JP2009537996A - 波長変換物質を有する光電子半導体素子、半導体素子を有する光電子半導体コンポーネント、および光電子半導体素子の製造方法 - Google Patents
波長変換物質を有する光電子半導体素子、半導体素子を有する光電子半導体コンポーネント、および光電子半導体素子の製造方法 Download PDFInfo
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- JP2009537996A JP2009537996A JP2009511331A JP2009511331A JP2009537996A JP 2009537996 A JP2009537996 A JP 2009537996A JP 2009511331 A JP2009511331 A JP 2009511331A JP 2009511331 A JP2009511331 A JP 2009511331A JP 2009537996 A JP2009537996 A JP 2009537996A
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/882—Scattering means
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006024165A DE102006024165A1 (de) | 2006-05-23 | 2006-05-23 | Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips |
| PCT/DE2007/000898 WO2007134582A1 (de) | 2006-05-23 | 2007-05-18 | Optoelektronischer halbleiterchip mit einem wellenlängenkonversionsstoff sowie optoelektronisches halbleiterbauelement mit einem solchen halbleiterchip und verfahren zur herstellung des optoelektronischen halbleiterchips |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009537996A true JP2009537996A (ja) | 2009-10-29 |
| JP2009537996A5 JP2009537996A5 (enExample) | 2011-09-15 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009511331A Pending JP2009537996A (ja) | 2006-05-23 | 2007-05-18 | 波長変換物質を有する光電子半導体素子、半導体素子を有する光電子半導体コンポーネント、および光電子半導体素子の製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7982233B2 (enExample) |
| EP (1) | EP2020038B1 (enExample) |
| JP (1) | JP2009537996A (enExample) |
| KR (1) | KR20090015987A (enExample) |
| CN (1) | CN101490860B (enExample) |
| DE (1) | DE102006024165A1 (enExample) |
| TW (1) | TWI390765B (enExample) |
| WO (1) | WO2007134582A1 (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012038862A (ja) * | 2010-08-05 | 2012-02-23 | Stanley Electric Co Ltd | 半導体発光装置 |
| JP2012174968A (ja) * | 2011-02-23 | 2012-09-10 | Mitsubishi Electric Corp | 発光装置及び発光装置群及び製造方法 |
| JP2013541220A (ja) * | 2010-10-27 | 2013-11-07 | コーニンクレッカ フィリップス エヌ ヴェ | 発光デバイスの製造用のラミネート支持フィルム、及びその製造方法 |
| JP2015002182A (ja) * | 2013-06-13 | 2015-01-05 | 日立アプライアンス株式会社 | 照明装置 |
| JP2015099911A (ja) * | 2013-10-18 | 2015-05-28 | 株式会社エルム | 蛍光体分離構造を備えた蛍光体含有フィルムおよびその製造方法 |
| JP2015115480A (ja) * | 2013-12-12 | 2015-06-22 | 株式会社エルム | 発光装置及びその製造方法 |
| JP2016518019A (ja) * | 2013-03-25 | 2016-06-20 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 電磁放射を放出するモジュールの製造方法、及び、電磁放射を放出するモジュール |
| JP2016532898A (ja) * | 2013-07-30 | 2016-10-20 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 変換要素およびオプトエレクトロニクス部品の製造方法、変換要素、ならびに、オプトエレクトロニクス部品 |
| JP2020532138A (ja) * | 2017-08-30 | 2020-11-05 | オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングOSRAM OLED GmbH | オプトエレクトロニクス半導体デバイスを製造する方法およびオプトエレクトロニクス半導体デバイス |
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| WO2009016585A2 (en) * | 2007-08-02 | 2009-02-05 | Koninklijke Philips Electronics N.V. | Color conversion device |
| US7868340B2 (en) * | 2008-05-30 | 2011-01-11 | Bridgelux, Inc. | Method and apparatus for generating white light from solid state light emitting devices |
| DE102008050643B4 (de) * | 2008-10-07 | 2022-11-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtmittel |
| DE102008057720B4 (de) * | 2008-11-17 | 2024-10-31 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierende Vorrichtung |
| WO2010074987A2 (en) * | 2008-12-24 | 2010-07-01 | 3M Innovative Properties Company | Light generating device having double-sided wavelength converter |
| EP2380217A2 (en) | 2008-12-24 | 2011-10-26 | 3M Innovative Properties Company | Method of making double-sided wavelength converter and light generating device using same |
| DE102009005907A1 (de) * | 2009-01-23 | 2010-07-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
