JP5253380B2 - テルル化カドミウムベース光起電力デバイスおよびその調製方法 - Google Patents
テルル化カドミウムベース光起電力デバイスおよびその調製方法 Download PDFInfo
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- JP5253380B2 JP5253380B2 JP2009506543A JP2009506543A JP5253380B2 JP 5253380 B2 JP5253380 B2 JP 5253380B2 JP 2009506543 A JP2009506543 A JP 2009506543A JP 2009506543 A JP2009506543 A JP 2009506543A JP 5253380 B2 JP5253380 B2 JP 5253380B2
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- silicon
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims description 60
- 238000000034 method Methods 0.000 title description 38
- 238000002360 preparation method Methods 0.000 title description 6
- 229920002050 silicone resin Polymers 0.000 claims description 165
- 229920001296 polysiloxane Polymers 0.000 claims description 147
- 239000000203 mixture Substances 0.000 claims description 132
- -1 polysiloxane Polymers 0.000 claims description 102
- 239000000758 substrate Substances 0.000 claims description 77
- 239000003054 catalyst Substances 0.000 claims description 75
- 239000000835 fiber Substances 0.000 claims description 70
- 238000006459 hydrosilylation reaction Methods 0.000 claims description 64
- 230000002787 reinforcement Effects 0.000 claims description 63
- 239000001257 hydrogen Substances 0.000 claims description 50
- 229910052739 hydrogen Inorganic materials 0.000 claims description 50
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 47
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 41
- 125000003342 alkenyl group Chemical group 0.000 claims description 39
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 31
- 150000003961 organosilicon compounds Chemical class 0.000 claims description 30
- 125000001183 hydrocarbyl group Chemical class 0.000 claims description 23
- 239000011888 foil Substances 0.000 claims description 11
- 125000001931 aliphatic group Chemical group 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 3
- 125000006657 (C1-C10) hydrocarbyl group Chemical group 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 239000011593 sulfur Substances 0.000 claims description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 73
- 229920005989 resin Polymers 0.000 description 67
- 239000011347 resin Substances 0.000 description 67
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 61
- 239000003960 organic solvent Substances 0.000 description 52
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 50
- 238000009833 condensation Methods 0.000 description 48
- 230000005494 condensation Effects 0.000 description 48
- 229920002379 silicone rubber Polymers 0.000 description 40
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 30
