CN101617390A - 切割/芯片接合薄膜 - Google Patents

切割/芯片接合薄膜 Download PDF

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CN101617390A
CN101617390A CN200880005676A CN200880005676A CN101617390A CN 101617390 A CN101617390 A CN 101617390A CN 200880005676 A CN200880005676 A CN 200880005676A CN 200880005676 A CN200880005676 A CN 200880005676A CN 101617390 A CN101617390 A CN 101617390A
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Prior art keywords
die bonding
bonding film
dicing
resin
chip join
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CN200880005676A
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CN101617390B (zh
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天野康弘
三隅贞仁
松村健
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Nitto Denko Corp
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Nitto Denko Corp
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Abstract

本发明提供切割工序时的胶粘性及拾取工序时的剥离性均控制良好的切割/芯片接合薄膜及其制造方法。本发明的切割/芯片接合薄膜，在基材上具有粘合剂层，并且在该粘合剂层上具有芯片接合层，其特征在于，所述芯片接合层中粘合剂层侧的算术平均粗糙度X(μm)为0.015μm～1μm，所述粘合剂层中芯片接合层侧的算术平均粗糙度Y(μm)为0.03μm～1μm，并且所述X与Y之差的绝对值为0.015以上。

Description

切割/芯片接合薄膜
技术领域
本发明涉及切割/芯片接合薄膜(dicing/die bonding film)及其制造方法，更具体而言，涉及半导体装置制造中使用的切割/芯片接合薄膜及其制造方法。
背景技术
为了应对半导体装置微细化、高功能化的要求，半导体芯片(半导体元件)主面的整个区域上设置的电源线的布线宽度和信号线间的间隔逐渐变窄。因此，产生阻抗的增加和异种节点的信号线间的信号干涉，在半导体芯片的工作速度、工作电压裕度、耐静电破坏强度等方面，成为阻碍发挥充分性能的因素。为了解决这些问题，提出了将半导体元件层压的封装结构(例如，参照下述专利文献1和专利文献2)。
另一方面，作为在衬底等上固定半导体元件时使用的材料，提出了使用热固性树脂浆的例子(例如，参照下述专利文献3)、和使用将热塑性树脂和热固性树脂组合使用的胶粘片的例子(例如，参照下述专利文献4和专利文献5)。
另外，以往的半导体装置制造方法中，在将半导体元件与衬底、引线框或半导体元件粘合时，使用胶粘片或胶粘剂。粘合是在将半导体元件与衬底等压接后(芯片粘接)，通过加热工序使胶粘片等固化而进行。
在此，压接于衬底等上的半导体元件，为了与该衬底等电连接而进行丝焊工序。然后，用密封树脂将半导体元件等塑封，后固化后进行该密封树脂的密封(例如，参照下述专利文献4和专利文献5)。进行所述丝焊时，衬底等上的半导体元件由于超声波振动或加热而移动。
因此，目前，需要在丝焊前进行加热工序，使热固性树脂浆或热固性胶粘片加热固化，固定半导体元件使其不移动。
另外，对于由热塑性树脂构成的胶粘片或组合使用热固性树脂和热塑性树脂的胶粘片，为了确保与被粘物的粘合力及提高润湿性，在芯片粘接后、丝焊前需要进行加热工序。
专利文献1：日本特开昭55-111151号公报
专利文献2：日本特开2002-261233号公报
专利文献3：日本特开2002-179769号公报
专利文献4：日本特开2000-104040号公报
专利文献5：日本特开2002-261233号公报
发明内容
但是，随着半导体晶片的大型化和薄型化，以往的切割/芯片接合薄膜难以同时满足切割时需要的高胶粘性和拾取时需要的剥离性，因而难以从切割带上剥离带胶粘剂的半导体芯片。结果，存在拾取不良或由芯片变形导致破损的问题。
另外，依据切割/芯片接合薄膜的种类，有时具有紫外线固化型切割带。该紫外线固化型切割带的情况下，有时与粘合剂层中未固化的树脂反应而使粘合力随时间的推移而增大。此时，难以从切割带上拾取带胶粘剂的半导体芯片，无法剥离除去而废弃。结果，生产成本增大，导致成品率下降。
本发明鉴于以上问题而进行，其目的在于提供切割工序时的胶粘性和拾取工序时的剥离性均控制良好的切割/芯片接合薄膜及其制造方法。
为了解决上述现有问题，本发明人对切割/芯片接合薄膜及其制造方法进行了研究，结果发现，通过控制粘合剂层与芯片接合层之间的胶粘面积，能够使切割工序时的胶粘性和拾取工序时的剥离性均良好，并且完成了本发明。
即，本发明的切割/芯片接合薄膜，在基材上具有粘合剂层，并且在该粘合剂层上具有芯片接合层，其特征在于，所述芯片接合层中粘合剂层侧的算术平均粗糙度X(μm)为0.015μm～1μm，所述粘合剂层中芯片接合层侧的算术平均粗糙度Y(μm)为0.03μm～1μm，并且所述X与Y之差的绝对值为0.015以上。
