ATE448569T1 - Fotovoltaische anordnung auf kupfer-indium- diselenidbasis und herstellungsverfahren dafür - Google Patents
Fotovoltaische anordnung auf kupfer-indium- diselenidbasis und herstellungsverfahren dafürInfo
- Publication number
- ATE448569T1 ATE448569T1 AT07755584T AT07755584T ATE448569T1 AT E448569 T1 ATE448569 T1 AT E448569T1 AT 07755584 T AT07755584 T AT 07755584T AT 07755584 T AT07755584 T AT 07755584T AT E448569 T1 ATE448569 T1 AT E448569T1
- Authority
- AT
- Austria
- Prior art keywords
- copper
- indium
- based photovoltaic
- diselenide
- cis
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Silicon Polymers (AREA)
- Photovoltaic Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US79277006P | 2006-04-18 | 2006-04-18 | |
| US79285206P | 2006-04-18 | 2006-04-18 | |
| PCT/US2007/009359 WO2007123898A1 (en) | 2006-04-18 | 2007-04-18 | Copper indium diselenide-based photovoltaic device and method of preparing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE448569T1 true ATE448569T1 (de) | 2009-11-15 |
Family
ID=38434840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07755584T ATE448569T1 (de) | 2006-04-18 | 2007-04-18 | Fotovoltaische anordnung auf kupfer-indium- diselenidbasis und herstellungsverfahren dafür |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20090084428A1 (de) |
| EP (1) | EP2018669B1 (de) |
| JP (2) | JP4933610B2 (de) |
| KR (1) | KR20090003334A (de) |
| CN (1) | CN102646724A (de) |
| AT (1) | ATE448569T1 (de) |
| DE (1) | DE602007003216D1 (de) |
| ES (1) | ES2335551T3 (de) |
| WO (1) | WO2007123898A1 (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8207442B2 (en) | 2006-04-18 | 2012-06-26 | Itn Energy Systems, Inc. | Reinforcing structures for thin-film photovoltaic device substrates, and associated methods |
| WO2008036769A2 (en) | 2006-09-19 | 2008-03-27 | Itn Energy Systems, Inc. | Semi-transparent dual layer back contact for bifacial and tandem junction thin-film photovolataic devices |
| WO2008103419A2 (en) | 2007-02-22 | 2008-08-28 | Dow Corning Corporation | Composite article having excellent fire and impact resistance and method of making the same |
| ES2522582T3 (es) * | 2007-08-31 | 2014-11-17 | Aperam Alloys Imphy | Sustrato metálico texturizado cristalográficamente, dispositivo texturizado cristalográficamente, célula y módulo fotovoltaico que comprenden un dispositivo de este tipo, y procedimiento de depósito de capas finas |
| US20100236607A1 (en) * | 2008-06-12 | 2010-09-23 | General Electric Company | Monolithically integrated solar modules and methods of manufacture |
| US8134069B2 (en) * | 2009-04-13 | 2012-03-13 | Miasole | Method and apparatus for controllable sodium delivery for thin film photovoltaic materials |
| US20110017289A1 (en) * | 2009-07-24 | 2011-01-27 | Electronics And Telecommunications Research Institute | Cigs solar cell and method of fabricating the same |
| JP6586238B2 (ja) * | 2016-01-13 | 2019-10-02 | メカロ カンパニー リミテッドMecaro Co.,Ltd. | Cigs光吸収層を含む太陽電池及びその製造方法 |
| KR101956093B1 (ko) * | 2017-01-24 | 2019-06-24 | 울산과학기술원 | 유전체-금속 나노입자 복합체를 포함하는 광 흡수체, 이의 제조방법 및 이를 포함하는 물분해 광전극 |
Family Cites Families (40)
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| NL131800C (de) * | 1965-05-17 | |||
| DE2709094C2 (de) * | 1977-03-02 | 1984-11-22 | Boehringer Mannheim Gmbh, 6800 Mannheim | Adsorbens für die affinitätsspezifische Trennung von Nukleinsäuren, Verfahren zu seiner Herstellung und seine Verwendung |
| US4087585A (en) * | 1977-05-23 | 1978-05-02 | Dow Corning Corporation | Self-adhering silicone compositions and preparations thereof |
| US4260780A (en) * | 1979-11-27 | 1981-04-07 | The United States Of America As Represented By The Secretary Of The Air Force | Phenylmethylpolysilane polymers and process for their preparation |
| US4276424A (en) * | 1979-12-03 | 1981-06-30 | Petrarch Systems | Methods for the production of organic polysilanes |
| US4314956A (en) * | 1980-07-23 | 1982-02-09 | Dow Corning Corporation | High yield silicon carbide pre-ceramic polymers |
| US4324901A (en) * | 1981-04-29 | 1982-04-13 | Wisconsin Alumni Research Foundation | Soluble polysilastyrene and method for preparation |