- 150000001875 compounds Chemical class 0.000 description 27
- 239000000377 silicon dioxide Substances 0.000 description 25
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 24
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 23
- 239000003431 cross linking reagent Substances 0.000 description 21
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 21
- 125000004122 cyclic group Chemical group 0.000 description 20
- 239000002105 nanoparticle Substances 0.000 description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 18
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- 238000006243 chemical reaction Methods 0.000 description 15
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- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 description 14
- 229910000331 cadmium sulfate Inorganic materials 0.000 description 14
- 230000007062 hydrolysis Effects 0.000 description 14
- 125000004432 carbon atom Chemical group C* 0.000 description 13
- 229910052697 platinum Inorganic materials 0.000 description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 239000004971 Cross linker Substances 0.000 description 12
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 12
- 239000012949 free radical photoinitiator Substances 0.000 description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 11
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000011541 reaction mixture Substances 0.000 description 11
- 125000005375 organosiloxane group Chemical group 0.000 description 10
- 239000003495 polar organic solvent Substances 0.000 description 10
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 150000002431 hydrogen Chemical class 0.000 description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
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- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 9
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 8
- 238000005336 cracking Methods 0.000 description 8
- 150000001451 organic peroxides Chemical class 0.000 description 8
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- 229910000077 silane Inorganic materials 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 7
- 229920001971 elastomer Polymers 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 150000002978 peroxides Chemical class 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- 239000005060 rubber Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000006482 condensation reaction Methods 0.000 description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 6
- 239000002563 ionic surfactant Substances 0.000 description 6
- 239000001272 nitrous oxide Substances 0.000 description 6
