CN101489789A - 层叠式主体以及使用层叠式主体制造薄基底的方法 - Google Patents

层叠式主体以及使用层叠式主体制造薄基底的方法 Download PDF

Info

Publication number
CN101489789A
CN101489789A CNA2007800268210A CN200780026821A CN101489789A CN 101489789 A CN101489789 A CN 101489789A CN A2007800268210 A CNA2007800268210 A CN A2007800268210A CN 200780026821 A CN200780026821 A CN 200780026821A CN 101489789 A CN101489789 A CN 101489789A
Authority
CN
China
Prior art keywords
light
substrate
heat conversion
conversion layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007800268210A
Other languages
English (en)
Chinese (zh)
Inventor
理查德·J·韦伯
迈克尔·A·克罗普
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN101489789A publication Critical patent/CN101489789A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
    • B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CNA2007800268210A 2006-07-14 2007-07-13 层叠式主体以及使用层叠式主体制造薄基底的方法 Pending CN101489789A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/457,567 2006-07-14
US11/457,567 US20080014532A1 (en) 2006-07-14 2006-07-14 Laminate body, and method for manufacturing thin substrate using the laminate body

Publications (1)

Publication Number Publication Date
CN101489789A true CN101489789A (zh) 2009-07-22

Family

ID=38923562

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007800268210A Pending CN101489789A (zh) 2006-07-14 2007-07-13 层叠式主体以及使用层叠式主体制造薄基底的方法

Country Status (7)

Country Link
US (2) US20080014532A1 (https=)
EP (1) EP2040925A1 (https=)
JP (1) JP2009543708A (https=)
KR (1) KR20090031562A (https=)
CN (1) CN101489789A (https=)
TW (1) TW200810883A (https=)
WO (1) WO2008008931A1 (https=)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102403221A (zh) * 2010-09-15 2012-04-04 旭硝子株式会社 半导体元件的制造方法
CN103035483A (zh) * 2012-08-28 2013-04-10 上海华虹Nec电子有限公司 一种应用于薄硅片的临时键合和解离工艺方法
CN104008964A (zh) * 2013-02-20 2014-08-27 三星电子株式会社 研磨衬底的方法和使用该方法制造半导体发光器件的方法
CN105103267A (zh) * 2013-03-27 2015-11-25 富士胶片株式会社 半导体装置制造用临时粘合用层叠体、和半导体装置的制造方法
CN108700762A (zh) * 2016-02-22 2018-10-23 大日本印刷株式会社 调光单元
CN108821233A (zh) * 2018-05-31 2018-11-16 华进半导体封装先导技术研发中心有限公司 临时键合结构及其制作方法、拆键合方法
CN109216207A (zh) * 2017-06-30 2019-01-15 台湾积体电路制造股份有限公司 封装件及其形成方法
CN109309013A (zh) * 2017-07-28 2019-02-05 台湾积体电路制造股份有限公司 Lthc在形成封装件中作为电荷阻挡层、封装件及其形成方法
CN110036040A (zh) * 2016-12-05 2019-07-19 科思创德国股份有限公司 用于在冲压法中通过逐层构建而制造物件的方法和系统
CN110494520A (zh) * 2017-06-16 2019-11-22 欧姆龙株式会社 粘接剂组合物的硬化方法以及粘接结构体的制造方法
CN114555742A (zh) * 2019-10-18 2022-05-27 3M创新有限公司 粘合剂膜
CN114846101A (zh) * 2019-12-09 2022-08-02 3M创新有限公司 粘合剂膜

