TW201906033A - 封裝結構及其製造方法 - Google Patents

封裝結構及其製造方法

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Publication number
TW201906033A
TW201906033A TW106135864A TW106135864A TW201906033A TW 201906033 A TW201906033 A TW 201906033A TW 106135864 A TW106135864 A TW 106135864A TW 106135864 A TW106135864 A TW 106135864A TW 201906033 A TW201906033 A TW 201906033A
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TW
Taiwan
Prior art keywords
light
coating material
release film
heat conversion
conversion coating
Prior art date
Application number
TW106135864A
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English (en)
Other versions
TWI673804B (zh
Inventor
鄒賢儒
吳志偉
林俊成
王卜
盧思維
施應慶
Original Assignee
台灣積體電路製造股份有限公司
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Publication of TW201906033A publication Critical patent/TW201906033A/zh
Application granted granted Critical
Publication of TWI673804B publication Critical patent/TWI673804B/zh

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Abstract

一種封裝結構的製造方法包括：在載體之上形成離型膜；在所述離型膜上形成金屬柱；將所述金屬柱包封於包封材料中；對所述包封材料執行平坦化，以暴露出所述金屬柱；在所述包封材料及所述金屬柱之上形成重佈線結構；分解所述離型膜的第一部分，以將所述離型膜的第二部分自所述載體分離；以及在所述離型膜中形成開口，以暴露出所述金屬柱。

Description

封裝結構及其製造方法
隨著半導體技術的演進，半導體晶片/晶粒逐漸縮小。與此同時，需要在半導體晶粒中整合更多的功能。因此，半導體晶粒需要將越來越多的輸入/輸出（input/output，I/O）接墊封裝於更小的區域中，且輸入/輸出接墊的密度隨時間而急劇增加。因此，半導體晶粒的封裝變得更加困難，此對封裝的良率造成不利影響。
習知封裝技術可劃分成兩個類別。在第一類別中，在鋸切晶圓上的晶粒之前封裝所述晶粒。此種封裝技術具有一些有利特徵，例如具有更大的產量及更低的成本。此外，需要更少的底部填充膠或模塑化合物。然而，此種封裝技術亦具有缺點。由於晶粒的尺寸逐漸縮小，且相應封裝可僅為扇入型封裝（fan-in type package）。在所述扇入型封裝中每一晶粒的輸入/輸出接墊被限制於位於相應晶粒的表面正上方的區域。由於晶粒的面積有限，因此輸入/輸出接墊的數目因所述輸入/輸出接墊的間距（pitch）的限至而受限。若欲減小接墊的間距，則可能出現焊料橋（solder bridge）。另外，根據固定的球尺寸要求，焊料球必須具有特定大小，此進而會限制可在晶粒的表面上包裝的焊料球的數目。
在封裝的另一類別中，是在封裝晶粒之前自所述晶圓鋸切出晶粒。此封裝技術的有利特徵是可形成扇出型封裝（fan-out package），此意指晶粒上的輸入/輸出接墊可被重佈線至較所述晶粒大的區域，且因此在晶粒的表面上所包裝的輸入/輸出接墊的數目可增大。此種封裝技術的另一有利特徵是封裝「已知合格晶粒（known-good-die）」並捨棄缺陷晶粒，且因此不會在缺陷晶粒上浪費成本及精力。
以下揭露內容提供諸多不同的實施例或實例以用於實作本發明的不同特徵。以下闡述組件及排列的具體實例以簡化本揭露內容。當然，該些僅為實例且不旨在進行限制。舉例而言，以下說明中將第一特徵形成於第二特徵「之上」或第二特徵「上」可包括其中第一特徵及第二特徵被形成為直接接觸的實施例，且亦可包括其中第一特徵與第二特徵之間可形成有附加特徵、進而使得所述第一特徵與所述第二特徵可能不直接接觸的實施例。另外，本發明可能在各種實例中重複使用參考編號及/或字母。此種重複使用是出於簡潔及清晰的目的，但自身並不表示所論述的各種實施例及/或配置之間的關係。
