CN109216207B - 封装件及其形成方法 - Google Patents

封装件及其形成方法 Download PDF

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Publication number
CN109216207B
CN109216207B CN201711278625.4A CN201711278625A CN109216207B CN 109216207 B CN109216207 B CN 109216207B CN 201711278625 A CN201711278625 A CN 201711278625A CN 109216207 B CN109216207 B CN 109216207B
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coating material
release film
forming
package
metal
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CN109216207A (zh
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邹贤儒
吴志伟
王卜
卢思维
施应庆
林俊成
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本申请的实施例提供了一种形成封装件的方法，包括在载体上方形成释放膜、在释放膜上形成金属柱、将金属柱包封在包封材料中、在包封材料上实施平坦化以暴露金属柱、在包封材料和金属柱上方形成重分布结构、分解释放膜的第一部分以将释放膜的第二部分与载体分离、以及在释放膜中形成开口以暴露金属柱。本申请的实施例还提供了另一种形成封装件的方法以及一种封装件。

Description

封装件及其形成方法
优先权以及交叉引用
本申请要求以下临时提交的美国专利申请的权益：题为“Release Film asIsolation Film in Package”的于2017年6月30日提交的申请号第62/527,221号，该申请通过引用结合于此。
技术领域
本申请的实施例涉及半导体领域，并且更具体地，涉及封装件及其形成方法。
背景技术
随着半导体技术的发展，半导体芯片/管芯变得越来越小。同时，更多功能需要集成在半导体管芯内。因此，半导体管芯需要将越来越多的I/O焊盘封装在更小的区域内，并且因此I/O焊盘的密度随着时间的推移快速提高。结果，半导体管芯的封装变得更加困难，这会对封装产量产生不利影响。
传统的封装技术可以划分为两类。在第一类中，晶圆上的管芯在它们被切割之前封装。这种封装技术具有一些有利的特征，诸如更高的生产量和更低的成本。此外，需要较少的底部填充物或模塑料。然而，这种封装技术还具有缺陷。由于管芯的尺寸正变得越来越小，并且相应的封装件仅可以是扇入型封装件，其中，每个管芯的I/O焊盘限制于直接位于相应的管芯的表面上方的区域。由于管芯的面积有限，I/O焊盘的数量由于I/O焊盘的间距的限制而受到限制。如果焊盘的间距减小，可能会发生焊料桥接。此外，在固定的焊球尺寸需求下，焊球必须具有特定尺寸，这进而限制可以封装在管芯表面上的焊球的数量。
在另一类封装中，在封装管芯之前从晶圆锯切管芯。这种封装技术的有利特征在于可能形成扇出型封装件，这意味着管芯上的I/O焊盘可以被重新分布至比管芯更大的区域，并且因此可以增加封装在管芯表面上的I/O焊盘的数量。该封装技术的另一有利特征是封装“已知良好的管芯”，以及丢弃有缺陷的管芯，因此不在有缺陷的管芯上浪费成本和精力。
发明内容
根据本申请的实施例，提供了一种形成封装件的方法，包括：在载体上方形成释放膜；在释放膜上形成金属柱；将金属柱包封在包封材料中；在包封材料上实施平坦化以暴露金属柱；在包封材料和金属柱上方形成重分布结构；分解释放膜的第一部分以将释放膜的第二部分与载体分离；以及在释放膜中形成开口以暴露金属柱。
根据本申请的实施例，提供了一种形成封装件的方法，包括：在载体上涂覆光热转换(LTHC)涂覆材料；形成与LTHC涂覆材料接触的金属晶种层；在金属晶种层上方形成图案化的光刻胶，其中通过图案化的光刻胶中的开口暴露金属晶种层的一部分；在金属晶种层上方电镀金属柱；去除图案化的光刻胶；蚀刻金属晶种层以暴露LTHC涂覆材料；在涂覆材料上投射光以分解LTHC涂覆材料的第一部分，并且保留LTHC涂覆材料的第二部分，其中LTHC涂覆材料的第一部分与载体接触；剥离载体；以及形成穿过LTHC涂覆材料的第二部分的焊料区域。
根据本申请的实施例，提供了一种封装件，包括：包封材料；通孔，穿过包封材料；光热转换(LTHC)涂覆材料，接触通孔和包封材料；以及导电部件，穿过LTHC涂覆材料。
附图说明
当结合附图进行阅读时，根据下面详细的描述可以最佳地理解本发明的各方面。应该强调的是，根据工业中的标准实践，各个部件未按比例绘制。实际上，为了清楚地讨论，各个部件的尺寸可以任意地增加或减少。
图1至图18示出了根据一些实施例的在形成封装件的过程中的中间阶段的截面图；
图19A和图19B分别示出了根据一些实施例的封装件中的部分释放膜的俯视图和截面图；
图19C示出了根据一些实施例的部分释放膜的放大图；
图20示出了根据一些实施例的用于形成封装件的工艺流程图。
具体实施方式
以下公开内容提供了许多用于实现本发明的不同特征的不同实施例或实例。以下描述组件和布置的具体实例以简化本发明。当然，这些仅仅是实例而不旨在限制。例如，在以下描述中，在第二部件上方或上形成第一部件可以包括第一部件和第二部件形成为直接接触的实施例，并且也可以包括形成在第一部件和第二部件之间的附加部件使得第一部件和第二部件可以不直接接触的实施例。此外，本发明可以在各个实例中重复参考标号和/或字符。该重复是出于简明和清楚的目的，而其本身并未指示所讨论的各个实施例和/或配置之间的关系。
而且，为了便于描述，在此可以使用诸如“在...下面”、“在...下方”、“下部”、“在...上面”、“上部”等空间相对术语以描述如图所示的一个元件或部件与另一个(或另一些)元件或部件的关系。除了图中所示的方位外，空间相对位置术语旨在包括器件在使用或操作中的不同方位。装置可以以其他方式定向(旋转90度或在其他方位上)，并且本文使用的空间相对描述符可以同样地作相应的解释。
根据各个示例性实施例，提供了集成扇出(InFO)封装件及其形成方法。根据一些实施例，示出了形成InFO封装件的中间阶段。讨论了一些实施例的一些变形例。在全部附图和说明性实施例中，相同的参考标号用于指示相同的元件。
图1至图18示出了根据一些实施例的在形成封装件的过程中的中间阶段的截面图。在图20所示的工艺流程400中也示意性地示出了图1至图18中所示的步骤。
参考图1，提供载体20，并且在载体20上方涂覆释放膜22。相应的步骤在图20所示的工艺流程图中示出为步骤402。载体20由透明材料形成，并且可以是玻璃载体、陶瓷载体、有机载体等。载体20可以具有俯视图为圆形的形状，并且可以具有硅晶圆的尺寸。例如，载体20可以具有8英寸直径、12英寸直径等。释放膜22与载体20的顶面物理接触。释放膜22可以由光热转换(LTHC)涂覆材料形成。可以通过涂覆在载体20上施加释放膜22。根据本公开的一些实施例，LTHC涂覆材料在光/辐射(例如激光)的热度下能够分解，并且因此能够从形成在其上的结构释放载体20。根据本公开的一些实施例，LTHC涂覆材料22包括碳黑(碳颗粒)、溶剂、硅填充物和/或环氧树脂。环氧树脂可以包括聚酰亚胺或诸如丙烯酸的其他聚合物。聚酰亚胺(如果包括在LTHC涂覆材料中)是不同于用于光刻的典型的聚酰亚胺的，这是因为其不再是光敏的、并且不能通过曝光和显影被去除。根据本公开的一些实施例，LTHC涂覆材料22的厚度可以在大约1μm至大约2μm的范围内。应当理解，本公开的整个说明书中列举的数值均是示例，并可以被更改为不同的数值。LTHC涂覆材料22可以以流体形式涂覆，并且然后被固化，例如在紫外(UV)光下。LTHC涂覆材料22是均匀的材料，并且全部LTHC涂覆材料22具有相同的成分。
图2至图4示出了金属柱32的形成。相应的步骤在图20所示的工艺流程图中示出为步骤404。在整个说明书中，因为金属柱32穿过随后分配的包封材料，所以金属柱32可选地称为通孔32。
参考图2，形成金属晶种层24，例如通过物理汽相沉积(PVD)。根据本公开的一些实施例，在LTHC涂覆材料22和金属晶种层24之间没有形成介电层，并且因此金属晶种层24与LTHC涂覆材料22物理接触。例如，在LTHC涂覆材料22和金属晶种层24之间没有诸如聚酰亚胺层、聚苯并恶唑(PBO)层或苯并环丁烯(BCB)层的聚合物层。根据本公开的一些实施例，金属晶种层24包括钛层和位于钛层上方的铜层。根据本公开的另一些实施例，金属晶种层24包括与LTHC涂覆材料22接触的铜层。
同样如图2所示，在金属晶种层24上方形成光刻胶26。然后使用光刻掩模(未示出)在光刻胶26上实施曝光。在随后的显影之后，在光刻胶26中形成开口28。通过开口28暴露金属晶种层24的一些部分。
接下来，如图3所示，通过电镀金属材料在开口28中形成金属柱32。因为金属柱32将穿过随后形成的最终封装件的包封材料(可以是模塑料)，所以金属柱32或称为通孔或模塑通孔。电镀金属材料可以是铜或铜合金。金属柱32的顶面低于光刻胶26的顶面，使得金属柱32的形状被开口28限定。金属柱32可以具有基本垂直并且直线的边缘。可选地，金属柱32在截面图中可以具有沙漏形状，其中，金属柱32的中部比相应的顶部和底部窄。
在随后的步骤中，去除光刻胶26，并且因此暴露金属晶种层24的下面部分。然后在蚀刻步骤中去除金属晶种层24的暴露部分，例如，在各向异性蚀刻步骤或各向同性蚀刻步骤中。剩余的晶种层24的边缘与相应的金属柱32下面的部分因此具有共同边界。图4示出了生成的金属柱32。在整个说明书中，金属晶种层24的剩余部分被看作是金属柱32的部分，并且没有被单独示出。金属柱32的俯视图形状包括但不限于圆形、矩形、六边形、八边形等。在金属柱32形成之后，暴露出LTHC涂覆材料22。
图5示出了器件管芯36的放置/连接。相应的步骤在图20所示的工艺流程图中示出为步骤406。器件管芯36通过管芯贴附膜(DAF)38附接至LTHC涂覆材料22，DAF38是将器件管芯36放置在LTHC涂覆材料22上之前预先附接在器件管芯36上方的粘合膜。相应地，在连接至LTHC涂覆材料22之前，DAF38和器件管芯36是结合的一体部件。器件管芯36可以包括半导体衬底，半导体衬底的背面(朝下的表面)与DAF38物理接触。器件管芯36在半导体衬底的正面(朝上的表面)处可以包括集成电路器件(诸如有源器件，例如包括晶体管，未示出)。根据本公开的一些实施例，器件管芯36为逻辑管芯，该逻辑管芯可以是中央处理单元(CPU)管芯、图形处理单元(GPU)管芯、移动应用管芯、微控制单元(MCU)管芯、输入输出(IO)管芯、基带(BB)管芯或者应用处理器(AP)管芯。因为载体20是在晶圆级，所以虽然示出了一个器件管芯36，但是LTHC涂覆材料22上方放置了多个相同的器件管芯36，并且可以布置为包括多个行和多个列的阵列。
根据一些示例性实施例，金属支柱42(诸如铜支柱)预先形成为器件管芯36的一部分，并且金属支柱42电连接至器件管芯36中的诸如晶体管(未示出)的集成电路器件。根据本公开的一些实施例，诸如聚合物的介电材料填充邻近的金属支柱42之间的间隙以形成顶介电层44。顶介电层44还可以包括覆盖并且保护金属支柱42的部分。根据本公开的一些实施例，聚合物层44可以由PBO或者聚酰亚胺形成。
接下来，器件管芯36和金属柱32被包封在包封材料48中，如图6所示。相应的步骤在图20所示的工艺流程图中示出为步骤408。包封材料48填充邻近的通孔32之间的间隙以及通孔32与器件管芯36之间的间隙。包封材料48可以包括模塑料、模制底部填充物、环氧树脂和/或树脂。包封材料48的顶面高于金属支柱42的顶端。当包封材料48由模塑料形成时，包封材料48可以包括基础材料和基础材料中的填充颗粒(未示出，参考图19C)，基础材料可以是聚合物、树脂、环氧树脂等。填充颗粒可以是SiO2、Al2O3、硅胶等介电颗粒，并且可以具有球形形状。此外，球形的填充颗粒可以具有多个不同的直径。模塑料中的填充颗粒和基础材料均可以与LTHC涂覆材料22物理接触，同样如图19C示意性所示。
在随后的步骤中，如图7所示，实施诸如化学机械抛光(CMP)步骤或者机械研磨步骤的平坦化步骤以减薄包封材料48和介电层44，直至通孔32和金属支柱42均暴露出来。相应的步骤在图20所示的工艺流程图中示出为步骤408。由于平坦化工艺，通孔32的顶端与金属支柱42的顶面基本上齐平(共面)，并且与包封材料48的顶面基本上共面。
图8至图12示出前侧重分布结构的形成。图8和图9示出重分布线(RDL)的第一层和相应的介电层的形成。参考图8，形成介电层50。相应的步骤在图20所示的工艺流程图中示出为步骤410。根据本公开的一些实施例，介电层50由诸如PBO、聚酰亚胺等的聚合物形成。形成方法包括涂覆流体形式的介电层50，并且然后固化介电层50。根据本公开的可选实施例，介电层50由诸如氮化硅、氧化硅等的无机介电材料形成。形成方法可以包括化学汽相沉积(CVD)、原子层沉积(ALD)、等离子体增强化学汽相沉积(PECVD)或者其他适用的沉积方法。然后形成开口52，例如通过光刻工艺。根据一些实施例，其中，介电层50由诸如PBO或聚酰亚胺的光敏材料形成，开口52的形成涉及使用光刻掩模(未示出)的曝光步骤和显影步骤。通过开口52暴露通孔32和金属支柱42。
接下来，参考图9，在介电层50上方形成RDL 54。相应的步骤在图20所示的工艺流程图中示出为步骤412。RDL 54包括形成在介电层50中以连接至金属支柱42和通孔32的孔54A，以及介电层50上方的金属迹线(金属线)54B。根据本公开的一些实施例，在电镀工艺中形成RDL 54(包括54A和54B)，电镀工艺包括沉积金属晶种层(未示出)、在金属晶种层上方形成并图案化光刻胶(未示出)、以及在金属晶种层上方电镀诸如铜和/或铝的金属材料。金属晶种层和电镀金属材料可以由相同的材料或者不同的材料形成。然后去除图案化的光刻胶，随后蚀刻金属晶种层预先由图案化的光刻胶覆盖的部分。虽然未示出，但是RDL 54从开口52延伸出的部分的顶面可以比RDL 54直接位于介电层50上方的部分的顶面凹进更低。
参考图10，根据本公开的一些实施例，在图9所示的结构上方形成介电层60，随后在介电层60中形成开口。因此通过开口暴露RDL 54的一些部分。形成介电层60使用的材料可以选自用于形成介电层50同样的备选材料，备选材料可以包括PBO、聚酰亚胺、BCB、或其他有机材料或无机材料。然后形成RDL 58。相应的步骤在图20所示的工艺流程图中示出为步骤414。RDL 58还包括延伸进介电层60的开口中以连接RDL 54的孔部分，以及直接位于介电层60上方的金属线部分。RDL 58的形成可以与RDL 54的形成相同，包括形成晶种层、形成图案化掩模、电镀RDL 58、并且然后去除图案化掩模和晶种层的不期望的部分。
图11示出在介电层60和RDL 58上方形成介电层62和RDL 64。相应的步骤在图20所示的工艺流程图中示出为步骤416。形成介电层62的材料可以选自用于形成介电层50和介电层60同样的备选材料组。RDL 64同样可由金属或金属合金形成，包括铝、铜、钨、或它们的合金。应当注意，在示出的示例性实施例中，虽然形成了3个RDL层(54、58和64)，但是封装件可以具有任意数量的RDL层，诸如一层、两层、或者多于三层。
根据一些示例性实施例，图12示出介电层66、凸块下金属(UBM)68、和电连接件70的形成。形成介电层66的材料可以选自用于形成介电层50、介电层60、介电层62和介电层66同样的备选材料组。例如，介电层66可以用PBO、聚酰亚胺、或BCB形成。在介电层66中形成开口以暴露下面的金属焊盘，在示出的实施例中金属焊盘是RDL 64的一部分。根据本公开的一些实施例，形成延伸进介电层66的开口中的UBM 68以连接RDL 64的金属焊盘。UBM 68可由镍、铜、钛或它们的多层形成。根据一些示例性实施例，UBM68包括钛层和位于钛层上方的铜层。
随后形成电连接件70。相应的步骤在图20所示的工艺流程图中示出为步骤418。形成电连接件70可以包括在UBM 68的暴露部分的上方放置焊球、以及然后回流焊球，并且因此电连接件70是焊料区域。根据本公开的可选实施例，形成电连接件70包括实施电镀步骤以在UBM 68上方形成焊料层、以及及然后回流焊料层。电连接件70还可包括非焊料金属支柱或者金属支柱和非焊料金属支柱上的焊帽，其也可通过电镀来形成。在整个说明书中，包括释放膜22的结构及上面结构的结合称为封装件100，封装件100是包括多个器件管芯36的复合晶圆(以下也称为复合晶圆100)。
接下来，参考图13，复合晶圆100放置在胶带74上，胶带74附接至框架76。根据本公开的一些实施例，电连接件70与胶带74接触。接下来，光78(或者其他类型的载热辐射源)投射在LTHC涂覆材料22上，并且光78穿过透明载体20。根据本公开的一些示例性实施例，光78是激光束，可以来回地在LTHC涂覆材料22上扫描，其中每次扫描实施在LTHC涂覆材料22的未扫描部分上。根据可选实施例，全部的LTHC涂覆材料22同时暴露在一个光照下，而不是来回地扫描。根据LTHC涂覆材料22的材料，例如可以使用紫外光投射在LTHC涂覆材料22上。
作为曝光(诸如激光扫描)的结果，载体20可以从LTHC涂覆材料22剥离，并且因此复合晶圆100与载体20分离(卸下)。相应的步骤在图20所示的工艺流程图中示出为步骤420。图14示出了生成的复合晶圆100。在曝光期间，LTHC涂覆材料22的顶部响应于曝光引入的热度而分解。在图14中用虚线示出了分解的部分。分解的部分是预先与载体20接触的部分(示出的顶部)，该部分受到光的热度影响。另一方面，LTHC涂覆材料22的下部没有接收到光或者接收到的光的热度不够。相应地，LTHC涂覆材料22的下部没有分解，并且因此在载体20剥离后保留下来。根据本公开的一些实施例，LTHC涂覆材料22分解前的总体厚度T1在大约1μm至大约2μm范围内。根据一些实施例，LTHC涂覆材料22的分解部分的厚度T2可以在大约0.3μm至大约1μm范围内。此外，LTHC涂覆材料22的分解部分的厚度T2与LTHC涂覆材料22的总体厚度T1的比值可以在大约0.3至大约0.5范围内。
LTHC涂覆材料22的分解部分的厚度T2受到光78的能级、曝光时间长度、以及光频率的影响。光78的能量越高，厚度T2会越大。因此，通过调整光78的能量可以选择适当的能量。在选择的能量下，全部LTHC涂覆材料22的顶部均被分解，载体20没有通过任何未分解部分与LTHC涂覆材料22粘附的部分被保留。另一方面，保留的LTHC涂覆材料22的未分解部分可以是覆盖层(blanket layer)，覆盖层不具有暴露下面通孔32、包封材料48、和DAF38的任何开口。根据本公开的一些示例性实施例，保留的LTHC涂覆材料22具有厚度T3，厚度T3可以在大约0.7μm至大约1.7μm的范围内。