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150235A (ja) 2003-11-12 2005-06-09 Three M Innovative Properties Co 半導体表面保護シート及び方法
US20090017248A1 (en) * 2007-07-13 2009-01-15 3M Innovative Properties Company Layered body and method for manufacturing thin substrate using the layered body
US20090017323A1 (en) * 2007-07-13 2009-01-15 3M Innovative Properties Company Layered body and method for manufacturing thin substrate using the layered body
US7666568B2 (en) * 2007-10-23 2010-02-23 E. I. Du Pont De Nemours And Company Composition and method for providing a patterned metal layer having high conductivity
JP2010062269A (ja) * 2008-09-02 2010-03-18 Three M Innovative Properties Co ウェーハ積層体の製造方法、ウェーハ積層体製造装置、ウェーハ積層体、支持層剥離方法、及びウェーハの製造方法
US9184595B2 (en) * 2008-09-27 2015-11-10 Witricity Corporation Wireless energy transfer in lossy environments
JP2010102106A (ja) * 2008-10-23 2010-05-06 Nitto Denko Corp 光導波路用組成物およびその製造方法、ならびにそれを用いた光導波路、光導波路の製造方法
JP6085076B2 (ja) * 2009-03-16 2017-02-22 リンテック株式会社 粘着シートおよび半導体ウエハの加工方法、半導体チップの製造方法
US20100300218A1 (en) * 2009-06-02 2010-12-02 Electric Power Research Institute, Inc. Dispersant application for clean-up of recirculation paths of a power producing facility during start-up
US9018308B2 (en) 2009-12-01 2015-04-28 Pbi Performance Products, Inc. Polybenzimidazole/polyacrylate mixtures
US9837295B2 (en) 2010-04-15 2017-12-05 Suss Microtec Lithography Gmbh Apparatus and method for semiconductor wafer leveling, force balancing and contact sensing
US9859141B2 (en) 2010-04-15 2018-01-02 Suss Microtec Lithography Gmbh Apparatus and method for aligning and centering wafers
ES2461149T3 (es) * 2010-10-21 2014-05-16 Borealis Ag Cable que comprende una capa formada por una composición que contiene grupos epoxi
US8798432B2 (en) * 2010-10-21 2014-08-05 Microsoft Corporation Fabrication of a laminated optical wedge
DE102010043149A1 (de) 2010-10-29 2012-05-03 Wacker Chemie Ag Hochtransparente durch Licht vernetzbare Siliconmischungen
JP5756334B2 (ja) 2010-10-29 2015-07-29 東京応化工業株式会社 積層体、およびその積層体の分離方法
JP2012109538A (ja) 2010-10-29 2012-06-07 Tokyo Ohka Kogyo Co Ltd 積層体、およびその積層体の分離方法
JP5802106B2 (ja) 2010-11-15 2015-10-28 東京応化工業株式会社 積層体、および分離方法
JP5714318B2 (ja) * 2010-12-24 2015-05-07 日東電工株式会社 ウエハマウント作製方法
WO2012094264A2 (en) * 2011-01-05 2012-07-12 Jenny Buettner Adhesively attachable material and method for fabrication thereof
WO2012118700A1 (en) 2011-02-28 2012-09-07 Dow Corning Corporation Wafer bonding system and method for bonding and debonding thereof
JP5846060B2 (ja) * 2011-07-27 2016-01-20 信越化学工業株式会社 ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
US8696864B2 (en) 2012-01-26 2014-04-15 Promerus, Llc Room temperature debonding composition, method and stack
US20150017434A1 (en) * 2012-01-30 2015-01-15 3M Innovative Properties Company Apparatus, hybrid laminated body, method, and materials for temporary substrate support
JP5977532B2 (ja) * 2012-02-20 2016-08-24 東京応化工業株式会社 支持体分離方法及び支持体分離装置
JP2013211505A (ja) * 2012-03-02 2013-10-10 Fujifilm Corp 半導体装置の製造方法
JP5687647B2 (ja) * 2012-03-14 2015-03-18 株式会社東芝 半導体装置の製造方法、半導体製造装置
US20150034238A1 (en) * 2012-03-20 2015-02-05 3M Innovative Properties Company Laminate body, method, and materials for temporary substrate support and support separation
