CN101490860B - 带有波长转换材料的光电子半导体芯片和带有这种半导体芯片的半导体器件以及用于制造光电子半导体芯片的方法 - Google Patents

带有波长转换材料的光电子半导体芯片和带有这种半导体芯片的半导体器件以及用于制造光电子半导体芯片的方法 Download PDF

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Publication number
CN101490860B
CN101490860B CN2007800276081A CN200780027608A CN101490860B CN 101490860 B CN101490860 B CN 101490860B CN 2007800276081 A CN2007800276081 A CN 2007800276081A CN 200780027608 A CN200780027608 A CN 200780027608A CN 101490860 B CN101490860 B CN 101490860B
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wavelength
radiation
converting
layer
semiconductor chip
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Expired - Fee Related
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CN101490860A (zh
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D·伯本
F·杰曼
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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CN2007800276081A 2006-05-23 2007-05-18 带有波长转换材料的光电子半导体芯片和带有这种半导体芯片的半导体器件以及用于制造光电子半导体芯片的方法 Expired - Fee Related CN101490860B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006024165A DE102006024165A1 (de) 2006-05-23 2006-05-23 Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips
DE102006024165.7 2006-05-23
PCT/DE2007/000898 WO2007134582A1 (de) 2006-05-23 2007-05-18 Optoelektronischer halbleiterchip mit einem wellenlängenkonversionsstoff sowie optoelektronisches halbleiterbauelement mit einem solchen halbleiterchip und verfahren zur herstellung des optoelektronischen halbleiterchips

Publications (2)

Publication Number Publication Date
CN101490860A CN101490860A (zh) 2009-07-22
CN101490860B true CN101490860B (zh) 2011-08-31

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CN2007800276081A Expired - Fee Related CN101490860B (zh) 2006-05-23 2007-05-18 带有波长转换材料的光电子半导体芯片和带有这种半导体芯片的半导体器件以及用于制造光电子半导体芯片的方法

Country Status (8)

Country Link
US (1) US7982233B2 (enExample)
EP (1) EP2020038B1 (enExample)
JP (1) JP2009537996A (enExample)
KR (1) KR20090015987A (enExample)
CN (1) CN101490860B (enExample)
DE (1) DE102006024165A1 (enExample)
TW (1) TWI390765B (enExample)
WO (1) WO2007134582A1 (enExample)

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JP5762044B2 (ja) * 2011-02-23 2015-08-12 三菱電機株式会社 発光装置及び発光装置群及び製造方法
DE102011111980A1 (de) 2011-08-29 2013-02-28 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Leuchtdiode und Leuchtdiode
DE102012202927B4 (de) 2012-02-27 2021-06-10 Osram Gmbh Lichtquelle mit led-chip und leuchtstoffschicht
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CN102709280A (zh) * 2012-05-29 2012-10-03 宁波升谱光电半导体有限公司 一种cob集成光源模块
DE102012108704A1 (de) * 2012-09-17 2014-03-20 Osram Opto Semiconductors Gmbh Verfahren zur Fixierung einer matrixfreien elektrophoretisch abgeschiedenen Schicht auf einem Halbleiterchip und strahlungsemittierendes Halbleiterbauelement
KR20140038692A (ko) * 2012-09-21 2014-03-31 포항공과대학교 산학협력단 색변환 엘리먼트 및 그 제조방법
CN103852613B (zh) * 2012-11-29 2016-08-10 沈阳工业大学 一种辐射电流传感方法及专用传感器
DE102013205179A1 (de) 2013-03-25 2014-09-25 Osram Gmbh Verfahren zum Herstellen einer elektromagnetische Strahlung emittierenden Baugruppe und elektromagnetische Strahlung emittierende Baugruppe
DE102013207226A1 (de) * 2013-04-22 2014-10-23 Osram Opto Semiconductors Gmbh Herstellung eines Schichtelements für einen optoelektronischen Halbleiterchip
JP2015002182A (ja) * 2013-06-13 2015-01-05 日立アプライアンス株式会社 照明装置
TW201503421A (zh) * 2013-07-15 2015-01-16 Ind Tech Res Inst 發光二極體晶粒
DE102013214896B4 (de) * 2013-07-30 2021-09-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Konverterelements und eines optoelektronischen Bauelements, Konverterelement und optoelektronisches Bauelement
JP2015099911A (ja) * 2013-10-18 2015-05-28 株式会社エルム 蛍光体分離構造を備えた蛍光体含有フィルムおよびその製造方法
JP2015115480A (ja) * 2013-12-12 2015-06-22 株式会社エルム 発光装置及びその製造方法
DE102013114466A1 (de) * 2013-12-19 2015-06-25 Osram Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
WO2015170814A1 (en) * 2014-05-09 2015-11-12 Lg Electronics Inc. Apparatus of light source for display and apparatus of display using the same
JP2016062899A (ja) * 2014-09-12 2016-04-25 株式会社東芝 半導体発光装置
KR101632291B1 (ko) * 2014-12-11 2016-06-21 전남대학교산학협력단 고효율 형광체플레이트 및 상기 형광체플레이트를 포함하는 led 응용제품
DE102015103835A1 (de) * 2015-03-16 2016-09-22 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement und Verfahren zur Herstellung eines lichtemittierenden Bauelements
CN104868026B (zh) * 2015-05-22 2019-02-22 深圳市华星光电技术有限公司 量子点发光元件
KR102140826B1 (ko) * 2016-06-13 2020-08-04 전남대학교산학협력단 고효율 형광체플레이트 및 상기 형광체플레이트의 제조방법
CN107611232B (zh) * 2017-08-21 2019-02-05 天津三安光电有限公司 发光二极管及其制作方法
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Also Published As

Publication number Publication date
EP2020038B1 (de) 2017-07-05
KR20090015987A (ko) 2009-02-12
EP2020038A1 (de) 2009-02-04
US7982233B2 (en) 2011-07-19
TW200802994A (en) 2008-01-01
US20090272998A1 (en) 2009-11-05
CN101490860A (zh) 2009-07-22
WO2007134582A1 (de) 2007-11-29
DE102006024165A1 (de) 2007-11-29
JP2009537996A (ja) 2009-10-29
TWI390765B (zh) 2013-03-21

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