| EP0078541B1 (de) * | 1981-11-04 | 1991-01-16 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Biegsame photovoltaische Einrichtung |
| US4530879A (en) * | 1983-03-04 | 1985-07-23 | Minnesota Mining And Manufacturing Company | Radiation activated addition reaction |
| US4510094A (en) * | 1983-12-06 | 1985-04-09 | Minnesota Mining And Manufacturing Company | Platinum complex |
| US4720856A (en) * | 1986-09-02 | 1988-01-19 | Motorola, Inc. | Control circuit having a direct current control loop for controlling the gain of an attenuator |
| US4766176A (en) * | 1987-07-20 | 1988-08-23 | Dow Corning Corporation | Storage stable heat curable organosiloxane compositions containing microencapsulated platinum-containing catalysts |
| JPH0214244A (ja) * | 1988-06-30 | 1990-01-18 | Toray Dow Corning Silicone Co Ltd | 加熱硬化性オルガノポリシロキサン組成物 |
| JP3029680B2 (ja) * | 1991-01-29 | 2000-04-04 | 東レ・ダウコーニング・シリコーン株式会社 | オルガノペンタシロキサンおよびその製造方法 |
| DE4217432A1 (de) * | 1992-05-26 | 1993-12-02 | Inst Neue Mat Gemein Gmbh | Verfahren zur Herstellung von Glas mit verbesserter Langzeitstandfähigkeit bei erhöhten Temperaturen |
| JP3169148B2 (ja) * | 1992-09-30 | 2001-05-21 | 三井化学株式会社 | 防火ガラス |
| US5441897A (en) * | 1993-04-12 | 1995-08-15 | Midwest Research Institute | Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells |
| DE4423195A1 (de) * | 1994-07-01 | 1996-01-04 | Wacker Chemie Gmbh | Triazenoxid-Übergangsmetall-Komplexe als Hydrosilylierungskatalysatoren |
| JP3825843B2 (ja) * | 1996-09-12 | 2006-09-27 | キヤノン株式会社 | 太陽電池モジュール |
| DE69728846T2 (de) * | 1996-12-31 | 2005-04-21 | Dow Corning | Verfahren zur Herstellung von Gummi-modifizierte feste Silikon-Harze und daraus hergestellte Komposite |
| US5985691A (en) | 1997-05-16 | 1999-11-16 | International Solar Electric Technology, Inc. | Method of making compound semiconductor films and making related electronic devices |
| DE19731416C1 (de) * | 1997-07-22 | 1998-09-17 | Vetrotech Saint Gobain Int Ag | Brandschutzverglasung |
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| KR20050004876A (ko) * | 2002-05-27 | 2005-01-12 | 닛토덴코 가부시키가이샤 | 수지 시트, 이것을 사용한 액정 셀 기판 |
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| US8716592B2 (en) * | 2004-07-12 | 2014-05-06 | Quanex Ig Systems, Inc. | Thin film photovoltaic assembly method |
| US7576017B2 (en) * | 2004-11-10 | 2009-08-18 | Daystar Technologies, Inc. | Method and apparatus for forming a thin-film solar cell using a continuous process |
| US8092910B2 (en) * | 2005-02-16 | 2012-01-10 | Dow Corning Toray Co., Ltd. | Reinforced silicone resin film and method of preparing same |
| ATE551398T1 (de) * | 2005-02-16 | 2012-04-15 | Dow Corning | Verstärkte silikonharzfolie und herstellungsverfahren dafür |
| US8207442B2 (en) * | 2006-04-18 | 2012-06-26 | Itn Energy Systems, Inc. | Reinforcing structures for thin-film photovoltaic device substrates, and associated methods |
-
2007
- 2007-04-18 CN CN2012100566284A patent/CN102646724A/zh active Pending
- 2007-04-18 ES ES07755584T patent/ES2335551T3/es active Active
- 2007-04-18 EP EP07755584A patent/EP2018669B1/de not_active Not-in-force
- 2007-04-18 JP JP2009506541A patent/JP4933610B2/ja not_active Expired - Fee Related
- 2007-04-18 AT AT07755584T patent/ATE448569T1/de not_active IP Right Cessation
- 2007-04-18 WO PCT/US2007/009359 patent/WO2007123898A1/en not_active Ceased
- 2007-04-18 DE DE602007003216T patent/DE602007003216D1/de active Active
- 2007-04-18 US US12/297,358 patent/US20090084428A1/en not_active Abandoned
- 2007-04-18 KR KR1020087027938A patent/KR20090003334A/ko not_active Ceased
-
2011
- 2011-10-21 JP JP2011231726A patent/JP2012069965A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE602007003216D1 (de) | 2009-12-24 |
| JP2012069965A (ja) | 2012-04-05 |
| CN102646724A (zh) | 2012-08-22 |
| KR20090003334A (ko) | 2009-01-09 |
| US20090084428A1 (en) | 2009-04-02 |
| JP4933610B2 (ja) | 2012-05-16 |
| ES2335551T3 (es) | 2010-03-29 |
| WO2007123898A1 (en) | 2007-11-01 |
| JP2009534839A (ja) | 2009-09-24 |
| EP2018669B1 (de) | 2009-11-11 |
| EP2018669A1 (de) | 2009-01-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |