TWI462117B - 具有位準偏移字元線驅動器之記憶體及其方法 - Google Patents

具有位準偏移字元線驅動器之記憶體及其方法 Download PDF

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Publication number
TWI462117B
TWI462117B TW096111642A TW96111642A TWI462117B TW I462117 B TWI462117 B TW I462117B TW 096111642 A TW096111642 A TW 096111642A TW 96111642 A TW96111642 A TW 96111642A TW I462117 B TWI462117 B TW I462117B
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TW
Taiwan
Prior art keywords
voltage
word line
line driver
bit
transistor
Prior art date
Application number
TW096111642A
Other languages
English (en)
Chinese (zh)
Other versions
TW200807439A (en
Inventor
Thomas W Liston
Shahnaz P Chowdhury-Nagle
Perry H Pelley
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=38684957&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI462117(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200807439A publication Critical patent/TW200807439A/zh
Application granted granted Critical
Publication of TWI462117B publication Critical patent/TWI462117B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G11C5/144—Detection of predetermined disconnection or reduction of power supply, e.g. power down or power standby
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Logic Circuits (AREA)
TW096111642A 2006-05-15 2007-04-02 具有位準偏移字元線驅動器之記憶體及其方法 TWI462117B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/433,998 US7440354B2 (en) 2006-05-15 2006-05-15 Memory with level shifting word line driver and method thereof

Publications (2)

Publication Number Publication Date
TW200807439A TW200807439A (en) 2008-02-01
TWI462117B true TWI462117B (zh) 2014-11-21

Family

ID=38684957

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096111642A TWI462117B (zh) 2006-05-15 2007-04-02 具有位準偏移字元線驅動器之記憶體及其方法

Country Status (6)

Country Link
US (2) US7440354B2 (enExample)
JP (1) JP5081902B2 (enExample)
KR (1) KR20090017521A (enExample)
CN (1) CN101443851B (enExample)
TW (1) TWI462117B (enExample)
WO (1) WO2007133849A2 (enExample)

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* Cited by examiner, † Cited by third party
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KR100644224B1 (ko) * 2005-12-06 2006-11-10 삼성전자주식회사 누설전류를 감소시키는 레벨 쉬프트 및 이를 포함하는불휘발성 반도체 메모리 장치의 블락 드라이버
JP2008010082A (ja) * 2006-06-29 2008-01-17 Nec Electronics Corp 不揮発性半導体記憶装置及びワード線駆動方法
US7876612B2 (en) * 2008-10-08 2011-01-25 Nanya Technology Corp. Method for reducing leakage current of a memory and related device
US7940580B2 (en) * 2008-12-19 2011-05-10 Advanced Micro Devices, Inc. Voltage shifting word-line driver and method therefor
US8358540B2 (en) * 2010-01-13 2013-01-22 Micron Technology, Inc. Access line dependent biasing schemes
CN102194517B (zh) * 2010-03-08 2015-05-20 上海华虹宏力半导体制造有限公司 具有输入电压转换单元的存储器
US9411391B2 (en) * 2014-02-07 2016-08-09 Apple Inc. Multistage low leakage address decoder using multiple power modes
KR102155611B1 (ko) * 2014-02-28 2020-09-14 에스케이하이닉스 주식회사 데이터 저장 장치
US9875783B2 (en) * 2014-03-03 2018-01-23 Intel Corporation High voltage tolerant word-line driver
US9922702B1 (en) * 2017-01-03 2018-03-20 Intel Corporation Apparatus for improving read stability
US9881669B1 (en) 2017-03-01 2018-01-30 Globalfoundries Inc. Wordline driver with integrated voltage level shift function
US10388355B1 (en) 2017-12-08 2019-08-20 Rambus Inc. Dual-domain memory
CN110277125B (zh) * 2019-06-28 2020-07-28 长江存储科技有限责任公司 一种存储单元阵列外围电路及存储器件
TWI723944B (zh) 2020-09-21 2021-04-01 崛智科技有限公司 記憶體裝置

Citations (10)

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US6195306B1 (en) * 1998-04-10 2001-02-27 Hitachi, Ltd. Semiconductor device
US6198685B1 (en) * 1999-03-02 2001-03-06 Nec Corporation Word-line driving circuit and semiconductor memory device
US20010001598A1 (en) * 1995-12-28 2001-05-24 Seiji Narui Dynamic random access memory (RAM), semiconductor storage device, and semiconductor integrated circuit (IC) device
US6269046B1 (en) * 1999-05-07 2001-07-31 Samsung Electronics Co., Ltd. Semiconductor memory device having improved decoders for decoding row and column address signals
US20020031032A1 (en) * 1994-08-04 2002-03-14 Tsukasa Ooishi Semiconductor memory device with a voltage down converter stably generating an internal down-converted voltage
US20030052371A1 (en) * 1996-04-08 2003-03-20 Hitachi, Ltd. Semiconductor integrated circuit device
US20030133330A1 (en) * 2002-01-16 2003-07-17 Pekny Theodore T. Circuit and method for reducing leakage current in a row driver circuit in a flash memory during a standby mode of operation
US20040104756A1 (en) * 2002-12-03 2004-06-03 Payne James E. Voltage level shifter circuit having high speed and low switching power
US20050018471A1 (en) * 2001-05-21 2005-01-27 Renesas Technology Corp. Semiconductor memory device
US6925025B2 (en) * 2003-11-05 2005-08-02 Texas Instruments Incorporated SRAM device and a method of powering-down the same

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JP3082091B2 (ja) * 1990-07-25 2000-08-28 株式会社日立製作所 半導体集積回路
JPH0973783A (ja) * 1995-09-07 1997-03-18 Fujitsu Ltd 半導体記憶装置
US6009023A (en) * 1998-05-26 1999-12-28 Etron Technology, Inc. High performance DRAM structure employing multiple thickness gate oxide
JP2000036193A (ja) * 1998-07-17 2000-02-02 Hitachi Ltd 半導体集積回路装置
KR100283907B1 (ko) * 1998-12-09 2001-03-02 김영환 서브워드라인 구동회로를 구비한 반도체 메모리
JP2001110184A (ja) * 1999-10-14 2001-04-20 Hitachi Ltd 半導体装置
JP3838892B2 (ja) * 2000-08-31 2006-10-25 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置およびそのリフレッシュ方法
US7205218B2 (en) * 2002-06-05 2007-04-17 Micron Technology, Inc. Method including forming gate dielectrics having multiple lanthanide oxide layers
TWI221059B (en) * 2003-10-21 2004-09-11 Novatek Microelectronics Corp Voltage level shifter
US7242626B2 (en) * 2005-05-06 2007-07-10 Freescale Semiconductor, Inc. Method and apparatus for low voltage write in a static random access memory

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020031032A1 (en) * 1994-08-04 2002-03-14 Tsukasa Ooishi Semiconductor memory device with a voltage down converter stably generating an internal down-converted voltage
US20010001598A1 (en) * 1995-12-28 2001-05-24 Seiji Narui Dynamic random access memory (RAM), semiconductor storage device, and semiconductor integrated circuit (IC) device
US20030052371A1 (en) * 1996-04-08 2003-03-20 Hitachi, Ltd. Semiconductor integrated circuit device
US6195306B1 (en) * 1998-04-10 2001-02-27 Hitachi, Ltd. Semiconductor device
US6198685B1 (en) * 1999-03-02 2001-03-06 Nec Corporation Word-line driving circuit and semiconductor memory device
US6269046B1 (en) * 1999-05-07 2001-07-31 Samsung Electronics Co., Ltd. Semiconductor memory device having improved decoders for decoding row and column address signals
US20050018471A1 (en) * 2001-05-21 2005-01-27 Renesas Technology Corp. Semiconductor memory device
US20030133330A1 (en) * 2002-01-16 2003-07-17 Pekny Theodore T. Circuit and method for reducing leakage current in a row driver circuit in a flash memory during a standby mode of operation
US20040104756A1 (en) * 2002-12-03 2004-06-03 Payne James E. Voltage level shifter circuit having high speed and low switching power
US6925025B2 (en) * 2003-11-05 2005-08-02 Texas Instruments Incorporated SRAM device and a method of powering-down the same

Also Published As

Publication number Publication date
JP2009537933A (ja) 2009-10-29
CN101443851A (zh) 2009-05-27
US20070263474A1 (en) 2007-11-15
CN101443851B (zh) 2012-06-13
US7440354B2 (en) 2008-10-21
US7706207B2 (en) 2010-04-27
TW200807439A (en) 2008-02-01
WO2007133849A2 (en) 2007-11-22
WO2007133849A3 (en) 2008-04-10
KR20090017521A (ko) 2009-02-18
US20090021990A1 (en) 2009-01-22
JP5081902B2 (ja) 2012-11-28

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