- 229920006136 organohydrogenpolysiloxane Polymers 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
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- 229920001721 polyimide Polymers 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 5
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- 229910052783 alkali metal Inorganic materials 0.000 description 5
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- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 5
- 239000005052 trichlorosilane Substances 0.000 description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 4
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 description 4
- UYXTWWCETRIEDR-UHFFFAOYSA-N Tributyrin Chemical compound CCCC(=O)OCC(OC(=O)CCC)COC(=O)CCC UYXTWWCETRIEDR-UHFFFAOYSA-N 0.000 description 4
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- 125000000217 alkyl group Chemical group 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 4
- QARVLSVVCXYDNA-UHFFFAOYSA-N bromobenzene Chemical compound BrC1=CC=CC=C1 QARVLSVVCXYDNA-UHFFFAOYSA-N 0.000 description 4
- 125000001309 chloro group Chemical group Cl* 0.000 description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
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- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 4
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- PYBNTRWJKQJDRE-UHFFFAOYSA-L dodecanoate;tin(2+) Chemical compound [Sn+2].CCCCCCCCCCCC([O-])=O.CCCCCCCCCCCC([O-])=O PYBNTRWJKQJDRE-UHFFFAOYSA-L 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 150000008376 fluorenones Chemical class 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 150000002314 glycerols Chemical class 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 239000012760 heat stabilizer Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- DHGJWSRGFMFRLS-UHFFFAOYSA-N hexa-1,3-dienylbenzene Chemical compound CCC=CC=CC1=CC=CC=C1 DHGJWSRGFMFRLS-UHFFFAOYSA-N 0.000 description 1
- FHKSXSQHXQEMOK-UHFFFAOYSA-N hexane-1,2-diol Chemical compound CCCCC(O)CO FHKSXSQHXQEMOK-UHFFFAOYSA-N 0.000 description 1
- 125000006038 hexenyl group Chemical group 0.000 description 1
- 125000005980 hexynyl group Chemical group 0.000 description 1
- 125000000743 hydrocarbylene group Chemical group 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- CBOIHMRHGLHBPB-UHFFFAOYSA-N hydroxymethyl Chemical compound O[CH2] CBOIHMRHGLHBPB-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- YLHXLHGIAMFFBU-UHFFFAOYSA-N methyl phenylglyoxalate Chemical compound COC(=O)C(=O)C1=CC=CC=C1 YLHXLHGIAMFFBU-UHFFFAOYSA-N 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000004763 nomex Substances 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 125000004365 octenyl group Chemical group C(=CCCCCCC)* 0.000 description 1