根据本公开的一些实施例，LTHC涂覆材料22的顶面可以具有符合封装制造工艺的规范的平坦性。因此，不对LTHC涂覆材料22的顶面实施平坦化。然而，如果在载体20剥离之后，LTHC涂覆材料22具有的粗糙度高于规范规定的最大可接受粗糙度、并且高粗糙度可导致产量下降，那么可以实施化学机械抛光(CMP)或机械研磨以平坦LTHC涂覆材料22的顶面。平坦化去除LTHC涂覆材料22的顶面部分，而保留覆盖的底部完好无损。
参考图15，在LTHC涂覆材料22中形成开口72，并且因此暴露通孔32。相应的步骤在图20所示的工艺流程图中示出为步骤422。根据本公开的一些实施例，通过激光钻孔形成开口72，在激光钻孔期间，通过激光燃烧并分解直接位于通孔32上方的LTHC涂覆材料22的一些部分。根据本公开的可选实施例，通过光刻工艺中的蚀刻形成开口72。
根据本公开的一些实施例，在激光钻孔之后暴露钛层24A。如图3所示，钛层24A是晶种层24的保留部分。在随后的步骤中，实施蚀刻步骤以去除钛层，钛层在图15中示出为层24A。因为钛比铜具有更高的电阻率，所以通过去除钛层，暴露比钛层具有更低电阻率的通孔32的铜部分。因此，建立与通孔32具有更低电阻率的电连接。根据本公开的一些实施例，通过使用氟化氢(HF)溶液、磷酸、或HF和磷酸混合物的湿蚀刻实施钛层的蚀刻。蚀刻也可以用干蚀刻实施。
在钛层24A的蚀刻中，不蚀刻LTHC涂覆材料22。相应地，选择LTHC涂覆材料22的材料和钛层24A的蚀刻剂，使得蚀刻剂能够在蚀刻钛层24A时不损害LTHC涂覆材料22。
复合晶圆100包括多个彼此相同的封装件100’(参考图16)，其中每个封装件100’包括多个通孔32和一个器件管芯36。LTHC涂覆材料22跨越整个晶圆级封装件100。图16示出多个封装件200(示出了一个封装件200)接合至封装件100’，从而形成多个相同的层叠封装(PoP)结构/封装件300。相应的步骤在图20所示的工艺流程图中示出为步骤424。通过焊料区域80实施接合，焊料区域80使通孔32接合至上方的封装件200中的金属焊盘206。根据本公开的一些实施例，封装件200包括封装衬底204和器件管芯202，器件管芯202可以是诸如静态随机存取存储器(SRAM)管芯、动态随机存取存储器(DRAM)管芯等的存储器管芯。底部填充物208设置在封装件200和下面的封装件100之间的间隙内，并且然后被固化。
根据本公开的可选实施例，形成背面RDL(未示出)，并且封装件200接合至背面重分布结构的背面RDL上方，而不是直接通过开口72(图15)将封装件200接合至复合晶圆100。背面RDL因此会包括延伸进LTHC涂覆材料22的孔(未示出)、和位于LTHC涂覆材料22上方的金属线(未示出)。背面RDL如此命名是因为如果形成了背面RDL，那么该RDL位于器件管芯36的背面上。为了形成背面RDL，在复合晶圆100的下方放置载体(而不是胶带)作为形成背面RDL时的支撑。相应地，在背面RDL形成期间，电连接件70通过粘合膜(未示出)粘附于载体。
接下来，参考图17，实施切割(管芯锯切)工艺以将复合晶圆100分离为独立的、彼此相同的封装件300。切割可以在胶带74上实施。切割可以使用刀片来实施，或者可以使用激光做预切槽以形成凹槽、并且然后使用刀片由凹槽切开来实施。
图18示出分割后的封装件300通过焊料区域70接合至封装组件86。根据本公开的一些实施例，封装组件86是封装衬底，封装衬底可以是无芯衬底或者有芯衬底。根据本公开的另一些实施例，封装组件86是印刷电路板或者封装件。焊料区域70可以接合至封装组件86中的接合焊盘88。
图19A示出示例性封装件300的一些部分的俯视图，其中，为了简明示出了通孔32、LTHC涂覆材料22、和器件管芯36，而没有示出其他部件。根据本公开的一些实施例，通过激光束形式的激光实施LTHC涂覆材料22的分解。激光束窄于封装件300，并带有多个激光束扫描路径以覆盖整个封装件300(并且覆盖如图13所示的复合晶圆100)。多个激光束扫描的路径可稍微相互重叠以保证完全覆盖LTHC涂覆材料22，而没有不期望的未扫描的一些部分留下。与非重叠部分相比，重叠部分接收到双重扫描。根据本公开的一些实施例，双扫描区域中分解后的LTHC涂覆材料22的厚度大于单扫描区域中分解后的LTHC涂覆材料22的厚度。这使得LTHC涂覆材料22的顶面的一些部分比其他部分凹进更多。例如，图19A示意性示出了部分22A和部分22B，并且部分22B比部分22A凹进更多。部分22B和部分22A具有交替的布局，其中部分22A为单扫描部分，部分22B为双扫描部分。此外，部分22A和部分22B在俯视图中基本上是直线的。
