JP2012138402A - ウエハマウント作製方法 - Google Patents
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- H—ELECTRICITY
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
- H01L2221/6839—Separation by peeling using peeling wedge or knife or bar
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- H—ELECTRICITY
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
- H01L2221/68395—Separation by peeling using peeling wheel
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Abstract
【解決手段】半導体ウエハの回路面に液状の接着剤を塗布し、塗布面に支持板を貼り合わせ、当該支持板を保持して半導体ウエハの裏面を研削し、支持用の前記粘着テープを介してリングフレームに半導体ウエハを支持し、半導体ウエハから支持板を分離し、さらに半導体ウエハ上でフィルム状になっている接着剤に半導体ウエハの直径以上の幅を有する剥離テープを貼り付けて当該剥離テープを剥離することにより、当該接着剤を一体にして半導体ウエハから剥離する。
【選択図】図1
Description
すなわち、支持用の粘着テープを介してリングフレームに半導体ウエハを支持するウエハマウント作製方法であって、
前記半導体ウエハの回路面に液状の接着剤を塗布する塗布過程と、
前記半導体ウエハの接着剤の塗布面に半導体ウエハと同形状以上の支持板を貼り合せる貼合せ過程と、
前記支持板を保持して半導体ウエハの裏面を研削する研削過程と、
支持用の前記粘着テープを介してリングフレームに半導体ウエハを支持する支持過程と、
前記半導体ウエハから支持板を分離する分離過程と、
前記半導体ウエハ上でフィルム状になっている接着剤に半導体ウエハの直径以上の幅を有する剥離テープを貼り付けて当該剥離テープを剥離することにより、当該接着剤を一体にして半導体ウエハから剥離する剥離過程と、
を備えたことを特徴とする。
前記半導体ウエハの表面がリングフレームの表面より突き出た状態で半導体ウエハ上の接着剤に剥離テープを貼り付けることが好ましい。
前記分離過程では、ガラス製の支持板側から紫外線を照射し、接着剤を硬化させてから支持板を接着剤から分離することが好ましい。
前記半導体ウエハの回路面に液状の接着剤を塗布する塗布過程と、
前記半導体ウエハの接着剤の塗布面に半導体ウエハと同形状以上の支持板を貼り合わせる貼合せ過程と、
前記支持板を保持して半導体ウエハの裏面を研削する研削過程と、
支持用の前記粘着テープを介してリングフレームに半導体ウエハを支持する支持過程と、
前記半導体ウエハから支持板を分離する分離過程と、
前記半導体ウエハ上でフィルム状になっている接着剤に半導体ウエハと同形状以上に予め切断された粘着テープを貼り付ける貼付過程と、
前記粘着テープに剥離テープを貼り付けて当該剥離テープを剥離することにより、当該粘着テープと接着剤を一体にして半導体ウエハから剥離する剥離過程と、
を備えたことを特徴とする。
前記分離過程では、ガラス製の支持板側から紫外線を照射し、接着剤を硬化させてから支持板を接着剤から分離することが好ましい。
本実施例は、図1に示すように、接着剤塗布工程S1、支持板貼合せ工程S2、バックフラインド工程S3、支持工程S4、分離工程S5および剥離工程S6から構成されている。
本実施例は、図22に示すように、接着剤塗布工程S10、支持板貼合せ工程S20、バックフラインド工程S30、支持工程S40、分離工程S50、貼付け工程S60および剥離工程S70から構成されている。なお、接着剤塗布工程S10から支持板分離工程40までは、上記実施例1と同じ処理を行うので、異なる処理の貼付け工程S60以降について説明する。
4 … ノズル
6 … 接着剤
11 … 支持板
19 … 粘着テープ(支持用)
27 … チャックテーブル
28 … フレーム保持部
29 … 貼付ユニット
30 … 剥離ユニット
31 … 剥離テープ
32 … 貼付ローラ
f … リングフレーム
W … 半導体ウエハ
MF … ウエハマント
Claims (7)
- 支持用の粘着テープを介してリングフレームに半導体ウエハを支持するウエハマウント作製方法であって、
前記半導体ウエハの回路面に液状の接着剤を塗布する塗布過程と、
前記半導体ウエハの接着剤の塗布面に半導体ウエハと同形状以上の支持板を貼り合せる貼合せ過程と、
前記支持板を保持して半導体ウエハの裏面を研削する研削過程と、
支持用の前記粘着テープを介してリングフレームに半導体ウエハを支持する支持過程と、
前記半導体ウエハから支持板を分離する分離過程と、
前記半導体ウエハ上でフィルム状になっている接着剤に半導体ウエハの直径以上の幅を有する剥離テープを貼り付けて当該剥離テープを剥離することにより、当該接着剤を一体にして半導体ウエハから剥離する剥離過程と、
を備えたことを特徴とするウエハマウント作製方法。 - 請求項1に記載のウエハマウント作製方法において、
