ATE448569T1 - Fotovoltaische anordnung auf kupfer-indium- diselenidbasis und herstellungsverfahren dafür - Google Patents

Fotovoltaische anordnung auf kupfer-indium- diselenidbasis und herstellungsverfahren dafür

Info

Publication number
ATE448569T1
ATE448569T1 AT07755584T AT07755584T ATE448569T1 AT E448569 T1 ATE448569 T1 AT E448569T1 AT 07755584 T AT07755584 T AT 07755584T AT 07755584 T AT07755584 T AT 07755584T AT E448569 T1 ATE448569 T1 AT E448569T1
Authority
AT
Austria
Prior art keywords
copper
indium
based photovoltaic
diselenide
cis
Prior art date
Application number
AT07755584T
Other languages
English (en)
Inventor
Thomas Duncan Barnard
Yukinari Harimoto
Hidekatsu Hatanaka
Maki Itoh
Dimitris Elias Katsoulis
Michitaka Suto
Bizhong Zhu
Lawrence M Woods
Joseph H Armstrong
Rosine M Ribelin
Original Assignee
Dow Corning
Itn Energy Systems Inc
Dow Corning Toray Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning, Itn Energy Systems Inc, Dow Corning Toray Co Ltd filed Critical Dow Corning
Application granted granted Critical
Publication of ATE448569T1 publication Critical patent/ATE448569T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/126Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/12Polysiloxanes containing silicon bound to hydrogen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/14Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/20Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Silicon Polymers (AREA)
  • Photovoltaic Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
AT07755584T 2006-04-18 2007-04-18 Fotovoltaische anordnung auf kupfer-indium- diselenidbasis und herstellungsverfahren dafür ATE448569T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US79277006P 2006-04-18 2006-04-18
US79285206P 2006-04-18 2006-04-18
PCT/US2007/009359 WO2007123898A1 (en) 2006-04-18 2007-04-18 Copper indium diselenide-based photovoltaic device and method of preparing the same

Publications (1)

Publication Number Publication Date
ATE448569T1 true ATE448569T1 (de) 2009-11-15

Family

ID=38434840

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07755584T ATE448569T1 (de) 2006-04-18 2007-04-18 Fotovoltaische anordnung auf kupfer-indium- diselenidbasis und herstellungsverfahren dafür

Country Status (9)

Country Link
US (1) US20090084428A1 (de)
EP (1) EP2018669B1 (de)
JP (2) JP4933610B2 (de)
KR (1) KR20090003334A (de)
CN (1) CN102646724A (de)
AT (1) ATE448569T1 (de)
DE (1) DE602007003216D1 (de)
ES (1) ES2335551T3 (de)
WO (1) WO2007123898A1 (de)

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US20100236607A1 (en) * 2008-06-12 2010-09-23 General Electric Company Monolithically integrated solar modules and methods of manufacture
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Also Published As

Publication number Publication date
JP2009534839A (ja) 2009-09-24
ES2335551T3 (es) 2010-03-29
EP2018669B1 (de) 2009-11-11
JP2012069965A (ja) 2012-04-05
DE602007003216D1 (de) 2009-12-24
WO2007123898A1 (en) 2007-11-01
JP4933610B2 (ja) 2012-05-16
EP2018669A1 (de) 2009-01-28
US20090084428A1 (en) 2009-04-02
KR20090003334A (ko) 2009-01-09
CN102646724A (zh) 2012-08-22

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