此外，為易於說明，本文中可使用例如「在...之下」、「在...下方」、「下部」、「在…之上」、「上部」等空間相對性用語來闡述圖中所示一個元件或特徵與另一（其他）元件或特徵的關係。除圖中所繪示的定向之外，所述空間相對性用語旨在涵蓋裝置在使用或操作時的不同定向。設備可被另外定向（旋轉90度或具有其他定向），且本文所用的空間相對性用語可相應地同樣作出解釋。
根據各種示例性實施例提供一種積體扇出型（Integrated Fan-Out，InFO）封裝及其形成方法。根據一些實施例說明形成所述積體扇出型封裝的中間階段。對一些實施例的一些變型進行論述。在各視圖及說明性實施例通篇中，相似的參考編號用於表示相似的元件。
圖1至圖18根據一些實施例繪示封裝的形成過程的各中間階段的剖視圖。圖1至圖18所示步驟亦示意性地示於圖20所示製程流程400中。
參考圖1，提供載體20，且在載體20上塗佈離型膜22。相應步驟被示為圖20所示製程流程中的步驟402。載體20是由透明材料形成，且可為玻璃載體、陶瓷載體、有機載體等。載體20可具有圓的俯視形狀，且可具有矽晶圓的大小。舉例而言，載體20可具有8英吋的直徑、12英吋的直徑等。離型膜22在實體上接觸載體20的頂表面。離型膜22可由光-熱轉換（Light To Heat Conversion，LTHC）塗佈材料形成。可藉由塗佈將離型膜22施加至載體20上。根據本發明的一些實施例，光-熱轉換塗佈材料能夠在光/輻射（例如雷射）的加熱下分解，且因此可自形成於所述光-熱轉換塗佈材料上的結構剝除載體20。根據本發明的一些實施例，光-熱轉換塗佈材料（離型膜22）包括碳黑（碳顆粒）、溶劑、矽填料、及/或環氧樹脂。環氧樹脂可包含聚醯亞胺或另一聚合物（例如丙烯酸）。聚醯亞胺（若包含於光-熱轉換塗佈材料中）不同於用於微影的典型聚醯亞胺，此乃因聚醯亞胺不再具有感光性，且可能無法藉由曝光（photo exposure）及顯影來移除。根據本發明的一些示例性實施例，光-熱轉換塗佈材料（離型膜22）的厚度可介於約1微米與約2微米範圍內。應理解，本發明的說明通篇中所列舉的值為實例，且可變為不同的值。可以可流動的形式來塗佈光-熱轉換塗佈材料（離型膜22）且接著例如在紫外（ultra-violet，UV）光條件下進行固化。光-熱轉換塗佈材料（離型膜22）為均質材料，且整個光-熱轉換塗佈材料（離型膜22）具有相同的組成。
圖2至圖4說明金屬柱32的形成。相應步驟被示為圖20中所示製程流程中的步驟404。在本說明通篇中，金屬柱32作為另一選擇被稱作穿孔，乃因金屬柱32穿透過隨後設置的包封材料。
參考圖2，例如藉由物理氣相沈積（Physical Vapor Deposition，PVD）來形成金屬晶種層24。根據本發明的一些實施例，不在光-熱轉換塗佈材料（離型膜22）與金屬晶種層24之間形成介電層，且因此金屬晶種層24在實體上接觸光-熱轉換塗佈材料（離型膜22）。舉例而言，在金屬晶種層24與光-熱轉換塗佈材料（離型膜22）之間不存在聚合物層，例如聚醯亞胺層、聚苯並噁唑（polybenzoxazole，PBO）層或苯並環丁烯（benzocyclobutene，BCB）層。根據本發明的一些實施例，金屬晶種層24包括鈦層及位於所述鈦層之上的銅層。根據本發明的替代實施例，金屬晶種層24包括接觸光-熱轉換塗佈材料（離型膜22）的銅層。
亦如圖2所示，在金屬晶種層24之上形成光阻26。接著使用微影罩幕（圖中未示出）對光阻26執行曝光（light-exposure）。在後續顯影之後，在光阻26中形成開口28。經由開口28暴露出金屬晶種層24的一些部分。
接下來，如圖3中所示，藉由在開口28中鍍覆金屬材料來形成金屬柱32。金屬柱32作為另一選擇被稱為穿孔或模塑通孔，此乃因金屬柱32在最終封裝中將穿過隨後形成的包封材料（其可為模塑化合物）。所鍍覆金屬材料可為銅或銅合金。金屬柱32的頂表面低於光阻26的頂表面，因而使得金屬柱32的形狀受開口28限制。金屬柱32可具有實質上垂直的且筆直的邊緣。作為另一選擇，金屬柱32可在剖視圖中具有沙漏斗（sand timer）的形狀，其中金屬柱32的中間部分窄於相應的頂部部分及底部部分。
在後續步驟中，移除光阻26，且因此暴露出金屬晶種層24的下伏部分。接著在蝕刻步驟中（例如在非等向性或等向性蝕刻步驟中）移除金屬晶種層24的被暴露部分。剩餘的晶種層24的邊緣因此與金屬柱32的相應上覆部分共端（co-terminus）。所得金屬柱32示於圖4中。在本說明通篇中，將金屬晶種層24的剩餘部分視作金屬柱32的部分，且可不再予以單獨說明。金屬柱32的俯視形狀包括但不限於圓形、矩形、六邊形、八邊形等。在形成金屬柱32之後，可暴露出光-熱轉換塗佈材料（離型膜22）。