JP5591859B2 (ja) * 2012-03-23 2014-09-17 株式会社東芝 基板の分離方法及び分離装置
EP2871482B1 (en) * 2012-07-09 2018-07-18 Sony Corporation Microchip and method for producing microchip
EP2874193B1 (en) * 2012-07-13 2019-11-06 LG Chem, Ltd. Photothermal conversion film having good visible light transmittance, and transfer film for oled using same
US9269623B2 (en) 2012-10-25 2016-02-23 Rohm And Haas Electronic Materials Llc Ephemeral bonding
JP6088230B2 (ja) * 2012-12-05 2017-03-01 東京応化工業株式会社 積層体の形成方法
US9228086B2 (en) * 2013-02-05 2016-01-05 Medarray, Inc. Siloxane based hollow fibers
TWI633157B (zh) * 2013-10-18 2018-08-21 Shin-Etsu Chemical Co., Ltd. 紫外線硬化性有機聚矽氧烷組成物及版材之製造方法
US9315696B2 (en) 2013-10-31 2016-04-19 Dow Global Technologies Llc Ephemeral bonding
CN103871975B (zh) * 2014-02-26 2017-02-01 江西创成电子有限公司 一种芯片封装散热方法
TWI551199B (zh) 2014-04-16 2016-09-21 矽品精密工業股份有限公司 具電性連接結構之基板及其製法
US10141216B2 (en) 2014-10-22 2018-11-27 Promerus, Llc Room temperature debondable and thermally curable compositions
JP6437805B2 (ja) * 2014-12-03 2018-12-12 東京応化工業株式会社 積層体の製造方法、封止基板積層体の製造方法及び積層体
US9644118B2 (en) 2015-03-03 2017-05-09 Dow Global Technologies Llc Method of releasably attaching a semiconductor substrate to a carrier
JP6486735B2 (ja) 2015-03-17 2019-03-20 東芝メモリ株式会社 半導体製造方法および半導体製造装置
KR102352742B1 (ko) * 2015-03-25 2022-01-18 삼성디스플레이 주식회사 커버 윈도우 및 이를 포함하는 표시 장치
CN104953041A (zh) * 2015-04-22 2015-09-30 电子科技大学 一种生物可降解的柔性光电子器件用基板及其制备方法
JP6465743B2 (ja) * 2015-05-14 2019-02-06 東京応化工業株式会社 分離層形成用組成物、分離層、分離層を含む積層体、積層体の製造方法および積層体の処理方法
JP2017050322A (ja) * 2015-08-31 2017-03-09 Jsr株式会社 基材の処理方法、半導体装置およびその製造方法
CN105150120B (zh) * 2015-09-01 2018-03-30 河南科技学院 一种Roll‑to‑Roll化学机械抛光机用固结磨料抛光辊的刚性层及其制备方法
JP6610510B2 (ja) * 2015-11-26 2019-11-27 信越化学工業株式会社 ウエハ積層体及びその製造方法
US10074626B2 (en) * 2016-06-06 2018-09-11 Shin-Etsu Chemical Co., Ltd. Wafer laminate and making method
KR102320673B1 (ko) 2016-12-28 2021-11-01 인벤사스 본딩 테크놀로지스 인코포레이티드 적층된 기판의 처리
US10964664B2 (en) 2018-04-20 2021-03-30 Invensas Bonding Technologies, Inc. DBI to Si bonding for simplified handle wafer
US12559655B2 (en) * 2018-05-01 2026-02-24 Nissan Chemical Corporation Polysiloxane-containing temporary adhesive comprising heat-resistant polymerization inhibitor
WO2019227955A1 (zh) * 2018-05-31 2019-12-05 浙江清华柔性电子技术研究院 柔性器件的过渡装置、制备方法及柔性器件的制作方法
CN110310914B (zh) 2019-07-04 2021-12-31 京东方科技集团股份有限公司 一种柔性器件及其制作方法、柔性装置
TWI732473B (zh) * 2020-02-26 2021-07-01 世界先進積體電路股份有限公司 形成晶粒結構的方法及晶粒結構
CN115485814B (zh) 2020-04-30 2026-01-23 信越化学工业株式会社 晶片加工用临时粘接剂、晶片层叠体以及薄型晶片的制造方法
EP4315398A4 (en) 2021-03-31 2025-03-05 Adeia Semiconductor Bonding Technologies Inc. DIRECT ADHESION AND REMOVING A CARRIER
JP7751399B2 (ja) * 2021-04-02 2025-10-08 株式会社荏原製作所 研磨パッド、研磨装置、研磨方法
TWI829142B (zh) * 2021-04-28 2024-01-11 日商斯庫林集團股份有限公司 基板處理方法及處理液
JP7840183B2 (ja) * 2021-04-28 2026-04-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および処理液
JPWO2023032782A1 (https=) * 2021-08-30 2023-03-09
JP2023098471A (ja) * 2021-12-28 2023-07-10 スリーエム イノベイティブ プロパティズ カンパニー 光熱変換層インク組成物及び積層体
EP4206807B1 (en) * 2022-01-01 2025-08-06 LG Display Co., Ltd. Display apparatus having a back-light unit having light-emitting chips
JP7819041B2 (ja) * 2022-06-13 2026-02-24 日東電工株式会社 電子部品仮固定用粘着シート
WO2023248872A1 (ja) * 2022-06-20 2023-12-28 日産化学株式会社 光照射剥離用の剥離剤組成物

