CN101626001B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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CN101626001B
CN101626001B CN2009101182928A CN200910118292A CN101626001B CN 101626001 B CN101626001 B CN 101626001B CN 2009101182928 A CN2009101182928 A CN 2009101182928A CN 200910118292 A CN200910118292 A CN 200910118292A CN 101626001 B CN101626001 B CN 101626001B
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semiconductor device
conductive part
interarea
electrode
sealing resin
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CN101626001A (zh
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鹿野武敏
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本发明涉及半导体装置及其制造方法。本发明的半导体装置具有半导体芯片(13f)。导电部(11f)设置在主面(MS)上，并且有具有导电性和延展性的材料构成。密封树脂部(15)具有与主面(MS)正对的表面(SF)。电极(12fu)设置在导电部(11f)上，并且在导电部(11f)和表面(SF)之间贯通密封树脂部(15)。由此，提供一种能够小型化的半导体装置。

Description

半导体装置及其制造方法
技术领域
本发明涉及半导体装置，特别是涉及具有半导体芯片和树脂密封部的半导体装置。
背景技术
作为逆变器(inverter)用途的半导体装置，有IGBT(Insulated GateBipolar Transistor，绝缘栅双极晶体管)和续流二极管(Free Wheel Diode)等的通过模塑树脂和绝缘片将多个半导体元件密封的功率模块。例如在日本专利申请公开2006-319084号公报中公开了一种这样的功率模块。
此外，作为被树脂密封的半导体装置的小型化技术，例如有在日本专利申请公开2003-007966号公报中公开的技术。根据该技术，半导体装置具备：散热衬底；配置在散热衬底上的半导体元件；各自的一端与该半导体元件的主电极电连接的多个主电极板；对散热衬底、半导体元件、以及多个主电极板进行树脂密封的树脂封装件。多个主电极板的每一个的另一端在树脂封装件的上表面侧向外部露出。树脂封装件通过模塑成形而整体地形成。
在上述日本专利申请公开2003-007966号公报的技术中，由于半导体芯片表面的电极和主电极板通过引线接合而连接，所以必须确保引线接合所需要的区域，存在半导体装置的进一步小型化困难的问题。此外，为了将主电极从半导体芯片表面正上方的树脂封装件面(上表面侧)取出，需要特殊的模具，存在招致制品成本上升的问题。
发明内容
因此，本发明的目的在于比较廉价地提供一种能够进一步小型化的半导体装置。
本发明的半导体装置具有：半导体芯片；导电部；密封树脂部；电极。半导体芯片具有主面。导电部设置在主面上，并且由具有导电性和延展性的材料构成。密封树脂部具有与主面正对的表面。电极设置在导电部上，并且在导电部和表面之间贯通密封树脂部。
本发明的半导体装置的制造方法，具有以下工序：
首先准备具有主面的半导体芯片。在该主面上，形成由具有导电性和延展性的材料构成的导电部。将形成了该导电部的半导体芯片配置在模具内。模具具有：相对于主面空出间隔而相向的内面；和以按压导电部的方式从内面突起的突起部。通过在模具内填充树脂后除去模具，形成密封树脂部，该密封树脂部具有：与主面正对的表面；和贯通导电部和表面之间的开口部。
根据本发明的半导体装置，
因为能够在半导体芯片的主面上的区域中设置电极，所以能够使半导体装置小型化。
此外因为导电部设置在半导体芯片的主面上，所以在平面设计中除了半导体芯片的区域以外不需要确保用于设置导电部的区域。因此能够进一步使半导体装置小型化。
本发明的上述和其它的目的、特征、方面、以及优点，通过与附图相关地理解的关于本发明的下面的详细的说明就能清楚了。
附图说明
图1是概略地表示本发明的实施方式1的半导体装置的结构的剖面图。
