KR20090015987A - 파장 변환 물질을 포함하는 광전자 반도체칩, 상기와 같은 반도체칩을 포함하는 광전자 반도체 소자 및 상기 광전자 반도체칩의 제조 방법 - Google Patents

파장 변환 물질을 포함하는 광전자 반도체칩, 상기와 같은 반도체칩을 포함하는 광전자 반도체 소자 및 상기 광전자 반도체칩의 제조 방법 Download PDF

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Publication number
KR20090015987A
KR20090015987A KR1020087031270A KR20087031270A KR20090015987A KR 20090015987 A KR20090015987 A KR 20090015987A KR 1020087031270 A KR1020087031270 A KR 1020087031270A KR 20087031270 A KR20087031270 A KR 20087031270A KR 20090015987 A KR20090015987 A KR 20090015987A
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South Korea
Prior art keywords
wavelength
region
wavelength converting
radiation
semiconductor chip
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Ceased
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KR1020087031270A
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English (en)
Korean (ko)
Inventor
더크 벌벤
프랭크 예만
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20090015987A publication Critical patent/KR20090015987A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020087031270A 2006-05-23 2007-05-18 파장 변환 물질을 포함하는 광전자 반도체칩, 상기와 같은 반도체칩을 포함하는 광전자 반도체 소자 및 상기 광전자 반도체칩의 제조 방법 Ceased KR20090015987A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006024165A DE102006024165A1 (de) 2006-05-23 2006-05-23 Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips
DE102006024165.7 2006-05-23

Publications (1)

Publication Number Publication Date
KR20090015987A true KR20090015987A (ko) 2009-02-12

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KR1020087031270A Ceased KR20090015987A (ko) 2006-05-23 2007-05-18 파장 변환 물질을 포함하는 광전자 반도체칩, 상기와 같은 반도체칩을 포함하는 광전자 반도체 소자 및 상기 광전자 반도체칩의 제조 방법

Country Status (8)

Country Link
US (1) US7982233B2 (enExample)
EP (1) EP2020038B1 (enExample)
JP (1) JP2009537996A (enExample)
KR (1) KR20090015987A (enExample)
CN (1) CN101490860B (enExample)
DE (1) DE102006024165A1 (enExample)
TW (1) TWI390765B (enExample)
WO (1) WO2007134582A1 (enExample)

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KR20110108147A (ko) * 2010-03-26 2011-10-05 엘지이노텍 주식회사 발광소자 패키지 및 이를 구비한 라이트 유닛
KR101221870B1 (ko) * 2009-04-17 2013-01-15 한국전자통신연구원 태양 전지
KR20150136512A (ko) * 2013-03-25 2015-12-07 오스람 옵토 세미컨덕터스 게엠베하 전자기 방사선을 방출하는 어셈블리의 제조 방법 및 전자기 방사선을 방출하는 어셈블리
KR101632291B1 (ko) * 2014-12-11 2016-06-21 전남대학교산학협력단 고효율 형광체플레이트 및 상기 형광체플레이트를 포함하는 led 응용제품
KR20160072837A (ko) * 2016-06-13 2016-06-23 전남대학교산학협력단 고효율 형광체플레이트 및 상기 형광체플레이트의 제조방법
US10533729B2 (en) 2012-02-27 2020-01-14 Osram Gmbh Light source with LED chip and luminophore layer