通过所述结构，使粘合剂层与芯片接合层的胶粘面不是完全密合，而是形成两者胶粘的区域和两者不胶粘的区域。结果，防止胶粘面积过小、粘合剂层与芯片接合层之间的胶粘性下降。另一方面，也防止胶粘面积过大、粘合剂层与芯片接合层的剥离性下降。由此，例如在将半导体晶片胶粘到芯片接合层上、并对其进行切割而形成半导体芯片时，粘合剂层与芯片接合层之间的胶粘性也充分，因此能够防止所谓的芯片飞离的发生。另外，在拾取通过切割形成的带芯片接合层的半导体芯片时，也确保粘合剂层与芯片接合层之间的剥离性，因此能够容易地将该带芯片接合层的半导体芯片从粘合剂层上剥离。
所述芯片接合层中粘合剂层侧的算术平均粗糙度X(μm)优选大于所述粘合剂层中芯片接合层侧的算术平均粗糙度Y(μm)。通过使芯片接合层中粘合剂层侧的算术平均粗糙度大于粘合剂层的算术平均粗糙度，能够在保持粘合剂层对芯片接合层的胶粘力的状态下，使该芯片接合层对粘合剂层的胶粘力下降。由此，能够使切割工序时的胶粘性和拾取工序时的剥离性两者均良好。
所述芯片接合层优选含有橡胶成分、环氧树脂成分及无机填充材料。
所述无机填充材料的含量相对于有机树脂组合物100重量份优选在20～80重量份的范围内。另外，所述无机填充材料的平均粒径优选在0.1～5μm的范围内。通过使无机填充材料的含量和平均粒径分别在所述数值范围内，能够使芯片接合层表面的算术平均粗糙度在0.015μm～1μm的范围内。
所述芯片接合层优选含有热塑性树脂。
所述芯片接合层优选含有热固性树脂及热塑性树脂。
所述热塑性树脂优选为丙烯酸树脂。丙烯酸树脂中离子性杂质少且耐热性高，因此能够确保半导体元件的可靠性。
所述热固性树脂优选为环氧树脂或酚树脂中的任何一种。这些树脂中离子性杂质少且耐热性高，因此能够确保半导体元件的可靠性。
所述芯片接合层中优选添加交联剂。
发明效果
本发明通过前述手段发挥下述效果。
即，根据本发明，使芯片接合层中粘合剂层侧的算术平均粗糙度X(μm)为0.015～1μm、使粘合剂层中芯片接合层侧的算术平均粗糙度Y(μm)为0.01～1μm，并且使所述X与Y之差的绝对值为0.015以上，因此，使粘合剂层与芯片接合层的胶粘面不完全密合而形成两者胶粘的区域和两者不胶粘的区域。结果，使切割工序时的胶粘性和拾取工序时的剥离性两者均良好，使生产成本下降，同时使成品率提高，从而能够制造半导体装置。
附图说明
图1是显示本发明的一个实施方式的切割/芯片接合薄膜的断面示意图。
图2是显示所述实施方式的其它切割/芯片接合薄膜的断面示意图。
图3是显示通过所述切割/芯片接合薄膜中的芯片接合薄膜安装半导体芯片的例子的断面示意图。
图4是显示通过所述切割/芯片接合薄膜中的芯片接合薄膜对半导体芯片进行三维安装的例子的断面示意图。
图5是显示使用所述切割/芯片接合薄膜，利用芯片接合薄膜隔着垫片对两个半导体芯片进行三维安装的例子的断面示意图。
标记说明
1        基材
2        粘合剂层
2a       部分
2b       部分
3，3’   芯片接合薄膜
3a       部分
3b       部分
10，12   切割/芯片接合薄膜
11       切割薄膜(粘合薄膜)
具体实施方式
以下参照附图对本发明的实施方式进行说明。其中，省略了不需说明的部分，另外为了易于说明，有放大或缩小而进行图示的部分。
如图1所示，切割/芯片接合薄膜10为在基材1上依次层压粘合剂层2和芯片接合层3的结构。另外，如图2所示，也可以是仅在工件粘贴部分形成芯片接合层3’的结构。
芯片接合层3、3’中粘合剂层2侧的算术平均粗糙度X(μm)在0.015μm～1μm范围内，优选为0.05μm～1μm、更优选为0.1μm～1μm、特别优选为0.2μm～1μm。另外，粘合剂层2中芯片接合层3、3’侧的算术平均粗糙度Y(μm)在0.03μm～1μm范围内，优选为0.03μm～0.5μm、更优选为0.03μm～0.1μm、特别优选为0.03μm～0.05μm。芯片接合层3、3’的算术平均粗糙度X小于0.015μm、或粘合剂层2的算术平均粗糙度Y小于0.03μm时，粘合剂层2与芯片接合层3、3’的接触面积过大，密合性提高。结果，在后述的拾取工序时，难以从粘合剂层2上剥离芯片接合层3、3’。另一方面，芯片接合层3、3’的算术平均粗糙度X或粘合剂层2的算术平均粗糙度Y超过1μm时，粘合剂层2与芯片接合层3、3’的接触面积过小，密合性降低。结果，在后述的拾取工序时，固定在芯片接合层3、3’上的半导体芯片与该芯片接合层3、3’一起从粘合剂层2上剥离，发生所谓的芯片飞离。另外，在将带芯片接合层3、3’的半导体芯片芯片接合到被粘物上时，该芯片接合层3、3’与被粘物之间产生空隙，如果在残留该空隙的状态下制造半导体装置则有时其可靠性下降。
另外，芯片接合层3、3’中粘合剂层2侧的算术平均粗糙度X(μm)与所述粘合剂层2中芯片接合层3、3’侧的算术平均粗糙度Y(μm)之差的绝对值为0.015以上，优选为0.025以上，更优选为0.03～0.12。所述X与Y之差的绝对值如果小于0.015，则粘合剂层2与芯片接合层3、3’的胶粘面过度密合，结果，在后述的拾取工序时，难以从粘合剂层2上剥离芯片接合层3、3’。
芯片接合层3、3’的算术平均粗糙度X(μm)优选大于粘合剂层2的算术平均粗糙度Y(μm)。此时的大小关系在所述X与Y之差的绝对值为0.015以上的范围内来满足。
将粘合剂层2或芯片接合层3、3’的表面算术平均粗糙度调节到所述数值范围内的方法没有特别限制。例如，可以列举能够进行表面粗糙化处理的涂布法。作为该涂布方法的代表例，可以列举例如：使用刮刀涂布法、模池刮刀(fountain)法、凹版法等将混合了规定量无机填充材料的胶粘剂组合物涂布到粘合剂层2上的方法。
芯片接合层3、3’中粘合剂层2侧的表面和粘合剂层2中芯片接合层3、3’侧的表面的平均粗糙度，通过适当设定所述涂布方法的涂布条件、涂布后的干燥条件能够进行控制。具体而言，例如，通过对涂布时的涂布速度、涂布膜的膜厚、干燥时的干燥风的风量、干燥温度进行各种设定，能够使涂布液中溶剂的蒸发方式和涂布膜中的对流发生变化，从而控制达到所述范围内的算术平均粗糙度。
另外，所述算术平均粗糙度是由JIS表面粗糙度(B0601)定义的算术平均粗糙度。作为算术平均粗糙度的测定方法，可以列举例如：使用VEECO公司制造的非接触三维表面形状测定装置NT8000、ZYGO公司制造的New View 5032、岛津制作所制造的原子力显微镜SPM-9500型等的方法。