圖5說明裝置晶粒36的放置/附接。相應步驟被示為圖20所示製程流程中的步驟406。藉由晶粒貼合膜（Die-Attach Film，DAF）38將裝置晶粒36附接至光-熱轉換塗佈材料（離型膜22），晶粒貼合膜38是在將裝置晶粒36放置於光-熱轉換塗佈材料（離型膜22）上之前預先貼合於裝置晶粒36上的黏合劑膜。因此，晶粒貼合膜38及裝置晶粒36在貼合至光-熱轉換塗佈材料（離型膜22）之前組合地為一積體件（integrated piece）。裝置晶粒36可包括半導體基底，其具有實體上接觸晶粒貼合膜38的背面（面朝下的表面）。裝置晶粒36可包括位於半導體基底的正面（面朝上的表面）處的積體電路裝置（例如主動裝置，包括例如是電晶體（圖中未示出））。根據本發明的一些實施例，裝置晶粒36為邏輯晶粒，其可為中央處理單元（Central Processing Unit，CPU）晶粒、圖形處理單元（Graphic Processing Unit，GPU）晶粒、行動應用晶粒、微控制單元（Micro Control Unit，MCU）晶粒、輸入-輸出（input-output，IO）晶粒、基頻（BaseBand，BB）晶粒、或應用處理器（Application processor，AP）晶粒。由於載體20為晶圓級，因而儘管示出一個裝置晶粒36，然而在光-熱轉換塗佈材料（離型膜22）之上放置有多個相同的裝置晶粒36，且可將所述多個相同的裝置晶粒36配置為包括多個列及多個行的陣列。
根據一些示例性實施例，預形成金屬柱42（例如銅柱）來作為裝置晶粒36的部分，且將金屬柱42電性耦合至積體電路裝置，例如裝置晶粒36中的電晶體（圖中未示出）。根據本發明的一些實施例，介電材料（例如聚合物）填充相鄰金屬柱42之間的間隙以形成頂部介電層44。頂部介電層44亦可包括覆蓋並保護金屬柱42的一部分。根據本發明的一些實施例，聚合物層（頂部介電層44）可由聚苯並噁唑或聚醯亞胺形成。
接下來，如圖6中所示，將裝置晶粒36及金屬柱32包封於包封材料48中。相應步驟被示為圖20中所示製程流程中的步驟408。包封材料48填充相鄰穿孔（金屬柱32）之間的間隙及穿孔（金屬柱32）與裝置晶粒36之間的間隙。包封材料48可包括模塑化合物、模塑底部填充膠、環氧樹脂、及/或樹脂。包封材料48的頂表面高於金屬柱42的頂端。包封材料48當由模塑化合物形成時，可包含基材及位於所述基材中的填料顆粒（圖中未示出，參考圖19C），所述基材可為聚合物、樹脂、環氧樹脂等。填料顆粒可為SiO2 、Al2 O3 、矽石等的介電顆粒，且可具有球體形狀。此外，球形填料顆粒可具有多個不同的直徑。亦如圖19C示意性所示，模塑化合物中的填料顆粒及基材兩者可在實體上接觸光-熱轉換塗佈材料（離型膜22）。
在下一步驟中，如圖7中所示，執行平坦化步驟（例如化學機械研磨（Chemical Mechanical Polish，CMP）步驟或機械磨削（mechanical grinding）步驟）來薄化包封材料48及介電層44，直至完全暴露出穿孔（金屬柱32）及金屬柱42。相應步驟亦作為步驟408說明於圖20中所示製程流程中。基於所述平坦化製程，穿孔（金屬柱32）的頂端與金屬柱42的頂表面實質上齊平（共面），且與包封材料48的頂表面實質上共面。
圖8至圖12說明前側重佈線結構的形成。圖8及圖9說明第一層重佈線（Redistribution Line，RDL）及相應介電層的形成。參照圖8，形成介電層50。相應步驟作為步驟410說明於圖20中所示製程流程中。根據本發明的一些實施例，介電層50是由例如聚苯並噁唑、聚醯亞胺等聚合物形成。形成方法包括：以可流動的形式塗佈介電層50，且接著對介電層50進行固化。根據本發明的替代實施例，介電層50是由例如氮化矽、氧化矽等無機介電材料形成。形成方法可包括化學氣相沈積（Chemical Vapor Deposition，CVD）、原子層沈積（Atomic Layer Deposition，ALD）、電漿增強型化學氣相沈積（Plasma-Enhanced Chemical Vapor Deposition，PECVD）、或其他適用的沈積方法。接著例如藉由微影製程（photo lithography process）來形成開口52。根據其中介電層50是由感光材料（例如聚苯並噁唑或聚醯亞胺）形成的一些實施例，形成開口52涉及到利用微影罩幕（圖中未示出）來進行曝光、以及顯影步驟。經由開口52暴露出穿孔（金屬柱32）及金屬柱42。
接下來，參考圖9，在介電層50之上形成重佈線54。相應步驟被示為圖20中所示製程流程中的步驟412。重佈線54包括介層窗54A以及位於介電層50之上的金屬跡線（金屬線）54B，介層窗54A形成於介電層50中以連接至金屬柱42及穿孔（金屬柱32）。根據本發明的一些實施例，在鍍覆製程中形成重佈線54（包括介層窗54A及金屬跡線54B），所述鍍覆製程包括沈積金屬晶種層（圖中未示出）、在所述金屬晶種層之上形成光阻（圖中未示出）並將所述光阻圖案化、及在所述金屬晶種層之上鍍覆例如銅及/或鋁等金屬材料。金屬晶種層及所鍍覆金屬材料可由相同材料或不同材料形成。接著移除圖案化光阻，然後對金屬晶種層的先前被所述圖案化光阻覆蓋的部分進行蝕刻。儘管圖中未示出，然而重佈線54的自開口52生長的部分的頂表面可凹陷至低於重佈線54的位於介電層50正上方的部分。