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2843555A (en) * 1956-10-01 1958-07-15 Gen Electric Room temperature curing organopolysiloxane
GB923710A (en) * 1960-11-07 1963-04-18 Ici Ltd Production of organosilicon compounds
US3220972A (en) * 1962-07-02 1965-11-30 Gen Electric Organosilicon process using a chloroplatinic acid reaction product as the catalyst
US3159662A (en) * 1962-07-02 1964-12-01 Gen Electric Addition reaction
US3410886A (en) * 1965-10-23 1968-11-12 Union Carbide Corp Si-h to c=c or c=c addition in the presence of a nitrile-platinum (ii) halide complex
US3313773A (en) * 1965-12-03 1967-04-11 Gen Electric Platinum addition catalyst system
AT278040B (de) * 1966-12-16 1970-01-26 Degussa Verfahren zur Herstellung von Organosiliziumverbindungen
DE1259888B (de) * 1967-05-27 1968-02-01 Bayer Ag Verfahren zur Herstellung von Organosiliciumverbindungen
US3814730A (en) * 1970-08-06 1974-06-04 Gen Electric Platinum complexes of unsaturated siloxanes and platinum containing organopolysiloxanes
US3715334A (en) * 1970-11-27 1973-02-06 Gen Electric Platinum-vinylsiloxanes
US3775452A (en) * 1971-04-28 1973-11-27 Gen Electric Platinum complexes of unsaturated siloxanes and platinum containing organopolysiloxanes
NL7207442A (https=) * 1971-06-25 1972-12-28
DE2846621A1 (de) * 1978-10-26 1980-05-08 Wacker Chemie Gmbh Verfahren zum anlagern von si-gebundenem wasserstoff an aliphatische mehrfachbindung
US4288345A (en) * 1980-02-06 1981-09-08 General Electric Company Platinum complex
US4313988A (en) * 1980-02-25 1982-02-02 Minnesota Mining And Manufacturing Company Epoxypolysiloxane release coatings for adhesive materials
US4394414A (en) * 1981-05-29 1983-07-19 Ppg Industries, Inc. Aqueous sizing composition for glass fibers for use on chopped glass fibers
US5089536A (en) * 1982-11-22 1992-02-18 Minnesota Mining And Manufacturing Company Energy polmerizable compositions containing organometallic initiators
US4530879A (en) * 1983-03-04 1985-07-23 Minnesota Mining And Manufacturing Company Radiation activated addition reaction
US4510094A (en) * 1983-12-06 1985-04-09 Minnesota Mining And Manufacturing Company Platinum complex
US4712092A (en) * 1983-12-20 1987-12-08 Aaron J. Gellman Parallel encoded piezoelectric keyboard switch and array
US4603215A (en) * 1984-08-20 1986-07-29 Dow Corning Corporation Platinum (O) alkyne complexes
FR2571732B1 (fr) * 1984-10-15 1987-01-09 Rhone Poulenc Spec Chim Composition organopolysiloxanique de revetement utilisable notamment pour le traitement antiadherent et son procede d'application
FR2575086B1 (fr) * 1984-12-20 1987-02-20 Rhone Poulenc Spec Chim Complexe platine-alcenylcyclohexene comme catalyseur de reaction d'hydrosilylation et son procede de preparation
US4677137A (en) * 1985-05-31 1987-06-30 Minnesota Mining And Manufacturing Company Supported photoinitiator
US4705765A (en) * 1985-12-19 1987-11-10 General Electric Company Hydrosilylation catalyst, method for making and use
US4670531A (en) * 1986-01-21 1987-06-02 General Electric Company Inhibited precious metal catalyzed organopolysiloxane compositions
JPS62215658A (ja) 1986-03-17 1987-09-22 Shin Etsu Chem Co Ltd 光硬化性オルガノポリシロキサン組成物
US4916169A (en) * 1988-09-09 1990-04-10 Minnesota Mining And Manufacturing Company Visible radiation activated hydrosilation reaction
US5414297A (en) * 1989-04-13 1995-05-09 Seiko Epson Corporation Semiconductor device chip with interlayer insulating film covering the scribe lines
US5091483A (en) * 1989-09-22 1992-02-25 Minnesota Mining And Manufacturing Company Radiation-curable silicone elastomers and pressure sensitive adhesives
US6376569B1 (en) * 1990-12-13 2002-04-23 3M Innovative Properties Company Hydrosilation reaction utilizing a (cyclopentadiene)(sigma-aliphatic) platinum complex and a free radical photoinitiator
US5286815A (en) * 1992-02-07 1994-02-15 Minnesota Mining And Manufacturing Company Moisture curable polysiloxane release coating compositions
US5332797A (en) * 1992-04-01 1994-07-26 Minnesota Mining And Manufacturing Company Silicone release compositions
US5633176A (en) * 1992-08-19 1997-05-27 Seiko Instruments Inc. Method of producing a semiconductor device for a light valve
US5476566A (en) * 1992-09-02 1995-12-19 Motorola, Inc. Method for thinning a semiconductor wafer
JP3325650B2 (ja) 1993-04-15 2002-09-17 株式会社ディスコ ウェーハの研磨方法
US5729038A (en) * 1995-12-15 1998-03-17 Harris Corporation Silicon-glass bonded wafers
AU690302B2 (en) * 1994-06-30 1998-04-23 Dade Behring Inc. Bioactive porous partition members
US5604038A (en) * 1994-11-18 1997-02-18 Wisconsin Alumni Research Foundation Polymeric thin layer materials
US5958794A (en) * 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5967030A (en) * 1995-11-17 1999-10-19 Micron Technology, Inc. Global planarization method and apparatus
US5872046A (en) * 1996-04-10 1999-02-16 Texas Instruments Incorporated Method of cleaning wafer after partial saw
WO1998012075A1 (en) 1996-09-18 1998-03-26 Minnessota Mining And Manufacturing Company Adhesively-bonded inflatable restraint and method of making
US6235141B1 (en) * 1996-09-27 2001-05-22 Digital Optics Corporation Method of mass producing and packaging integrated optical subsystems
WO1998040439A1 (en) * 1997-03-14 1998-09-17 Minnesota Mining And Manufacturing Company Cure-on-demand, moisture-curable compositions having reactive silane functionality
US6194317B1 (en) * 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
JPH11283279A (ja) 1998-01-30 1999-10-15 Minnesota Mining & Mfg Co <3M> 貼り合わせ型光ディスク並びにその製造方法及び装置
US6395124B1 (en) * 1999-07-30 2002-05-28 3M Innovative Properties Company Method of producing a laminated structure
US6447884B1 (en) * 2000-03-20 2002-09-10 Kodak Polychrome Graphics Llc Low volume ablatable processless imaging member and method of use
JP4253423B2 (ja) * 2000-06-14 2009-04-15 富士フイルム株式会社 ポジ型レジスト積層物
JP3485525B2 (ja) * 2000-07-06 2004-01-13 沖電気工業株式会社 半導体装置の製造方法
US20020072296A1 (en) * 2000-11-29 2002-06-13 Muilenburg Michael J. Abrasive article having a window system for polishing wafers, and methods
JP4757398B2 (ja) * 2001-04-24 2011-08-24 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
AT502233B1 (de) * 2001-06-07 2007-04-15 Thallner Erich Vorrichtung zum lösen eines trägers von einer halbleiterscheibe
TWI250190B (en) * 2001-10-03 2006-03-01 Dow Corning Toray Silicone Adhesive sheet of cross-linked silicone, method of manufacturing thereof, and device
JP2003200436A (ja) 2002-01-10 2003-07-15 Shin Etsu Polymer Co Ltd 電子部品の外部電極塗布に用いる保持プレートの製造方法
TWI267168B (en) * 2002-01-15 2006-11-21 Sekisui Chemical Co Ltd Manufacturing method of IC chip
WO2003081653A1 (en) * 2002-03-27 2003-10-02 Mitsui Chemicals, Inc. Pressure-sensitive adhesive film for the surface protection of semiconductor wafers and method for protection of semiconductor wafers with the film
US7534498B2 (en) * 2002-06-03 2009-05-19 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
JP4565804B2 (ja) 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
FR2848563B1 (fr) * 2002-12-16 2006-07-28 Rhodia Chimie Sa Composition silicone pour revetement dur, a base de silice colloidale, durcissable par voie cationique, antibuee et/ou antisalissures
JP4171898B2 (ja) * 2003-04-25 2008-10-29 信越化学工業株式会社 ダイシング・ダイボンド用接着テープ
US20050016464A1 (en) * 2003-07-24 2005-01-27 General Electric Company Methods and fixtures for facilitating handling of thin films
US7064069B2 (en) * 2003-10-21 2006-06-20 Micron Technology, Inc. Substrate thinning including planarization
JP4405246B2 (ja) 2003-11-27 2010-01-27 スリーエム イノベイティブ プロパティズ カンパニー 半導体チップの製造方法
JP2005191550A (ja) * 2003-12-01 2005-07-14 Tokyo Ohka Kogyo Co Ltd 基板の貼り付け方法
US7226812B2 (en) * 2004-03-31 2007-06-05 Intel Corporation Wafer support and release in wafer processing