以下，对构成本实施方式的切割/芯片接合薄膜10的各结构构件进行详细说明。
所述基材1具有紫外线透射性，并且作为切割/芯片接合薄膜10、12的强度母体。可以列举例如：低密度聚乙烯、线性聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、无规共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯、聚丁烯、聚甲基戊烯等聚烯烃、乙烯-醋酸乙烯酯共聚物、离聚物树脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等聚酯、聚碳酸酯、聚酰亚胺、聚醚醚酮、聚酰亚胺、聚醚酰亚胺、聚酰胺、全芳香族聚酰胺、聚苯硫醚、芳族聚酰胺(纸)、玻璃、玻璃布、氟树脂、聚氯乙烯、聚偏氯乙烯、纤维素类树脂、硅氧烷(silicone)树脂、金属(箔)、纸等。
另外，作为基材1的材料，可以列举上述树脂的交联物等聚合物。所述塑料薄膜可以不拉伸而使用，根据需要也可以进行单轴或双轴拉伸处理后使用。利用经拉伸处理等而赋予了热收缩性的树脂片时，通过在切割后使它的基材1热收缩，能够降低粘合剂层2与芯片接合层3、3’的胶粘面积，从而使半导体芯片的回收变得容易。
为了提高与邻接层的密合性和保持性等，基材1的表面可以进行常规的表面处理，例如铬酸处理、臭氧暴露、火焰暴露、高压电击暴露、离子化射线处理等化学或物理处理、利用底涂剂(例如，后述的粘合物质)的涂布处理等。
所述基材1，可以适当选择使用同种或异种材料，根据需要也可以将多种混合使用。另外，为了对基材1赋予防静电性能，可以在所述基材1上设置含有金属、合金、它们的氧化物等的厚度约30～约500
Figure G2008800056762D00082
的导电物质的蒸镀层。基材1可以是单层或2种以上的多层。
基材1的厚度没有特别限制，可以适当设定，一般为约5μm～约200μm。
所述粘合剂层2例如含有紫外线固化型粘合剂。紫外线固化型粘合剂可以通过紫外线照射使交联度增大从而容易地使其粘合力降低，通过仅对与图2所示的粘合剂层2的半导体晶片粘贴部分相对应的部分2a进行紫外线照射，能够设定与其余部分2b的粘合力差。
另外，通过使紫外线固化型粘合剂层2与图2所示的芯片接合层3’贴在一起而固化，能够容易地形成粘合力显著下降的所述部分2a。由于芯片接合层3’粘贴在固化且粘合力下降的所述部分2a上，因此粘合剂层2的所述部分2a与芯片接合层3’的界面具有在拾取时容易剥离的性质。另一方面，未照射紫外线的部分具有充分的粘合力，形成所述部分2b。
如前所述，图1所示的切割/芯片接合薄膜10的粘合剂层2中，由未固化的紫外线固化型粘合剂形成的所述部分2b与芯片接合层3粘合，能够确保切割时的保持力。这样，紫外线固化型粘合剂能够以良好的胶粘、剥离平衡支撑用于将半导体芯片固定到衬底等被粘物上的芯片接合层3。图2所示的切割/芯片接合薄膜11的粘合剂层2中，所述部分2b能够固定贴片环(wafer ring)。
所述紫外线固化型粘合剂可以没有特别限制地使用具有碳碳双键等紫外线固化型官能团并且显示出粘合性的粘合剂。作为紫外线固化型粘合剂，可以列举例如在丙烯酸类粘合剂、橡胶类粘合剂等普通的压敏粘合剂中混合紫外线固化型单体成分或低聚物成分而成的添加型紫外线固化型粘合剂。
作为所述压敏粘合剂，从半导体晶片或玻璃等避免污染的电子部件的超纯水或醇等有机溶剂的清洗性能等观点考虑，优选以丙烯酸类聚合物作为基础聚合物的丙烯酸类粘合剂。
作为所述丙烯酸类聚合物，可以列举例如：使用(甲基)丙烯酸烷基酯(例如，甲酯、乙酯、丙酯、异丙酯、丁酯、异丁酯、仲丁酯、叔丁酯、戊酯、异戊酯、己酯、庚酯、辛酯、2-乙基己酯、异辛酯、壬酯、癸酯、异癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等烷基的碳原子数1～30、特别是碳原子数4～18的直链或支链烷基酯等)及(甲基)丙烯酸环烷基酯(例如，环戊酯、环己酯等)中的一种或两种以上作为单体成分的丙烯酸类聚合物等。另外，(甲基)丙烯酸酯是指丙烯酸酯和/或甲基丙烯酸酯，本发明的(甲基)全部为同样的含义。
为了改善凝集力和耐热性等，根据需要，所述丙烯酸类聚合物可以含有与能够与所述(甲基)丙烯酸烷基酯或环烷基酯共聚的其它单体成分对应的单元。作为这样的单体成分，可以列举例如：丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸羧戊酯、衣康酸、马来酸、富马酸、巴豆酸等含羧基单体；马来酸酐、衣康酸酐等酸酐单体；(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯、(甲基)丙烯酸-(4-羟甲基环己基)甲酯等含羟基单体；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯酰氧基萘磺酸等含磺酸基单体；丙烯酰磷酸-2-羟乙酯等含磷酸基单体；丙烯酰胺；丙烯腈等。这些可共聚单体成分可以使用一种或两种以上。这些可共聚单体的用量优选为单体成分总量的40重量％以下。
另外，为了使其发生交联，根据需要，所述丙烯酸类聚合物也可以含有多官能单体等作为共聚单体成分。作为这样的多官能单体，可以列举例如：己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、环氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、氨基甲酸酯(甲基)丙烯酸酯等。这些多官能单体可以使用一种或两种以上。从粘合特性等观点考虑，多官能单体的用量优选为单体成分总量的30重量％以下。
所述丙烯酸类聚合物通过将单一单体或两种以上单体的混合物进行聚合而得到。聚合可以通过溶液聚合、乳液聚合、本体聚合、悬浮聚合等任意方式进行。从防止污染清洁的被粘物等观点考虑，优选低分子量物质的含量小。考虑这一点，丙烯酸类聚合物的数均分子量优选为30万以上、更优选为约40万～约300万。