| KR100993045B1 (ko) * | 2009-10-23 | 2010-11-08 | 엘지이노텍 주식회사 | 발광소자 칩 및 발광소자 패키지 |
| KR101221870B1 (ko) * | 2009-04-17 | 2013-01-15 | 한국전자통신연구원 | 태양 전지 |
| JP5662939B2 (ja) * | 2009-05-22 | 2015-02-04 | パナソニックIpマネジメント株式会社 | 半導体発光装置及びそれを用いた光源装置 |
| US20110062468A1 (en) * | 2009-09-11 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Phosphor-converted light emitting diode device |
| KR101655463B1 (ko) * | 2010-03-26 | 2016-09-07 | 엘지이노텍 주식회사 | 발광소자 패키지 및 이를 구비한 라이트 유닛 |
| CN102270732B (zh) * | 2010-06-03 | 2015-06-10 | 展晶科技(深圳)有限公司 | 荧光层结构及其形成方法以及发光二极管封装结构 |
| WO2012042452A2 (en) | 2010-09-29 | 2012-04-05 | Koninklijke Philips Electronics N.V. | Wavelength converted light emitting device |
| TWI474520B (zh) * | 2010-11-29 | 2015-02-21 | Epistar Corp | 發光裝置、混光裝置及其製造方法 |
| DE102011111980A1 (de) | 2011-08-29 | 2013-02-28 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Leuchtdiode und Leuchtdiode |
| DE102012202927B4 (de) | 2012-02-27 | 2021-06-10 | Osram Gmbh | Lichtquelle mit led-chip und leuchtstoffschicht |
| DE102012202928A1 (de) * | 2012-02-27 | 2013-08-29 | Osram Gmbh | Lichtquelle mit led-chip und leuchtstoffschicht |
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| DE102012108704A1 (de) * | 2012-09-17 | 2014-03-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Fixierung einer matrixfreien elektrophoretisch abgeschiedenen Schicht auf einem Halbleiterchip und strahlungsemittierendes Halbleiterbauelement |
| KR20140038692A (ko) * | 2012-09-21 | 2014-03-31 | 포항공과대학교 산학협력단 | 색변환 엘리먼트 및 그 제조방법 |
| CN103852613B (zh) * | 2012-11-29 | 2016-08-10 | 沈阳工业大学 | 一种辐射电流传感方法及专用传感器 |
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| CN107611232B (zh) * | 2017-08-21 | 2019-02-05 | 天津三安光电有限公司 | 发光二极管及其制作方法 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003101074A (ja) * | 2001-09-26 | 2003-04-04 | Stanley Electric Co Ltd | 発光装置 |
| JP2003526950A (ja) * | 2000-03-14 | 2003-09-09 | ルミレス ライティング ベスローテン フェンノートシャップ | 発光ダイオード、照明装置及び照明装置の製造方法 |
| JP2003298120A (ja) * | 2002-04-03 | 2003-10-17 | Idec Izumi Corp | 光源装置および蛍光パターンシート、それらの製造方法、ならびにそれを用いた液晶ディスプレイ装置、照明装置、掲示灯、表示灯および押しボタンスイッチ |
| JP2005244226A (ja) * | 2004-02-23 | 2005-09-08 | Lumileds Lighting Us Llc | 波長変換型半導体発光素子 |
| WO2005083036A1 (en) * | 2004-02-20 | 2005-09-09 | Gelcore Llc | Rules for efficient light sources using phosphor converted leds |
| JP2006032726A (ja) * | 2004-07-16 | 2006-02-02 | Kyocera Corp | 発光装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3819409A (en) * | 1972-07-26 | 1974-06-25 | Westinghouse Electric Corp | Method of manufacturing a display screen |
| DE29724582U1 (de) | 1996-06-26 | 2002-07-04 | OSRAM Opto Semiconductors GmbH & Co. oHG, 93049 Regensburg | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
| US5684309A (en) * | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
| WO1998031055A1 (en) | 1997-01-09 | 1998-07-16 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
| US5895932A (en) | 1997-01-24 | 1999-04-20 | International Business Machines Corporation | Hybrid organic-inorganic semiconductor light emitting diodes |
| US5898185A (en) * | 1997-01-24 | 1999-04-27 | International Business Machines Corporation | Hybrid organic-inorganic semiconductor light emitting diodes |
| US5831277A (en) * | 1997-03-19 | 1998-11-03 | Northwestern University | III-nitride superlattice structures |
| JP3691951B2 (ja) | 1998-01-14 | 2005-09-07 | 東芝電子エンジニアリング株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| DE19955747A1 (de) * | 1999-11-19 | 2001-05-23 | Osram Opto Semiconductors Gmbh | Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur |
| JP2004133420A (ja) * | 2002-09-20 | 2004-04-30 | Seiko Epson Corp | 光学デバイス及びその製造方法、表示装置、電子機器、並びに検査機器 |
| KR100691143B1 (ko) | 2003-04-30 | 2007-03-09 | 삼성전기주식회사 | 다층 형광층을 가진 발광 다이오드 소자 |
