JP4933610B2 - 銅インジウム二セレン化物をベースとする光起電デバイス及びその光起電デバイスを作製する方法 - Google Patents
銅インジウム二セレン化物をベースとする光起電デバイス及びその光起電デバイスを作製する方法 Download PDFInfo
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- JP4933610B2 JP4933610B2 JP2009506541A JP2009506541A JP4933610B2 JP 4933610 B2 JP4933610 B2 JP 4933610B2 JP 2009506541 A JP2009506541 A JP 2009506541A JP 2009506541 A JP2009506541 A JP 2009506541A JP 4933610 B2 JP4933610 B2 JP 4933610B2
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- silicone resin
- silicone
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Images
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
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Description
本発明は、米国空軍によって認められた契約番号F29601-03-C-0028のもとで、政府の援助によってなされた。米国政府は本発明に所定の権利を有する。
本発明は一般に、銅インジウム二セレン化物をベースとする光起電デバイスおよびこの光起電デバイスの製造法に関する。より詳細には、本発明はポリマー層を含む基板を備える光起電デバイスに関する。
太陽光および他の光源から電気を発生させるための銅インジウム二セレン化物(CIS)をベースとする光起電デバイスは周知である。これらCISをベースとする光起電デバイスは、デバイスが光源にさらされる任意の用途では電気を提供するために有用である。その結果、CISをベースとする光起電デバイスの潜在的用途は広範囲に及ぶ。
(R1R2 2SiO1/2)w(R2 2SiO2/2)x(R2SiO3/2)y(SiO4/2)z (I)
式中、R1およびR2は、上で説明し例示したとおりであり、w、x、yおよびzはモル分率である。通常、式(I)で表されるシリコーン樹脂は、1分子当たり少なくとも平均2個のケイ素結合アルケニル基を有する。より具体的には、添え字wは、通常0〜0.9、あるいは0.02〜0.75、あるいは0.05〜0.3の値を有する。添え字xは、通常、0〜0.9、あるいは0〜0.45、あるいは0〜0.25の値を有する。添え字yは、通常、0〜0.99、あるいは0.25〜0.8、あるいは0.5〜0.8の値を有する。添え字zは、通常、0〜0.85、あるいは0〜0.25、あるいは0〜0.15の値を有する。また、比y+z/(w+x+y+z)は通常0.1〜0.99、あるいは0.5〜0.95、あるいは0.65〜0.9である。さらに、比w+x/(w+x+y+z)は通常0.01〜0.90、あるいは0.05〜0.5、あるいは0.1〜0.35である。
(Vi2MeSiO1/2)0.25(PhSiO3/2)0.75、(ViMe2SiO1/2)0.25(PhSiO3/2)0.75、(ViMe2SiO1/2)0.25(MeSiO3/2)0.25(PhSiO3/2)0.50、(ViMe2SiO1/2)0.15(PhSiO3/2)0.75(SiO4/2)0.1、および(Vi2MeSiO1/2)0.15(ViMe2SiO1/2)0.1(PhSiO3/2)0.75
上記式中、Meはメチル、Viはビニル、Phはフェニルであり、丸括弧の外の数字の添え字は、式(I)について上で説明したw、x、y、またはzに対応するモル分率を示す。前述の式中の各単位の順序は、決して本発明の範囲を制限すると見られるべきではない。
(HMe2SiO1/2)0.25(PhSiO3/2)0.75、(HMeSiO2/2)0.3(PhSiO3/2)0.6(MeSiO3/2)0.1、および(Me3SiO1/2)0.1(H2SiO2/2)0.1(MeSiO3/2)0.4(PhSiO3/2)0.4