另外，为了提高作为基础聚合物的丙烯酸类聚合物等的数均分子量，所述粘合剂中也可以适当采用外部交联剂。作为外部交联方法的具体手段，可以列举添加多异氰酸酯化合物、环氧化合物、氮丙啶化合物、三聚氰胺类交联剂等所谓的交联剂而进行反应的方法。使用外部交联剂时，其用量根据与要交联的基础聚合物的平衡、以及作为粘合剂的使用用途适当确定。一般而言，相对于所述基础聚合物100重量份，优选配合约5重量份以下、更优选配合0.1～5重量份。另外，根据需要，粘合剂中除前述成分以外也可以使用现有公知的各种粘合性赋予剂、抗老化剂等添加剂。
作为混合的所述紫外线固化性单体成分，可以列举例如：氨基甲酸酯低聚物、氨基甲酸酯(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、四羟甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇单羟基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1，4-丁二醇二(甲基)丙烯酸酯等。另外，紫外线固化性低聚物成分可以列举氨基甲酸酯类、聚醚类、聚酯类、聚碳酸酯类、聚丁二烯类等各种低聚物，其分子量优选在约100～约30000的范围内。紫外线固化性单体成分或低聚物成分的配合量可以根据所述粘合剂层的种类，适当确定使粘合剂层的粘合力下降的量。一般而言，相对于100重量份构成粘合剂的丙烯酸类聚合物等基础聚合物，例如为约5重量份～约500重量份、优选为约40重量份～约150重量份。
另外，作为紫外线固化型粘合剂，除前面说明的添加型紫外线固化型粘合剂以外，还可以列举：使用在聚合物侧链或主链中或主链末端具有碳碳双键的聚合物作为基础聚合物的内在型紫外线固化型粘合剂。内在型紫外线固化型粘合剂不需要含有或者多数不含有作为低分子量成分的低聚物成分，因此低聚物成分等不会随时间推移在粘合剂中移动，能够形成层结构稳定的粘合剂层，因此优选。
所述具有碳碳双键的基础聚合物，可以没有特别限制地使用具有碳碳双键并且具有粘合性的聚合物。作为这样的基础聚合物，优选以丙烯酸类聚合物为基本骨架的聚合物。作为丙烯酸类聚合物的基本骨架，可以列举前面例示的丙烯酸类聚合物。
在所述丙烯酸类聚合物中引入碳碳双键的方法没有特别限制，可以采用各种方法，但在聚合物侧链中引入碳碳双键的分子设计比较容易。例如，可以列举下述方法：预先使具有官能团的单体与丙烯酸类聚合物共聚后，使具有能够与该官能团反应的官能团及碳碳双键的化合物在保持碳碳双键的紫外线固化性的状态下进行缩合或加成反应。
作为这些官能团的组合例，可以列举羧酸基与环氧基、羧酸基与氮丙啶基、羟基与异氰酸酯基等。这些官能团的组合中，从跟踪反应的容易度考虑，优选羟基与异氰酸酯基的组合。另外，根据这些官能团组合的不同，如果是生成所述具有碳碳双键的丙烯酸类聚合物这样的组合，则官能团可以在丙烯酸类聚合物和所述化合物的任何一者上，而在所述优选组合的情况下，优选丙烯酸类聚合物具有羟基、所述化合物具有异氰酸酯基。此时，作为具有碳碳双键的异氰酸酯化合物，可以列举例如：甲基丙烯酰异氰酸酯、2-甲基丙烯酰氧乙基异氰酸酯、间异丙烯基-α，α-二甲基苄基异氰酸酯等。另外，作为丙烯酸类聚合物，可以使用前面列举的含羟基单体或2-羟乙基乙烯基醚、4-羟丁基乙烯基醚、二乙二醇单乙烯基醚这些醚类化合物等共聚而成的聚合物。
所述内在型紫外线固化型粘合剂可以单独使用所述具有碳碳双键的基础聚合物(特别是丙烯酸类聚合物)，也可以在不使特性变差的程度内混合所述紫外线固化性单体成分或低聚物成分。紫外线固化性低聚物成分等相对于100重量份基础聚合物通常在30重量份的范围内，优选在0～10重量份的范围内。
所述紫外线固化型粘合剂中，在通过紫外线等进行固化时含有光聚合引发剂。作为光聚合引发剂，可以列举例如：4-(2-羟基乙氧基)苯基(2-羟基-2-丙基)酮、α-羟基-α，α’-二甲基苯乙酮、2-甲基-2-羟基苯丙酮、1-羟基环己基苯基酮等α-酮醇类化合物；甲氧基苯乙酮、2，2’-二甲氧基-2-苯基苯乙酮、2，2’-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)苯基]-2-吗啉代丙烷-1等苯乙酮类化合物；苯偶姻乙醚、苯偶姻异丙醚、茴香偶姻甲醚等苯偶姻醚类化合物；苯偶酰二甲基缩酮等缩酮类化合物；2-萘磺酰氯等芳香族磺酰氯类化合物；1-苯酮-1，1-丙二酮-2-(o-乙氧基羰基)肟等光活性肟类化合物；二苯甲酮、苯甲酰基苯甲酸、3，3’-二甲基-4-甲氧基二苯甲酮等二苯甲酮类化合物；噻吨酮、2-氯噻吨酮、2-甲基噻吨酮、2，4-二甲基噻吨酮、异丙基噻吨酮、2，4-二氯噻吨酮、2，4-二乙基噻吨酮、2，4-二异丙基噻吨酮等噻吨酮类化合物；樟脑醌；卤化酮；酰基氧化膦；酰基膦酸酯等。光聚合引发剂的配合量相对于100重量份构成粘合剂的丙烯酸类聚合物等基础聚合物例如为约0.05重量份～约20重量份。
另外，作为紫外线固化型粘合剂，可以列举例如日本特开昭60-196956号公报中公开的包含具有两个以上不饱和键的可加聚化合物、具有环氧基的烷氧基硅烷等可光聚合化合物和羰基化合物、有机硫化合物、过氧化物、胺、鎓盐类化合物等光聚合引发剂的橡胶类粘合剂或丙烯酸类粘合剂等。
所述粘合剂层2对芯片接合层3、3’的粘合力优选为0.04～0.2N/10mm宽度，更优选为0.06～0.1N/10mm宽度(90度剥离的剥离力、剥离速度300mm/mm)。如果在上述数值范围内，则在拾取带芯片接合薄膜的粘合剂的半导体芯片时，该半导体芯片不会超出需要地固定而实现更良好的拾取性。
作为在所述粘合剂层2中形成所述部分2a的方法，可以列举在基材1上形成紫外线固化型粘合剂层2后对所述部分2a部分地照射紫外线而使其固化的方法。部分紫外线照射可以通过形成与半导体晶片粘贴部分3a以外的部分3b等对应的图案的光掩模来进行。另外，可以列举点式照射紫外线进行固化的方法等。紫外线固化型粘合剂层2的形成可以通过将设置在隔膜(separator)上的紫外线固化型粘合剂层转印到基材1上来进行。部分紫外线固化也可以在隔膜上设置的紫外线固化型粘合剂层2中进行。
