种存储单元的读取方法及装置 |
JP2018195358A (ja) * | 2017-05-16 | 2018-12-06 | セイコーエプソン株式会社 | 不揮発性記憶装置、半導体装置、及び、電子機器 |
CN107799136B (zh) * | 2017-11-21 | 2021-01-22 | 上海华虹宏力半导体制造有限公司 | Sonos读时序电路 |
CN108536208B (zh) * | 2018-05-10 | 2020-09-25 | 上海华虹宏力半导体制造有限公司 | 偏置电流电路 |
CN108762358A (zh) * | 2018-07-24 | 2018-11-06 | 广州金升阳科技有限公司 | 一种电流源电路及其实现方法 |
JP2021110994A (ja) * | 2020-01-07 | 2021-08-02 | ウィンボンド エレクトロニクス コーポレーション | 定電流回路 |
CN111863053B (zh) * | 2020-07-27 | 2022-11-01 | 安徽大学 | 灵敏放大器、存储器和灵敏放大器的控制方法 |
CN112767975B (zh) * | 2021-02-10 | 2022-04-12 | 长鑫存储技术有限公司 | 灵敏放大器及其控制方法 |
US20230259149A1 (en) * | 2022-02-16 | 2023-08-17 | Sandisk Technologies Llc | Current mirror circuits |
CN116683897B (zh) * | 2023-08-04 | 2024-03-19 | 深圳市力生美半导体股份有限公司 | 比较器电路、集成电路和电子设备 |
CN117170453A (zh) * | 2023-08-30 | 2023-12-05 | 北京中电华大电子设计有限责任公司 | 参考电压产生电路及车规级芯片 |
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KR20050032124A (ko) * | 2002-09-04 | 2005-04-06 | 아트멜 코포레이숀 | 기억 장치내에 과소거된 비트를 복구하는 방법 |
CN1819061A (zh) * | 2004-11-12 | 2006-08-16 | 旺宏电子股份有限公司 | 存储器元件以及正确读取操作窗控制的方法 |
CN1848299A (zh) * | 2005-04-12 | 2006-10-18 | 株式会社东芝 | 非易失性半导体存储装置的基准电流生成电路 |
WO2007005634A1 (en) * | 2005-07-04 | 2007-01-11 | Micron Technology, Inc. | Low power multiple bit sense amplifier |
JP2007035242A (ja) * | 2005-06-24 | 2007-02-08 | Micronics Internatl Co Ltd | フラッシュメモリのリフレッシュ方法 |
WO2007078885A2 (en) * | 2005-12-28 | 2007-07-12 | Intel Corporation | Multi-level memory cell sensing |
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US6868025B2 (en) * | 2003-03-10 | 2005-03-15 | Sharp Laboratories Of America, Inc. | Temperature compensated RRAM circuit |
EP1505605A1 (en) * | 2003-08-06 | 2005-02-09 | STMicroelectronics S.r.l. | Improved sensing circuit for a semiconductor memory including bit line precharging and discharging functions |
US7286385B2 (en) * | 2005-07-27 | 2007-10-23 | International Business Machines Corporation | Differential and hierarchical sensing for memory circuits |
US7649781B2 (en) * | 2006-05-17 | 2010-01-19 | Freescale Semiconductor, Inc. | Bit cell reference device and methods thereof |
EP1858027A1 (en) * | 2006-05-19 | 2007-11-21 | STMicroelectronics S.r.l. | A sensing circuit for semiconductor memories |
US7471582B2 (en) * | 2006-07-28 | 2008-12-30 | Freescale Semiconductor, Inc. | Memory circuit using a reference for sensing |
KR100809334B1 (ko) * | 2006-09-05 | 2008-03-05 | 삼성전자주식회사 | 상변화 메모리 장치 |
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2008
- 2008-07-17 CN CN200810043634XA patent/CN101630532B/zh active Active
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2009
- 2009-07-12 US US12/501,435 patent/US8169834B2/en active Active
Patent Citations (6)
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KR20050032124A (ko) * | 2002-09-04 | 2005-04-06 | 아트멜 코포레이숀 | 기억 장치내에 과소거된 비트를 복구하는 방법 |
CN1819061A (zh) * | 2004-11-12 | 2006-08-16 | 旺宏电子股份有限公司 | 存储器元件以及正确读取操作窗控制的方法 |
CN1848299A (zh) * | 2005-04-12 | 2006-10-18 | 株式会社东芝 | 非易失性半导体存储装置的基准电流生成电路 |
JP2007035242A (ja) * | 2005-06-24 | 2007-02-08 | Micronics Internatl Co Ltd | フラッシュメモリのリフレッシュ方法 |
WO2007005634A1 (en) * | 2005-07-04 | 2007-01-11 | Micron Technology, Inc. | Low power multiple bit sense amplifier |
WO2007078885A2 (en) * | 2005-12-28 | 2007-07-12 | Intel Corporation | Multi-level memory cell sensing |
Also Published As
Publication number | Publication date |
---|---|
US20100014356A1 (en) | 2010-01-21 |
CN101630532A (zh) | 2010-01-20 |
US8169834B2 (en) | 2012-05-01 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131217 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20131217 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |