TWI390765B - 具有波長轉換材料之光電半導體晶片、具有該晶片之光電半導體元件、以及該光電半導體晶片之製造方法 - Google Patents
具有波長轉換材料之光電半導體晶片、具有該晶片之光電半導體元件、以及該光電半導體晶片之製造方法 Download PDFInfo
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- TWI390765B TWI390765B TW096117572A TW96117572A TWI390765B TW I390765 B TWI390765 B TW I390765B TW 096117572 A TW096117572 A TW 096117572A TW 96117572 A TW96117572 A TW 96117572A TW I390765 B TWI390765 B TW I390765B
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- optoelectronic semiconductor
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/882—Scattering means
Landscapes
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006024165A DE102006024165A1 (de) | 2006-05-23 | 2006-05-23 | Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200802994A TW200802994A (en) | 2008-01-01 |
| TWI390765B true TWI390765B (zh) | 2013-03-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096117572A TWI390765B (zh) | 2006-05-23 | 2007-05-17 | 具有波長轉換材料之光電半導體晶片、具有該晶片之光電半導體元件、以及該光電半導體晶片之製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7982233B2 (enExample) |
| EP (1) | EP2020038B1 (enExample) |
| JP (1) | JP2009537996A (enExample) |
| KR (1) | KR20090015987A (enExample) |
| CN (1) | CN101490860B (enExample) |
| DE (1) | DE102006024165A1 (enExample) |
| TW (1) | TWI390765B (enExample) |
| WO (1) | WO2007134582A1 (enExample) |
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| WO2009016585A2 (en) * | 2007-08-02 | 2009-02-05 | Koninklijke Philips Electronics N.V. | Color conversion device |
| US7868340B2 (en) * | 2008-05-30 | 2011-01-11 | Bridgelux, Inc. | Method and apparatus for generating white light from solid state light emitting devices |
| DE102008050643B4 (de) * | 2008-10-07 | 2022-11-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtmittel |
| DE102008057720B4 (de) * | 2008-11-17 | 2024-10-31 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierende Vorrichtung |
| WO2010074987A2 (en) * | 2008-12-24 | 2010-07-01 | 3M Innovative Properties Company | Light generating device having double-sided wavelength converter |
| EP2380217A2 (en) | 2008-12-24 | 2011-10-26 | 3M Innovative Properties Company | Method of making double-sided wavelength converter and light generating device using same |
| DE102009005907A1 (de) * | 2009-01-23 | 2010-07-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
| KR100993045B1 (ko) * | 2009-10-23 | 2010-11-08 | 엘지이노텍 주식회사 | 발광소자 칩 및 발광소자 패키지 |
| KR101221870B1 (ko) * | 2009-04-17 | 2013-01-15 | 한국전자통신연구원 | 태양 전지 |
| JP5662939B2 (ja) * | 2009-05-22 | 2015-02-04 | パナソニックＩｐマネジメント株式会社 | 半導体発光装置及びそれを用いた光源装置 |
| US20110062468A1 (en) * | 2009-09-11 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Phosphor-converted light emitting diode device |
| KR101655463B1 (ko) * | 2010-03-26 | 2016-09-07 | 엘지이노텍 주식회사 | 발광소자 패키지 및 이를 구비한 라이트 유닛 |
| CN102270732B (zh) * | 2010-06-03 | 2015-06-10 | 展晶科技(深圳)有限公司 | 荧光层结构及其形成方法以及发光二极管封装结构 |
| JP5635832B2 (ja) * | 2010-08-05 | 2014-12-03 | スタンレー電気株式会社 | 半導体発光装置 |
| WO2012042452A2 (en) | 2010-09-29 | 2012-04-05 | Koninklijke Philips Electronics N.V. | Wavelength converted light emitting device |
| JP2013541220A (ja) * | 2010-10-27 | 2013-11-07 | コーニンクレッカ フィリップス エヌ ヴェ | 発光デバイスの製造用のラミネート支持フィルム、及びその製造方法 |
| TWI474520B (zh) * | 2010-11-29 | 2015-02-21 | Epistar Corp | 發光裝置、混光裝置及其製造方法 |
| JP5762044B2 (ja) * | 2011-02-23 | 2015-08-12 | 三菱電機株式会社 | 発光装置及び発光装置群及び製造方法 |
| DE102011111980A1 (de) | 2011-08-29 | 2013-02-28 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Leuchtdiode und Leuchtdiode |
| DE102012202927B4 (de) | 2012-02-27 | 2021-06-10 | Osram Gmbh | Lichtquelle mit led-chip und leuchtstoffschicht |
| DE102012202928A1 (de) * | 2012-02-27 | 2013-08-29 | Osram Gmbh | Lichtquelle mit led-chip und leuchtstoffschicht |
| CN102709280A (zh) * | 2012-05-29 | 2012-10-03 | 宁波升谱光电半导体有限公司 | 一种cob集成光源模块 |
