CN101443851B - 具有电平转换字线驱动器的存储器及其方法 - Google Patents

具有电平转换字线驱动器的存储器及其方法 Download PDF

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Publication number
CN101443851B
CN101443851B CN2007800176100A CN200780017610A CN101443851B CN 101443851 B CN101443851 B CN 101443851B CN 2007800176100 A CN2007800176100 A CN 2007800176100A CN 200780017610 A CN200780017610 A CN 200780017610A CN 101443851 B CN101443851 B CN 101443851B
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China
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voltage
word line
transistor
coupled
node
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Chinese (zh)
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CN101443851A (zh
Inventor
T·W·里斯顿
S·P·乔德休里-纳格尔
P·H·佩雷三世
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Vlsi Technology Co Ltd
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Freescale Semiconductor Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G11C5/144—Detection of predetermined disconnection or reduction of power supply, e.g. power down or power standby
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Logic Circuits (AREA)
CN2007800176100A 2006-05-15 2007-03-22 具有电平转换字线驱动器的存储器及其方法 Active CN101443851B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/433,998 2006-05-15
US11/433,998 US7440354B2 (en) 2006-05-15 2006-05-15 Memory with level shifting word line driver and method thereof
PCT/US2007/064583 WO2007133849A2 (en) 2006-05-15 2007-03-22 Memory with level shifting word line driver and method thereof

Publications (2)

Publication Number Publication Date
CN101443851A CN101443851A (zh) 2009-05-27
CN101443851B true CN101443851B (zh) 2012-06-13

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CN2007800176100A Active CN101443851B (zh) 2006-05-15 2007-03-22 具有电平转换字线驱动器的存储器及其方法

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Country Link
US (2) US7440354B2 (enExample)
JP (1) JP5081902B2 (enExample)
KR (1) KR20090017521A (enExample)
CN (1) CN101443851B (enExample)
TW (1) TWI462117B (enExample)
WO (1) WO2007133849A2 (enExample)

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JP2008010082A (ja) * 2006-06-29 2008-01-17 Nec Electronics Corp 不揮発性半導体記憶装置及びワード線駆動方法
US7876612B2 (en) * 2008-10-08 2011-01-25 Nanya Technology Corp. Method for reducing leakage current of a memory and related device
US7940580B2 (en) * 2008-12-19 2011-05-10 Advanced Micro Devices, Inc. Voltage shifting word-line driver and method therefor
US8358540B2 (en) * 2010-01-13 2013-01-22 Micron Technology, Inc. Access line dependent biasing schemes
CN102194517B (zh) * 2010-03-08 2015-05-20 上海华虹宏力半导体制造有限公司 具有输入电压转换单元的存储器
US9411391B2 (en) * 2014-02-07 2016-08-09 Apple Inc. Multistage low leakage address decoder using multiple power modes
KR102155611B1 (ko) * 2014-02-28 2020-09-14 에스케이하이닉스 주식회사 데이터 저장 장치
US9875783B2 (en) * 2014-03-03 2018-01-23 Intel Corporation High voltage tolerant word-line driver
US9922702B1 (en) * 2017-01-03 2018-03-20 Intel Corporation Apparatus for improving read stability
US9881669B1 (en) 2017-03-01 2018-01-30 Globalfoundries Inc. Wordline driver with integrated voltage level shift function
US10388355B1 (en) 2017-12-08 2019-08-20 Rambus Inc. Dual-domain memory
CN110277125B (zh) * 2019-06-28 2020-07-28 长江存储科技有限责任公司 一种存储单元阵列外围电路及存储器件
TWI723944B (zh) 2020-09-21 2021-04-01 崛智科技有限公司 記憶體裝置

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JP3082091B2 (ja) * 1990-07-25 2000-08-28 株式会社日立製作所 半導体集積回路
JP3705842B2 (ja) * 1994-08-04 2005-10-12 株式会社ルネサステクノロジ 半導体装置
JPH0973783A (ja) * 1995-09-07 1997-03-18 Fujitsu Ltd 半導体記憶装置
TW318932B (enExample) * 1995-12-28 1997-11-01 Hitachi Ltd
TW382164B (en) * 1996-04-08 2000-02-11 Hitachi Ltd Semiconductor IC device with tunnel current free MOS transistors for power supply intercept of main logic
JP4017248B2 (ja) * 1998-04-10 2007-12-05 株式会社日立製作所 半導体装置
US6009023A (en) * 1998-05-26 1999-12-28 Etron Technology, Inc. High performance DRAM structure employing multiple thickness gate oxide
JP2000036193A (ja) * 1998-07-17 2000-02-02 Hitachi Ltd 半導体集積回路装置
KR100283907B1 (ko) * 1998-12-09 2001-03-02 김영환 서브워드라인 구동회로를 구비한 반도체 메모리
JP3296319B2 (ja) * 1999-03-02 2002-06-24 日本電気株式会社 ワード線駆動回路及び半導体記憶装置
KR100311041B1 (ko) * 1999-05-07 2001-11-02 윤종용 대기 상태시 누설전류가 발생되지 않는 로우 디코더들 및 칼럼디코더들을 갖는 반도체 메모리장치
JP2001110184A (ja) * 1999-10-14 2001-04-20 Hitachi Ltd 半導体装置
JP3838892B2 (ja) * 2000-08-31 2006-10-25 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置およびそのリフレッシュ方法
JP2003092364A (ja) * 2001-05-21 2003-03-28 Mitsubishi Electric Corp 半導体記憶装置
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US20040104756A1 (en) * 2002-12-03 2004-06-03 Payne James E. Voltage level shifter circuit having high speed and low switching power
TWI221059B (en) * 2003-10-21 2004-09-11 Novatek Microelectronics Corp Voltage level shifter
US6925025B2 (en) * 2003-11-05 2005-08-02 Texas Instruments Incorporated SRAM device and a method of powering-down the same
US7242626B2 (en) * 2005-05-06 2007-07-10 Freescale Semiconductor, Inc. Method and apparatus for low voltage write in a static random access memory

Also Published As

Publication number Publication date
JP2009537933A (ja) 2009-10-29
CN101443851A (zh) 2009-05-27
US20070263474A1 (en) 2007-11-15
US7440354B2 (en) 2008-10-21
US7706207B2 (en) 2010-04-27
TW200807439A (en) 2008-02-01
TWI462117B (zh) 2014-11-21
WO2007133849A2 (en) 2007-11-22
WO2007133849A3 (en) 2008-04-10
KR20090017521A (ko) 2009-02-18
US20090021990A1 (en) 2009-01-22
JP5081902B2 (ja) 2012-11-28

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Effective date of registration: 20161008

Address after: Delaware

Patentee after: VLSI Technology Co., Ltd.

Address before: Texas in the United States

Patentee before: Fisical Semiconductor Inc.