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102403221A (zh) * 2010-09-15 2012-04-04 旭硝子株式会社 半导体元件的制造方法
CN103035483A (zh) * 2012-08-28 2013-04-10 上海华虹Nec电子有限公司 一种应用于薄硅片的临时键合和解离工艺方法
CN103035483B (zh) * 2012-08-28 2015-10-14 上海华虹宏力半导体制造有限公司 一种应用于薄硅片的临时键合和解离工艺方法
CN104008964A (zh) * 2013-02-20 2014-08-27 三星电子株式会社 研磨衬底的方法和使用该方法制造半导体发光器件的方法
CN104008964B (zh) * 2013-02-20 2017-03-01 三星电子株式会社 研磨衬底的方法和使用该方法制造半导体发光器件的方法
CN105103267A (zh) * 2013-03-27 2015-11-25 富士胶片株式会社 半导体装置制造用临时粘合用层叠体、和半导体装置的制造方法
CN108700762A (zh) * 2016-02-22 2018-10-23 大日本印刷株式会社 调光单元
CN110036040B (zh) * 2016-12-05 2022-03-25 科思创德国股份有限公司 用于在冲压法中通过逐层构建而制造物件的方法和系统
CN110036040A (zh) * 2016-12-05 2019-07-19 科思创德国股份有限公司 用于在冲压法中通过逐层构建而制造物件的方法和系统
US11773296B2 (en) 2017-06-16 2023-10-03 Omron Corporation Method for curing adhesive composition and method for manufacturing bonded structure
CN110494520B (zh) * 2017-06-16 2022-04-05 欧姆龙株式会社 粘接剂组合物的硬化方法以及粘接结构体的制造方法
CN110494520A (zh) * 2017-06-16 2019-11-22 欧姆龙株式会社 粘接剂组合物的硬化方法以及粘接结构体的制造方法
US10916450B2 (en) 2017-06-30 2021-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Package of integrated circuits having a light-to-heat-conversion coating material
CN109216207B (zh) * 2017-06-30 2021-06-15 台湾积体电路制造股份有限公司 封装件及其形成方法
CN109216207A (zh) * 2017-06-30 2019-01-15 台湾积体电路制造股份有限公司 封装件及其形成方法
CN109309013A (zh) * 2017-07-28 2019-02-05 台湾积体电路制造股份有限公司 Lthc在形成封装件中作为电荷阻挡层、封装件及其形成方法
US11437361B2 (en) 2017-07-28 2022-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. LTHC as charging barrier in InFO package formation
US11923353B2 (en) 2017-07-28 2024-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. LTHC as charging barrier in info package formation
US12334489B2 (en) 2017-07-28 2025-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lthc as charging barrier in info package formation
CN108821233A (zh) * 2018-05-31 2018-11-16 华进半导体封装先导技术研发中心有限公司 临时键合结构及其制作方法、拆键合方法
CN114555742A (zh) * 2019-10-18 2022-05-27 3M创新有限公司 粘合剂膜
CN114555742B (zh) * 2019-10-18 2024-05-24 3M创新有限公司 粘合剂膜
CN114846101A (zh) * 2019-12-09 2022-08-02 3M创新有限公司 粘合剂膜
CN114846101B (zh) * 2019-12-09 2023-07-14 3M创新有限公司 粘合剂膜