切割/芯片接合薄膜10的粘合剂层2中，也可以对粘合剂层2的一部分进行紫外线照射，以使所述部分2a的粘合力＜其它部分2b的粘合力。即，可以使用对基材1的至少单面的、与半导体晶片粘贴部分3a对应的部分以外的部分的全部或一部分进行遮光的基材1，在其上形成紫外线固化型粘合剂层2后进行紫外线照射，使与半导体晶片粘贴部分3a对应的部分固化，从而形成粘合力降低的前述部分2a。作为遮光材料，可以通过在支撑薄膜上印刷或蒸镀能够形成光掩模的材料等来制作。由此，能够高效制造本发明的切割/芯片接合薄膜10。
粘合剂层2的厚度没有特别限制，从同时防止芯片切割面缺陷和保持胶粘层固定的观点考虑，优选为约1μm～约50μm。优选为2～30μm、更优选为5～25μm。
所述胶粘剂层是具有胶粘功能的层，作为其构成材料，可以列举组合使用热塑性树脂和热固性树脂的材料。另外，也可以单独使用热塑性树脂。
芯片接合层3、3’的层压结构没有特别限制，可以列举例如：仅由单层胶粘剂层构成的结构、或在芯材的单面或双面上形成胶粘剂层的多层结构。作为所述芯材，可以列举：薄膜(例如，聚酰亚胺薄膜、聚酯薄膜、聚对苯二甲酸乙二醇酯薄膜、聚萘二甲酸乙二醇酯薄膜、聚碳酸酯薄膜等)、用玻璃纤维或塑料无纺纤维增强的树脂衬底、硅衬底或玻璃衬底等。
作为所述热塑性树脂，可以列举：天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁二烯橡胶、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、尼龙-6或尼龙-6，6等聚酰胺树脂、苯氧基树脂、丙烯酸树脂、PET或PBT等饱和聚酯树脂、聚酰胺酰亚胺树脂、或氟树脂等。这些热塑性树脂可以单独使用或者两种以上组合使用。这些热塑性树脂中，特别优选离子性杂质少、耐热性高、能够确保半导体元件可靠性的丙烯酸树脂。
作为所述丙烯酸树脂，没有特别限制，可以列举以一种或两种以上具有碳原子数30以下、特别是碳原子数4～18的直链或支链烷基的丙烯酸或甲基丙烯酸的酯作为成分的聚合物等。作为所述烷基，可以列举例如：甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、环己基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基或十二烷基等。
另外，作为形成所述聚合物的其它单体，没有特别限制，可以列举例如：丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸或巴豆酸等含羧基单体；马来酸酐或衣康酸酐等酸酐单体；(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯或丙烯酸-(4-羟甲基环己基)甲酯等含羟基单体；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯酰氧基萘磺酸等含磺酸基单体；或丙烯酰磷酸2-羟乙酯等含磷酸基单体。
作为所述热固性树脂，可以列举酚树脂、氨基树脂、不饱和聚酯树脂、环氧树脂、聚氨酯树脂、硅氧烷树脂或热固性聚酰亚胺树脂等。这些树脂可以单独使用或者两种以上组合使用。特别优选腐蚀半导体元件的离子性杂质等含量少的环氧树脂。另外，作为环氧树脂的固化剂优选酚树脂。
所述环氧树脂只要是通常作为胶粘剂组合物使用的环氧树脂则没有特别限制，可以列举例如：双酚A型、双酚F型、双酚S型、溴化双酚A型、氢化双酚A型、双酚AF型、联苯型、萘型、芴型、酚醛清漆型、邻甲酚酚醛清漆型、三羟苯基甲烷型、四酚基乙烷型等双官能环氧树脂或多官能环氧树脂、或者乙内酰脲型、异氰脲酸三缩水甘油酯型或缩水甘油基胺型环氧树脂。这些环氧树脂可以单独使用或者2种以上组合使用。这些环氧树脂中特别优选酚醛清漆型环氧树脂、联苯型环氧树脂、三羟苯基甲烷型树脂或四酚基乙烷型环氧树脂。这是因为这些环氧树脂与作为固化剂的酚树脂的反应性高、并且耐热性等优良。
另外，所述酚树脂作为所述环氧树脂的固化剂起作用，可以列举例如：苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂、壬基苯酚酚醛清漆树脂等酚醛清漆型酚树脂、甲阶酚醛树脂(resol)型酚树脂、聚对羟基苯乙烯等聚羟基苯乙烯等。这些酚树脂可以单独使用或者两种以上组合使用。这些酚树脂中特别优选苯酚酚醛清漆树脂、苯酚芳烷基树脂。这是因为它们能够提高半导体装置的连接可靠性。
所述环氧树脂与酚树脂的配比，优选例如以相对于所述环氧树脂成分中每1当量环氧基，酚树脂中的羟基为0.5～2.0当量的比例进行配合。更优选为0.8～1.2当量。即，两者的配比偏离上述范围时，无法进行充分的固化反应，环氧树脂固化物的特性容易变差。
另外，本发明中，特别优选使用了环氧树脂、酚树脂及丙烯酸树脂的芯片接合薄膜。这些树脂中离子性杂质少并且耐热性高，因此能够确保半导体元件的可靠性。此时的配比是：相对于100重量份丙烯酸树脂成分，环氧树脂与酚树脂的混合量为10～200重量份。
在使本发明的芯片接合层3、3’预先进行某种程度的交联时，优选在制作时添加能够与聚合物分子链末端的官能团等反应的多官能化合物作为交联剂。由此，能够提高高温下的胶粘特性，并改善耐热性。
作为所述交联剂，可以采用现有公知的交联剂。特别是更优选甲苯二异氰酸酯、二苯基甲烷二异氰酸酯、对苯二异氰酸酯、1，5-萘二异氰酸酯、多元醇与二异氰酸酯的加成物等多异氰酸酯化合物。交联剂的添加量相对于所述聚合物100重量份通常优选为0.05～7重量份。交联剂的量多于7重量份时胶粘力下降，因此不优选。另一方面，少于0.05重量份时凝集力不足因此不优选。另外，根据需要，也可以与这种多异氰酸酯化合物一起含有环氧树脂等其它多官能化合物。
另外，芯片接合层3、3’中可以适当混合无机填充材料。无机填充材料的混合能够对芯片接合层3、3’的表面赋予凹凸。另外，也能够赋予导电性、提高导热性、调节储存弹性模量等。
作为所述无机填充材料，可以列举例如：二氧化硅、粘土、石膏、碳酸钙、硫酸钡、氧化铝、氧化铍、碳化硅、氮化硅等陶瓷类、铝、铜、银、金、镍、铬、铅、锡、锌、钯、焊锡等金属或合金类、以及含碳的各种无机粉末。这些材料可以单独使用或者两种以上组合使用。其中，特别优选使用熔融二氧化硅。