參照圖10，根據本發明的一些實施例，在圖9中所示結構之上形成介電層60，隨後在介電層60中形成開口。因此經由所述開口暴露出重佈線54的一些部分。可使用選自用於形成介電層50的相同候選材料的材料來形成介電層60，所述候選材料可包括聚苯並噁唑、聚醯亞胺、苯並環丁烯、或者其他有機或無機材料。然後形成重佈線58。相應步驟被示為圖20中所示製程流程中的步驟414。重佈線58亦包括介層窗部分及位於介電層60正上方的金屬線部分，介層窗部分延伸至介電層60中的開口中以接觸重佈線54。重佈線58的形成可相同於重佈線54的形成，其包括：形成晶種層、形成圖案化罩幕、對重佈線58進行鍍覆、以及然後移除圖案化罩幕及晶種層的所不需要的部分。
圖11說明在介電層60及重佈線58之上形成介電層62及重佈線64。相應步驟被示為圖20中所示製程流程中的步驟416。介電層62可由選自用於形成介電層50及60的同一組候選材料的材料形成。重佈線64亦可由金屬或金屬合金形成，所述金屬或金屬合金包括鋁、銅、鎢、或其合金。應理解，儘管在所示示例性實施例中，形成有三層重佈線（重佈線54、重佈線58、及重佈線64），然而封裝可具有任何數目的重佈線層，例如一個層、兩個層、或多於三個層。
圖12說明根據一些示例性實施例的介電層66、凸塊下金屬（Under-Bump Metallurgy，UBM）68、及電性連接件70的形成。介電層66可由選自用於形成介電層50、介電層60、介電層62及介電層66的同一組候選材料的材料形成。舉例而言，可使用聚苯並噁唑、聚醯亞胺、或苯並環丁烯來形成介電層66。在介電層66中形成開口以暴露出下伏金屬接墊，所述下伏金屬接墊在說明性示例性實施例是重佈線64的部分。根據本發明的某一實施例，將凸塊下金屬68形成為延伸至介電層66中的開口中以接觸重佈線64中的金屬接墊。凸塊下金屬68可由鎳、銅、鈦、或其多層形成。根據一些示例性實施例，凸塊下金屬68包括鈦層及位於所述鈦層之上的銅層。
接著形成電性連接件70。相應步驟被示為圖20中所示製程流程中的步驟418。形成電性連接件70可包括：在凸塊下金屬68的被暴露部分上放置焊料球，且接著對所述焊料球進行回焊，並且因此電性連接件70為焊料區。根據本發明的替代實施例，形成電性連接件70包括：執行鍍覆步驟以在凸塊下金屬68之上形成焊料層，且接著對所述焊料層進行回焊。電性連接件70亦可包括亦可藉由鍍覆來形成的非焊料金屬柱、或金屬柱及位於非焊料金屬柱之上的焊料頂蓋。在本說明通篇中，將包括離型膜22的結構與上覆結構組合起來稱作封裝100，封裝100是包括多個裝置晶粒36的複合晶圓（且在下文中亦被稱作複合晶圓）。
接下來，參考圖13，將複合晶圓（封裝100）放置於貼合至框架76的膠帶74上。根據本發明的一些實施例，電性連接件70與膠帶74接觸。接下來，在光-熱轉換塗佈材料（離型膜22）上投射光78（或其他類型的載熱輻射源），且使光78穿透過透明載體20。根據本發明的一些示例性實施例，光78為雷射束，其可在光-熱轉換塗佈材料（離型膜22）上來回掃描，其中每一掃描是在光-熱轉換塗佈材料（離型膜22）的未經掃描的部分上執行。根據替代實施例，同時將整個光-熱轉換塗佈材料（離型膜22）暴露至一次曝光，而非來回掃描。舉例而言，端視光-熱轉換塗佈材料（離型膜22）的材料而定，可使用紫外光投射於光-熱轉換塗佈材料（離型膜22）上。
作為曝光（例如雷射掃描）的結果，可自光-熱轉換塗佈材料（離型膜22）剝離載體20，且因此複合晶圓（封裝100）被自載體20剝落（拆除）。相應步驟被示為圖20中所示製程流程中的步驟420。在圖14中示出所得複合晶圓（封裝100）。在曝光期間，光-熱轉換塗佈材料（離型膜22）因應於由曝光引起的加熱而分解。已分解部分在圖14中使用虛線示出。已分解部分是先前與載體20接觸的部分（所示頂部部分），所述部分經歷光的加熱。另一方面，光-熱轉換塗佈材料（離型膜22）的下部部分不接收光，抑或所接收的光的加熱不充分。因此，光-熱轉換塗佈材料（離型膜22）的下部部分不會分解，且因此在載體已被剝離之後亦會留存。根據本發明的一些實施例，在分解之前的光-熱轉換塗佈材料（離型膜22）的總厚度T1處於約1微米與約2微米之間的範圍內。根據一些示例性實施例，光-熱轉換塗佈材料（離型膜22）的已分解部分的厚度T2可介於約0.3微米至約1微米範圍內。此外，光-熱轉換塗佈材料（離型膜22）的已分解部分的厚度T2對總厚度T1的比率可介於約0.3與約0.5之間的範圍內。
光-熱轉換塗佈材料（離型膜22）的已分解部分的厚度T2受光78的能階、曝光的時間週期、及光的頻率影響。光78的能量愈高，厚度T2將愈大。因此，藉由調整光78的能量，可選擇適當的能量。在所選擇能量條件下，整個光-熱轉換塗佈材料（離型膜22）的頂部部分被分解，且載體20的任何部分均不因任何未分解部分而保持黏合至光-熱轉換塗佈材料（離型膜22）。另一方面，光-熱轉換塗佈材料（離型膜22）的剩餘的未分解部分可為毯覆層，而無任何用於暴露出下伏穿孔（金屬柱32）、包封材料48及晶粒貼合膜38的開口。根據本發明的一些示例性實施例，剩餘的光-熱轉換塗佈材料（離型膜22）具有厚度T3，厚度T3可處於約0.7微米與約1.7微米之間的範圍內。