图2是概略地表示本发明的实施方式1的半导体装置的结构的平面图。
图3是与在未图示模塑树脂的情况下的图2对应的图
图4是概略地表示本发明的实施方式1的半导体装置的电路结构的图。
图5是概略地表示本发明的实施方式1的半导体装置的制造方法的第一工序的平面图。
图6～图9是概略地顺序地表示本发明的实施方式1中的半导体装置的制造方法的第一～第四工序的剖面图。
图10是概略地表示比较例的半导体装置的结构的剖面图。
图11是概略地表示本发明的实施方式2的半导体装置的结构的平面图。
图12是沿图11的XII-XII线的剖面图。
图13是概略地表示本发明的实施方式3的半导体装置的结构的剖面图。
具体实施方式
下面，基于附图对本发明的实施方式进行说明。
实施方式1
首先，使用图1～图4对本实施方式的半导体装置的结构进行说明。再有，图2和图3的各自的I-I线表示图1的剖面位置。
参照图1～图3，本实施方式的半导体装置是搭载(内置)了多个功率器件的传递模塑型的功率器件。该半导体装置具有：多个续流二极管13f(半导体芯片)；多个IGBT13i；多个电极接合焊接部11f(导电部)；电极接合焊接部11h；模塑树脂部15(密封树脂部)；主电极管脚12fu、12fn(电极)；主电极管脚12hp；多个引线14；多个外部电极引脚16；多个散热器17；高导热绝缘片40；多个芯片键合焊接部20f；以及多个芯片键合焊接部20i。
续流二极管13f和IGBT13i的每一个是功率器件，具有主面MS(在图3中所示的面)。而且，后述的续流二极管13f的阳极焊盘、和IGBT13i的发射极焊盘和控制焊盘在该主面MS上形成。
电极接合焊接部11f设置在续流二极管13f的主面MS上。此外，电极接合焊接部11h设置在散热器17上。该电极接合焊接部11f、11h由焊料、即具有导电性和延展性(在压力下的可塑性)的材料构成。
模塑树脂部15覆盖续流二极管13f和IGBT13i的各个主面MS。由此，模塑树脂部15具有与主面MS正对的表面SF。模塑树脂部15是含有树脂材料的构件。模塑树脂部15也可以还含有无机材料构成的填充材料。模塑树脂部15的材料优选是适合于传递模塑法的材料。即优选在树脂成形时具有充分流动性的材料。
主电极管脚12fu、12fn是对应于续流二极管13f部的电极，主电极管脚12hp是对应于散热器17部的电极。主电极管脚12fu、12fn设置在电极接合焊接部11f上，并且在电极接合焊接部11f和模塑树脂部15的表面SF之间贯通模塑树脂部15。主电极管脚12hp设置在电极接合焊接部11h上，并且在电极接合焊接部11h和模塑树脂部15的表面SF之间贯通模塑树脂部15。
高导热绝缘片40具有：绝缘体部18和铜箔19。绝缘体部18和铜箔19彼此重叠而整体地形成。绝缘体部18的材料是比模塑树脂部15的材料具有高导热性的绝缘体。该绝缘体例如是含有高导热填料的环氧树脂。铜箔19作为高导热绝缘片40的基材具有保护绝缘体18的作用。再有，代替铜箔19，也能够使用铝等的铜以外的金属构成的箔。
引线14是金属细线，例如由铝构成。
芯片键合焊接部20f和20i分别设置在续流二极管13f和IGBT13i下。
参照图4，一对IGBT13i分别具有发射极端子和集电极端子，作为用于主电流的输入输出的端子的主端子。IGBT13i是进行发射极端子和集电极端子之间的电流通路的开关的半导体开关元件。对应于施加到栅极G的控制信号而进行开关。
一方的IGBT13i的发射极和另一方的IGBT13i的集电极彼此连接，该连接部分对应于半导体装置的输出端子U。此外，该一方的IGBT13i的集电极端子和另一方的IGBT13i的发射极端子分别对应于半导体装置的输入端子P和N。此外在各IGBT13i上反并联地连接有续流二极管13f。通过该结构，以输入端子P的电位变为比输入端子N的电位高的电位的方式对输入端子P和N之间施加直流高电压，在该状态下对各栅极G施加控制信号，由此能够从输出端子U得到对应于控制信号的输出。
参照图1～图4，各IGBT13i具有对应于栅极G的控制焊盘(未图示)。该控制焊盘通过引线14与外部电极引脚16连接。此外各IGBT13i具有为了连接引线14的发射极焊盘(未图示)。此外，各IGBT13i的集电极(背面电极)通过芯片键合焊接部20i与散热器17连接。
各续流二极管13f在一侧(在图3图示的一侧)具有阳极焊盘(未图示)。该阳极焊盘通过引线14与IGBT13i连接。此外，在阳极焊盘上配置有电极接合焊接部11f。此外，各续流二极管13f的另一侧(在图3图示的一侧的相反侧)具有作为阴极的功能，通过芯片键合焊接部20f与散热器17连接。
参照图1～图3，主电极管脚12hp、12fu、12fn从模塑树脂部15的内部起，贯通表面SF向模塑树脂部15的外部突出。此外，主电极管脚12fu、12fn在模塑树脂部15内部与电极接合焊接部11f电连接。此外，主电极管脚12hp在模塑树脂部15内部与电极接合焊接部11h电连接。