无机填充材料的平均粒径优选在0.1～5μm的范围内、更优选在0.2～3μm的范围内。平均粒径小于0.1μm时，难以使芯片接合层3、3’表面的算术平均粗糙度为0.015μm以上。另一方面，平均粒径超过5μm时，难以使芯片接合层3、3’表面的算术平均粗糙度小于1μm。
所述无机填充材料的混合量，相对于有机树脂成分100重量份优选设定为20～80重量％。特别优选为20～70重量％。无机填充材料的混合量低于20重量％时，耐热性下降，因此当暴露于长时间高温的热历史时，有时芯片接合层3、3’固化，造成流动性或埋入性降低。另外，超过80重量％时，芯片接合层3、3’的储存弹性模量增大。因此，有时固化的胶粘剂难以应力缓和，在密封工序中对凹凸的埋入性降低。
另外，除上述无机填充材料以外，根据需要芯片接合层3、3’中也可以适当混合其它添加剂。作为其它添加剂，可以列举例如：阻燃剂、硅烷偶联剂或离子捕集剂等。
作为所述阻燃剂，可以列举例如：三氧化锑、五氧化锑、溴化环氧树脂等。这些阻燃剂可以单独使用或者两种以上组合使用。
作为所述硅烷偶联剂，可以列举例如：β-(3，4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等。这些化合物可以单独使用或者两种以上组合使用。
作为所述离子捕集剂，可以列举例如：水滑石类、氢氧化铋等。这些物质可以单独使用或者两种以上组合使用。
芯片接合层3、3’的厚度(层压体的情况下指总厚度)没有特别限制，例如，为约5μm～约100μm，优选为约5μm～约50μm。
所述切割/芯片接合薄膜10、12的芯片接合层3、3’优选由隔膜进行保护(未图示)。隔膜具有作为在供给实用之前保护芯片接合层3、3’的保护材料的功能。另外，隔膜还能够作为在粘合剂层2上转印芯片接合层3、3’时的支撑基材使用。隔膜在向切割/芯片接合薄膜的芯片接合层3、3’上粘贴工件时剥离。作为隔膜，可以使用聚对苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、或利用氟剥离剂、长链烷基丙烯酸酯类剥离剂等剥离剂进行了表面涂覆的塑料薄膜或纸等。
芯片接合层3、3’，从其胶粘性能方面考虑，优选至少在垂直于平面方向的方向上具有某种程度的弹性。另一方面，芯片接合层3、3’整体过度具有弹性时，丝焊时即使想连接焊线，也会因芯片接合层3、3’的弹力而阻碍对贴合芯片接合层3、3’的引线框进行充分的固定。结果，使加压引起的压接能缓和，产生接合不良。所述丝焊工序在约150℃～约200℃的高温条件下进行。因此，芯片接合层3、3’固化前在120℃下的拉伸储存弹性模量优选为1×104Pa以上、更优选为0.1～20Pa。所述拉伸储存弹性模量低于1×104Pa时，切割时熔融的芯片接合3、3’有时固着在例如半导体芯片上，造成拾取困难。另外，芯片接合层3、3’固化后在200℃下的拉伸储存弹性模量优选为50MPa以下，更优选为0.5MPa～40MPa。超过50MPa时，有时在丝焊后的塑封时对芯片接合层3、3’的凹凸面的埋入性降低。另外，通过设定为0.5MPa以上，能够在以无引线结构为特征的半导体装置中进行稳定的接线。拉伸储存弹性模量通过适当调节层状硅酸盐或无机填充材料的添加量能够进行调节。
作为拉伸储存弹性模量的测定方法，是在进行脱模处理后的剥离衬里上以厚度为100μm的方式涂布而仅得到芯片接合层3、3’。将该芯片接合层3、3’于150℃下在烘箱中放置1小时，然后使用粘弹性测定装置(レオメトリツクス公司制，型号RSA-II型)，测定200℃下芯片接合层3、3’的拉伸储存弹性模量。更具体而言，设定试样尺寸为长度30.0mm×宽5.0mm×厚度0.1mm，将测定试样安装到膜拉伸测定用夹具上，在50℃～250℃的温度范围内、在频率1.0Hz、应变0.025％、升温速度10℃/分钟的条件下进行。
(半导体装置的制造方法)
本发明的切割/芯片接合薄膜10、12，在将芯片接合层3、3’上任选设置的隔膜适当剥离后按如下方式使用。以下，参照附图对使用切割/芯片接合薄膜10的例子进行说明。
首先，如图1所示，将半导体晶片4压接在切割/芯片接合薄膜10中芯片接合层3的半导体晶片粘贴部分3a上，并使其保持胶粘而固定(装配工序)。本工序使用压接辊等挤压工具挤压来进行。
然后，进行半导体晶片4的切割。由此，将半导体晶片4切割为规定的尺寸而小片化，制造半导体芯片5。切割是按照常规方法例如从半导体晶片4的电路面一侧来进行。另外，本工序中，可以采用例如切入至切割/芯片接合薄膜10的、称为全切的切割方式等。本工序中使用的切割装置没有特别限制，可以使用现有公知的切割装置。另外，由于半导体晶片由切割/芯片接合薄膜10胶粘固定，因此能够抑制芯片缺陷和芯片飞离，并且也能够抑制半导体晶片4的破损。
为了剥离由切割/芯片接合薄膜10胶粘固定的半导体晶片，进行半导体芯片5的拾取。拾取方法没有特别限制，可以采用现有公知的各种方法。例如，可以列举用针从切割/芯片接合薄膜10一侧将各个半导体芯片5向上推，通过拾取装置拾取被上推的半导体芯片5的方法等。
在此，由于粘合剂层2为紫外线固化型，因此在对该粘合剂层2照射紫外线后进行拾取。由此，粘合剂层2对芯片接合层3a的粘合力下降，能够容易地剥离半导体芯片5。结果，能够不损伤半导体芯片而进行拾取。紫外线照射时的照射强度、照射时间等条件没有特别限制，根据需要适当设定即可。另外，紫外线照射使用的光源可以使用前述的光源。
拾取的半导体芯片5通过芯片接合层3a胶粘固定到被粘物6上(芯片接合)。作为被粘物6，可以列举引线框、TAB薄膜、衬底或另外制作的半导体芯片等。被粘物6例如可以是容易变形的变形型被粘物、也可以是难以变形的非变形型被粘物(半导体晶片等)。
作为所述衬底，可以使用现有公知的衬底。另外，作为所述引线框，可以使用Cu引线框、42合金引线框等金属引线框或由玻璃环氧、BT(双马来酰亚胺-三嗪)、聚酰亚胺等制成的有机衬底。但是，本发明不限于这些，还包括在装配半导体元件，与半导体元件电连接后能够使用的电路衬底。
芯片接合层3为热固型时，通过加热固化使半导体芯片5胶粘固定在被粘物6上，提高耐热强度。另外，通过半导体晶片粘贴部分3a使半导体芯片5胶粘固定在衬底等上而得到的制品可以供给回流焊接工序。