根據本發明的一些實施例，光-熱轉換塗佈材料（離型膜22）的頂表面可具有共面性（co-planarity），以滿足封裝的製造製程的規範。因此，將不對光-熱轉換塗佈材料（離型膜22）的頂表面執行平坦化。然而，若在載體20被剝離之後，光-熱轉換塗佈材料（離型膜22）的粗糙度高於由規範所規定的可接受的最大粗糙度、且高的粗糙度可造成良率降低，則可執行化學機械研磨（CMP）或機械磨削來平整光-熱轉換塗佈材料（離型膜22）的頂表面。所述平坦化會移除光-熱轉換塗佈材料（離型膜22）的頂表面部分，同時使毯覆底部部分保持完整。
參考圖15，在光-熱轉換塗佈材料（離型膜22）中形成開口72，且因此暴露出穿孔（金屬柱32）。相應步驟被示為圖20中所示製程流程中的步驟422。根據本發明的一些實施例，藉由雷射鑽孔來形成開口72，在雷射鑽孔期間光-熱轉換塗佈材料（離型膜22）的位於穿孔（金屬柱32）正上方的一些部分被雷射燃燒並分解。根據本發明的替代實施例，藉由微影製程中的蝕刻來形成開口72。
根據本發明的一些實施例，在雷射鑽孔之後暴露出鈦層24A。鈦層24A為圖3所示金屬晶種層24的剩餘部分。在下一步驟中，執行蝕刻步驟以移除鈦層，所述鈦層在圖15中被示出為層24A。由於鈦具有較銅高的電阻率，因此藉由移除鈦層，暴露出電阻率較鈦層低的穿孔（金屬柱32）的銅部分。因此，可以較低電阻建立與穿孔（金屬柱32）的電性連接。根據本發明的一些實施例，藉由使用氟化氫（hydrogen fluoride，HF）溶液、磷酸、或氟化氫與磷酸的混合物進行濕式蝕刻來對鈦層執行蝕刻。亦可利用乾式蝕刻來執行蝕刻。
在對鈦層24A進行蝕刻時，光-熱轉換塗佈材料（離型膜22）不被蝕刻。因此，對光-熱轉換塗佈材料（離型膜22）的材料及鈦層24A的蝕刻劑進行選擇，以使得所述蝕刻劑在能夠蝕刻鈦層24A的同時，不會侵蝕光-熱轉換塗佈材料（離型膜22）。
複合晶圓（封裝100）包括彼此相同的多個封裝100’（參考圖16），其中封裝100’中的每一者包括多個穿孔（金屬柱32）及一個裝置晶粒36。光-熱轉換塗佈材料（離型膜22）跨越整個晶圓級封裝100。圖16與圖17說明將多個封裝200（其中示出一個封裝200）結合至封裝100’上，藉此形成多個相同的層疊式封裝（Package-on-Package，PoP）結構/封裝300。相應步驟被示為圖20中所示製程流程中的步驟424。藉由焊料區80來執行所述結合，焊料區80會將穿孔（金屬柱32）接合至上伏封裝200中的金屬接墊206。根據本發明的一些實施例，封裝200包括封裝基底204及一（或多個）裝置晶粒202，裝置晶粒202可為例如靜態隨機存取記憶體（Static Random Access Memory，SRAM）晶粒、動態隨機存取記憶體（Dynamic Random Access Memory，DRAM）晶粒等記憶體晶粒。亦將底部填充膠208分配至封裝200與下伏封裝100’之間的間隙中並進行固化。
根據本發明的替代實施例，形成背側重佈線（圖中未示出）且將封裝200結合於背側重佈線結構中的背側重佈線之上，而非經由開口72（圖15）直接將封裝200結合至複合晶圓（封裝100）。背側重佈線因此將包括延伸至光-熱轉換塗佈材料（離型膜22）中的介層窗（圖中未示出）、以及位於光-熱轉換塗佈材料（離型膜22）之上的金屬線（圖中未示出）。背側重佈線之所以如此命名，乃因該些重佈線（若形成）將位於裝置晶粒36的背側上。為了形成背側重佈線，可在複合晶圓（封裝100）之下放置載體而非膠帶，以在形成背側重佈線時作為支撐。因此，在形成背側重佈線期間藉由黏合劑膜（圖中未示出）將電性連接件70黏合至載體。
接下來，參考圖17，執行單體化（晶粒鋸切）製程以將複合晶圓（封裝100）分離成彼此相同的單獨的封裝300。可對膠帶74執行單體化。所述單體化可使用刀片來執行或可使用雷射來執行以進行預先開槽，進而形成溝槽，且接著使用刀片切穿所述溝槽。
圖18說明藉由焊料區（電性連接件70）將經單體化封裝300結合至封裝組件86。根據本發明的一些實施例，封裝組件86為封裝基底，其可為無核心的基底或具有核心的基底。根據本發明的其他實施例，封裝組件86為印刷電路板或封裝。可將焊料區（電性連接件70）結合至封裝組件86中的結合接墊88。
圖19A繪示示例性封裝300的一些部分的俯視圖，其中示出穿孔（金屬柱32）、光-熱轉換塗佈材料（離型膜22）、及裝置晶粒36，而為簡明起見，未示出其他特徵。根據本發明的一些實施例，藉由雷射（其呈雷射束的形式）來執行光-熱轉換塗佈材料（離型膜22）的分解。雷射束窄於封裝300，且需要多個雷射束掃描路徑來覆蓋整個封裝300（並覆蓋圖13所示複合晶圓（封裝100））。所述多個雷射束的掃描路徑可彼此略微交疊，以確保完全覆蓋光-熱轉換塗佈材料（離型膜22）而不會不利地使一些部分未被掃描。交疊部分相較於非交疊部分接收雙重掃描。根據本發明的一些實施例，雙重掃描區中的已分解光-熱轉換塗佈材料（離型膜22）的厚度大於單一掃描區中的已分解光-熱轉換塗佈材料（離型膜22）的厚度。此會使光-熱轉換塗佈材料（離型膜22）的頂表面的一些部分較其他部分更為凹陷。舉例而言，圖19A示意性地說明部分22A及較部分22A更為凹陷的部分22B。部分22B及部分22A具有交替佈局，其中部分22A為單一掃描部分，而部分22B為雙重掃描部分。此外，部分22A及部分22B可在俯視圖中實質上為筆直的。