- 125000005069 octynyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C#C* 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- IMACFCSSMIZSPP-UHFFFAOYSA-N phenacyl chloride Chemical compound ClCC(=O)C1=CC=CC=C1 IMACFCSSMIZSPP-UHFFFAOYSA-N 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 150000004291 polyenes Chemical class 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000223 polyglycerol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000012763 reinforcing filler Substances 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- KCIKCCHXZMLVDE-UHFFFAOYSA-N silanediol Chemical group O[SiH2]O KCIKCCHXZMLVDE-UHFFFAOYSA-N 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical class ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- GJBRNHKUVLOCEB-UHFFFAOYSA-N tert-butyl benzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1 GJBRNHKUVLOCEB-UHFFFAOYSA-N 0.000 description 1
- SWAXTRYEYUTSAP-UHFFFAOYSA-N tert-butyl ethaneperoxoate Chemical compound CC(=O)OOC(C)(C)C SWAXTRYEYUTSAP-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- AFCAKJKUYFLYFK-UHFFFAOYSA-N tetrabutyltin Chemical compound CCCC[Sn](CCCC)(CCCC)CCCC AFCAKJKUYFLYFK-UHFFFAOYSA-N 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- IUTCEZPPWBHGIX-UHFFFAOYSA-N tin(2+) Chemical compound [Sn+2] IUTCEZPPWBHGIX-UHFFFAOYSA-N 0.000 description 1
- SYRHIZPPCHMRIT-UHFFFAOYSA-N tin(4+) Chemical class [Sn+4] SYRHIZPPCHMRIT-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- AYNNSCRYTDRFCP-UHFFFAOYSA-N triazene Chemical compound NN=N AYNNSCRYTDRFCP-UHFFFAOYSA-N 0.000 description 1
- 150000005671 trienes Chemical class 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- 150000004072 triols Chemical class 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- 150000007964 xanthones Chemical class 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Description
(R1R2 2SiOl/2)w(R2 2SiO2/2)x(R2SiO3/2)y(SiO4/2)z (I)
式中、R1およびR2は上で説明され例示された通りであり、w、x、y、およびzはモル分率である。典型的に、式(I)で表されるシリコーン樹脂は、平均で1分子当たり少なくとも2つのケイ素結合アルケニル基を有する。より具体的には、下付き文字wは、典型的に0〜0.9、あるいは0.02〜0.75、あるいは0.05〜0.3の値を有する。下付き文字xは、典型的に0〜0.9、あるいは0〜0.45、あるいは0〜0.25の値を有する。下付き文字yは、典型的に0〜0.99、あるいは0.25〜0.8、あるいは0.5〜0.8の値を有する。下付き文字zは、典型的に0〜0.85、あるいは0〜0.25、あるいは0〜0.15の値を有する。同様に、比率y+z/(w+x+y+z)は、典型的に0.1〜0.99、あるいは0.5〜0.95、あるいは0.65〜0.9である。さらに、比率w+x/(w+x+y+z)は、典型的に0.01〜0.90、あるいは0.05〜0.5、あるいは0.1〜0.35である。
(Vi2MeSiO1/2)0.25(PhSiO3/2)0.75、(ViMe2SiO1/2)0.25(PhSiO3/2)0.75、(ViMe2SiO1/2)0.25(MeSiO3/2)0.25(PhSiO3/2)0.50、
(ViMe2SiO1/2)0.15(PhSiO3/2)0.75(SiO4/2)0.1、および