另外，所述芯片接合也可以不使芯片接合层3固化而仅仅暂时固着在被粘物上。之后，不经加热工序而进行丝焊，进而用密封树脂将半导体芯片密封，也可以对该密封树脂进行后固化。
此时，作为芯片接合层3，使用暂时固着时对被粘物6的剪切胶粘力为0.2MPa以上的芯片接合层3，更优选使用在0.2～10MPa范围内的芯片接合层3。芯片接合层3的剪切胶粘力为至少0.2MPa以上时，即使不经加热工序而进行丝焊工序，芯片接合层3与半导体芯片5或被粘物6的胶粘面上也不会因该工序中的超声波振动或加热而产生剪切变形。即，半导体元件不会因丝焊时的超声波振动而移动，由此防止丝焊的成功率降低。
所述丝焊是通过焊线7将被粘物6的端子部(内部引线)的末端与半导体芯片上的电极焊盘(未图示)电连接的工序(参照图3)。作为所述焊线7，可以使用例如：金线、铝线或铜线等。进行丝焊时的温度在80～250℃、优选80～220℃的范围内进行。另外，其加热时间进行数秒～数分钟。接线是在加热到所述温度范围内的状态下，通过组合使用超声波的振动能和施加电压加压的压接能来进行。
本工序可以不进行利用芯片接合层3a的固着而实施。另外，本工序的过程中，不利用芯片接合层3a使半导体芯片5与被粘物6固着。
所述密封工序，是利用密封树脂8对半导体芯片5进行密封的工序(参照图3)。本工序是为了保护被粘物6上搭载的半导体芯片5和焊线7而进行的。本工序通过用金属模具将密封用树脂成形来进行。作为密封树脂8，可以使用例如环氧类树脂。树脂密封时通常在175℃的加热温度下进行60～90秒，但是，本发明不限于此，例如，也可以在165℃～185℃下进行数分钟的固化。由此，使密封树脂固化，同时通过芯片接合层3a使半导体芯片5与被粘物6固接。即，本发明中，即使在不进行后述的后固化工序的情况下，在本工序中也能够利用芯片接合层3a进行固接，从而能够有助于制造工序数的减少及半导体装置制造周期的缩短。
所述后固化工序中，使在所述密封工序中固化不充分的密封树脂8完全固化。即使在密封工序中未利用芯片接合层3a进行固接的情况下，在本工序中也能够在密封树脂8固化的同时利用芯片接合层3a进行固接。本工序中的加热温度因密封树脂种类而异，例如，在165～185℃的范围内，加热时间为约0.5小时～约8小时。
另外，如图4所示，本发明的切割/芯片接合薄膜也能够优选用于将多个半导体芯片层压而进行三维安装的情况。图4是显示通过芯片接合薄膜对半导体芯片进行三维安装的例子的断面示意图。图4所示的三维安装的情况下，首先将切割为与半导体芯片相同尺寸的至少一个芯片接合层3a暂时固着在被粘物6上，然后通过芯片接合层3a将半导体芯片5暂时固着，使半导体芯片5的丝焊面为上侧。然后，避开半导体芯片5的电极焊盘部分将芯片接合薄膜13暂时固着。进而，将另外的半导体芯片15暂时固着在芯片接合薄膜13上，使半导体芯片15的丝焊面为上侧。
然后，不进行加热工序而进行丝焊工序。由此，通过焊线7将半导体芯片5及另外的半导体芯片15的各个电极焊盘与被粘物6电连接。
接着，进行利用密封树脂8将半导体芯片5等密封的密封工序，使密封树脂固化。与此同时，被粘物6与半导体芯片5之间通过芯片接合层3a固接。另外，半导体芯片5与另外的半导体芯片15之间也通过芯片接合薄膜13固接。另外，密封工序后也可以进行后固化工序。
即使在半导体芯片的三维安装的情况下，由于不对芯片接合层3a、13进行利用加热的加热处理，因此实现了制造工序的简化和成品率的提高。另外，由于不会发生被粘物6产生翘曲、或半导体芯片5和另外的半导体芯片15产生裂纹的情况，因此，能够使半导体元件进一步薄型化。
另外，如图5所示，也可以进行通过芯片接合薄膜在半导体芯片间层压垫片的三维安装。图5是显示利用芯片接合薄膜隔着垫片对两个半导体芯片进行三维安装的例子的断面示意图。
图5所示的三维安装的情况下，首先在被粘物6上依次层压芯片接合层3a、半导体芯片5和芯片接合薄膜21而使其暂时固着。进而，在芯片接合薄膜21上依次层压垫片9、芯片接合薄膜21、芯片接合层3a和半导体芯片5而使其暂时固着。
然后，如图5所示，不进行加热工序而进行丝焊工序。由此，通过焊线7将半导体芯片5的电极焊盘与被粘物6电连接。
接着，进行利用密封树脂8将半导体芯片5密封的密封工序，使密封树脂8固化，同时使被粘物与半导体芯片5之间、以及半导体芯片5与垫片9之间通过芯片接合层3a、21而固接。由此，得到半导体封装体。密封工序优选仅将半导体芯片5侧单面密封的一次性密封法。密封是为了保护粘合片上粘贴的半导体芯片5而进行的，作为其方法有代表性的是使用密封树脂8在金属模具中成形的方法。此时，通常使用由具有多个腔室的上金属模具和下金属模具构成的金属模具，同时进行密封工序。树脂密封时的加热温度，优选例如在170～180℃的范围内。密封工序后也可以进行后固化工序。
另外，作为所述垫片9没有特别限制，可以使用例如现有公知的硅片、聚酰亚胺薄膜等。另外，所述垫片也可以使用芯材。作为芯材没有特别限制，可以使用现有公知的芯材。具体而言，可以使用薄膜(例如，聚酰亚胺薄膜、聚酯薄膜、聚对苯二甲酸乙二醇酯薄膜、聚萘二甲酸乙二醇酯薄膜、聚碳酸酯薄膜等)、用玻璃纤维或塑料制无纺纤维增强的树脂衬底、硅晶片、硅衬底或玻璃衬底等。
(其它事项)
在所述衬底等上对半导体元件进行三维安装时，在形成半导体元件的电路一侧的面上形成有缓冲涂膜。作为该缓冲涂膜可以列举例如由氮化硅膜或聚酰亚胺树脂等耐热树脂形成的缓冲涂膜。
另外，半导体元件的三维安装时，各阶段使用的芯片接合薄膜不限于同一组成的芯片接合薄膜，可以根据制造条件或用途等适当变更。
另外，上述实施方式中，对在衬底等上层压多个半导体元件后，一次性进行丝焊工序的方式进行了说明，但是，本发明不限于此。例如，也可以在每次将半导体元件层压到衬底等上后进行丝焊工序。
实施例
以下，举例对本发明的优选实施例进行详细说明。但是，该实施例中记载的材料或配合量等，如果没有特别限定的记载，则并不意味本发明的范围仅限于此，只不过是举例而已。
(实施例1)
使相对于100重量份以丙烯酸丁酯为主成分的聚合物(根上工业株式会社制，パラクロンSN-170)为3重量份的异氰酸酯类交联剂(コロネ一トHX，日本聚氨酯制)、12重量份环氧树脂(日本环氧树脂株式会社制，エピコ一ト1003)、7重量份酚树脂(三井化学株式会社制，ミレツクスXLC-CC)和20重量份作为无机填充材料的氧化钛改性二氧化硅(平均粒径：0.5μm，トクヤマ公司制：ST-600)溶解于甲乙酮中，制备浓度20重量％的胶粘剂组合物溶液。