圖19B說明根據本發明一些示例性實施例的光-熱轉換塗佈材料（離型膜22）的剖視圖。剖視圖是自圖19A中包含線19B-19B的平面獲得。亦示出部分22A及部分22B。亦示出部分22A的厚度T3A及部分22B的厚度T3B。厚度T3A大於厚度T3B。根據本發明的一些實施例，差值（T3A - T3B）大於約0.1微米，且可處於約0.1微米與約0.5微米之間的範圍內。因此，在封裝300中，光-熱轉換塗佈材料（離型膜22）的各部分具有交替的厚度。部分22A可具有實質上均勻的寬度，且部分22B可具有實質上均勻的寬度，並且部分22A的寬度可大於部分22B的寬度。
部分22B（以及亦可能為部分22A）可在剖視圖中具有盤形形狀，其中部分22B（或部分22A）的中間部分較部分22B/部分22A的邊緣部分更為凹陷。此外，盤形形狀可為彎曲的。
圖19C說明圖17中的區84的放大視圖。如圖19C所示，包封材料48包括基材48A及位於基材48A中的填料顆粒48B。由於包封材料48包封於光-熱轉換塗佈材料（離型膜22）上（如圖6所示）且不對包封材料48的與光-熱轉換塗佈材料（離型膜22）接觸的部分執行平坦化，因此與光-熱轉換塗佈材料（離型膜22）接觸的球形顆粒48B具有圓形輪廓，其中圓形輪廓與光-熱轉換塗佈材料（離型膜22）接觸。此外，此介面處的球形顆粒48B並未被部分地移除，以使得其具有與基材48A的所示頂表面共面的平的表面。相比之下，包封材料48的與介電層50接觸的部分已在圖7所示步驟中得以平坦化。因此，與介電層50接觸的球形顆粒48B在平坦化期間被局部地切割，且因此將具有與介電層50接觸的實質上平的底表面（而非具有圓形輪廓的底表面）。
在以上所示示例性實施例中，根據本發明的一些實施例論述了一些示例性製程及特徵。亦可包括其他特徵及製程。舉例而言，可包括測試結構以有助於對三維（3D）封裝或三維積體電路（IC）裝置進行驗證測試。測試結構可包括例如在重佈線層中或在基底上形成的測試接墊，所述測試接墊使得能夠使用探針及/或探針卡等對三維封裝或三維積體電路進行測試。可對中間結構及最終結構執行驗證測試。另外，可結合測試方法來使用本文所揭露的結構及方法，所述測試方法包括對已知良好晶粒的中間驗證以提高良率並降低成本。
本發明的實施例具有一些有利特徵。在傳統製程中，在形成用於形成穿孔（金屬柱）的晶種層之前，在光-熱轉換塗佈材料（離型膜）的頂部上形成緩衝層（聚合物層）。此製程的製造成本因形成緩衝層而增加。若為降低製造成本而不形成緩衝層，則由於在載體拆除時移除光-熱轉換塗佈材料（離型膜）且由於執行電漿清潔步驟來移除殘餘的光-熱轉換塗佈材料（離型膜），因此不會留下光-熱轉換塗佈材料（離型膜）的殘餘物。此導致穿孔（金屬柱）及包封材料（模塑化合物）被暴露至焊料及底部填充膠，且不存在緩衝層來將焊料/底部填充膠與穿孔（金屬柱）/模塑化合物分離。因此，在焊料與底部填充膠之間的介面處因應力而發生分層。根據本發明的一些實施例，不形成緩衝層，以降低製造成本。另一方面，光-熱轉換塗佈材料（離型膜）的一部分留在最終結構中，並充當緩衝層。因此分層問題得以消除。
根據本發明的一些實施例，一種封裝結構的製造方法包括：在載體之上形成離型膜；在所述離型膜上形成金屬柱；將所述金屬柱包封於包封材料中；對所述包封材料執行平坦化，以暴露出所述金屬柱；在所述包封材料及所述金屬柱之上形成重佈線結構；分解所述離型膜的第一部分，以將所述離型膜的第二部分自所述載體分離；以及在所述離型膜中形成開口，以暴露出所述金屬柱。在實施例中，所述封裝結構的製造方法包括經由焊料區將封裝組件結合至所述金屬柱，其中所述焊料區延伸至所述離型膜內以接觸所述金屬柱。在實施例中，所述分解所述離型膜的所述第一部分是藉由在所述離型膜上投射雷射束來執行。在實施例中，所述離型膜包含聚合物基材及碳黑顆粒。在實施例中，所述封裝更包括：在所述離型膜中形成所述開口之後，蝕刻鈦層，並且所述鈦層是所述金屬柱的一部分，且在蝕刻所述鈦層之後留存所述離型膜。在實施例中，在所述分解之前，所述離型膜的所述第一部分將所述離型膜的所述第二部分自所述載體分離，且所述離型膜的所述第一部分在實體上接觸所述載體。在實施例中，所述離型膜的所述第一部分在所述分解之前具有第一厚度，且所述離型膜在所述分解之前具有第二厚度，且所述第一厚度對所述第二厚度的比率介於約30%與約50%之間的範圍內。