前記剥離過程では、個別の吸着台で半導体ウエハとリングフレームをそれぞれ吸着保持し、
前記半導体ウエハの表面がリングフレームの表面より突き出た状態で半導体ウエハ上の接着剤に剥離テープを貼り付ける
ことを特徴とするウエハマウント作製方法。 - 請求項2に記載のウエハマウント作製方法において、
前記剥離過程では、さらに、半導体ウエハの外周に離型処理されたプレートを近接させた状態で半導体ウエハ上の接着剤に剥離テープを貼り付ける
ことを特徴とするウエハマウント作製方法。 - 請求項1ないし請求項3のいずれかに記載のウエハマウント作製方法において、
前記接着剤は、紫外線硬化型であり、
前記分離過程では、ガラス製の支持板側から紫外線を照射し、接着剤を硬化させてから支持板を接着剤から分離する
ことを特徴とするウエハマウント作製方法。 - 支持用の粘着テープを介してリングフレームに半導体ウエハを支持するウエハマウント作製方法であって、
前記半導体ウエハの回路面に液状の接着剤を塗布する塗布過程と、
前記半導体ウエハの接着剤の塗布面に半導体ウエハと同形状以上の支持板を貼り合わせる貼合せ過程と、
前記支持板を保持して半導体ウエハの裏面を研削する研削過程と、
支持用の前記粘着テープを介してリングフレームに半導体ウエハを支持する支持過程と、
前記半導体ウエハから支持板を分離する分離過程と、
前記半導体ウエハ上でフィルム状になっている接着剤に半導体ウエハと同形状以上に予め切断された粘着テープを貼り付ける貼付け過程と、
前記粘着テープに剥離テープを貼り付けて当該剥離テープを剥離することにより、当該粘着テープと接着剤を一体にして半導体ウエハから剥離する剥離過程と、
を備えたことを特徴とするウエハマウント作製方法。 - 請求項5に記載のウエハマウント作製方法において、
前記剥離過程では、半導体ウエハの直径よりも幅の狭い剥離テープを貼り付ける
ことを特徴とするウエハマウント作製方法。 - 請求項5または請求項6に記載のウエハマウント作製方法において、
前記接着剤は、紫外線硬化型であり、
前記分離過程では、ガラス製の支持板に紫外線を照射し、接着剤を硬化させてから支持板を接着剤から分離する
ことを特徴とするウエハマウント作製方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010288083A JP5714318B2 (ja) | 2010-12-24 | 2010-12-24 | ウエハマウント作製方法 |
CN201110332602.3A CN102543812B (zh) | 2010-12-24 | 2011-10-25 | 晶圆支架制作方法 |
US13/312,997 US20120160397A1 (en) | 2010-12-24 | 2011-12-07 | Mounted wafer manufacturing method |
TW100148182A TWI523091B (zh) | 2010-12-24 | 2011-12-23 | 晶圓黏片製作方法 |
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Application Number | Priority Date | Filing Date | Title |
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JP2010288083A JP5714318B2 (ja) | 2010-12-24 | 2010-12-24 | ウエハマウント作製方法 |
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Publication Number | Publication Date |
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JP2012138402A true JP2012138402A (ja) | 2012-07-19 |
JP5714318B2 JP5714318B2 (ja) | 2015-05-07 |
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JP2010288083A Expired - Fee Related JP5714318B2 (ja) | 2010-12-24 | 2010-12-24 | ウエハマウント作製方法 |
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US (1) | US20120160397A1 (ja) |
JP (1) | JP5714318B2 (ja) |
CN (1) | CN102543812B (ja) |
TW (1) | TWI523091B (ja) |
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KR20180065918A (ko) * | 2016-12-08 | 2018-06-18 | 가부시기가이샤 디스코 | 박리 장치 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US8834662B2 (en) * | 2012-03-22 | 2014-09-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method of separating wafer from carrier |