散热器17设置在与续流二极管13f和IGBT13i的各自的主面MS的相反的面上。散热器17是由具有高导电性和导热性的材料构成的构件，例如是铜(Cu)制的板状构件(例如厚度3mm)。散热器17具有：作为布线通路的一部分的功能、和通过使从续流二极管13f和IGBT13i发生的热扩散而促进散热的功能。
接着，对本实施方式的半导体装置的制造方法进行说明。
主要参照图5和图6，形成树脂密封而成的结构。具体地，首先，续流二极管13f和IGBT13i，分别经由芯片键合部20f和芯片键合部20i与散热器17接合。具有外部电极引脚16的引脚框21以包围散热器17的方式配置。在续流二极管13f、IGBT13i、外部电极引脚16、和散热器17之间，为了形成图4所示的电路，通过引线14进行引线接合。而且，在散热器17的下表面上设置高导热绝缘片40。此外，在续流二极管13f的主面MS和散热器17的主面MS的每一个上，形成电极接合焊接部11f和电极接合焊接部11h。
参照图7，准备用于传递模塑法的下模具23和上模具24。上模具24具有：位于与电极接合焊接部11f、11h对应的位置上、并且穿通空腔的内面IS的多个贯通孔；插入该多个贯通孔的每一个的按压销(pin)22。按压销22向贯通孔的插入深度能够通过公知的调节器(actuator)(未图示)控制。通过该结构，上模具24以能够从内面IS使按压销22突起的方式构成。
加热下模具23和上模具24。以上模具24的内面IS和续流二极管13f的主面MS空开间隔而相向的方式，下模具23和上模具24夹住引脚框21。从上模具24的内面IS突起的多个按压销22的每一个，以图中箭头的方式向电极接合焊接部11f和电极接合焊接部11h按压。该按压的压力通过上述调节器控制。
参照图8，因为电极接合焊接部11f和电极接合焊接部11h具有延展性，所以通过对按压销22进行按压，在电极接合焊接部11f和电极接合焊接部11h的每一个上形成对应于按压销22的前端形状的凹陷。
以环氧树脂和填料为主成分的粉末或片料，通过加热和加压而熔融，成为粘度低的熔融体15m。该熔融体15m在被填充到空腔后固化。将下模具23和具有按压销的上模具24除去。
主要参照图9，形成了具有表面SF、开口部OPf及OPh的模塑树脂部15。
这样，在形成模塑树脂部15后，如图9的实线箭头所示那样，主电极管脚12hp和主电极管脚12fu、12fn(12fn在图9中未图示)的每一个被插入到开口部OPf和开口部OPh。由此，主电极管脚12fu、12fn(12fn在图9中未图示)和主电极管脚12hp的每一个配置在电极接合焊接部11f的凹陷和电极接合焊接部11h的凹陷之上。接着，主电极管脚12fu、12fn(12fn在图9中未图示)和主电极管脚12hp的每一个与电极接合焊接部11f和电极接合焊接部11h接合。作为接合方法，例如能够使用通过加热的方法、利用超声波的方法、压接法的任一种。
除了成为外部电极引脚16的部分以外的引脚框21通过切断而被除去。而且外部电极引脚16，如图9的虚线箭头所述的方式向表面SF一侧折弯。
通过上述而获得本实施方式的半导体装置。
参照图10，在比较例中，半导体装置具有外部主电极引脚46fu，以代替主电极管脚12f。外部主电极引脚46fu不是从模塑树脂部15的表面SF、而是从位于表面SF的周围的侧面向模塑树脂部15的外部突出。由于该突出，比较例的半导体装置与本实施方式的半导体装置相比，宽度尺寸(图中横方向的尺寸)增大了尺寸dW。
根据本实施方式，如图1所示，因为能够将主电极管脚12fu设置在续流二极管13f的主面MS上的区域，所以能够使半导体装置小型化。
此外，因为电极接合焊接部11f设置在续流二极管13f的主面MS上，所以在平面设计中除了续流二极管13f的区域以外不需要确保用于设置电极接合焊接部11f的区域。因此能够进一步使半导体装置小型化。
此外，电极接合焊接部11f具有延展性。因此，如图8所示，在被按压销22按压时，电极接合焊接部11f对应于该按压而变形，因此能够防止来自按压销22的力破坏续流二极管13f。再有，作为充分兼具延展性和导电性的材料，例如在焊料以外也能够使用导电性树脂。
此外，如图9所示，主电极管脚12fu配置在电极接合焊接部11f的凹陷后被接合。由此，能够更可靠地进行接合。
此外，如图1所示，主电极管脚12fu不经由引线14而与续流二极管13f连接，所以能够削减引线14的所需要的数量。
再有，在本实施方式中，在续流二极管13f的主面MS上设置主电极管脚12fu、12fn，但本发明并不被限定于此。主电极管脚例如也可以设置在IGBT13i的主面MS上。