根據本發明的一些實施例，一種封裝結構的製造方法包括：在載體上塗佈光-熱轉換塗佈材料；形成與所述光-熱轉換塗佈材料接觸的金屬晶種層；在所述金屬晶種層之上形成圖案化光阻，使所述金屬晶種層的一部分經由所述圖案化光阻中的開口暴露出；在所述金屬晶種層之上鍍覆金屬柱；移除所述圖案化光阻；蝕刻所述金屬晶種層，以暴露出所述光-熱轉換塗佈材料；在所述塗佈材料上投射光，以分解所述光-熱轉換塗佈材料的第一部分，而所述光-熱轉換塗佈材料的第二部分則留存，其中所述光-熱轉換塗佈材料的所述第一部分接觸所述載體；剝離所述載體；以及形成穿透所述光-熱轉換塗佈材料的所述第二部分的焊料區。在實施例中，在所述載體被剝離之後，所述光-熱轉換塗佈材料的所述第二部分是毯覆層。在實施例中，所述封裝結構的製造方法更包括：在所述光-熱轉換塗佈材料的所述第二部分中形成開口，其中所述焊料區延伸至所述開口中。在實施例中，所述開口是藉由雷射鑽孔來形成。在實施例中，所述投射所述光包括將雷射束掃描過整個所述光-熱轉換塗佈材料。在實施例中，所述方法更包括：在所述載體被剝離之後，對所述光-熱轉換塗佈材料的所述第二部分執行平坦化。在實施例中，所述方法更包括：在所述載體被剝離之後且在形成所述焊料區之前，蝕刻所述金屬晶種層的剩餘部分的一部分。
根據本發明的一些實施例，一種封裝結構包括：包封材料；穿孔，穿透所述包封材料；光-熱轉換塗佈材料，接觸所述穿孔及所述包封材料；以及導電特徵，穿透所述光-熱轉換塗佈材料。在實施例中，所述光-熱轉換塗佈材料被配置成在光的加熱下分解。在實施例中，所述導電特徵包括焊料區。在實施例中，所述封裝更包括：裝置晶粒；以及晶粒貼合膜，將所述裝置晶粒黏合至所述光-熱轉換塗佈材料，其中所述裝置晶粒及所述晶粒貼合膜被所述包封材料包封。在實施例中，所述光-熱轉換塗佈材料包含聚合物及碳黑顆粒。在實施例中，所述光-熱轉換塗佈材料包括以交替的佈局配置的多個第一部分與多個第二部分，且所述多個第一部分薄於所述多個第二部分。
根據本發明的一些實施例，一種封裝結構的製造方法包括：在載體上塗佈光-熱轉換塗佈材料；將裝置晶粒及晶粒貼合膜放置於光-熱轉換塗佈材料上；將所述裝置晶粒及所述晶粒貼合膜包封於包封材料中；投射光，其中所述光穿透過載體而到達光-熱轉換塗佈材料，且其中在投射所述光之後，光-熱轉換塗佈材料的第一部分藉由所述光分解，而光-熱轉換塗佈材料的第二部分留存；以及自光-熱轉換塗佈材料的第二部分剝離載體。在實施例中，所述晶粒貼合膜與光-熱轉換塗佈材料直接接觸。在實施例中，所述投射所述光包括投射雷射束。在實施例中，掃描雷射束以覆蓋整個光-熱轉換塗佈材料。在實施例中，所述封裝結構的製造方法包括：在所述光-熱轉換塗佈材料的所述第二部分中形成開口。在實施例中，所述形成所述開口包括執行雷射鑽孔。
根據本發明的一些實施例，一種封裝結構包括：裝置晶粒；晶粒貼合膜；光-熱轉換塗佈材料，其中所述晶粒貼合膜位於所述裝置晶粒與所述光-熱轉換塗佈材料之間且與所述裝置晶粒及所述光-熱轉換塗佈材料接觸；焊料區，穿透過所述光-熱轉換塗佈材料；以及封裝組件，位於所述裝置晶粒之上並接合至所述焊料區。在實施例中，所述光-熱轉換塗佈材料包含聚合物及碳黑顆粒。
根據本發明的一些實施例，一種封裝結構包括：第一封裝，所述第一封裝包括模塑化合物、及位於所述模塑化合物之上並接觸所述模塑化合物的光-熱轉換塗佈材料、以及穿透過所述光-熱轉換塗佈材料的焊料區；第二封裝，位於所述第一封裝之上且藉由所述焊料區結合至所述第一封裝；以及底部填充膠，包圍並接觸所述焊料區，其中所述底部填充膠接觸所述光-熱轉換塗佈材料。在實施例中，所述光-熱轉換塗佈材料包括交替配置的第一條帶部分及第二條帶部分，其中所述第一條帶部分及所述第二條帶部分的頂表面具有盤形形狀。
以上概述了若干實施例的特徵，以使熟習此項技術者可更佳地理解本發明的各個態樣。熟習此項技術者應知，其可容易地使用本發明作為設計或修改其他製程及結構的基礎來施行與本文中所介紹的實施例相同的目的及/或達成與本文中所介紹的實施例相同的優點。熟習此項技術者亦應認識到，該些等效構造並不背離本發明的精神及範圍，而且他們可在不背離本發明的精神及範圍的條件下對其作出各種改變、代替、及變更。
19B-19B‧‧‧線
20‧‧‧載體
22‧‧‧離型膜
22A、22B‧‧‧部分
24‧‧‧金屬晶種層
24A‧‧‧鈦層
26‧‧‧光阻
28‧‧‧開口
32、42‧‧‧金屬柱
36‧‧‧裝置晶粒
38‧‧‧晶粒貼合膜
44、50、60、62、66‧‧‧介電層
48‧‧‧包封材料
48A‧‧‧基材
48B‧‧‧填料顆粒
52、72‧‧‧開口
54、58、64‧‧‧重佈線
54A‧‧‧介層窗
54B‧‧‧金屬跡線
68‧‧‧凸塊下金屬
70‧‧‧電性連接件
74‧‧‧膠帶
76‧‧‧框架
78‧‧‧光
80‧‧‧焊料區
84‧‧‧區
86‧‧‧封裝組件
88‧‧‧結合接墊
100、100’、200、300‧‧‧封裝
202、206‧‧‧裝置晶粒
204‧‧‧封裝基底
208‧‧‧底部填料
400‧‧‧製程流程
402、404、406、408、410、412、414、418、420、422、424‧‧‧步驟
T1‧‧‧總厚度
T2、T3、T3A、T3B‧‧‧厚度
結合附圖閱讀以下詳細說明，會最佳地理解本發明的各個態樣。應注意，根據本行業中的標準慣例，各種特徵並非按比例繪製。事實上，為論述清晰起見，可任意增大或減小各種特徵的尺寸。 圖1至圖18根據一些實施例繪示封裝的形成過程的各中間階段的剖視圖。 圖19A及圖19B分別根據一些實施例繪示封裝中的離型膜的一部分的俯視圖及剖面圖。 圖19C根據一些實施例繪示離型膜的一部分的放大視圖。 圖20根據一些實施例繪示形成封裝的製程流程圖。

