JP5714318B2 - ウエハマウント作製方法 - Google Patents
ウエハマウント作製方法 Download PDFInfo
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- JP5714318B2 JP5714318B2 JP2010288083A JP2010288083A JP5714318B2 JP 5714318 B2 JP5714318 B2 JP 5714318B2 JP 2010288083 A JP2010288083 A JP 2010288083A JP 2010288083 A JP2010288083 A JP 2010288083A JP 5714318 B2 JP5714318 B2 JP 5714318B2
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- adhesive
- semiconductor wafer
- wafer
- tape
- peeling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
- H01L2221/6839—Separation by peeling using peeling wedge or knife or bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
- H01L2221/68395—Separation by peeling using peeling wheel
Description
すなわち、支持用の粘着テープを介してリングフレームに半導体ウエハを支持するウエハマウント作製方法であって、
前記半導体ウエハの回路面に液状の接着剤を塗布する塗布過程と、
前記半導体ウエハの接着剤の塗布面に半導体ウエハと同形状以上の支持板を貼り合せる貼合せ過程と、
前記支持板を保持して半導体ウエハの裏面を研削する研削過程と、
支持用の前記粘着テープを介してリングフレームに半導体ウエハを支持する支持過程と、
前記半導体ウエハから支持板を分離する分離過程と、
前記半導体ウエハ上でフィルム状になっている接着剤に半導体ウエハの直径以上の幅を有する剥離テープを当該接着剤の全面に貼り付けて当該剥離テープを剥離することにより、当該接着剤を一体にして半導体ウエハから剥離する剥離過程を備え、
前記剥離過程では、個別の吸着台で半導体ウエハとリングフレームのそれぞれを吸着保持し、
前記半導体ウエハの表面がリングフレームの表面より突き出た状態で半導体ウエハ上の接着剤に剥離テープを貼り付ける
を備えたことを特徴とする。
前記分離過程では、ガラス製の支持板側から紫外線を照射し、接着剤を硬化させてから支持板を接着剤から分離することが好ましい。
前記半導体ウエハの回路面に液状の接着剤を塗布する塗布過程と、
前記半導体ウエハの接着剤の塗布面に半導体ウエハと同形状以上の支持板を貼り合わせる貼合せ過程と、
前記支持板を保持して半導体ウエハの裏面を研削する研削過程と、
支持用の前記粘着テープを介してリングフレームに半導体ウエハを支持する支持過程と、
前記半導体ウエハから支持板を分離する分離過程と、
前記半導体ウエハ上でフィルム状になっている接着剤に半導体ウエハと同形状以上に予め切断された粘着テープを貼り付ける貼付け過程と、
前記半導体ウエハの直径よりも幅の狭い剥離テープを粘着テープに貼り付けて当該剥離テープを剥離することにより、当該粘着テープと接着剤を一体にして半導体ウエハから剥離する剥離過程と、
を備えたことを特徴とします。
前記分離過程では、ガラス製の支持板側から紫外線を照射し、接着剤を硬化させてから支持板を接着剤から分離することが好ましい。
本実施例は、図1に示すように、接着剤塗布工程S1、支持板貼合せ工程S2、バックフラインド工程S3、支持工程S4、分離工程S5および剥離工程S6から構成されている。
本実施例は、図22に示すように、接着剤塗布工程S10、支持板貼合せ工程S20、バックフラインド工程S30、支持工程S40、分離工程S50、貼付け工程S60および剥離工程S70から構成されている。なお、接着剤塗布工程S10から支持板分離工程40までは、上記実施例1と同じ処理を行うので、異なる処理の貼付け工程S60以降について説明する。
4 … ノズル
6 … 接着剤
11 … 支持板
19 … 粘着テープ(支持用)
27 … チャックテーブル
28 … フレーム保持部
29 … 貼付ユニット
30 … 剥離ユニット
31 … 剥離テープ
32 … 貼付ローラ
f … リングフレーム
W … 半導体ウエハ
MF … ウエハマント
Claims (5)
- 支持用の粘着テープを介してリングフレームに半導体ウエハを支持するウエハマウント作製方法であって、
前記半導体ウエハの回路面に液状の接着剤を塗布する塗布過程と、
前記半導体ウエハの接着剤の塗布面に半導体ウエハと同形状以上の支持板を貼り合せる貼合せ過程と、
前記支持板を保持して半導体ウエハの裏面を研削する研削過程と、
支持用の前記粘着テープを介してリングフレームに半導体ウエハを支持する支持過程と、
前記半導体ウエハから支持板を分離する分離過程と、
前記半導体ウエハ上でフィルム状になっている接着剤に半導体ウエハの直径以上の幅を有する剥離テープを当該接着剤の全面に貼り付けて当該剥離テープを剥離することにより、当該接着剤を一体にして半導体ウエハから剥離する剥離過程を備え、
前記剥離過程では、個別の吸着台で半導体ウエハとリングフレームのそれぞれを吸着保持し、
前記半導体ウエハの表面がリングフレームの表面より突き出た状態で半導体ウエハ上の接着剤に剥離テープを貼り付ける
ことを特徴とするウエハマウント作製方法。 - 請求項1に記載のウエハマウント作製方法において、
前記剥離過程では、さらに、半導体ウエハの外周に離型処理されたプレートを近接させた状態で半導体ウエハ上の接着剤に剥離テープを貼り付ける
ことを特徴とするウエハマウント作製方法。 - 請求項1または請求項2に記載のウエハマウント作製方法において、
前記接着剤は、紫外線硬化型であり、
前記分離過程では、ガラス製の支持板側から紫外線を照射し、接着剤を硬化させてから支持板を接着剤から分離する
ことを特徴とするウエハマウント作製方法。 - 支持用の粘着テープを介してリングフレームに半導体ウエハを支持するウエハマウント作製方法であって、
前記半導体ウエハの回路面に液状の接着剤を塗布する塗布過程と、
前記半導体ウエハの接着剤の塗布面に半導体ウエハと同形状以上の支持板を貼り合わせる貼合せ過程と、
前記支持板を保持して半導体ウエハの裏面を研削する研削過程と、
支持用の前記粘着テープを介してリングフレームに半導体ウエハを支持する支持過程と、
前記半導体ウエハから支持板を分離する分離過程と、
前記半導体ウエハ上でフィルム状になっている接着剤に半導体ウエハと同形状以上に予め切断された粘着テープを貼り付ける貼付け過程と、
前記半導体ウエハの直径よりも幅の狭い剥離テープを粘着テープに貼り付けて当該剥離テープを剥離することにより、当該粘着テープと接着剤を一体にして半導体ウエハから剥離する剥離過程と、