根据本公开的一些示例性实施例，图19B示出LTHC涂覆材料22的截面图。截面图由图19A中的包括线19B-19B的平面处得到。还示出了部分22A和部分22B。还示出了部分22A的厚度T3A和部分22B的厚度T3B。厚度T3A大于厚度T3B。根据本公开的一些实施例，差值(T3A-T3B)大于大约0.1μm，且差值可以在大约0.1μm至大约0.5μm的范围内。相应地，在封装件300中，LTHC涂覆材料22具有厚度交替的部分。部分22A可以具有基本一样的宽度，部分22B可具有基本一样的宽度，并且部分22A的宽度大于部分22B的宽度。
部分22B(并且还可能部分22A)在截面图中可具有凹面形状，其中部分22B(或部分22A)的中间部分比部分22B/22A的边缘部分凹进更多。此外，凹面形状可以是弧形的。
图19C示出图17中区域84的放大视图。如图19C所示，包封材料48包括基础材料48A和基础材料48A中的填充颗粒48B。因为包封材料48包封在LTHC涂覆材料22上(如图6所示)，并且没有对包封材料48的与LTHC涂覆材料22接触的部分实施平坦化，所以与LTHC涂覆材料22接触的球形颗粒48B是圆形的，其中圆形表面与LTHC涂覆材料22接触。此外，在此界面上没有球形颗粒48B被部分地去除以得到与示出的基础材料48A的顶面共面的平坦表面。作为比较，在图7所示的步骤中包封材料48与介电层50接触的部分被平坦化。相应地，在平坦化期间部分与介电层50接触的球形颗粒48B被部分地切开，并且因此会得到与介电层50接触的基本上平坦的底面(而不是圆形底面)。
在上述的示例性实施例中，根据本公开的一些实施例论述了一些示例性的工艺和部件。还可以包括其他的部件和工艺。例如，可以包括测试结构以辅助3D封装或者3DIC器件的验证测试。例如，测试结构可以包括形成在重分布层或衬底上的测试焊盘以允许3D封装或者3DIC的测试、探针和/或探针卡的使用等。验证测试可以在中间结构上、也可以在最终结构上实施。另外，本公开的结构和方法可以与包含已知良好的管芯中间验证的测试算法结合使用，以增加产量并降低成本。
本公开的实施例具有一些有利的特征。在常规的工艺中，在用于形成通孔的晶种层形成之前，在LTHC涂层的顶部形成缓冲层(聚合物层)。这种工艺由于形成缓冲层而增加了制造成本。如果为了降低制造成本而不形成缓冲层，因为LTHC涂层在卸下载体时被去除，并且实施了等离子清洗步骤以去除残余的LTHC涂层，所以没有残余的LTHC涂层留下。这使得通孔和包封材料(模塑料)均暴露在焊料和底部填充物下，并且不存在将焊料/底部填充物与通孔/模塑料分离的缓冲层。相应地，由于应力在焊料和底部填充物之间的界面处产生分层。根据本公开的一些实施例，没有形成缓冲层，因此降低了制造成本。另一方面，在最终结构中留下了部分LTHC涂覆材料，该部分LTHC涂覆材料用作缓冲层。因此消除了分层问题。
根据本公开的一些实施例，一种方法，包括在载体上方形成释放膜、在释放膜上形成金属柱、将金属柱包封在包封材料中、在包封材料上实施平坦化以暴露金属柱、在包封材料和金属柱上方形成重分布结构、分解释放膜的第一部分以将释放膜的第二部分与载体分离、以及在释放膜中形成开口以暴露金属柱。在一个实施例中，该方法包括通过焊料区域使封装组件接合至金属柱，其中，焊料区域延伸至释放膜中以与金属柱接触。在一个实施例中，分解释放膜的第一部分通过在释放膜上投射激光束来实施。在一个实施例中，释放膜包括聚合物基础材料和碳黑颗粒。在一个实施例中，封装件还包括：在释放膜中形成开口之后，蚀刻钛层，并且钛层是金属柱的一部分；以及在蚀刻钛层之后，保留释放膜。在一个实施例中，在分解之前，释放膜的第一部分使释放膜的第二部分与载体分离，并且释放膜的第一部分与载体物理接触。在一个实施例中，释放膜的第一部分在分解之前具有第一厚度，并且释放膜在分解之前具有第二厚度，并且第一厚度与第二厚度的比在大约30％至大约50％的范围内。
根据本公开的一些实施例，一种方法，包括：在载体上涂覆LTHC涂覆材料；形成与LTHC涂覆材料接触的金属晶种层；在金属晶种层上方形成图案化的光刻胶，其中通过图案化的光刻胶中的开口暴露金属晶种层的一部分；在金属晶种层上方电镀金属柱；去除图案化的光刻胶；蚀刻金属晶种层以暴露LTHC涂覆材料；在涂覆材料上投射光以分解LTHC涂覆材料的第一部分，并且保留LTHC涂覆材料的第二部分，其中LTHC涂覆材料的第一部分与载体接触；剥离载体；以及形成穿过LTHC涂覆材料的第二部分的焊料区域。在一个实施例中，在剥离载体之后，LTHC涂覆材料的第二部分是覆盖层。在一个实施例中，该方法还包括在LTHC涂覆材料的第二部分中形成开口，其中，焊料区域延伸至开口中。在一个实施例中，通过激光钻孔形成开口。在一个实施例中，投射光包括用激光束在全部的LTHC涂覆材料上扫描。在一个实施例中，该方法还包括在剥离载体之后，在LTHC涂覆材料的第二部分上实施平坦化。在一个实施例中，该方法还包括在剥离载体之后且在形成焊料区域之前，蚀刻金属晶种层的保留部分的一部分。
