CN101432892B - 双极型互补金属氧化物半导体技术中形成集电极的方法 - Google Patents

双极型互补金属氧化物半导体技术中形成集电极的方法 Download PDF

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Publication number
CN101432892B
CN101432892B CN2005800316215A CN200580031621A CN101432892B CN 101432892 B CN101432892 B CN 101432892B CN 2005800316215 A CN2005800316215 A CN 2005800316215A CN 200580031621 A CN200580031621 A CN 200580031621A CN 101432892 B CN101432892 B CN 101432892B
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Prior art keywords
refractory metal
hetero
bipolar transistor
npn
suicide layer
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Expired - Fee Related
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CN2005800316215A
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Chinese (zh)
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CN101432892A (zh
Inventor
皮特·J.·盖斯
皮特·B.·格雷
阿尔文·J.·约瑟夫
刘奇志
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Elpis Technologies
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

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  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
CN2005800316215A 2004-09-21 2005-09-20 双极型互补金属氧化物半导体技术中形成集电极的方法 Expired - Fee Related CN101432892B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/711,479 2004-09-21
US10/711,479 US7002190B1 (en) 2004-09-21 2004-09-21 Method of collector formation in BiCMOS technology
PCT/US2005/033851 WO2006034355A2 (en) 2004-09-21 2005-09-20 METHOD OF COLLECTOR FORMATION IN BiCMOS TECHNOLOGY

Publications (2)

Publication Number Publication Date
CN101432892A CN101432892A (zh) 2009-05-13
CN101432892B true CN101432892B (zh) 2010-08-25

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CN2005800316215A Expired - Fee Related CN101432892B (zh) 2004-09-21 2005-09-20 双极型互补金属氧化物半导体技术中形成集电极的方法

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Country Link
US (2) US7002190B1 (enExample)
EP (1) EP1794806B1 (enExample)
JP (1) JP5090168B2 (enExample)
KR (1) KR100961738B1 (enExample)
CN (1) CN101432892B (enExample)
TW (1) TWI364795B (enExample)
WO (1) WO2006034355A2 (enExample)

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DE102005021932A1 (de) * 2005-05-12 2006-11-16 Atmel Germany Gmbh Verfahren zur Herstellung integrierter Schaltkreise
US8435873B2 (en) 2006-06-08 2013-05-07 Texas Instruments Incorporated Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
JP5029607B2 (ja) 2006-07-28 2012-09-19 株式会社島津製作所 Ｘ線診断装置
US7709338B2 (en) * 2006-12-21 2010-05-04 International Business Machines Corporation BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devices
US20090072355A1 (en) * 2007-09-17 2009-03-19 International Business Machines Corporation Dual shallow trench isolation structure
JP2009099815A (ja) * 2007-10-18 2009-05-07 Toshiba Corp 半導体装置の製造方法
US9059196B2 (en) 2013-11-04 2015-06-16 International Business Machines Corporation Bipolar junction transistors with self-aligned terminals
US9570564B2 (en) 2014-08-05 2017-02-14 Globalfoundries Inc. Self-aligned emitter-base bipolar junction transistor with reduced base resistance and base-collector capacitance
CN108110051B (zh) * 2017-12-19 2019-11-12 上海华力微电子有限公司 一种带沟槽结构的双极型晶体管及其制作方法
US11640975B2 (en) 2021-06-17 2023-05-02 Nxp Usa, Inc. Silicided collector structure

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US5319239A (en) * 1991-08-30 1994-06-07 International Business Machines Corporation Polysilicon-collector-on-insulator polysilicon-emitter bipolar
CN1223469A (zh) * 1997-12-30 1999-07-21 西门子公司 凹进的浅沟槽隔离结构氮化物衬垫及其制造方法

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JPS63278347A (ja) * 1987-05-11 1988-11-16 Toshiba Corp 半導体装置およびその製造方法
EP0306213A3 (en) * 1987-09-02 1990-05-30 AT&T Corp. Submicron bipolar transistor with edge contacts
JPH01146361A (ja) * 1987-12-02 1989-06-08 Fujitsu Ltd 半導体装置
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JPH04106932A (ja) * 1990-08-27 1992-04-08 Fujitsu Ltd バイポーラトランジスタの製造方法
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JPH11312687A (ja) * 1998-04-30 1999-11-09 Toshiba Corp 半導体装置およびその製造方法
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US4589193A (en) * 1984-06-29 1986-05-20 International Business Machines Corporation Metal silicide channel stoppers for integrated circuits and method for making the same
US5319239A (en) * 1991-08-30 1994-06-07 International Business Machines Corporation Polysilicon-collector-on-insulator polysilicon-emitter bipolar
CN1223469A (zh) * 1997-12-30 1999-07-21 西门子公司 凹进的浅沟槽隔离结构氮化物衬垫及其制造方法

Also Published As

Publication number Publication date
TW200614383A (en) 2006-05-01
CN101432892A (zh) 2009-05-13
WO2006034355A2 (en) 2006-03-30
WO2006034355A3 (en) 2009-04-16
EP1794806B1 (en) 2014-07-02
JP5090168B2 (ja) 2012-12-05
US20060124964A1 (en) 2006-06-15
EP1794806A4 (en) 2011-06-29
TWI364795B (en) 2012-05-21
EP1794806A2 (en) 2007-06-13
JP2008514018A (ja) 2008-05-01
US7491985B2 (en) 2009-02-17
KR100961738B1 (ko) 2010-06-10
KR20070053280A (ko) 2007-05-23
US7002190B1 (en) 2006-02-21

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Effective date of registration: 20210616

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Patentee before: International Business Machines Corp.

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Granted publication date: 20100825

Termination date: 20210920