を備えたことを特徴とするウエハマウント作製方法。 - 請求項4に記載のウエハマウント作製方法において、
前記接着剤は、紫外線硬化型であり、
前記分離過程では、ガラス製の支持板に紫外線を照射し、接着剤を硬化させてから支持板を接着剤から分離する
ことを特徴とするウエハマウント作製方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010288083A JP5714318B2 (ja) | 2010-12-24 | 2010-12-24 | ウエハマウント作製方法 |
CN201110332602.3A CN102543812B (zh) | 2010-12-24 | 2011-10-25 | 晶圆支架制作方法 |
US13/312,997 US20120160397A1 (en) | 2010-12-24 | 2011-12-07 | Mounted wafer manufacturing method |
TW100148182A TWI523091B (zh) | 2010-12-24 | 2011-12-23 | 晶圓黏片製作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010288083A JP5714318B2 (ja) | 2010-12-24 | 2010-12-24 | ウエハマウント作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012138402A JP2012138402A (ja) | 2012-07-19 |
JP5714318B2 true JP5714318B2 (ja) | 2015-05-07 |
Family
ID=46315258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010288083A Expired - Fee Related JP5714318B2 (ja) | 2010-12-24 | 2010-12-24 | ウエハマウント作製方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20120160397A1 (ja) |
JP (1) | JP5714318B2 (ja) |
CN (1) | CN102543812B (ja) |
TW (1) | TWI523091B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8834662B2 (en) | 2012-03-22 | 2014-09-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method of separating wafer from carrier |
TWI576190B (zh) * | 2013-08-01 | 2017-04-01 | Ibm | 使用中段波長紅外光輻射燒蝕之晶圓剝離 |
JP6814620B2 (ja) * | 2016-12-08 | 2021-01-20 | 株式会社ディスコ | 剥離装置 |
KR102434021B1 (ko) * | 2017-11-13 | 2022-08-24 | 삼성전자주식회사 | 캐리어 기판의 디본딩 방법, 이를 수행하기 위한 장치 및 이를 포함하는 반도체 칩의 싱귤레이팅 방법 |
JP7204389B2 (ja) * | 2018-09-18 | 2023-01-16 | 株式会社ディスコ | テープ貼着装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990028523A (ko) * | 1995-08-31 | 1999-04-15 | 야마모토 히데키 | 반도체웨이퍼의 보호점착테이프의 박리방법 및 그 장치 |
DE10256247A1 (de) * | 2002-11-29 | 2004-06-09 | Andreas Jakob | Schichtverbund aus einer Trennschicht und einer Schutzschicht zum Schutze und zum Handling eines Wafers beim Dünnen, bei der Rückseitenbeschichtung und beim Vereinzeln |
JP2004296839A (ja) * | 2003-03-27 | 2004-10-21 | Kansai Paint Co Ltd | 半導体チップの製造方法 |
JP4592270B2 (ja) * | 2003-10-06 | 2010-12-01 | 日東電工株式会社 | 半導体ウエハの支持材からの剥離方法およびこれを用いた装置 |
US7348216B2 (en) * | 2005-10-04 | 2008-03-25 | International Business Machines Corporation | Rework process for removing residual UV adhesive from C4 wafer surfaces |
US20080014532A1 (en) * | 2006-07-14 | 2008-01-17 | 3M Innovative Properties Company | Laminate body, and method for manufacturing thin substrate using the laminate body |
JP2008258303A (ja) * | 2007-04-03 | 2008-10-23 | Seiko Epson Corp | 半導体装置の製造方法 |
-
2010
- 2010-12-24 JP JP2010288083A patent/JP5714318B2/ja not_active Expired - Fee Related
-
2011
- 2011-10-25 CN CN201110332602.3A patent/CN102543812B/zh not_active Expired - Fee Related
- 2011-12-07 US US13/312,997 patent/US20120160397A1/en not_active Abandoned
- 2011-12-23 TW TW100148182A patent/TWI523091B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN102543812A (zh) | 2012-07-04 |
TW201234470A (en) | 2012-08-16 |
TWI523091B (zh) | 2016-02-21 |
US20120160397A1 (en) | 2012-06-28 |
JP2012138402A (ja) | 2012-07-19 |
CN102543812B (zh) | 2016-09-21 |
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