(Vi2MeSiOl/2)0.15(ViMe2SiO1/2)0.1(PhSiO3/2)0.75を有する樹脂が含まれる。
式中、Meはメチルであり、Viはビニルであり、Phはフェニルであり、カッコの外の下付き数値は、上述の式(I)に関して記述されたw、x、y、またはzに相当するモル分率を意味する。前述の式における単位の順序は、決して本発明の範囲を制限するものと見なしてはならない。
(HMe2SiO1/2)0.25(PhSiO3/2)0.75、(HMeSiO2/2)0.3(PhSiO3/2)0.6(MeSiO3/2)0.1、および(Me3SiO1/2)0.1(H2SiO2/2)0.1(MeSiO3/2)0.4(PhSiO3/2)0.4を有する樹脂が含まれる。
式中、Meはメチルであり、Phはフェニルであり、カッコの外の下付き数値はモル分率を意味する。前述の式における単位の順序は、決して本発明の範囲を制限すると見なしてはならない。
Vi4Si、PhSiVi3、MeSiVi3、PhMeSiVi2、Ph2SiVi2、およびPhSi(CH2CH=CH2)3(式中、Meはメチルであり、Phはフェニルであり、Viはビニルである)を有するシランが含まれる。
HR1 2Si−R3−SiR1 2H (III)
式中、R1は上で定義し例示した通りであり、R3は、脂肪族不飽和を含まず、以下の構造から選択される式を有するヒドロカルビレン基である。
PhSi(OSiMe2H)3、Si(OSiMe2H)4、MeSi(OSiMe2H)3、およびPh2Si(OSiMe2H)2、(式中、Meはメチルであり、Phはフェニルである。)
−CH2CH2SiMe2CnH2nSiMe2H、−CH2CH2SiMe2CnH2nSiMePhH、
−CH2CH2SiMePhH、−CH2CH2SiPh2H、−CH2CH2SiMePhCnH2nSiPh2H、
−CH2CH2SiMePhCnH2nSiMe2H、−CH2CH2SiMePhOSiMePhH、および
−CH2CH2SiMePhOSiPh(OSiMePhH)2
式中、Meはメチルであり、Phはフェニルであり、下付き文字nは、2〜10の値を有する。有機ハイドロジェンポリシロキサン樹脂中のR4によって表される基の典型的に少なくとも50モル%、あるいは少なくとも65モル%、あるいは少なくとも80モル%が、少なくとも1つのケイ素結合水素原子を有するオルガノシリルアルキル基である。本明細書で使用する場合、R4中のオルガノシリルアルキル基のモル%は、シリコーン樹脂中のケイ素結合オルガノシリルアルキル基のモル数の、樹脂中のR4基の総モル数に対する比に100を乗じたものと定義される。
(R1R4 2SiO1/2)w(R4 2SiO2/2)x(R4SiO3/2)y(SiO4/2)z (IV)
式中、R1、R4、w、x、y、およびzは、それぞれ上で定義し例示した通りである。
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.12(PhSiO3/2)0.88、
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.17(PhSiO3/2)0.83、
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.17(MeSiO3/2)0.17(PhSiO3/2)0.66、
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.15(PhSiO3/2)0.75(SiO4/2)0.10、および((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.08((HMe2SiC6H4SiMe2CH2CH2)Me2SiO1/2)0.06(PhSiO3/2)0.86、
式中、Meはメチルであり、Phはフェニルであり、C6H4はパラフェニレン基を意味し、カッコ外の下付き数値はモル分率を意味する。前述の式における単位の順序は、決して本発明の範囲を制限するものと見なしてはならない。
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.12(PhSiO3/2)0.88、
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.17(PhSiO3/2)0.83、
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.17(MeSiO3/2)0.17(PhSiO3/2)0.66、((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.15(PhSiO3/2)0.75(SiO4/2)0.10、および((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.08((HMe2SiC6H4SiMe2CH2CH2)Me2SiO1/2)0.06(PhSiO3/2)0.86、
式中、Meはメチルであり、Phはフェニルであり、C6H4はパラフェニレン基を意味し、カッコ外の下付き数値はモル分率を意味する。前述の式における単位の順序は、決して本発明の範囲を制限するものと見なしてはならない。
媒または2つ以上の異なる光活性ヒドロシリル化触媒からなる混合物とすることができる。
ViMe2SiO(Me2SiO)aSiMe2Vi、ViMe2SiO(Ph2SiO)aSiMe2Vi、および
ViMe2SiO(PhMeSiO)aSiMe2Vi、
式中、Meはメチルであり、Phはフェニルであり、Viはビニルであり、および下付き文字aは1から4の値を有する。シリコーンゴム(D)(i)は、単一シリコーンゴムまたはそれぞれが(D)(i)のための式を満足する2つ以上の異なるシリコーンゴムを含む混合物とすることができる。
HMe2SiO(Me2SiO)bSiMe2H、HMe2SiO(Ph2SiO)bSiMe2H、HMe2SiO(PhMeSiO)bSiMe2H、およびHMe2SiO(Ph2SiO)2(Me2SiO)2SiMe2H、