根据本公开的一些实施例，一种封装件，包括包封材料；通孔，穿过包封材料；LTHC涂覆材料，接触通孔和包封材料；以及导电部件，穿过LTHC涂覆材料。在一个实施例中，LTHC涂覆材料配置为在光的热量下分解。在一个实施例中，导电部件包括焊料区域。在一个实施例中，封装件还包括器件管芯；以及管芯贴附膜，将器件管芯附接至LTHC涂覆材料，其中，器件管芯和管芯贴附膜被包封材料包封。在一个实施例中，LTHC涂覆材料包括聚合物和碳黑颗粒。在一个实施例中，LTHC涂覆材料包括布置为交替布局的第一多个部分和第二多个部分，并且第一多个部分比第二多个部分薄。
根据本公开的一些实施例，一种方法包括在载体上涂覆LTHC涂覆材料；在LTHC涂覆材料上放置器件管芯和管芯贴附膜；将器件管芯和管芯贴附膜包封在包封材料中；投射光，其中，光穿过载体以达到LTHC涂覆材料，并且其中LTHC涂覆材料的第一部分通过光被分解，以及在投射光之后保留LTHC涂覆材料的第二部分；将载体与LTHC涂覆材料的第二部分剥离。在一个实施例中，管芯贴附膜与LTHC涂覆材料直接接触。在一个实施例中，投射光包括投射激光束。在一个实施例中，扫描激光束以覆盖全部的LTHC涂覆材料。在一个实施例中，该方法包括在LTHC涂覆材料的第二部分中形成开口。在一个实施例中，形成开口包括实施激光钻孔。
根据本公开的一些实施例，一种封装件包括器件管芯；管芯贴附膜；LTHC涂覆材料，其中，管芯贴附膜位于器件管芯和LTHC涂覆材料之间且与器件管芯和LTHC涂覆材料接触；焊料区域，穿过LTHC涂覆材料；以及封装组件，位于器件管芯上方并与焊料区域接合。在一个实施例中，LTHC涂覆材料包括聚合物和碳黑颗粒。
根据本公开的一些实施例，一种封装件包括第一封装件，第一封装件包括：模塑料；LTHC涂覆材料，位于模塑料上方并与模塑料接触；以及焊料区域，穿过LTHC涂覆材料；第二封装件，位于第一封装件上方并且通过焊料区域与第一封装件接合；以及底部填充物，包围焊料区域并且与焊料区域接触，其中，底部填充物与LTHC涂覆材料接触。在一个实施例中，LTHC涂覆材料包括交替布置的第一条状部分和第二条状部分，其中，第一条状部分和第二条状部分具有凹面形状的顶面。
根据本申请的实施例，提供了一种形成封装件的方法，包括：在载体上方形成释放膜；在释放膜上形成金属柱；将金属柱包封在包封材料中；在包封材料上实施平坦化以暴露金属柱；在包封材料和金属柱上方形成重分布结构；分解释放膜的第一部分以将释放膜的第二部分与载体分离；以及在释放膜中形成开口以暴露金属柱。
根据本申请的实施例，还包括通过焊料区域使封装组件接合至金属柱，其中，焊料区域延伸至释放膜中以与金属柱接触。
根据本申请的实施例，分解释放膜的第一部分通过在释放膜上投射激光束来实施。
根据本申请的实施例，释放膜包括聚合物基础材料和碳黑颗粒。
根据本申请的实施例，还包括：在释放膜中形成开口之后，蚀刻钛层，并且钛层是金属柱的一部分；以及在蚀刻钛层之后，保留释放膜。
根据本申请的实施例，在分解之前，释放膜的第一部分使释放膜的第二部分与载体分离，并且释放膜的第一部分与载体物理接触。
根据本申请的实施例，释放膜的第一部分在分解之前具有第一厚度，并且释放膜在分解之前具有第二厚度，并且第一厚度与第二厚度的比在大约30％至大约50％的范围内。
根据本申请的实施例，提供了一种形成封装件的方法，包括：在载体上涂覆光热转换(LTHC)涂覆材料；形成与LTHC涂覆材料接触的金属晶种层；在金属晶种层上方形成图案化的光刻胶，其中通过图案化的光刻胶中的开口暴露金属晶种层的一部分；在金属晶种层上方电镀金属柱；去除图案化的光刻胶；蚀刻金属晶种层以暴露LTHC涂覆材料；在涂覆材料上投射光以分解LTHC涂覆材料的第一部分，并且保留LTHC涂覆材料的第二部分，其中LTHC涂覆材料的第一部分与载体接触；剥离载体；以及形成穿过LTHC涂覆材料的第二部分的焊料区域。
根据本申请的实施例，在剥离载体之后，LTHC涂覆材料的第二部分是覆盖层。
根据本申请的实施例，还包括：在LTHC涂覆材料的第二部分中形成开口，其中，焊料区域延伸至开口中。
根据本申请的实施例，通过激光钻孔形成开口。
根据本申请的实施例，投射光包括用激光束在全部的LTHC涂覆材料上扫描。
根据本申请的实施例，还包括：在剥离载体之后，在LTHC涂覆材料的第二部分上实施平坦化。
根据本申请的实施例，还包括：在剥离载体之后且在形成焊料区域之前，蚀刻金属晶种层的保留部分的一部分。
根据本申请的实施例，提供了一种封装件，包括：包封材料；通孔，穿过包封材料；光热转换(LTHC)涂覆材料，接触通孔和包封材料；以及导电部件，穿过LTHC涂覆材料。
根据本申请的实施例，LTHC涂覆材料配置为在光的热量下分解。
根据本申请的实施例，导电部件包括焊料区域。