式中、Meはメチル、Phはフェニルであり、丸括弧の外の数字の添え字はモル分率を示す。前述の式中の各単位の順序は、決して本発明の範囲を制限すると見られるべきではない。
Vi4Si、PhSiVi3、MeSiVi3、PhMeSiVi2、Ph2SiVi2、およびPhSi(CH2CH=CH2)3,
式中、Meはメチル、Phはフェニル、Viはビニルである。
HR1 2Si-R3-SiR1 2H (III)
式中、R1は上で定義し例示したとおりであり、R3は、下記構造から選択される式を有する脂肪族不飽和のないヒドロカルビレン基である。
PhSi(OSiMe2H)3、Si(OSiMe2H)4、MeSi(OSiMe2H)3、およびPh2Si(OSiMe2H)2
式中、Meはメチル、Phはフェニルである。
(R1R4 2SiO1/2)w(R4 2SiO2/2)x(R4SiO3/2)y(SiO4/2)z (IV)
式中、R1、R4、w、x、y、およびzはそれぞれ、上で定義し例示したとおりである。
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.12(PhSiO3/2)0.88、
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.17(PhSiO3/2)0.83、
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.17(MeSiO3/2)0.17(PhSiO3/2)0.66、
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.15(PhSiO3/2)0.75(SiO4/2)0.10、および
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.08((HMe2SiC6H4SiMe2CH2CH2)Me2SiO1/2)0.06(PhSiO3/2)0.86
式中、Meはメチル、Phはフェニルであり、C6H4はパラフェニレン基を示し、丸括弧の外の数字の添え字はモル分率を示す。前述の式中の各単位の順序は、決して本発明の範囲を制限すると見られるべきではない。
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.12(PhSiO3/2)0.88、
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.17(PhSiO3/2)0.83、
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.17(MeSiO3/2)0.17(PhSiO3/2)0.66、
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.15(PhSiO3/2)0.75(SiO4/2)0.10、および
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.08((HMe2SiC6H4SiMe2CH2CH2)Me2SiO1/2)0.06(PhSiO3/2)0.86
式中、Meはメチル、Phはフェニルであり、C6H4はパラフェニレン基を示し、丸括弧の外の数字の添え字はモル分率を示す。前述の式中の各単位の順序は、決して本発明の範囲を制限すると見られるべきではない。
ViMe2SiO(Me2SiO)aSiMe2Vi、ViMe2SiO(Ph2SiO)aSiMe2Vi、およびViMe2SiO(PhMeSiO)aSiMe2Vi(式中、Meはメチル、Phはフェニル、Viはビニルであり、添え字aは1〜4の値を有す。)
のシリコーンゴムが含まれるが、これらに限定されない。シリコーンゴム(D)(i)は、単一のシリコーンゴムであっても、あるいは(D)(i)についての式をそれぞれが満たす2種またはそれ以上の異なるシリコーンゴムを含む混合物であってもよい。
HMe2SiO(Me2SiO)bSiMe2H、HMe2SiO(Ph2SiO)bSiMe2H、HMe2SiO(PhMeSiO)bSiMe2H、およびHMe2SiO(Ph2SiO)2(Me2SiO)2SiMe2H(式中、Meはメチル、Phはフェニルであり、添え字bは1〜4の値を有する。)
