CN101589483B - 含阳离子敏感层的复合制品 - Google Patents

含阳离子敏感层的复合制品 Download PDF

Info

Publication number
CN101589483B
CN101589483B CN2007800504054A CN200780050405A CN101589483B CN 101589483 B CN101589483 B CN 101589483B CN 2007800504054 A CN2007800504054 A CN 2007800504054A CN 200780050405 A CN200780050405 A CN 200780050405A CN 101589483 B CN101589483 B CN 101589483B
Authority
CN
China
Prior art keywords
composite article
silicone
sio
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007800504054A
Other languages
English (en)
Chinese (zh)
Other versions
CN101589483A (zh
Inventor
D·E·凯特索里斯
E·麦克奎斯顿
T·D·巴纳德
N·格里尔
P·沙尔克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of CN101589483A publication Critical patent/CN101589483A/zh
Application granted granted Critical
Publication of CN101589483B publication Critical patent/CN101589483B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/30—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/42—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating of an organic material and at least one non-metal coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/40—Coatings comprising at least one inhomogeneous layer
    • C03C2217/43—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
    • C03C2217/46—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase
    • C03C2217/465—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase having a specific shape
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/40—Coatings comprising at least one inhomogeneous layer
    • C03C2217/43—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
    • C03C2217/46—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase
    • C03C2217/47—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase consisting of a specific material
    • C03C2217/475—Inorganic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/266—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension of base or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
    • Y10T428/31609—Particulate metal or metal compound-containing
    • Y10T428/31612—As silicone, silane or siloxane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Laminated Bodies (AREA)
  • Electroluminescent Light Sources (AREA)
CN2007800504054A 2006-12-20 2007-12-19 含阳离子敏感层的复合制品 Expired - Fee Related CN101589483B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US87095106P 2006-12-20 2006-12-20
US60/870,951 2006-12-20
PCT/US2007/026030 WO2008079275A1 (en) 2006-12-20 2007-12-19 Composite article including a cation-sensitive layer

Publications (2)

Publication Number Publication Date
CN101589483A CN101589483A (zh) 2009-11-25
CN101589483B true CN101589483B (zh) 2012-06-06

Family

ID=39427573

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800504054A Expired - Fee Related CN101589483B (zh) 2006-12-20 2007-12-19 含阳离子敏感层的复合制品

Country Status (6)

Country Link
US (1) US20100051920A1 (enExample)
EP (1) EP2095446A1 (enExample)
JP (1) JP2010514139A (enExample)
KR (1) KR20090092324A (enExample)
CN (1) CN101589483B (enExample)
WO (1) WO2008079275A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2125362A1 (en) * 2007-02-22 2009-12-02 Dow Corning Corporation Composite article having excellent fire resistance
WO2008103419A2 (en) * 2007-02-22 2008-08-28 Dow Corning Corporation Composite article having excellent fire and impact resistance and method of making the same
KR20090120468A (ko) * 2007-02-22 2009-11-24 다우 코닝 코포레이션 우수한 내화성을 갖는 복합체 물품
JP2012074512A (ja) * 2010-09-28 2012-04-12 Sekisui Chem Co Ltd 光半導体装置用ダイボンド材及びそれを用いた光半導体装置
JP6081774B2 (ja) * 2012-10-30 2017-02-15 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
JP6680692B2 (ja) 2014-04-16 2020-04-15 ザ ケマーズ カンパニー エフシー リミテッド ライアビリティ カンパニー より望ましいフルオロプロパン及びフルオロプロペンへのクロロフルオロプロパン及びクロロフルオロプロペンの変換
JP6375226B2 (ja) * 2014-12-26 2018-08-15 富士フイルム株式会社 硬化性組成物、転写フィルム、画像表示装置の前面板、前面板一体型センサー、画像表示装置および画像表示装置の前面板の製造方法
US20180033614A1 (en) * 2016-07-27 2018-02-01 Versum Materials Us, Llc Compositions and Methods Using Same for Carbon Doped Silicon Containing Films
JP6754318B2 (ja) * 2017-05-10 2020-09-09 信越化学工業株式会社 ダイボンディング用シリコーン樹脂組成物、ダイボンド材及び光半導体装置
JP7003075B2 (ja) * 2019-02-15 2022-01-20 信越化学工業株式会社 ウェハーレベル光半導体デバイス用樹脂組成物及び該組成物を用いたウェハーレベル光半導体デバイス
TW202242913A (zh) * 2021-04-23 2022-11-01 美商Ｄｄｐ 特殊電子材料 Ｕｓ 9有限責任公司 導電複合膜