| DE102004021233A1 (de) * | 2004-04-30 | 2005-12-01 | Osram Opto Semiconductors Gmbh | Leuchtdiodenanordnung |
| US7045375B1 (en) * | 2005-01-14 | 2006-05-16 | Au Optronics Corporation | White light emitting device and method of making same |
| US7321193B2 (en) * | 2005-10-31 | 2008-01-22 | Osram Opto Semiconductors Gmbh | Device structure for OLED light device having multi element light extraction and luminescence conversion layer |
| EP1964184A2 (en) | 2005-12-14 | 2008-09-03 | Koninklijke Philips Electronics N.V. | Solid-state light source and method of producing light of a desired color point |
-
2006
- 2006-05-23 DE DE102006024165A patent/DE102006024165A1/de not_active Ceased
-
2007
- 2007-05-17 TW TW096117572A patent/TWI390765B/zh not_active IP Right Cessation
- 2007-05-18 KR KR1020087031270A patent/KR20090015987A/ko not_active Ceased
- 2007-05-18 WO PCT/DE2007/000898 patent/WO2007134582A1/de not_active Ceased
- 2007-05-18 EP EP07722446.7A patent/EP2020038B1/de not_active Ceased
- 2007-05-18 CN CN2007800276081A patent/CN101490860B/zh not_active Expired - Fee Related
- 2007-05-18 US US12/301,538 patent/US7982233B2/en not_active Expired - Fee Related
- 2007-05-18 JP JP2009511331A patent/JP2009537996A/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003526950A (ja) * | 2000-03-14 | 2003-09-09 | ルミレス ライティング ベスローテン フェンノートシャップ | 発光ダイオード、照明装置及び照明装置の製造方法 |
| JP2003101074A (ja) * | 2001-09-26 | 2003-04-04 | Stanley Electric Co Ltd | 発光装置 |
| JP2003298120A (ja) * | 2002-04-03 | 2003-10-17 | Idec Izumi Corp | 光源装置および蛍光パターンシート、それらの製造方法、ならびにそれを用いた液晶ディスプレイ装置、照明装置、掲示灯、表示灯および押しボタンスイッチ |
| WO2005083036A1 (en) * | 2004-02-20 | 2005-09-09 | Gelcore Llc | Rules for efficient light sources using phosphor converted leds |
| JP2005244226A (ja) * | 2004-02-23 | 2005-09-08 | Lumileds Lighting Us Llc | 波長変換型半導体発光素子 |
| JP2006032726A (ja) * | 2004-07-16 | 2006-02-02 | Kyocera Corp | 発光装置 |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012038862A (ja) * | 2010-08-05 | 2012-02-23 | Stanley Electric Co Ltd | 半導体発光装置 |
| JP2013541220A (ja) * | 2010-10-27 | 2013-11-07 | コーニンクレッカ フィリップス エヌ ヴェ | 発光デバイスの製造用のラミネート支持フィルム、及びその製造方法 |
| JP2018160678A (ja) * | 2010-10-27 | 2018-10-11 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | ラミネートフィルム、ラミネート構造及びその製造方法 |
| JP2012174968A (ja) * | 2011-02-23 | 2012-09-10 | Mitsubishi Electric Corp | 発光装置及び発光装置群及び製造方法 |
| JP2016518019A (ja) * | 2013-03-25 | 2016-06-20 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 電磁放射を放出するモジュールの製造方法、及び、電磁放射を放出するモジュール |
| US9799795B2 (en) | 2013-03-25 | 2017-10-24 | Osram Opto Semiconductors Gmbh | Method for producing an assembly emitting electromagnetic radiation, and assembly emitting electromagnetic radiation |
| JP2015002182A (ja) * | 2013-06-13 | 2015-01-05 | 日立アプライアンス株式会社 | 照明装置 |
| JP2016532898A (ja) * | 2013-07-30 | 2016-10-20 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 変換要素およびオプトエレクトロニクス部品の製造方法、変換要素、ならびに、オプトエレクトロニクス部品 |
| JP2015099911A (ja) * | 2013-10-18 | 2015-05-28 | 株式会社エルム | 蛍光体分離構造を備えた蛍光体含有フィルムおよびその製造方法 |
| JP2015115480A (ja) * | 2013-12-12 | 2015-06-22 | 株式会社エルム | 発光装置及びその製造方法 |
| JP2020532138A (ja) * | 2017-08-30 | 2020-11-05 | オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングOSRAM OLED GmbH | オプトエレクトロニクス半導体デバイスを製造する方法およびオプトエレクトロニクス半導体デバイス |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2020038B1 (de) | 2017-07-05 |
| KR20090015987A (ko) | 2009-02-12 |
| EP2020038A1 (de) | 2009-02-04 |
| US7982233B2 (en) | 2011-07-19 |
| TW200802994A (en) | 2008-01-01 |
| US20090272998A1 (en) | 2009-11-05 |
| CN101490860A (zh) | 2009-07-22 |
| WO2007134582A1 (de) | 2007-11-29 |
| DE102006024165A1 (de) | 2007-11-29 |
| CN101490860B (zh) | 2011-08-31 |
| TWI390765B (zh) | 2013-03-21 |
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