TWI576190B (zh) * | 2013-08-01 | 2017-04-01 | Ibm | 使用中段波長紅外光輻射燒蝕之晶圓剝離 |
KR102434021B1 (ko) * | 2017-11-13 | 2022-08-24 | 삼성전자주식회사 | 캐리어 기판의 디본딩 방법, 이를 수행하기 위한 장치 및 이를 포함하는 반도체 칩의 싱귤레이팅 방법 |
JP7204389B2 (ja) * | 2018-09-18 | 2023-01-16 | 株式会社ディスコ | テープ貼着装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005116679A (ja) * | 2003-10-06 | 2005-04-28 | Nitto Denko Corp | 半導体ウエハの支持材からの剥離方法およびこれを用いた装置 |
JP2008258303A (ja) * | 2007-04-03 | 2008-10-23 | Seiko Epson Corp | 半導体装置の製造方法 |
JP2009543708A (ja) * | 2006-07-14 | 2009-12-10 | スリーエム イノベイティブ プロパティズ カンパニー | 層状体、及び前記層状体を用いた薄型基材の製造方法 |
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KR19990028523A (ko) * | 1995-08-31 | 1999-04-15 | 야마모토 히데키 | 반도체웨이퍼의 보호점착테이프의 박리방법 및 그 장치 |
DE10256247A1 (de) * | 2002-11-29 | 2004-06-09 | Andreas Jakob | Schichtverbund aus einer Trennschicht und einer Schutzschicht zum Schutze und zum Handling eines Wafers beim Dünnen, bei der Rückseitenbeschichtung und beim Vereinzeln |
JP2004296839A (ja) * | 2003-03-27 | 2004-10-21 | Kansai Paint Co Ltd | 半導体チップの製造方法 |
US7348216B2 (en) * | 2005-10-04 | 2008-03-25 | International Business Machines Corporation | Rework process for removing residual UV adhesive from C4 wafer surfaces |
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- 2011-12-07 US US13/312,997 patent/US20120160397A1/en not_active Abandoned
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Patent Citations (3)
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JP2005116679A (ja) * | 2003-10-06 | 2005-04-28 | Nitto Denko Corp | 半導体ウエハの支持材からの剥離方法およびこれを用いた装置 |
JP2009543708A (ja) * | 2006-07-14 | 2009-12-10 | スリーエム イノベイティブ プロパティズ カンパニー | 層状体、及び前記層状体を用いた薄型基材の製造方法 |
JP2008258303A (ja) * | 2007-04-03 | 2008-10-23 | Seiko Epson Corp | 半導体装置の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20180065918A (ko) * | 2016-12-08 | 2018-06-18 | 가부시기가이샤 디스코 | 박리 장치 |
KR102294331B1 (ko) | 2016-12-08 | 2021-08-25 | 가부시기가이샤 디스코 | 박리 장치 |
Also Published As
Publication number | Publication date |
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CN102543812A (zh) | 2012-07-04 |
US20120160397A1 (en) | 2012-06-28 |
CN102543812B (zh) | 2016-09-21 |
TW201234470A (en) | 2012-08-16 |
TWI523091B (zh) | 2016-02-21 |
JP5714318B2 (ja) | 2015-05-07 |
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