| DE102012108704A1 (de) * | 2012-09-17 | 2014-03-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Fixierung einer matrixfreien elektrophoretisch abgeschiedenen Schicht auf einem Halbleiterchip und strahlungsemittierendes Halbleiterbauelement |
| KR20140038692A (ko) * | 2012-09-21 | 2014-03-31 | 포항공과대학교 산학협력단 | 색변환 엘리먼트 및 그 제조방법 |
| CN103852613B (zh) * | 2012-11-29 | 2016-08-10 | 沈阳工业大学 | 一种辐射电流传感方法及专用传感器 |
| DE102013205179A1 (de) | 2013-03-25 | 2014-09-25 | Osram Gmbh | Verfahren zum Herstellen einer elektromagnetische Strahlung emittierenden Baugruppe und elektromagnetische Strahlung emittierende Baugruppe |
| DE102013207226A1 (de) * | 2013-04-22 | 2014-10-23 | Osram Opto Semiconductors Gmbh | Herstellung eines Schichtelements für einen optoelektronischen Halbleiterchip |
| JP2015002182A (ja) * | 2013-06-13 | 2015-01-05 | 日立アプライアンス株式会社 | 照明装置 |
| TW201503421A (zh) * | 2013-07-15 | 2015-01-16 | Ind Tech Res Inst | 發光二極體晶粒 |
| DE102013214896B4 (de) * | 2013-07-30 | 2021-09-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines Konverterelements und eines optoelektronischen Bauelements, Konverterelement und optoelektronisches Bauelement |
| JP2015099911A (ja) * | 2013-10-18 | 2015-05-28 | 株式会社エルム | 蛍光体分離構造を備えた蛍光体含有フィルムおよびその製造方法 |
| JP2015115480A (ja) * | 2013-12-12 | 2015-06-22 | 株式会社エルム | 発光装置及びその製造方法 |
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| WO2015170814A1 (en) * | 2014-05-09 | 2015-11-12 | Lg Electronics Inc. | Apparatus of light source for display and apparatus of display using the same |
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| KR100691143B1 (ko) | 2003-04-30 | 2007-03-09 | 삼성전기주식회사 | 다층 형광층을 가진 발광 다이오드 소자 |
| US7884382B2 (en) * | 2004-02-20 | 2011-02-08 | GE Lighting Solutions, LLC | Rules for efficient light sources using phosphor converted LEDs |
| US7250715B2 (en) | 2004-02-23 | 2007-07-31 | Philips Lumileds Lighting Company, Llc | Wavelength converted semiconductor light emitting devices |
| DE102004021233A1 (de) * | 2004-04-30 | 2005-12-01 | Osram Opto Semiconductors Gmbh | Leuchtdiodenanordnung |
| JP4546176B2 (ja) * | 2004-07-16 | 2010-09-15 | 京セラ株式会社 | 発光装置 |
| US7045375B1 (en) * | 2005-01-14 | 2006-05-16 | Au Optronics Corporation | White light emitting device and method of making same |
| US7321193B2 (en) * | 2005-10-31 | 2008-01-22 | Osram Opto Semiconductors Gmbh | Device structure for OLED light device having multi element light extraction and luminescence conversion layer |
| EP1964184A2 (en) | 2005-12-14 | 2008-09-03 | Koninklijke Philips Electronics N.V. | Solid-state light source and method of producing light of a desired color point |
-
2006
- 2006-05-23 DE DE102006024165A patent/DE102006024165A1/de not_active Ceased
-
2007
- 2007-05-17 TW TW096117572A patent/TWI390765B/zh not_active IP Right Cessation
- 2007-05-18 KR KR1020087031270A patent/KR20090015987A/ko not_active Ceased
- 2007-05-18 WO PCT/DE2007/000898 patent/WO2007134582A1/de not_active Ceased
- 2007-05-18 EP EP07722446.7A patent/EP2020038B1/de not_active Ceased
- 2007-05-18 CN CN2007800276081A patent/CN101490860B/zh not_active Expired - Fee Related
- 2007-05-18 US US12/301,538 patent/US7982233B2/en not_active Expired - Fee Related
- 2007-05-18 JP JP2009511331A patent/JP2009537996A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP2020038B1 (de) | 2017-07-05 |
| KR20090015987A (ko) | 2009-02-12 |
| EP2020038A1 (de) | 2009-02-04 |
| US7982233B2 (en) | 2011-07-19 |
| TW200802994A (en) | 2008-01-01 |
| US20090272998A1 (en) | 2009-11-05 |
| CN101490860A (zh) | 2009-07-22 |
| WO2007134582A1 (de) | 2007-11-29 |
| DE102006024165A1 (de) | 2007-11-29 |
| JP2009537996A (ja) | 2009-10-29 |
| CN101490860B (zh) | 2011-08-31 |
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