此外，对一个半导体芯片使用一根(一处)主电极管脚，但对应于流到主电极的电流量，使用多根主电极管脚也可，关于其形状，代替棒状而是板状的也可。
此外，代替在半导体装置上设置主电极管脚12fu、12fn、12fp，也可以使用在该半导体装置连接的外部电路侧设置用于插入开口部OPf和OPh(图9)的每一个的电极的结构。
实施方式2
主要参照图11和图12，本实施方式的半导体装置，代替实施方式1的主电极管脚12fu、12fn、12fp的每一个，具有主电极部42fu、42fn、42hp。主电极部42fu、42fn的每一个具有：管脚部28f、和周围固定部26f。主电极部42hp具有：管脚部28h、和周围固定部26h。周围固定部26f和26h的每一个具有：螺丝孔27f和27h。螺丝孔27f和27h以露出表面SF的方式配置。
此外，周围固定部26f和26h的每一个具有螺母状的形状。由此，周围固定部26f和26h的每一个在模塑树脂部15内，在与螺丝孔27f和27h的延伸方向(图12中的纵方向)交叉的方向(图11的面内方向)上具有突起的角部CR。周围固定部26f和26h的每一个优选具有多处角部CR。例如，如图11所示，周围固定部26f和26h的每一个作为六角形状，具有六个角部CR。
再有，关于上述以外的结构，由于与实施方式1的结构大致相同，对同一或对应的要素赋予同一附图标记，不重复其说明。此外，关于制造方法，除了需要使实施方式1中的按压销22(上模具24)成为与本实施方式中的主电极部42fu、42fn、42hp的形状对应的按压销22以外，大致相同。
根据本实施方式，能够通过对周围固定部26f和26h的每一个的螺丝孔27f和27h的螺丝固定，进行半导体装置和与半导体装置连接的电路的连接。
此外，优选周围固定部26f和26h的每一个具有多处角部CR。由此，能够抑制螺丝固定时的周围固定部26f和26h的空转，并且能够避免这时力量集中而对模塑树脂造成损伤。
实施方式3
参照图13，本实施方式的半导体装置，在露出到表面SF的螺丝孔27f和27h的每一个的周围，具有固定到模塑树脂部15上的树脂部33。树脂部33能够通过涂覆液状树脂后固化而形成。此外，代替涂覆液状树脂，通过对具有与螺丝孔27f、27h对应的贯通孔的盖子(塞子)等进行粘接，也能够形成树脂部33。
再有，关于上述以外的结构，由于与实施方式2的结构大致相同，对同一或对应的要素赋予同一附图标记，不重复其说明。
根据本实施方式，通过树脂部33，在彼此相邻的主电极部42fu和42fn之间，或在彼此相邻的主电极部42fu和42hp之间，能够进一步确保充分的沿面放电距离。再有，沿面放电距离是指沿着在两个导电性部分之间的绝缘物的表面的最短距离。
此外，通过树脂部33，能够固定周围固定部26f和26h。
再有，在上述的实施方式1～3中，使用在续流二极管13f上经由电极接合焊接部11f设置电极的结构，但本发明并不被限定于此，例如也能够使用在IGBT13i上经由电极接合焊接部设置电极的结构。
对本发明详细地进行了说明和表示，但这只是为了举例表示，并不是限定，可以很明确地理解本发明的范围是通过本发明的技术方案所要求的范围来解释的。

Claims (6)

1.一种半导体装置，具备：具有主面的半导体芯片；
设置在所述主面上，并且由具有导电性和延展性的材料构成并且具有凹陷的导电部；
具有与所述主面正对的表面的密封树脂部；以及
设置在所述导电部的所述凹陷上，并且在所述导电部和所述表面之间贯通所述密封树脂部的电极。
2.根据权利要求1所述的半导体装置，所述导电部的材料包含从包括焊料和导电性树脂的组中选择的至少一种。
3.根据权利要求1所述的半导体装置，
所述电极包含：露出到所述表面上的螺丝孔；在所述密封树脂部内在与所述螺丝孔的延伸方向交叉的方向上突起的角部。
4.根据权利要求3所述的半导体装置，还具备：在所述螺丝孔的周围被固定在所述密封树脂部上的固定树脂部。
5.一种半导体装置的制造方法，具备：准备具有主面的半导体芯片的工序；
在所述主面上，形成由具有导电性和延展性的材料构成的导电部的工序；以及
在形成所述导电部的工序之后，在模具内配置所述半导体芯片的工序，
所述模具具有：相对于所述主面空出间隔而相向的内面；和以按压所述导电部的方式从所述内面突起的突起部，
通过所述突起部按压所述导电部，在所述导电部形成凹陷，
该方法还具备：通过在所述模具内填充树脂后除去所述模具，形成密封树脂部的工序，该密封树脂部具有：与所述主面正对的表面；和贯通所述导电部和所述表面之间的开口部。
6.根据权利要求5所述的半导体装置的制造方法，还具备：将贯通所述开口部的电极接合到所述导电部的所述凹陷上的工序。
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