式中、Meはメチルであり、Phはフェニルであり、および下付き文字bは1から4の値を有する。成分(D)(ii)は、単一シリコーンゴムまたはそれぞれが(D)(ii)のための式を満足する2つ以上の異なるシリコーンゴムを含む混合物とすることができる。
R5R1 2SiO(RlR5SiO)cSiR1 2R5、および
R1R2 2SiO(R2 2SiO)dSiR2 2R1
[式中、R1およびR5は、上で定義し例示した通りであり、cおよびdは、ヒドロシリル化触媒(c)および場合により有機溶媒の存在下、それぞれ4〜1000、あるいは10〜500、あるいは10〜50の値を有する。但し、シリコーン樹脂(A)は1分子当たり平均で少なくとも2つのケイ素結合アルケニル基を有し、シリコーンゴム(D)(iii)は1分子当たり平均で少なくとも2つのケイ素結合水素原子を有し、シリコーンゴム(D)(iii)中のケイ素結合水素原子のシリコーン樹脂(A)中のケイ素結合アルケニル基に対するモル比は、0.01〜0.5である]
を有するゴムから選択される少なくとも1つのシリコーンゴム(D)(iii)の反応によって調製したゴム改質シリコーン樹脂(A1)を含む。「少なくとも1つのシリコーンゴム」は、式によって表されるゴムの1つだけが(D)(iii)のために必要であり、式によって表されるゴムの組合せを使用することもできることを意味する。有機溶媒が存在する場合、ゴム改質シリコーン樹脂(Al)は、沈殿物や懸濁物を形成することなく有機溶媒中に混合可能である。
(R1R6 2SiO1/2)w’(R6 2SiO2/2)x’(R6SiO3/2)y’(SiO4/2)z’ (V)
式中、R1およびR6は上で定義し例示した通りであり、w’は0〜0.8、あるいは0.02〜0.75、あるいは0.05〜0.3であり、x’は0〜0.95、あるいは0.05〜0.8、あるいは0.1〜0.3であり、y’は0〜1、あるいは0.25〜0.8、あるいは0.5〜0.8であり、z’は0〜0.99、あるいは0.2〜0.8、あるいは0.4〜0.6である。シリコーン樹脂(A2)は、1分子当たり平均で少なくとも2個のケイ素結合水素原子、ヒドロキシ基、または加水分解可能基を有する。本明細書で使用する場合、「加水分解可能基」は、触媒無しで室温(約23±2℃)〜100℃の任意の温度において数分間以内、例えば30分間以内に水と反応して、シラノール(Si−OH)基を生成するケイ素結合基を意味する。R6によって表される加水分解可能基の例には、それだけに限定されないが、−Cl、−Br、−OR7、−OCH2CH2OR7、CH3C(=O)O−、Et(Me)C=N−O−、CH3C(=O)N(CH3)−、および−ONH2が含まれる。式中、R7はC1〜C8ヒドロカルビルまたはC1〜C8ハロゲン置換ヒドロカルビルである。
(MeSiO3/2)0.9(Me(HO)SiO2/2)0.1、(PhSiO3/2)0.7(Ph(MeO)SiO2/2)0.3、
(Me3SiO1/2)0.8(SiO4/2)0.15(HOSiO3/2)0.05、
(MeSiO3/2)0.67(PhSiO3/2)0.23(Ph(HO)SiO2/2)0.1、
(MeSiO3/2)0.45(PhSiO3/2)0.24(Pb(HO)SiO2/2)0.16(Ph2SiO2/2)0.1(PhMeSiO2/2)0.05、
(PhSiO3/2)0.3(Ph(HO)SiO2/2)0.1(MeSiO3/2)0.4(Me(HO)SiO2/2)0.05(PhSiO3/2)0.1(PhMeSiO2/2)0.05、および
(PhSiO3/2)0.3(Ph(MeO)SiO2/2)0.1(MeSiO3/2)0.1(PhMeSiO2/2)0.5、
式中、Meはメチルであり、Phはフェニルであり、カッコの外側の数値はモル分率を意味し、下付き文字nは、シリコーン樹脂が典型的に500〜50,000の数平均分子量を有する様な値を有する。前述の式における単位の順序は、決して本発明の範囲を制限するものと見なしてはならない。
(Me(MeO)Si2/2)x’(MeSiO3/2)y’、
(Ph(HO)SiO2/2)x’(PhSiO3/2)y’、
(Me3SiO1/2)w’(CH3COOSiO3/2)y’(SiO4/2)z’、
(Ph(MeO)SiO2/2)x’(MeSiO3/2)y’(PhSiO3/2)y’、
(Ph(MeO)(HO)SiO1/2)w’(MeSiO3/2)y’(PhSiO3/2)y’(Ph2SiO2/2)x’(PhMeSiO2/2)x’、
(PhMe(MeO)SiO1/2)w’(Ph(HO)SiO2/2)x’(MeSiO3/2)y’(PhSiO3/2)y’(PhMeSiO2/2)x’、および(Ph(HO)SiO2/2)x’(PhSiO3/2)y’(MeSiO3/2)y’(PhMeSiO2/2)x’、
式中、Meはメチルであり、Phはフェニルであり、w’、x’、y’、およびz’は上で定義した通りであり、下付き文字y’は、シリコーン樹脂が500〜50,000の数平均分子量を有する様な値を有する。前述の式における単位の順序は、決して本発明の範囲を制限するものと見なしてはならない。
(Me(MeO)Si2/2)0.05(Me3SiO1/2)0.75(SiO4/2)0.2、
(Ph(HO)SiO2/2)0.09(MeSiO3/2)0.67(PhSiO3/2)0.24、
(Ph(MeO)SiO2/2)0.05(MeSiO3/2)0.45(PhSiO3/2)0.35(Ph2SiO2/2)0.1(PhMeSiO2/2)0.05、
(PhMe(MeO)SiOl/2)0.02(PhSiO3/2)0.4(MeSiO3/2)0.45(PhSiO3/2)0.1(PhMeSiO2/2)0.03、および
(Ph(HO)SiO2/2)0.04(PhMe(MeO)SiO1/2)0.03(PhSiO3/2)0.36(MeSiO3/2)0.1(PhMeSiO2/2)0.47、
式中、Meはメチルであり、Phはフェニルであり、カッコ外の下付き文字の数値はモル分率を意味する。前述の式における単位の順序は、決して本発明の範囲を制限するものと見なしてはならない。