のシリコーンゴムが含まれるが、これらに限定されない。成分(D)(ii)は、単一のシリコーンゴムであっても、あるいは(D)(ii)についての式をそれぞれが満たす2種またはそれ以上の異なるシリコーンゴムを含む混合物であってもよい。
R5R1 2SiO(R1R5SiO)cSiR1 2R5、および
R1R2 2SiO(R2 2SiO)dSiR2 2R1
(上記式中、R1およびR5は上で定義し例示したとおりであり、cおよびdはそれぞれ、4〜1000、あるいは10〜500、あるいは10〜50の値を有する。)
のゴムから選択される少なくとも1種のシリコーンゴム(D)(iii)とを、ヒドロシリル化触媒(c)と、場合によっては有機溶媒の存在下で反応させることによって調製されるゴム改質シリコーン樹脂(A1)を含む。ただし、シリコーン樹脂(A)は1分子当たり少なくとも平均2個のケイ素結合アルケニル基を有し、シリコーンゴム(D)(iii)は1分子当たり少なくとも平均2個のケイ素結合水素原子を有し、シリコーン樹脂(A)中のケイ素結合アルケニル基に対するシリコーンゴム(D)(iii)中のケイ素結合水素原子のモル比が0.01〜0.5である。「少なくとも1種のシリコーンゴム」とは、上記式で表されるゴムのうち1種だけは (D)(iii)に必要であることを意味し、上記式で表されるゴムの組合せを使用してもよいことを意味する。有機溶媒が存在する場合には、ゴム改質シリコーン樹脂(A1)が有機溶媒中で混ざり合い、沈殿物または懸濁液を形成することはない。
(R1R6 2SiO1/2)w'(R6 2SiO2/2)x'(R6SiO3/2)y'(SiO4/2)z' (V)
上記式中、R1およびR6は上で定義し例示したとおりであり、w'は0〜0.8、あるいは0.02〜0.75、あるいは0.05〜0.3であり、x'は0〜0.95、あるいは0.05〜0.8、あるいは0.1〜0.3であり、y'は0〜1、あるいは0.25〜0.8、あるいは0.5〜0.8であり、z'は0〜0.99、あるいは0.2〜0.8、あるいは0.4〜0.6である。シリコーン樹脂(A2)は、1分子当たり少なくとも平均2個のケイ素結合水素原子、ヒドロキシ基、または加水分解性基を有する。本明細書中で使用する用語「加水分解性基」とは、そのケイ素結合基が、室温(約23±2℃)〜100℃の任意の温度で数分、たとえば30分以内に触媒のない状態で水と反応してシラノール(Si-OH)基を形成することを意味する。R6で表される加水分解性基の例には、-Cl、-Br、-OR7、-OCH2CH2OR7、CH3C(=O)O-、Et(Me)C=N-O-、CH3C(=O)N(CH3)-および-ONH2(式中、R7はC1〜C8のヒドロカルビルまたはC1〜C8のハロゲン置換ヒドロカルビルである。)が含まれるが、これらに限定されない。
(MeSiO3/2)0.9(Me(HO)SiO2/2)0.1、(PhSiO3/2)0.7(Ph(MeO)SiO2/2)0.3、
(Me3SiO1/2)0.8(SiO4/2)0.15(HOSiO3/2)0.05、
(MeSiO3/2)0.67(PhSiO3/2)0.23(Ph(HO)SiO2/2)0.1、
(MeSiO3/2)0.45(PhSiO3/2)0.24(Ph(HO)SiO2/2)0.16(Ph2SiO2/2)0.1(PhMeSiO2/2)0.05、
(PhSiO3/2)0.3(Ph(HO)SiO2/2)0.1(MeSiO3/2)0.4(Me(HO)SiO2/2)0.05(PhSiO3/2)0.1(PhMeSiO2/2)0.05、および
(PhSiO3/2)0.3(Ph(MeO)SiO2/2)0.1(MeSiO3/2)0.1(PhMeSiO2/2)0.5
上記式中、Meはメチル、Phはフェニルであり、丸括弧の外の数字の添え字はモル分率を示し、添え字nは、シリコーン樹脂の数平均分子量が通常500〜50,000となるような値を有する。前述の式中の各単位の順序は、決して本発明の範囲を制限すると見られるべきではない。