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0507727A2 (en) * 1991-03-06 1992-10-07 Ciba-Geigy Ag Glass coating with improved adhesion and weather resistance
CN1380876A (zh) * 2000-04-18 2002-11-20 舱壁玻璃公司 强化玻璃体
CN1778002A (zh) * 2003-03-04 2006-05-24 陶氏康宁公司 有机发光二极管
WO2006088645A1 (en) * 2005-02-16 2006-08-24 Dow Corning Corporation Reinforced silicone resin film and method of preparing same

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL131800C (enExample) * 1965-05-17
US4087585A (en) * 1977-05-23 1978-05-02 Dow Corning Corporation Self-adhering silicone compositions and preparations thereof
US4260780A (en) * 1979-11-27 1981-04-07 The United States Of America As Represented By The Secretary Of The Air Force Phenylmethylpolysilane polymers and process for their preparation
US4276424A (en) * 1979-12-03 1981-06-30 Petrarch Systems Methods for the production of organic polysilanes
US4314956A (en) * 1980-07-23 1982-02-09 Dow Corning Corporation High yield silicon carbide pre-ceramic polymers
US4324901A (en) * 1981-04-29 1982-04-13 Wisconsin Alumni Research Foundation Soluble polysilastyrene and method for preparation
US4530879A (en) * 1983-03-04 1985-07-23 Minnesota Mining And Manufacturing Company Radiation activated addition reaction
US4510094A (en) * 1983-12-06 1985-04-09 Minnesota Mining And Manufacturing Company Platinum complex
FR2591587A1 (fr) * 1985-12-17 1987-06-19 Saint Gobain Vitrage Film organo-mineral depose sur un substrat en verre eventuellement revetu d'une ou plusieurs couches metalliques minces.
US4766176A (en) * 1987-07-20 1988-08-23 Dow Corning Corporation Storage stable heat curable organosiloxane compositions containing microencapsulated platinum-containing catalysts
JPH0214244A (ja) * 1988-06-30 1990-01-18 Toray Dow Corning Silicone Co Ltd 加熱硬化性オルガノポリシロキサン組成物
JP3029680B2 (ja) * 1991-01-29 2000-04-04 東レ・ダウコーニング・シリコーン株式会社 オルガノペンタシロキサンおよびその製造方法
JPH06329914A (ja) * 1993-05-18 1994-11-29 Toray Dow Corning Silicone Co Ltd 室温硬化性オルガノポリシロキサン組成物およびその製造方法
US5469961A (en) * 1994-08-15 1995-11-28 Chang; Chun Y. Combined minidisc box
EP0910931B1 (en) * 1996-07-10 2001-09-19 International Business Machines Corporation Siloxane and siloxane derivatives as encapsulants for organic light emitting devices
JP3996969B2 (ja) * 1997-01-21 2007-10-24 東レ・ダウコーニング株式会社 シリコーンエラストマーコーティングシート状物およびその製造方法
EP1376226B1 (en) * 1997-08-08 2010-10-13 Dai Nippon Printing Co., Ltd. Structure for pattern formation, method for pattern formation, and application thereof
WO2000036665A1 (en) * 1998-12-16 2000-06-22 Battelle Memorial Institute Environmental barrier material for organic light emitting device and method of making
JP2000302487A (ja) * 1999-04-23 2000-10-31 Nippon Sheet Glass Co Ltd ガラス基板およびその製造方法
US6501219B1 (en) * 1999-07-29 2002-12-31 General Electric Company Shatter-resistant incandescent lamp, silicone coating composition, and method
US6524598B2 (en) * 2000-07-10 2003-02-25 The Procter & Gamble Company Cosmetic compositions
US6534581B1 (en) * 2000-07-20 2003-03-18 Dow Corning Corporation Silicone composition and electrically conductive silicone adhesive formed therefrom
WO2002017689A1 (en) * 2000-08-23 2002-02-28 Idemitsu Kosan Co., Ltd. Organic el display
US6664137B2 (en) * 2001-03-29 2003-12-16 Universal Display Corporation Methods and structures for reducing lateral diffusion through cooperative barrier layers
JP2003163078A (ja) * 2001-11-28 2003-06-06 Hitachi Ltd 表示装置
JP3906985B2 (ja) * 2002-05-24 2007-04-18 三井化学株式会社 金属拡散バリア膜、金属拡散バリア膜の形成方法および半導体装置
CN1322058C (zh) * 2002-06-05 2007-06-20 陶氏康宁亚洲株式会社 聚硅氧烷薄膜及其制备方法
JP2004361692A (ja) * 2003-04-07 2004-12-24 Dow Corning Asia Ltd 光伝送部材用硬化性オルガノポリシロキサン樹脂組成物、オルガノポリシロキサン樹脂硬化物からなる光伝送部材および光伝送部材の製造方法
JP4163567B2 (ja) * 2003-07-09 2008-10-08 株式会社 日立ディスプレイズ 発光型表示装置
WO2005047200A1 (ja) * 2003-11-13 2005-05-26 Sumitomo Corporation フレキシブル基板及びコーティング液
US20050237462A1 (en) * 2004-04-26 2005-10-27 Eastman Kodak Company Alignment layer for liquid crystal display
KR20070012553A (ko) * 2004-05-14 2007-01-25 다우 코닝 도레이 캄파니 리미티드 오가노폴리실록산 수지 경화물로 이루어진 독립 필름, 이의제조방법 및 적층 필름
KR101272208B1 (ko) * 2005-02-16 2013-06-07 다우 코닝 도레이 캄파니 리미티드 강화 실리콘 수지 필름 및 이의 제조방법
JP4636242B2 (ja) * 2005-04-21 2011-02-23 信越化学工業株式会社 光半導体素子封止材及び光半導体素子
WO2007044181A2 (en) * 2005-10-05 2007-04-19 Dow Corning Corporation Coated substrates and methods for their preparation
KR101447272B1 (ko) * 2010-12-31 2014-10-08 제일모직주식회사 폴리카보네이트 수지 조성물 및 이를 포함하는 성형품
KR101997921B1 (ko) * 2011-09-05 2019-07-08 엘지전자 주식회사 태양전지 모듈