Also Published As

Publication number Publication date
WO2008008931A1 (en) 2008-01-17
KR20090031562A (ko) 2009-03-26
TW200810883A (en) 2008-03-01
US20090115075A1 (en) 2009-05-07
JP2009543708A (ja) 2009-12-10
EP2040925A1 (en) 2009-04-01
US20080014532A1 (en) 2008-01-17
US7759050B2 (en) 2010-07-20

Similar Documents

Publication Publication Date Title
CN101489789A (zh) 层叠式主体以及使用层叠式主体制造薄基底的方法
EP2551322B1 (en) Wafer processing laminate, wafer processing member, temporary bonding arrangement, and thin wafer manufacturing method
EP2587530B1 (en) Wafer processing laminate, wafer processing member, temporary bonding arrangement, and thin wafer manufacturing method
EP2634794B1 (en) Adhesive layer for use in temporarily supporting a wafer during processing, wafer support with adhesive layer for processing wafer, wafer-adhesive-support composite and method of manufacturing a thin wafer
JP5767159B2 (ja) ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
JP5687230B2 (ja) ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
EP3038148B1 (en) Wafer temporary bonding method and thin wafer manufacturing method
US20090017323A1 (en) Layered body and method for manufacturing thin substrate using the layered body
KR102268248B1 (ko) 웨이퍼 가공체, 웨이퍼 가공용 가접착재, 및 박형 웨이퍼의 제조방법
EP3133641B1 (en) Wafer processing bonding arrangement, wafer laminate, and thin wafer manufacturing method
US20090017248A1 (en) Layered body and method for manufacturing thin substrate using the layered body
EP3037495A1 (en) Wafer processing laminate, temporary adhesive material for wafer processing, and method for manufacturing thin wafer
JP2015179692A (ja) ウエハ加工体、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
KR102494875B1 (ko) 웨이퍼 가공용 가접착재, 웨이퍼 가공체 및 박형 웨이퍼의 제조 방법
JP7717757B2 (ja) 基板加工用仮接着材料及び積層体の製造方法
JP5525200B2 (ja) 半導体チップ積層体の製造方法
JP2022072212A (ja) 基材レスシリコーン吸着シート、該シートを用いたウェーハ加工用積層体および該加工用積層体を用いたウェーハ加工方法
JP2020097217A (ja) 積層体の製造方法、及び基板の製造方法
JP2025183097A (ja) 回路付基板加工用熱硬化性シロキサン重合体組成物、回路付基板積層体の製造方法及び薄型回路付基板の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20090722