(Me(MeO)Si2/2)x'(MeSiO3/2)0.1、(Ph(HO)SiO2/2)x'(PhSiO3/2)y'、(Me3SiO1/2)w'(CH3COOSiO3/2)y'(SiO4/2)z'、(Ph(MeO)SiO2/2)x'(MeSiO3/2)y'(PhSiO3/2)y'、(Ph(MeO)(HO)SiO1/2)w'(MeSiO3/2)y'(PhSiO3/2)y'(Ph2SiO2/2)x'(PhMeSiO2/2)x'、(PhMe(MeO)SiO1/2)w'(Ph(HO)SiO2/2)x'(MeSiO3/2)y'(PhSiO3/2)y'(PhMeSiO2/2)x'、および(Ph(HO)SiO2/2)x'(PhSiO3/2)y'(MeSiO3/2)y'(PhMeSiO2/2)x'
上記式中、Meはメチル、Phはフェニルであり、w'、x'、y'、およびz'は上で定義したとおりであり、添え字y'は、シリコーン樹脂の数平均分子量が500〜50,000となる値を有する。前述の式中の各単位の順序は、決して本発明の範囲を制限すると見られるべきではない。
(Me(MeO)Si2/2)0.05(Me3SiO1/2)0.75(SiO4/2)0.2、
(Ph(HO)SiO2/2)0.09(MeSiO3/2)0.67(PhSiO3/2)0.24、
(Ph(MeO)SiO2/2)0.05(MeSiO3/2)0.45(PhSiO3/2)0.35(Ph2SiO2/2)0.1(PhMeSiO2/2)0.05、
(PhMe(MeO)SiO1/2)0.02(PhSiO3/2)0.4(MeSiO3/2)0.45(PhSiO3/2)0.1(PhMeSiO2/2)0.03、および
(Ph(HO)SiO2/2)0.04(PhMe(MeO)SiO1/2)0.03(PhSiO3/2)0.36(MeSiO3/2)0.1(PhMeSiO2/2)0.47
上記式中、Meはメチル、Phはフェニルであり、丸括弧の外の数字の添え字はモル分率を示す。前述の式中の各単位の順序は、決して本発明の範囲を制限すると見られるべきではない。
(Me(MeO)Si2/2)x'(MeSiO3/2)y'、(Ph(HO)SiO2/2)x'(PhSiO3/2)y'、
(Ph(MeO)SiO2/2)x'(PhSiO3/2)y'(MeSiO3/2)y'(PhSiO3/2)y'(PhMeSiO2/2)x'、および
(CH3COOSiO3/2)y'(PhSiO3/2)y'(SiO4/2)z'(Me2SiO2/2)x'(Ph2SiO2/2)x'
上記式中、Meはメチル、Phはフェニルであり、x'、y'、およびz'は上で定義したとおりであり、添え字y'は、シリコーン樹脂の数平均分子量が500〜50,000となる値を有する。前述の式中の各単位の順序は、決して本発明の範囲を制限すると見られるべきではない。
(Ph(HO)SiO2/2)0.03(PhSiO3/2)0.37(MeSiO3/2)0.45(PhSiO3/2)0.1(PhMeSiO2/2)0.05、および
(CH3COOSiO3/2)0.06(PhSiO3/2)0.3(SiO4/2)0.04(Me2SiO2/2)0.2(Ph2SiO2/2)0.4
式中、Meはメチル、Phはフェニルであり、丸括弧の外の数字の添え字はモル分率を示す。前述の式中の各単位の順序は、決して本発明の範囲を制限すると見られるべきではない。シリコーン樹脂(i)は、単一のシリコーン樹脂であっても、またはそれぞれが特定の式を有する2種またはそれ以上の異なるシリコーン樹脂を含む混合物であってもよい。シリコーン樹脂(i)は、単一のシリコーン樹脂であっても、またはそれぞれが特定の式を有する2種またはそれ以上の異なるシリコーン樹脂を含む混合物であってもよい。
Me2ViSiCl、Me3SiCl、MeSi(OEt)3、PhSiCl3、MeSiCl3、Me2SiCl2、PhMeSiCl2、SiCl4、Ph2SiCl2、PhSi(OMe)3、MeSi(OMe)3、PhMeSi(OMe)2、およびSi(OEt)4,
上記式中、Meはメチル、Etはエチル、及びPhはフェニルである。
(EtO)3SiO(Me2SiO)55Si(OEt)3、(EtO)3SiO(Me2SiO)16Si(OEt)3、(EtO)3SiO(Me2SiO)386Si(OEt)3、および(EtO)2MeSiO(PhMeSiO)10SiMe(OEt)2
上記式中、Meはメチル、及びEtがエチルである。