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0507727A2 (en) * 1991-03-06 1992-10-07 Ciba-Geigy Ag Glass coating with improved adhesion and weather resistance
CN1380876A (zh) * 2000-04-18 2002-11-20 舱壁玻璃公司 强化玻璃体
CN1778002A (zh) * 2003-03-04 2006-05-24 陶氏康宁公司 有机发光二极管
WO2006088645A1 (en) * 2005-02-16 2006-08-24 Dow Corning Corporation Reinforced silicone resin film and method of preparing same

Also Published As

Publication number Publication date
CN101589483A (zh) 2009-11-25
US20100051920A1 (en) 2010-03-04
JP2010514139A (ja) 2010-04-30
WO2008079275A1 (en) 2008-07-03
KR20090092324A (ko) 2009-08-31
EP2095446A1 (en) 2009-09-02

Similar Documents

Publication Publication Date Title
CN101589483B (zh) 含阳离子敏感层的复合制品
JP5357046B2 (ja) 硬化シリコーン組成物で被覆またはラミネートされたガラス基板
CN101600664B (zh) 用多层固化的有机硅树脂组合物涂覆或层合的玻璃基材
JP5253380B2 (ja) テルル化カドミウムベース光起電力デバイスおよびその調製方法
CN101473448B (zh) 硒化铟铜基光伏器件及其制造方法
US20100093242A1 (en) Composite Article Having Excellent Fire Resistance
JP4933610B2 (ja) 銅インジウム二セレン化物をベースとする光起電デバイス及びその光起電デバイスを作製する方法
CN101473447B (zh) 硒化铟铜基光伏器件及其制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120606

Termination date: 20141219

EXPY Termination of patent right or utility model