(Me(MeO)Si2/2)x’(MeSiO3/2)y’、(Ph(HO)SiO2/2)x’(PhSiO3/2)y’、
(Ph(MeO)SiO2/2)x’(PhSiO3/2)y’(MeSiO3/2)y’(PhSiO3/2)y’(PhMeSiO2/2)x’、および
(CH3COOSiO3/2)y’(PhSiO3/2)y’(SiO4/2)z’(Me2SiO2/2)x’(Ph2SiO2/2)x’、
式中、Meはメチルであり、Phはフェニルであり、x’、y’、およびz’は上で定義した通りであり、下付き文字y’は、シリコーン樹脂が、500〜50,000の数平均分子量を有する様な数値である。前述の式における単位の順序は、決して本発明の範囲を制限するものと見なしてはならない。
(Ph(HO)SiO2/2)0.03(PhSiO3/2)0.37(MeSiO3/2)0.45(PhSiO3/2)0.1(PhMeSiO2/2)0.05および
(CH3COOSiO3/2)0.06(PhSiO3/2)0.3(SiO4/2)0.04(Me2SiO2/2)0.2(Ph2SiO2/2)0.4、
式中、Meはメチルであり、Phはフェニルであり、カッコ外の下付き文字の数値はモル分率を表す。前述の式における単位の順序は、決して本発明の範囲を制限するものと見なしてはならない。シリコーン樹脂(i)は、単一のシリコーン樹脂またはそれぞれが特定の式を有する2つ以上の異なるシリコーン樹脂を含有する混合物とすることができる。
(EtO)3SiO(Me2SiO)55Si(OEt)3、(EtO)3SiO(Me2SiO)16Si(OEt)3、
(EtO)3SiO(Me2SiO)386Si(OEt)3、および(EtO)2MeSiO(PhMeSiO)10SiMe(OEt)2、
式中、Meはメチルであり、Etはエチルである。
(式中、R1は上で定義し例示した通りであり、R9は、R1、アルケニル、またはアルキニルであり、w’’は0〜0.99であり、x’’は0〜0.99であり、y’’は0〜0.99であり、z’’は0〜0.85であり、w’’+x’’+y’’+z’’=1である)を有することもできる。
(Vi2MeSiO1/2)0.25(PhSiO3/2)0.75、(ViMe2SiO1/2)0.25(PhSiO3/2)0.75、(ViMe2SiO1/2)0.25(MeSiO3/2)0.25(PhSiO3/2)0.50、(ViMe2SiO1/2)0.15(PhSiO3/2)0.75(SiO4/2)0.1、および(Vi2MeSiO1/2)0.15(ViMe2SiO1/2)0.1(PhSiO3/2)0.75、
式中、Meはメチルであり、Viはビニルであり、Phはフェニルであり、カッコ外の下付き文字の数値はモル分率を意味する。前述の式における単位の順序は、決して本発明の範囲を制限するものと見なしてはならない。
PhSi(OSiMe2Vi)3、Si(OSiMe2Vi)4、MeSi(OSiMe2Vi)3、およびPh2Si(OSiMe2Vi)2、式中、Meはメチルであり、Viはビニルであり、Phはフェニルである。
約75マイクロメートル厚さの、SDC Coating Technologies、Inc,からのCrystal Coat MP101樹脂を1マイクロメートル厚に被覆した0−3015シリコーン樹脂を含むシリコーン組成物から形成されたガラス繊維強化基板を、3.5’’×3.5’’の四角い形状のオープンフレーム上に据えつけた。基板を有するこのフレームを、堆積チャンバー中に設置し、200nmのZnO:Al層を、250℃、および10−5トールのアルゴン雰囲気において基板上にRFスパッタリング被覆した。被覆した基板をチャンバーから取り出して一旦冷却した。ZnO:Alフィルムの導電性をチェックし、被覆した基板を別個のチャンバー中に設置した。温度を150℃に上昇させ、圧力をアルゴン雰囲気の状態で10−5トールに低下させた。20nm厚さのCdS層を、CdSターゲットからZnO:Al層上にマグネトロンスパッタした。次いで1マイクロメートル厚さのCdTe層も、同様にCdTeターゲットからCdSの上部にスパッタした。冷却したスタックは、一旦チャンバーから取り出し、396℃において15分間、空気雰囲気下CdCl2を用いて処理した。この処理段階の後、150nm厚さのCuラウンドドットをCdTe層の上部にスパッタした。20nm厚さのAu層を、最終的にCuドットの上部上に設置し、光起電力デバイスを完成した。光起電力デバイスを、AM1.5照明条件で、基板を通して来る入射光線を用いて測定した。光起電力デバイスのピーク効率は3.55%であり、開路電圧は0.718Vであり、短路回路電流は17.277mA/cm2であり、形状因子は28.632%であった。
約50マイクロメートル厚さの、TMe/SiO2シリコーン樹脂を含むシリコーン組成物から形成されたガラス繊維強化基板を、3.5’’×3.5’’の四角い形状のオープンフレーム上に据えつけた。フィルムを有するこのフレームを、堆積チャンバー中に設置し、250℃において200nmMo層をフィルム上にスパッタした。被覆したフィルムをチャンバーから取り出して一旦冷却した。これを別個のチャンバー中に設置し、温度を150℃に上昇させ、圧力をアルゴン雰囲気の状態で10−5トールに低下させた。1マイクロメートル厚さのCdTe層をCdTeターゲットからMo層上にマグネトロンスパッタした。次いで20nm厚さのCdS層を、CdSターゲットからCdTeの上部上に同様にスパッタした。冷却し被覆した基板106は、一旦チャンバーから取り出し、396℃において15分間、空気雰囲気下CdCl2を用いて処理した。この処理段階の後、200nm厚さのZnO:Al層をCdS層上にRFスパッタした。次いで150nm厚さのCuラウンドドットをZnO:Al層の上部にスパッタした。20nm厚さのAu層を、最終的にCuドットの上部上に設置し、光起電力デバイス104を完成した。光起電力デバイス104を、AM1.5照明条件で、基板106を通して来る入射光線を用いて測定した。光起電力デバイス104のピーク効率は4.75%であり、開路電圧は0.599Vであり、短路回路電流は17.671mA/cm2であり、形状因子は44.649%であった。