(Vi2MeSiO1/2)0.25(PhSiO3/2)0.75、(ViMe2SiO1/2)0.25(PhSiO3/2)0.75、
(ViMe2SiO1/2)0.25(MeSiO3/2)0.25(PhSiO3/2)0.50、(ViMe2SiO1/2)0.15(PhSi03/2)0.75(SiO4/2)0.1、および(Vi2MeSiO1/2)0.15(ViMe2SiO1/2)0.1(PhSiO3/2)0.75
式中、Meはメチル、Viはビニル、Phはフェニルであり、丸括弧の外の数字の添え字はモル分率を示す。前述の式中の各単位の順序は、決して本発明の範囲を制限すると見られるべきではない。
Vi4Si、PhSiVi3、MeSiVi3、PhMeSiVi2、Ph2SiVi2、およびPhSi(CH2CH=CH2)3
式中、Meはメチル、Phはフェニル、Viはビニルである。
PhSi(OSiMe2Vi)3、Si(OSiMe2Vi)4、MeSi(OSiMe2Vi)3およびPh2Si(OSiMe2Vi)2
式中、Meはメチル、Viはビニル、Phはフェニルである。
〔ステンレス鋼箔層と、Dow Corning FOX樹脂から形成されたシリコーン層とを備える基板〕
スピンコータ上の6"(15cm)×6"(15cm)のステンレス鋼箔層上に、Dow Corning 9-5101ハイドロジェンシルセスキオキサン樹脂を、2000rpmで30秒間塗布した。ステンレス鋼箔層は、厚さ25マイクロメートルの430ステンレス鋼であり、日本、東京のMarubeni Corporationから入手可能である。このステンレス鋼箔層上の樹脂を200℃の空気循環炉内で2時間硬化させて、箔層上にシリコーン層を形成した。シリコーン層の厚さは約1マイクロメートルであった。
〔ステンレス鋼箔層と、ハイドロジェンポリシロキサン樹脂から形成されるシリコーン層とを備える基板〕
トリクロロシランおよびジクロロシランを共加水分解し、洗浄し、水解物を縮合させて平均組成(H2SiO2/2)0.29(HSiO3/2)0.71の樹脂を得ることによって、ハイドロジェンポリシロキサン樹脂を調製した。この樹脂を、実施例1で説明したようにステンレス鋼箔層上に塗布した。ステンレス鋼箔層上の樹脂を200℃の空気循環炉内で2時間硬化させて、箔層上にシリコーン層を形成した。
〔実施例1で作製した基板を備えるCIGS(銅インジウムガリウム二セレン化物)光起電デバイスの製造および性能〕
実施例1で作製した基板上にモリブデンをスパッタリングして、厚さ約0.5マイクロメートルのモリブデン層を形成させた。このモリブデン層上に、セレン雰囲気中で銅、インジウムおよびガリウムを共蒸発させて、厚さ約2マイクロメートルのCISをベースとする太陽光吸収体層を形成した。次いで、このCISをベースとする太陽光吸収体層上に、湿式CBD浴プロセスによりCdSを堆積させて、厚さ約50nmの窓層を形成した。この窓層上にITOをRFスパッタリングしてトップ接点層を形成し、次いでトップ接点層上に銅グリッドを蒸着させた。AM1.5照明条件下で電池性能を試験し、5〜7%の効率が測定された。
〔実施例2で作製した基板を備えるCISをベースとする光起電デバイスの製造および試験〕
実施例2で作製した基板を含め実施例3で説明したのと同様にして、CISをベースとする光起電デバイスを製造した。これらのCISをベースとする光起電デバイスを、実施例3で示した条件と同じ条件下で試験した。6〜14%の効率が測定された。
〔ステンレス鋼箔層と、MP101 Crystal Coat樹脂から形成されるシリコーン層とを備える基板〕
MP 101 Crystal Coat樹脂をSDC Coating Technologies, Inc.から入手した。この樹脂は31wt.%であった。この樹脂をステンレス鋼箔層に塗布し、コーティングを実施例1で説明したのと同様にして硬化させた。
〔実施例5で作製した基板上のCISをベースとする光起電デバイスの製造および試験〕
実施例5で作製した基板上に実施例3で説明したのと同様にして、CISをベースとする光起電デバイスを製造した。このCISをベースとする光起電デバイスを、実施例3で示した条件と同じ条件下で試験した。6〜9%の効率が測定された。
104 銅インジウム二セレン化物(CIS)をベースとする光起電デバイス
106 基板
108 電磁エネルギー
110 端子
306 シリコーン層