Claims (20)

  1. 一種封裝結構的製造方法，包括： 在載體之上形成離型膜； 在所述離型膜上形成金屬柱； 將所述金屬柱包封於包封材料中； 對所述包封材料執行平坦化，以暴露出所述金屬柱； 在所述包封材料及所述金屬柱之上形成重佈線結構； 分解所述離型膜的第一部分，以將所述離型膜的第二部分自所述載體分離；以及 在所述離型膜中形成開口，以暴露出所述金屬柱。
  2. 如申請專利範圍第1項所述的封裝結構的製造方法，更包括經由焊料區將封裝組件結合至所述金屬柱，其中所述焊料區延伸至所述離型膜內以接觸所述金屬柱。
  3. 如申請專利範圍第1項所述的封裝結構的製造方法，其中所述分解所述離型膜的所述第一部分是藉由在所述離型膜上投射雷射束來執行。
  4. 如申請專利範圍第1項所述的封裝結構的製造方法，其中所述離型膜包含聚合物基材及碳黑顆粒。
  5. 如申請專利範圍第1項所述的封裝結構的製造方法，更包括：在所述離型膜中形成所述開口之後，蝕刻鈦層，所述鈦層是所述金屬柱的一部分，且在蝕刻所述鈦層之後留存所述離型膜。
  6. 如申請專利範圍第1項所述的封裝結構的製造方法，其中在所述分解之前，所述離型膜的所述第一部分將所述離型膜的所述第二部分自所述載體分離，且所述離型膜的所述第一部分在實體上接觸所述載體。
  7. 如申請專利範圍第1項所述的封裝結構的製造方法，其中所述離型膜的所述第一部分在所述分解之前具有第一厚度，且所述離型膜在所述分解之後具有第二厚度，且所述第二厚度對所述第一厚度的比率介於約50%與約70%之間的範圍內。
  8. 一種封裝結構的製造方法，包括： 在載體上塗佈光-熱轉換塗佈材料； 形成與所述光-熱轉換塗佈材料接觸的金屬晶種層； 在所述金屬晶種層之上形成圖案化光阻，使所述金屬晶種層的一部分經由所述圖案化光阻中的開口暴露出； 在所述金屬晶種層之上鍍覆金屬柱； 移除所述圖案化光阻； 蝕刻所述金屬晶種層，以暴露出所述光-熱轉換塗佈材料； 在所述塗佈材料上投射光，以分解所述光-熱轉換塗佈材料的第一部分，而所述光-熱轉換塗佈材料的第二部分則留存，其中所述光-熱轉換塗佈材料的所述第一部分接觸所述載體； 剝離所述載體；以及 形成穿透所述光-熱轉換塗佈材料的所述第二部分的焊料區。
  9. 如申請專利範圍第8項所述的封裝結構的製造方法，其中在所述載體被剝離之後，所述光-熱轉換塗佈材料的所述第二部分是毯覆層。
  10. 如申請專利範圍第8項所述的封裝結構的製造方法，更包括： 在所述光-熱轉換塗佈材料的所述第二部分中形成開口，其中所述焊料區延伸至所述開口中。
  11. 如申請專利範圍第10項所述的封裝結構的製造方法，其中所述開口是藉由雷射鑽孔形成。
  12. 如申請專利範圍第8項所述的封裝結構的製造方法，其中所述投射所述光包括將雷射束掃描過整個所述光-熱轉換塗佈材料。
  13. 如申請專利範圍第8項所述的封裝結構的製造方法，更包括：在所述載體被剝離之後，對所述光-熱轉換塗佈材料的所述第二部分執行平坦化。
  14. 如申請專利範圍第8項所述的封裝結構的製造方法，更包括：在所述載體被剝離之後且在形成所述焊料區之前，蝕刻所述金屬晶種層的剩餘部分的一部分。
  15. 一種封裝結構，包括： 包封材料； 穿孔，穿透所述包封材料； 光-熱轉換塗佈材料，接觸所述穿孔及所述包封材料；以及 導電特徵，穿透所述光-熱轉換塗佈材料。
  16. 如申請專利範圍第15項所述的封裝結構，其中所述光-熱轉換塗佈材料被配置成在光的加熱下分解。
  17. 如申請專利範圍第15項所述的封裝結構，其中所述導電特徵包括焊料區。
  18. 如申請專利範圍第15項所述的封裝結構，更包括： 裝置晶粒；以及 晶粒貼合膜，將所述裝置晶粒黏合至所述光-熱轉換塗佈材料，其中所述裝置晶粒及所述晶粒貼合膜被所述包封材料包封。
  19. 如申請專利範圍第15項所述的封裝結構，其中所述光-熱轉換塗佈材料包括聚合物及碳黑顆粒。
  20. 如申請專利範圍第15項所述的封裝結構，其中所述光-熱轉換塗佈材料包括以交替的佈局配置的多個第一部分與多個第二部分，且所述多個第一部分薄於所述多個第二部分。
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CN109216207B (zh) 2021-06-15
US20190096700A1 (en) 2019-03-28
KR20200133314A (ko) 2020-11-27
KR20190003294A (ko) 2019-01-09
CN109216207A (zh) 2019-01-15
US20190006199A1 (en) 2019-01-03
US10916450B2 (en) 2021-02-09
TWI673804B (zh) 2019-10-01
US10269589B2 (en) 2019-04-23
KR102218926B1 (ko) 2021-02-24

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