104 デバイス
106 基板
108 光
110 端子
302 繊維強化材
304 シリコーン組成物
306 シリコーン層
312 金属箔層
504 モリブデン(Mo)
506 CdTe層
508 バッファー層
510 上部接触層
Claims (5)
- カドミウムおよびテルル化物を含むCdTe層、および
シリコーン組成物から形成されたシリコーン層(306)と、任意に金属箔層とからなる基板(106)を含み、
前記シリコーン層(306)が繊維強化材をさらに含む、
テルル化カドミウム(CdTe)ベース光起電力デバイス(104)であって、
前記シリコーン組成物が、
(A)R2SiO3/2単位および/またはSiO4/2単位をR1R2 2SiO1/2単位および/またはR2 2SiO2/2単位と組み合わせて含むシリコーン樹脂、ここでR1はC1〜C10ヒドロカルビル基またはC1〜C10ハロゲン置換ヒドロカルビル基であり、両方共脂肪族不飽和を含まず、R2は、R1、アルケニル基、または水素であり、
(B)1分子当たり平均で少なくとも2つのケイ素結合水素原子、またはケイ素結合アルケニル基を有する有機ケイ素化合物、ただしシリコーン樹脂がケイ素結合アルケニル基を含むとき、有機ケイ素化合物は1分子あたりの平均数が少なくとも2つのケイ素結合水素原子を有し、シリコーン樹脂がケイ素結合水素原子を含むとき、有機ケイ素化合物は1分子あたりの平均数が少なくとも2つのケイ素結合アルケニル基を有する、
(C)ヒドロシリル化触媒、
を含むヒドロシリル化硬化性シリコーン組成物としてさらに定義されるデバイス。 - 前記シリコーン組成物が、[H2SiO2/2]x’’’[HSiO3/2]y’’’[SiO4/2]z’’’[式中、x’’’、y’’’、およびz’’’は、0.12≦x’’’<1.0、0≦y’’’≦0.88、0≦z’’’≦0.30のモル分率を表し、y’’’およびz’’’は同時に0ではなく、x’’’+y’’’+z’’’=1である]
のシロキサン単位式を有するハイドロジェンポリシロキサンを含む、請求項1に記載のテルル化カドミウムベース光起電力デバイス(104)。 - 前記シリコーン層(306)がナノ充填材をさらに含む、請求項1又は2に記載のテルル化カドミウムベース光起電力デバイス(104)。
- 前記CdTe層が、ガリウム、アルミニウム、ホウ素、硫黄、およびこれらの組合せの群から選択される金属をさらに含む、請求項1から3の何れか一項に記載のテルル化カドミウムベース光起電力デバイス(104)。
- 請求項1から4の何れか一項に記載の前記テルル化カドミウムベース光起電力デバイス(104)を複数含む配列(102)。
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US79277306P | 2006-04-18 | 2006-04-18 | |
US60/792,773 | 2006-04-18 | ||
PCT/US2007/009364 WO2007120905A2 (en) | 2006-04-18 | 2007-04-18 | Cadmium telluride-based photovoltaic device and method of preparing the same |
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US (1) | US20090090413A1 (ja) |
EP (2) | EP2016626A2 (ja) |
JP (2) | JP5253380B2 (ja) |
KR (1) | KR20080112381A (ja) |
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- 2007-04-18 JP JP2009506543A patent/JP5253380B2/ja not_active Expired - Fee Related
- 2007-04-18 EP EP07775581A patent/EP2016626A2/en not_active Withdrawn
- 2007-04-18 WO PCT/US2007/009364 patent/WO2007120905A2/en active Application Filing
- 2007-04-18 KR KR1020087027941A patent/KR20080112381A/ko not_active Application Discontinuation
- 2007-04-18 CN CNA2007800220090A patent/CN101467263A/zh active Pending
- 2007-04-18 EP EP11160292.6A patent/EP2333841A3/en not_active Withdrawn
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JP2009534840A (ja) | 2009-09-24 |
EP2333841A2 (en) | 2011-06-15 |
CN101467263A (zh) | 2009-06-24 |
US20090090413A1 (en) | 2009-04-09 |
JP2013080943A (ja) | 2013-05-02 |
WO2007120905A2 (en) | 2007-10-25 |
EP2333841A3 (en) | 2013-06-05 |
EP2016626A2 (en) | 2009-01-21 |
KR20080112381A (ko) | 2008-12-24 |
WO2007120905A3 (en) | 2008-04-17 |
WO2007120905A9 (en) | 2007-12-13 |
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