312 金属箔層
502 CISをベースとする光起電デバイス
504 後に形成されるモリブデン層
506 CISをベースとする太陽光吸収体層
508 窓層
510 トップ接点層
512 上面
514 上面
516 上面
518 上面
602 第2のスクライブ
604 第1のスクライブ
606 第3のスクライブ
608 端子
610 電流
612 抵抗充填剤
614 端子
616 三次元上面
Claims (3)
- 銅、インジウムおよびセレンを含む銅インジウム二セレン化物(CIS)をベースとする太陽光吸収体層(506)と、
シリコーン組成物から形成されるシリコーン層(306)と、金属箔層(312)とを備える基板(106)と
を備え、
前記シリコーン組成物が、
[H 2 SiO 2/2 ] x''' [HSiO 3/2 ] y'''
(前記式中、x’’’及びy’’’はモル分率を示し、0.15≦x’’’ ≦1.0、0≦y’’’≦0.85であり、x’’’+y’’’=1である)
のシロキサン単位の式を有するハイドロジェンポリシロキサンを含有するシリコーン樹脂を含む、
銅インジウム二セレン化物(CIS)をベースとする光起電デバイス(104)。 - 前記金属箔層(312)が12.5〜1000μmの厚さを有する、請求項1に記載の銅インジウム二セレン化物をベースとする光起電デバイス(104)。
- 前記シリコーン組成物が、少なくとも1つの物理的寸法が200nm未満であるシリカナノ粒子をさらに含む、請求項1又は2に記載の銅インジウム二セレン化物をベースとする光起電デバイス(104)。
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US60/792,852 | 2006-04-18 | ||
PCT/US2007/009359 WO2007123898A1 (en) | 2006-04-18 | 2007-04-18 | Copper indium diselenide-based photovoltaic device and method of preparing the same |
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US20100236607A1 (en) * | 2008-06-12 | 2010-09-23 | General Electric Company | Monolithically integrated solar modules and methods of manufacture |
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KR102090184B1 (ko) * | 2016-01-13 | 2020-03-18 | 주식회사 메카로에너지 | Cigs 광흡수층을 포함하는 태양전지 및 이의 제조방법 |
KR101956093B1 (ko) * | 2017-01-24 | 2019-06-24 | 울산과학기술원 | 유전체-금속 나노입자 복합체를 포함하는 광 흡수체, 이의 제조방법 및 이를 포함하는 물분해 광전극 |
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DE602007003216D1 (de) | 2009-12-24 |
JP2009534839A (ja) | 2009-09-24 |
EP2018669A1 (en) | 2009-01-28 |
CN102646724A (zh) | 2012-08-22 |
KR20090003334A (ko) | 2009-01-09 |
JP2012069965A (ja) | 2012-04-05 |
WO2007123898A1 (en) | 2007-11-01 |
US20090084428A1 (en) | 2009-04-02 |
ES2335551T3 (es) | 2010-03-29 |
EP2018669B1 (en) | 2009-11-11 |
ATE448569T1 (de) | 2009-11-15 |
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