根据本申请的实施例，还包括：器件管芯；以及管芯贴附膜，将器件管芯附接至LTHC涂覆材料，其中，器件管芯和管芯贴附膜被包封材料包封。
根据本申请的实施例，LTHC涂覆材料包括聚合物和碳黑颗粒。
根据本申请的实施例，LTHC涂覆材料包括布置为交替布局的第一多个部分和第二多个部分，并且第一多个部分比第二多个部分薄。
以上论述了若干实施例的特征，使得本领域技术人员可以更好地理解本发明的各方面。本领域技术人员应该理解，他们可以容易地使用本发明作为基础来设计或修改用于实施与本文所介绍的实施例相同的目的和/或实现相同优点的其他工艺和结构。本领域技术人员也应该意识到，这种等同构造并不背离本发明的精神和范围，并且在不背离本发明的精神和范围的情况下，本文中他们可以做出多种变化、替换以及改变。

Claims (20)

1.一种形成封装件的方法，包括：
在载体上方形成释放膜；
在所述释放膜上形成金属柱；
将所述金属柱包封在包封材料中；
在所述包封材料上实施平坦化以暴露所述金属柱；
在所述包封材料和所述金属柱上方形成重分布结构；
分解所述释放膜的第一部分以将所述释放膜的第二部分与所述载体分离，其中，所述释放膜的所述第一部分和所述释放膜的所述第二部分由相同的材料形成；以及
在所述释放膜中形成开口以暴露所述金属柱。
2.根据权利要求1所述的方法，还包括通过焊料区域使封装组件接合至所述金属柱，其中，所述焊料区域延伸至所述释放膜中以与所述金属柱接触。
3.根据权利要求1所述的方法，其中，分解所述释放膜的所述第一部分通过在所述释放膜上投射激光束来实施。
4.根据权利要求1所述的方法，其中，所述释放膜包括聚合物基础材料和碳黑颗粒。
5.根据权利要求1所述的方法，还包括：在所述释放膜中形成所述开口之后，蚀刻钛层，并且所述钛层是所述金属柱的一部分；以及在蚀刻所述钛层之后，保留所述释放膜。
6.根据权利要求1所述的方法，其中，在所述分解之前，所述释放膜的所述第一部分使所述释放膜的所述第二部分与所述载体分离，并且所述释放膜的所述第一部分与所述载体物理接触。
7.根据权利要求1所述的方法，其中，所述释放膜的所述第一部分在所述分解之前具有第一厚度，并且所述释放膜在所述分解之前具有第二厚度，并且所述第一厚度与所述第二厚度的比在30％至50％的范围内。
8.一种形成封装件的方法，包括：
在载体上涂覆光热转换(LTHC)涂覆材料；
形成与所述光热转换涂覆材料接触的金属晶种层；
在所述金属晶种层上方形成图案化的光刻胶，其中通过所述图案化的光刻胶中的开口暴露所述金属晶种层的一部分；
在所述金属晶种层上方电镀金属柱；
去除所述图案化的光刻胶；
蚀刻所述金属晶种层以暴露所述光热转换涂覆材料；
在涂覆材料上投射光以分解所述光热转换涂覆材料的第一部分，并且保留所述光热转换涂覆材料的第二部分，其中所述光热转换涂覆材料的所述第一部分与所述载体接触，并且所述光热转换涂覆材料的所述第二部分能够被光分解；
剥离所述载体；以及
形成穿过所述光热转换涂覆材料的所述第二部分的焊料区域。
9.根据权利要求8所述的方法，其中，在剥离所述载体之后，所述光热转换涂覆材料的所述第二部分是覆盖层。
10.根据权利要求8所述的方法，还包括：
在所述光热转换涂覆材料的所述第二部分中形成开口，其中，所述焊料区域延伸至所述开口中。
11.根据权利要求10所述的方法，其中，通过激光钻孔形成所述开口。
12.根据权利要求8所述的方法，其中，所述投射光包括用激光束在全部的所述光热转换涂覆材料上扫描。
13.根据权利要求8所述的方法，还包括：在剥离所述载体之后，在所述光热转换涂覆材料的所述第二部分上实施平坦化。
14.根据权利要求8所述的方法，还包括：在剥离所述载体之后且在形成所述焊料区域之前，蚀刻所述金属晶种层的保留部分的一部分。
15.一种封装件，包括：
包封材料；
通孔，穿过所述包封材料；
光热转换(LTHC)涂覆材料，接触所述通孔和所述包封材料，其中，所述光热转换涂覆材料配置为在光的热量下分解；以及
导电部件，穿过所述光热转换涂覆材料。
16.根据权利要求15所述的封装件，其中，所述光热转换涂覆材料配置为通过激光束的激光分解。
17.根据权利要求15所述的封装件，其中，所述导电部件包括焊料区域。
18.根据权利要求15所述的封装件，还包括：
器件管芯；以及
管芯贴附膜，将所述器件管芯附接至所述光热转换涂覆材料，其中，所述器件管芯和所述管芯贴附膜被所述包封材料包封。
19.根据权利要求15所述的封装件，其中，所述光热转换涂覆材料包括聚合物和碳黑颗粒。
20.根据权利要求15所述的封装件，其中，所述光热转换涂覆材料包括布置为交替布局的第一多个部分和第二多个部分，并且所述第一多个部分比所述第二多个部分薄。
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