利用模池刮刀涂布机(fountain coater)将该胶粘剂组合物的溶液涂布于由进行了硅氧烷脱模处理的聚对苯二甲酸乙二醇酯膜(厚度50μm)制成的脱模处理膜(芯材)上，并以150℃、10m/秒的热风喷射使其干燥。由此，制成在脱模处理膜上具有厚度25μm的芯片接合层的本实施例1的芯片接合薄膜。
(实施例2)
在100重量份丙烯酸类粘合材料中添加3重量份异氰酸酯类交联剂(コロネ一トHX，日本聚氨酯制)，制备丙烯酸类粘合剂。另外，在所述丙烯酸类粘合剂中混合以70重量份丙烯酸-2-乙基己酯、25重量份丙烯酸正丁酯和5重量份丙烯酸为结构单体的丙烯酸类共聚物，使用30重量份二氧化硅(平均粒径0.5μm，日本触媒公司制)作为无机填充材料，使浓度为20重量％，并溶解于甲乙酮中制成胶粘剂溶液，除此以外与上述实施例1同样操作，制成本实施例2的芯片接合薄膜。
(比较例1)
本比较例1中，使用不添加无机填充剂的胶粘剂组合物溶液，除此以外，与上述实施例1同样操作，制成本比较例的芯片接合薄膜。
(比较例2)
本比较例2中，无机填充剂的添加量变为15重量份，除此以外，与上述实施例1同样操作，制成本比较例的芯片接合薄膜。
(拾取性评价)
通过以下方法，对上述实施例1～2及比较例1～2的芯片接合薄膜进行算术平均粗糙度、拾取性及剥离力的评价。这些结果如表1所示。
在层压温度40℃、线压4kgf/cm的条件下，在实施例及比较例得到的芯片接合薄膜上粘贴切割薄膜(日东电工公司制：DU-300)，制成切割/芯片接合薄膜。
进而，在50℃下将各切割/芯片接合薄膜粘贴到晶片(直径8英寸、厚度100μm)的背面。使切割/芯片接合薄膜侧的贴合面为芯片接合薄膜。
然后，使用切片机，切割晶片。切割条件设定为：主轴转数40000rpm，切割速度50mm/秒，形成尺寸5mm×5mm见方的半导体芯片。
然后，进行半导体芯片的拾取，考查其成功率。拾取条件设定为：针数5根，下拉量6mm，上推量400μm，上推速度80mm/秒。另外，拾取使用拾取装置(NESマシナリ一公司制：CPS-100)，进行100个半导体芯片的拾取。成功率是计数半导体芯片中无破损、能够从切割薄膜上剥离的带芯片接合薄膜的半导体芯片的数目。
剥离力评价是对所述各切割/芯片接合薄膜，测定在剥离速度300mm/分钟、90度的条件下以10mm宽度将芯片接合薄膜从切割薄膜上剥离时的剥离力。结果示于下表1。
芯片接合薄膜(芯片接合层)中切割薄膜(粘合剂层)侧的算术平均粗糙度X(μm)及切割薄膜中芯片接合薄膜侧的算术平均粗糙度Y(μm)，根据JIS表面粗糙度(B0601)，使用WYKO公司制造的非接触三维粗糙度测定装置(NT3300)进行测定。测定条件是在50倍的条件下用中值滤波器(Median filter)处理测定数据而求出。测定中，对每一试样变换测定位置分别测定5次，求出其平均值作为算术平均粗糙度。
(结果)
从表1可以明显看出，实施例1～2的切割/芯片接合薄膜，在切割时不发生芯片飞离，另外，显示良好的拾取性。即，本实施例的切割/芯片接合薄膜的情况下，能够提高成品率而制造半导体封装体。
与此相对，比较例1的芯片接合薄膜由于其表面过于光滑，因此与切割带的剥离性降低，不能进行拾取，芯片产生裂纹或缺口等破损。另外，比较例2的芯片接合薄膜由于失去光滑性、凹凸差大，因此与切割带的密合性降低，拾取时发生芯片飞离。
表1
  实施例1   实施例2   比较例1   比较例2
  芯片接合薄膜的算术平均粗糙度X[μm] 0.06 0.22 0.045 1.1
  切割薄膜的算术平均粗糙度Y[μm] 0.036 0.05 0.037 0.043
  拾取成功率[％]   100   100   0   70
  剥离力[N/10mm]   0.1   0.06   3.6   0.02

Claims (11)

1.一种切割/芯片接合薄膜，在基材上具有粘合剂层，并且在该粘合剂层上具有芯片接合层，其特征在于，
所述芯片接合层中粘合剂层侧的算术平均粗糙度X(μm)为0.015μm～1μm，
所述粘合剂层中芯片接合层侧的算术平均粗糙度Y(μm)为0.03μm～1μm，
所述X与Y之差的绝对值为0.015以上。
2.权利要求1所述的切割/芯片接合薄膜，其特征在于，所述芯片接合层中粘合剂层侧的算术平均粗糙度X(μm)大于所述粘合剂层中芯片接合层侧的算术平均粗糙度Y(μm)。
3.权利要求1所述的切割/芯片接合薄膜，其特征在于，所述芯片接合层含有橡胶成分、环氧树脂成分及无机填充材料。
4.权利要求3所述的切割/芯片接合薄膜，其特征在于，所述无机填充材料的含量相对于100重量份有机树脂组合物在20～80重量份的范围内。
5.权利要求3所述的切割/芯片接合薄膜，其特征在于，所述无机填充材料的平均粒径在0.1～5μm的范围内。
6.权利要求1所述的切割/芯片接合薄膜，其特征在于，所述芯片接合层含有热塑性树脂。
7.权利要求6所述的切割/芯片接合薄膜，其特征在于，所述热塑性树脂为丙烯酸树脂。
8.权利要求1所述的切割/芯片接合薄膜，其特征在于，所述芯片接合层含有热固性树脂及热塑性树脂。
9.权利要求8所述的切割/芯片接合薄膜，其特征在于，所述热塑性树脂为丙烯酸树脂。
10.权利要求8所述的切割/芯片接合薄膜，其特征在于，所述热固性树脂为环氧树脂或酚树脂中的至少一种。
11.权利要求1所述的切割/芯片接合薄膜，其特征在于，所述芯片接合层中添加交联剂。
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JP2008218571A (ja) 2008-09-18
WO2008108119A1 (ja) 2008-09-12
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US7998552B2 (en) 2011-08-16
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