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WO2010074987A2 (en) * 2008-12-24 2010-07-01 3M Innovative Properties Company Light generating device having double-sided wavelength converter
EP2380217A2 (en) 2008-12-24 2011-10-26 3M Innovative Properties Company Method of making double-sided wavelength converter and light generating device using same
DE102009005907A1 (de) * 2009-01-23 2010-07-29 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
KR100993045B1 (ko) * 2009-10-23 2010-11-08 엘지이노텍 주식회사 발광소자 칩 및 발광소자 패키지
JP5662939B2 (ja) * 2009-05-22 2015-02-04 パナソニックＩｐマネジメント株式会社 半導体発光装置及びそれを用いた光源装置
US20110062468A1 (en) * 2009-09-11 2011-03-17 Koninklijke Philips Electronics N.V. Phosphor-converted light emitting diode device
CN102270732B (zh) * 2010-06-03 2015-06-10 展晶科技(深圳)有限公司 荧光层结构及其形成方法以及发光二极管封装结构
JP5635832B2 (ja) * 2010-08-05 2014-12-03 スタンレー電気株式会社 半導体発光装置
WO2012042452A2 (en) 2010-09-29 2012-04-05 Koninklijke Philips Electronics N.V. Wavelength converted light emitting device
JP2013541220A (ja) * 2010-10-27 2013-11-07 コーニンクレッカ フィリップス エヌ ヴェ 発光デバイスの製造用のラミネート支持フィルム、及びその製造方法
TWI474520B (zh) * 2010-11-29 2015-02-21 Epistar Corp 發光裝置、混光裝置及其製造方法
JP5762044B2 (ja) * 2011-02-23 2015-08-12 三菱電機株式会社 発光装置及び発光装置群及び製造方法
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DE102012108704A1 (de) * 2012-09-17 2014-03-20 Osram Opto Semiconductors Gmbh Verfahren zur Fixierung einer matrixfreien elektrophoretisch abgeschiedenen Schicht auf einem Halbleiterchip und strahlungsemittierendes Halbleiterbauelement
KR20140038692A (ko) * 2012-09-21 2014-03-31 포항공과대학교 산학협력단 색변환 엘리먼트 및 그 제조방법
CN103852613B (zh) * 2012-11-29 2016-08-10 沈阳工业大学 一种辐射电流传感方法及专用传感器
DE102013207226A1 (de) * 2013-04-22 2014-10-23 Osram Opto Semiconductors Gmbh Herstellung eines Schichtelements für einen optoelektronischen Halbleiterchip
JP2015002182A (ja) * 2013-06-13 2015-01-05 日立アプライアンス株式会社 照明装置
TW201503421A (zh) * 2013-07-15 2015-01-16 Ind Tech Res Inst 發光二極體晶粒
DE102013214896B4 (de) * 2013-07-30 2021-09-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Konverterelements und eines optoelektronischen Bauelements, Konverterelement und optoelektronisches Bauelement
JP2015099911A (ja) * 2013-10-18 2015-05-28 株式会社エルム 蛍光体分離構造を備えた蛍光体含有フィルムおよびその製造方法
JP2015115480A (ja) * 2013-12-12 2015-06-22 株式会社エルム 発光装置及びその製造方法
DE102013114466A1 (de) * 2013-12-19 2015-06-25 Osram Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
WO2015170814A1 (en) * 2014-05-09 2015-11-12 Lg Electronics Inc. Apparatus of light source for display and apparatus of display using the same
JP2016062899A (ja) * 2014-09-12 2016-04-25 株式会社東芝 半導体発光装置
DE102015103835A1 (de) * 2015-03-16 2016-09-22 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement und Verfahren zur Herstellung eines lichtemittierenden Bauelements
CN104868026B (zh) * 2015-05-22 2019-02-22 深圳市华星光电技术有限公司 量子点发光元件
CN107611232B (zh) * 2017-08-21 2019-02-05 天津三安光电有限公司 发光二极管及其制作方法
DE102017119872A1 (de) * 2017-08-30 2019-02-28 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
US20220254962A1 (en) * 2021-02-11 2022-08-11 Creeled, Inc. Optical arrangements in cover structures for light emitting diode packages and related methods

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KR101221870B1 (ko) * 2009-04-17 2013-01-15 한국전자통신연구원 태양 전지
KR20110108147A (ko) * 2010-03-26 2011-10-05 엘지이노텍 주식회사 발광소자 패키지 및 이를 구비한 라이트 유닛
US10533729B2 (en) 2012-02-27 2020-01-14 Osram Gmbh Light source with LED chip and luminophore layer
KR20150136512A (ko) * 2013-03-25 2015-12-07 오스람 옵토 세미컨덕터스 게엠베하 전자기 방사선을 방출하는 어셈블리의 제조 방법 및 전자기 방사선을 방출하는 어셈블리
KR101632291B1 (ko) * 2014-12-11 2016-06-21 전남대학교산학협력단 고효율 형광체플레이트 및 상기 형광체플레이트를 포함하는 led 응용제품
KR20160072837A (ko) * 2016-06-13 2016-06-23 전남대학교산학협력단 고효율 형광체플레이트 및 상기 형광체플레이트의 제조방법

Also Published As

Publication number Publication date
EP2020038B1 (de) 2017-07-05
EP2020038A1 (de) 2009-02-04
US7982233B2 (en) 2011-07-19
TW200802994A (en) 2008-01-01
US20090272998A1 (en) 2009-11-05
CN101490860A (zh) 2009-07-22
WO2007134582A1 (de) 2007-11-29
DE102006024165A1 (de) 2007-11-29
JP2009537996A (ja) 2009-10-29
CN101490860B (zh) 2011-08-31
TWI390765B (zh) 2013-03-21

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